公开(公告)号：EP2530786A4

公开(公告)日：2013-07-10

申请号：EP11736877

申请日：2011-01-18

Applicant: SUMITOMO BAKELITE CO

Inventor： KAGIMOTO TOMOHIRO ,  CHUMA TOSHIAKI

IPC: H01R11/01 ,  B32B15/08 ,  C09D7/12 ,  C09D201/00 ,  H01B1/22 ,  H01B5/16 ,  H01L21/60 ,  H01R4/02 ,  H01R43/02 ,  H05K3/32

CPC classification number: H01L24/29 ,  B32B15/08 ,  B32B2311/14 ,  B32B2311/16 ,  C09D5/24 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/11436 ,  H01L2224/11522 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29012 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29311 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83222 ,  H01L2224/83224 ,  H01L2224/83815 ,  H01L2224/83886 ,  H01L2224/9201 ,  H01L2224/9211 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1579 ,  H01L2924/3025 ,  H05K3/3436 ,  H05K3/3478 ,  H05K3/3489 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199

Abstract: A conductive connecting sheet (1) of the present invention is composed of a layered body including resin composition layers (11, 13) and a metal layer (12), and each resin composition layer (11, 13) satisfies the following requirement A: in the case where at least a part of metal ball(s) made of the metal material having low melting point is provided within each resin composition layer (11, 13), the metal ball(s) is heated at a temperature which is a melting temperature thereof or higher according to "test methods for soldering resin type fluxes" defined in JIS Z 3197, and then a wet extension of the metal ball (s) is measured, the wet extension is 37% or more. If the conductive connecting sheet is used for forming connection portions electrically connecting terminals to each other, the connection portions can be formed by selectively aggregating a heated and melted metal material between the terminals and a sealing layer constituted from a resin component can be formed so as to surround the connection portions. As a result, since peripheries of the connection portions can be covered by the resin component, the connection portions are fixed. Further, since an insulating property between the adjacent terminals can be secured by the sealing layer, generation of a leak current between the adjacent terminals can be reliably prevented.

公开(公告)号：EP2482311A2

公开(公告)日：2012-08-01

申请号：EP12150102.7

申请日：2012-01-03

Applicant: Fujitsu Limited

Inventor： Akamatsu, Toshiya

IPC: H01L23/498 ,  H01L21/98 ,  H01L25/065 ,  H01L23/14 ,  H01L23/48 ,  H01L21/60

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/50 ,  H01L29/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/11002 ,  H01L2224/1147 ,  H01L2224/13006 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16141 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/1624 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/81136 ,  H01L2224/8114 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81986 ,  H01L2224/83102 ,  H01L2224/9201 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06575 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15159 ,  H01L2924/15321 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/351 ,  H05K1/18 ,  H05K1/181 ,  H05K2201/09063 ,  H05K2201/1053 ,  H05K2201/10545 ,  H05K2201/10674 ,  H01L2224/13099 ,  H01L2224/11 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/48624 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a semiconductor element (2) and an electronic element (3). The semiconductor element has a first protruding electrode (2a), and the electronic element has a second protruding electrode (3a). A substrate (4) is disposed between the semiconductor element (2) and the electronic element (3). The substrate has a through-hole (4a) in which the first and second protruding electrodes (2a, 3a) are fitted. The first and second protruding electrodes are connected together inside the through-hole (4a) of the substrate.

Abstract translation: 一种半导体器件，包括：半导体元件（2）和电子元件（3）。 该半导体元件具有第一突出电极（2a）中，所述电子元件具有第二突出电极（3a）的。 A底（4）的半导体元件（2）和（3）电子元件之间设置。 基板具有其中第一和第二突出电极（2A，3A）嵌合的通孔（4a）中。 第一和第二突出电极连接在一起的内部通孔（4a）的基板。

公开(公告)号：EP2047500A1

公开(公告)日：2009-04-15

申请号：EP07853503.6

申请日：2007-07-24

Applicant: International Business Machines Corporation

Inventor： POGGE, H., Bernhard ,  YU, Roy, R.

IPC: H01L21/00

CPC classification number: H01L24/90 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/28 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/83194 ,  H01L2224/838 ,  H01L2224/9201 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of fabricating a through via connection useful in providing a vertical wafer- to-wafer interconnect structure is provided as well as the vertical interconnect structure that is formed by this method. The method of the present invention using only a metal stud for the vertical connection therefore no alpha radiation is generated by the metal stud. The method of the present invention includes an inserting step, a heating step, a thinning step and backside processing.

