公开(公告)号：US20070262262A1

公开(公告)日：2007-11-15

申请号：US11647924

申请日：2006-12-29

Applicant: Thomas Horsky ,  John Williams

Inventor： Thomas Horsky ,  John Williams

IPC: H01J3/14

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large faction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US20040188631A1

公开(公告)日：2004-09-30

申请号：US10825339

申请日：2004-04-15

Applicant: SemEquip, Inc.

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: H01J027/02 ,  H01J037/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hxnull; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hxnull; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US06664548B2

公开(公告)日：2003-12-16

申请号：US10209397

申请日：2002-07-31

Applicant: Victor M. Benveniste ,  William F. DiVergilio

Inventor： Victor M. Benveniste ,  William F. DiVergilio

IPC: H01J2706

CPC classification number: H01J37/08 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.

公开(公告)号：US06664547B2

公开(公告)日：2003-12-16

申请号：US10136047

申请日：2002-05-01

Applicant: Victor M. Benveniste

Inventor： Victor M. Benveniste

IPC: H01J2700

CPC classification number: H01J37/08 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed for ion implantation applications, having control apparatus for selectively adjusting a density profile associated with an elongated ion beam being extracted from a plasma confinement chamber. The control apparatus comprises a plurality of magnet pairs proximate an elongated extraction exit through which a ribbon beam is extracted from the ion source, with the magnet pairs individually comprising upper and lower electro-magnets disposed above and below the extraction exit opening to provide adjustable magnetic fields in a pre-extraction region so as to adjust the density profile of an extracted ribbon beam.

公开(公告)号：US20030205683A1

公开(公告)日：2003-11-06

申请号：US10210124

申请日：2002-07-31

Inventor： Victor M. Benveniste

IPC: H01J037/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: Ion implantation systems and beamlines therefor are disclosed, in which a ribbon beam of a relatively large aspect ratio is mass analyzed and collimated to provide a mass analyzed ribbon beam for use in implanting one or more workpieces. The beamline system comprises two similar magnets, where the first magnet mass analyzes the ribbon beam to provide an intermediate mass analyzed ion beam, and the second magnet collimates the intermediate beam to provide a uniform mass analyzed ribbon beam to an end station. The symmetrical system provides equidistant beam trajectories for ions across the elongated beam width so as to mitigate non-linearities in the beam transport through the system, such that the resultant mass analyzed beam is highly uniform.

Abstract translation: 公开了离子注入系统和其束线，其中质量分析和准直以提供质量分析的带状束，用于植入一个或多个工件。 束线系统包括两个类似的磁体，其中第一磁体质量分析带状束以提供中间质量分析离子束，并且第二磁体准直中间光束，以向终端站提供均匀质量分析的带状束。 对称系统为细长波束宽度上的离子提供等距离的波束轨迹，以便减轻通过系统的波束传输中的非线性，使得所得到的质量分析波束高度均匀。

公开(公告)号：WO2009155500A2

公开(公告)日：2009-12-23

申请号：PCT/US2009/047929

申请日：2009-06-19

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  DORAI, Rajesh ,  KURUNCZI, Peter, E. ,  PEREL, Alexander, S. ,  PLATOW, Wilhelm, P.

Inventor： DORAI, Rajesh ,  KURUNCZI, Peter, E. ,  PEREL, Alexander, S. ,  PLATOW, Wilhelm, P.

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

Abstract: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

Abstract translation: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段，用于移动一个或多个段。 通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

公开(公告)号：WO2004015735A2

公开(公告)日：2004-02-19

申请号：PCT/US2003/023686

申请日：2003-07-29

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： BENVENISTE, Victor ,  DIVERGILIO, William

IPC: H01J37/00

CPC classification number: H01J37/08 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.

Abstract translation: 公开了一种具有用于提供用于离子注入系统的带状离子束的细长狭缝的离子源。 源包括用于在圆柱形源壳体内等离子体的RF激发的同轴电感耦合天线，以及设置在壳体内的周向磁体，用于产生用于等离子体限制的方位多重的磁场。 还公开了一种用于壳体内部的衬垫，其在等离子体和外部壳体壁之间提供热障碍，以便减轻或减少等离子体限制室内的冷凝。

公开(公告)号：WO2003094194A1

公开(公告)日：2003-11-13

申请号：PCT/US2003/013307

申请日：2003-04-29

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： BENVENISTE, Victor

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed for ion implantation applications, having control apparatus for selectively adjusting a density profile associated with an elongated ion beam being extracted from a plasma confinement chamber. The control apparatus comprises a plurality of magnet pairs proximate an elongated extraction exit through which a ribbon beam is extracted from the ion source, with the magnet pairs individually comprising upper and lower electro-magnets disposed above and below the extraction exit opening to provide adjustable magnetic fields in a pre-extraction region so as to adjust the density profile of an extracted ribbon beam.

Abstract translation: 公开了用于离子注入应用的离子源，其具有用于选择性地调节与从等离子体限制室提取的细长离子束相关联的密度分布的控制装置。 控制装置包括靠近细长抽出出口的多个磁体对，带状束从离子源提取出来，磁体对分别包括设置在提取出口开口上方和下方的上部和下部电磁体，以提供可调磁 在预提取区域中的场，以调节提取的带状束的密度分布。

公开(公告)号：EP3208826B1

公开(公告)日：2018-04-11

申请号：EP16204969.6

申请日：2016-12-19

Applicant: Advantest Corporation

Inventor： HAMAGUCHI, Shinichi ,  TANAKA, Hitoshi ,  TOKUNO, Atsushi ,  KOJIMA, Shinichi ,  YAMADA, Akio

IPC: H01J37/317 ,  H01J37/10 ,  H01J37/04

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/065 ,  H01J37/09 ,  H01J37/10 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/06308 ,  H01J2237/0835 ,  H01J2237/31754

Abstract: The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen. The formation module (122) includes: a particle source (20) which emits the charged particle beams from an emission region (21) in which a width in a longitudinal direction is different from and a width in a lateral direction orthogonal to the longitudinal direction; an aperture array device (60) provided with openings (62) arranged in an illuminated region (61) in which a width in a longitudinal direction is different from a width in a lateral direction orthogonal to the longitudinal direction; illumination lenses (30, 50) provided between the particle source (20) and the aperture array device (60); and a beam cross-section deformation device (40) which is provided between the particle source (20) and the aperture array device (60), and deforms a cross-sectional shape of the charged particle beams into an anisotropic shape by an action of a magnetic field or an electric field.

公开(公告)号：EP2426693A3

公开(公告)日：2013-01-16

申请号：EP11009107.1

申请日：2000-12-13

Applicant: Semequip, Inc.

Inventor： Horsky, Thomas N. ,  Williams, John N.

IPC: H01J37/08 ,  H01J3/02 ,  H01J37/317 ,  C23C14/48 ,  H01J27/20 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: In an ion source (1) for use with an ion implant device comprising:
an ionization chamber (5) defined by a plurality of side walls defining an ionization volume (16), one (13) of said side walls including an ion extraction aperture (37) for enabling an ion beam to be extracted from said ionization chamber (16) along a predetermined axis defining an ion beam axis; and a gas source (2) in fluid communication with said ionization chamber (16); an electron source (12) for producing an electron beam for ionizing the gas in said ionization chamber (16); said electron source (12) has an emitter (33) external to the ionization volume (16) and one (13) of said sidewalls (13) includes an electron entrance aperture , said emitter (33) configured relative to said aperture to cause an electron beam (32) to be directed across the ionization chamber (16) and ionize said gas by direct electron impact ionization by energetic electrons