Abstract:
탄소나노튜브 및 특정 공액 폴리머로 이루어진 탄소나노튜브 복합체 및 이로부터 제조된 탄소나노튜브 복합체 박막이 제공된다. 상기 탄소나노튜브 복합체는 액정성을 나타내며 러빙 처리를 통한 박막 형성으로 정렬성을 나타내어 향후 CNT TFT 제작에 사용될 수 있다.
Abstract:
전계방출형 백라이트 유닛의 애노드 패널이 개시된다. 개시된 애노드 패널은 기판; 이 기판의 하면에 형성되는 애노드 전극; 이 애노드 전극의 하면에 도포되는 형광체층; 및 기판의 상면에 마련되는 것으로, 렌즈 형상의 굴곡부들을 가지는 투명 커버 및 상기 굴곡부들 내에 채워지는 투명 액체를 포함하는 액체 팩(liquid pack);를 구비한다.
Abstract:
A method for selectively etching a thin film deposited on a vertical structure is provided to form desired various patterns by selectively etching a thin film deposited on a vertical structure by a simple process. A vertical structure(20) is formed on a substrate(10) by using a first material. A thin film is deposited on the outer surface of the vertical structure by using a second material. A resist material is deposited on the substrate so that the lateral lower part of the thin film is covered with the resist material and the upright upper part and the lateral upper part of the thin film are exposed. The upright upper part and the lateral upper part of the thin film are wet-etched to expose the upper region of the vertical structure surrounded by the upright upper part and the lateral upper part of the thin film. The resist material is removed. The vertical structure can be made of one of a nano wire, a post or a cylinder.
Abstract:
A method for manufacturing a field emission device is provided to improve the uniformity of luminance by accurately forming an emitter at a center portion of an emitter hole. A cathode electrode(112), an insulation layer(114) and a gate material layer are formed on a substrate(110), and then a metal sacrificial layer is formed on the gate material layer. A through-hole is formed in the metal sacrificial layer and the gate material layer to expose the insulation layer. An emitter hole(130) is formed in the exposed insulation layer to expose the cathode electrode, and then the gate material layer is etched to form a gate electrode(115). An emitter(150) made of carbon nano-tubes is formed on the cathode electrode.
Abstract:
Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
Abstract:
PURPOSE: A method for fabricating an LCD panel with a polymer/LC complex film is provided to improve screen quality such as contrast by carrying out curing steps for preventing the generation of non-cured parts. CONSTITUTION: A method for fabricating an LCD panel with a polymer/LC complex film includes the steps of preparing a first substrate(1) having positive circuit parts(2) and pixel electrodes(3) and a second substrate(4) having common electrodes(6). A panel is prepared with blank cells(7) by interposing spacers between the substrates. In the blank cells, a composition for forming polymer/LC complex film(8) is injected, wherein the composition contains LC monomers, UV-curing monomers, oligomers, a polymerization initiator, and dichroic dye. A mask is mounted on the second substrate and a first curing step is carried out by radiating light via the mask. After removing the mask, black matrix is formed on the second substrate. A second curing step is carried out by radiating light via the black matrix serving as a mask.