公开(公告)号：JP5638588B2

公开(公告)日：2014-12-10

申请号：JP2012252830

申请日：2012-11-19

Applicant: パナソニック株式会社

Inventor： 享 澤田 ,  享 澤田 ,  中谷　誠一 ,  誠一 中谷 ,  靖治 辛島 ,  靖治 辛島 ,  孝史 北江 ,  孝史 北江

IPC: H01L21/60 ,  H01L23/12 ,  H05K3/32 ,  H05K3/36

CPC classification number: H05K3/3436 ,  H01L23/3121 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/06515 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/11015 ,  H01L2224/11522 ,  H01L2224/13099 ,  H01L2224/14515 ,  H01L2224/1601 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/8314 ,  H01L2224/83855 ,  H01L2224/83886 ,  H01L2224/83951 ,  H01L2224/9201 ,  H01L2224/9212 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H05K3/323 ,  H05K2201/09909 ,  H05K2201/10977 ,  H05K2203/083 ,  H05K2203/087 ,  H05K2203/1147 ,  H05K2203/1178 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00012

公开(公告)号：JP4402718B2

公开(公告)日：2010-01-20

申请号：JP2007516252

申请日：2006-05-09

Applicant: パナソニック株式会社

Inventor： 貴志 一柳 ,  誠一 中谷 ,  孝史 北江 ,  嘉久 山下 ,  浩一 平野 ,  司 白石 ,  靖治 辛島

IPC: H01L21/60

CPC classification number: H01L21/563 ,  H01L23/552 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/13099 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/83007 ,  H01L2224/83051 ,  H01L2224/83101 ,  H01L2224/83136 ,  H01L2224/83139 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/83888 ,  H01L2224/9201 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/3025 ,  H05K3/303 ,  H05K3/323 ,  H05K3/3436 ,  H05K3/3484 ,  H05K2201/10568 ,  H05K2201/10977 ,  H05K2201/2036 ,  H05K2203/083 ,  H05K2203/087 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2224/13111

公开(公告)号：KR1020140079391A

公开(公告)日：2014-06-26

申请号：KR1020147008801

申请日：2012-09-25

Applicant: 알파 어쎔블리 솔루션 인크.

Inventor： 코엡폴제이. ,  미히엘데몬히 ,  토메이엘렌에스.

IPC: H05K3/34

CPC classification number: H05K13/0465 ,  H01L24/11 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/16113 ,  H01L2224/1624 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/9201 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/2076 ,  H05K1/092 ,  H05K1/111 ,  H05K3/3421 ,  H05K3/3478 ,  H05K3/3484 ,  H05K2201/10689 ,  H05K2201/10969 ,  H05K2203/0405 ,  Y02P70/613

Abstract: 방법 및 조립체는 솔더 조인트에서 공극을 감소시키는 솔더 프리폼을 사용하는 것을 수반한다. 하나 이상의 프리폼은 공극 형성을 감소시키기 위해 솔더 조인트에서 솔더 페이스트의 적어도 일부를 대체할 수 있다.

公开(公告)号：KR101622438B1

公开(公告)日：2016-05-18

申请号：KR1020127022345

申请日：2011-01-18

Applicant: 스미또모 베이크라이트 가부시키가이샤

Inventor： 가기모토도모히로 ,  쥬마도시아키

IPC: H01B1/22 ,  H01B5/16 ,  H01R11/01 ,  H01L21/60

CPC classification number: H01L24/29 ,  B32B15/08 ,  B32B2311/14 ,  B32B2311/16 ,  C09D5/24 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/11436 ,  H01L2224/11522 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29012 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29311 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83222 ,  H01L2224/83224 ,  H01L2224/83815 ,  H01L2224/83886 ,  H01L2224/9201 ,  H01L2224/9211 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1579 ,  H01L2924/3025 ,  H05K3/3436 ,  H05K3/3478 ,  H05K3/3489 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199

Abstract: 본발명의도전접속시트 (1) 는, 수지조성물층 (11, 13) 과금속층 (12) 을구비하는적층체에의해구성되는것으로, 수지조성물층 (11, 13) 은하기요건 A 를만족시키는것이다. 이러한구성의도전접속시트 (1) 를이용하여, 단자끼리간을전기적으로접속하는접속부의형성에적용하면, 가열용융된금속재료를선택적으로단자끼리간에응집시켜접속부를형성하고, 그주위에수지성분에의해구성되는봉지층을형성할수 있다. 그결과, 접속부의주위를수지성분으로피복할수 있기때문에접속부가고정된다. 또, 봉지층에의해인접하는단자간의절연성이확보되므로, 인접하는단자끼리간에리크전류가발생하는것을확실하게방지할수 있다. 요건 A : 수지조성물층 (11, 13) 중에저융점의금속재료로구성되는금속볼의적어도일부를배치한상태로, JIS Z 3197 에규정된납땜용수지계플럭스시험방법에준거하여, 상기금속볼의용융온도이상으로가열하고, 그후, 상기금속볼의젖음확산율을측정했을때, 그젖음확산율이 37 % 이상이된다.

公开(公告)号：US20230361073A1

公开(公告)日：2023-11-09

申请号：US17739415

申请日：2022-05-09

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： WU-DER YANG

IPC: H01L23/00 ,  H01L23/13 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L24/06 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/3128 ,  H01L21/563 ,  H01L2224/73215 ,  H01L2224/92147 ,  H01L2224/9201 ,  H01L2224/9202 ,  H01L2224/92165 ,  H01L2224/3224 ,  H01L2224/33055 ,  H01L2224/3303 ,  H01L24/29 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29386 ,  H01L2224/06166 ,  H01L2224/4813 ,  H01L2224/4824 ,  H01L2224/4846 ,  H01L2224/48464 ,  H01L2224/48101 ,  H01L2224/48106 ,  H01L2224/48091 ,  H01L2224/49097 ,  H01L2224/49052 ,  H01L2224/4911 ,  H01L2224/49175 ,  H01L2924/15151 ,  H01L2924/15165 ,  H01L2924/15311

Abstract: A method of manufacturing a WBGA package includes providing a carrier having a first surface and a second surface opposite to the first surface of the carrier, wherein the carrier has a through hole extending between the first surface and the second surface of the carrier; disposing an electronic component on the second surface of the carrier, wherein the electronic component includes a first bonding pad and a second bonding pad; and electrically connecting the first bonding pad and the second bonding pad through a first bonding wire.

公开(公告)号：US20160358886A1

公开(公告)日：2016-12-08

申请号：US15171364

申请日：2016-06-02

Applicant: Infineon Technologies AG

Inventor： Georg Meyer-Berg ,  Edward Fuergut ,  Joachim Mahler

IPC: H01L25/065 ,  H01L25/00

CPC classification number: H01L23/44 ,  H01L23/13 ,  H01L23/5385 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/38 ,  H01L24/40 ,  H01L24/41 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/071 ,  H01L2224/291 ,  H01L2224/32227 ,  H01L2224/3701 ,  H01L2224/37147 ,  H01L2224/40227 ,  H01L2224/40228 ,  H01L2224/40499 ,  H01L2224/41051 ,  H01L2224/4118 ,  H01L2224/831 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/848 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2224/9201 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/15151 ,  H01L2924/15153 ,  H05K7/023 ,  H05K7/08 ,  H05K7/10 ,  H05K7/20 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83

Abstract: A semiconductor power arrangement includes a chip carrier having a first surface and a second surface opposite the first surface. The semiconductor power arrangement further includes a plurality of power semiconductor chips attached to the chip carrier, wherein the power semiconductor chips are inclined to the first and/or second surface of the chip carrier.

Abstract translation: 半导体功率装置包括具有第一表面和与第一表面相对的第二表面的芯片载体。 半导体功率布置还包括附接到芯片载体的多个功率半导体芯片，其中功率半导体芯片倾斜于芯片载体的第一和/或第二表面。

公开(公告)号：US20160329290A1

公开(公告)日：2016-11-10

申请号：US15212603

申请日：2016-07-18

Applicant: Invensas Corporation

Inventor： Belgacem Haba ,  Charles G. Woychik ,  Cyprian Emeka Uzoh ,  Michael Newman ,  Terrence Caskey

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L21/563 ,  H01L23/564 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/10145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11903 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/1319 ,  H01L2224/14517 ,  H01L2224/1601 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16104 ,  H01L2224/16105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2224/81007 ,  H01L2224/811 ,  H01L2224/81139 ,  H01L2224/8192 ,  H01L2224/83104 ,  H01L2224/9201 ,  H01L2224/9212 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H05K1/181 ,  H05K3/30 ,  Y10T29/4913 ,  H01L2924/00012 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2224/05552

Abstract: Microelectronic assemblies and methods for making the same are disclosed herein. In one embodiment, a method of forming a microelectronic assembly comprises assembling first and second components to have first major surfaces of the first and second components facing one another and spaced apart from one another by a predetermined spacing, the first component having first and second oppositely-facing major surfaces, a first thickness extending in a first direction between the first and second major surfaces, and a plurality of first metal connection elements at the first major surface, the second component having a plurality of second metal connection elements at the first major surface of the second component; and plating a plurality of metal connector regions each connecting and extending continuously between a respective first connection element and a corresponding second connection element opposite the respective first connection element in the first direction.

Abstract translation: 本文公开了微电子组件及其制造方法。 在一个实施例中，形成微电子组件的方法包括组装第一和第二部件以使第一和第二部件的第一主表面彼此面对并且彼此隔开预定间隔，第一部件具有第一和第二相对 主表面，在第一和第二主表面之间沿第一方向延伸的第一厚度和在第一主表面处的多个第一金属连接元件，第二部件在第一主要部分具有多个第二金属连接元件 第二部件的表面; 以及电镀多个金属连接器区域，每个金属连接器区域在第一方向上在相应的第一连接元件和与相应的第一连接元件相对的相应的第二连接元件之间连续延伸。