수직 구조물 상에 증착된 박막의 선택적 식각방법 및동방법을 이용한 메모리 소자의 제조방법
    53.
    发明授权
    수직 구조물 상에 증착된 박막의 선택적 식각방법 및동방법을 이용한 메모리 소자의 제조방법 失效
    选择性蚀刻形成垂直结构的薄膜的方法和使用该方法制造存储器件的方法

    公开(公告)号:KR100846514B1

    公开(公告)日:2008-07-17

    申请号:KR1020070011793

    申请日:2007-02-05

    Abstract: A method for selectively etching a thin film deposited on a vertical structure is provided to form desired various patterns by selectively etching a thin film deposited on a vertical structure by a simple process. A vertical structure(20) is formed on a substrate(10) by using a first material. A thin film is deposited on the outer surface of the vertical structure by using a second material. A resist material is deposited on the substrate so that the lateral lower part of the thin film is covered with the resist material and the upright upper part and the lateral upper part of the thin film are exposed. The upright upper part and the lateral upper part of the thin film are wet-etched to expose the upper region of the vertical structure surrounded by the upright upper part and the lateral upper part of the thin film. The resist material is removed. The vertical structure can be made of one of a nano wire, a post or a cylinder.

    Abstract translation: 提供了选择性蚀刻沉积在垂直结构上的薄膜的方法,以通过简单的工艺选择性地蚀刻沉积在垂直结构上的薄膜来形成所需的各种图案。 通过使用第一材料在基板(10)上形成垂直结构(20)。 通过使用第二材料将薄膜沉积在垂直结构的外表面上。 抗蚀剂材料沉积在基板上,使得薄膜的侧下部被抗蚀剂材料覆盖,并且薄膜的直立上部和外侧上部露出。 湿法蚀刻薄膜的直立上部和横向上部,以暴露由薄膜的直立上部和外侧上部包围的垂直结构的上部区域。 去除抗蚀剂材料。 垂直结构可以由纳米线,柱或圆筒之一制成。

    전계방출소자의 제조방법
    54.
    发明授权
    전계방출소자의 제조방법 失效
    制造场致发射装置的方法

    公开(公告)号:KR100785028B1

    公开(公告)日:2007-12-12

    申请号:KR1020060108836

    申请日:2006-11-06

    Abstract: A method for manufacturing a field emission device is provided to improve the uniformity of luminance by accurately forming an emitter at a center portion of an emitter hole. A cathode electrode(112), an insulation layer(114) and a gate material layer are formed on a substrate(110), and then a metal sacrificial layer is formed on the gate material layer. A through-hole is formed in the metal sacrificial layer and the gate material layer to expose the insulation layer. An emitter hole(130) is formed in the exposed insulation layer to expose the cathode electrode, and then the gate material layer is etched to form a gate electrode(115). An emitter(150) made of carbon nano-tubes is formed on the cathode electrode.

    Abstract translation: 提供一种用于制造场发射器件的方法,以通过在发射极孔的中心部分处精确地形成发射极来提高亮度的均匀性。 在基板(110)上形成阴极电极(112),绝缘层(114)和栅极材料层,然后在栅极材料层上形成金属牺牲层。 在金属牺牲层和栅极材料层中形成通孔以露出绝缘层。 在暴露的绝缘层中形成一个发射极孔,露出阴极电极,然后对栅极材料层进行蚀刻以形成一个栅电极(115)。 由碳纳米管制成的发射极(150)形成在阴极上。

    발광 다이오드용 양자점 형광체 및 그의 제조방법
    55.
    发明公开
    발광 다이오드용 양자점 형광체 및 그의 제조방법 有权
    用于发光二极管的量子点磷光体及其制备方法

    公开(公告)号:KR1020060084668A

    公开(公告)日:2006-07-25

    申请号:KR1020050005445

    申请日:2005-01-20

    Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

    Abstract translation: 本文公开了一种用于发光二极管的量子点荧光体,其包括量子点和支撑量子点的固体基板。 另外,提供了制备量子点荧光体的方法。 由于本发明的量子点荧光体由支撑在固体基板上的量子点组成,所以当分配通过将量子点与用于封装发光二极管的糊状树脂所获得的糊剂分配时,量子点不会聚集 。 由此,可以制造能够保持发光效率优异的发光二极管。

    고분자/액정 복합막을 갖는 액정표시소자 패널의 제조방법
    56.
    发明授权
    고분자/액정 복합막을 갖는 액정표시소자 패널의 제조방법 失效
    用于改进对比度的聚合物/ LC复合膜制造LCD面板的方法

    公开(公告)号:KR100429827B1

    公开(公告)日:2004-07-16

    申请号:KR1019970004758

    申请日:1997-02-17

    Inventor: 진용완

    Abstract: PURPOSE: A method for fabricating an LCD panel with a polymer/LC complex film is provided to improve screen quality such as contrast by carrying out curing steps for preventing the generation of non-cured parts. CONSTITUTION: A method for fabricating an LCD panel with a polymer/LC complex film includes the steps of preparing a first substrate(1) having positive circuit parts(2) and pixel electrodes(3) and a second substrate(4) having common electrodes(6). A panel is prepared with blank cells(7) by interposing spacers between the substrates. In the blank cells, a composition for forming polymer/LC complex film(8) is injected, wherein the composition contains LC monomers, UV-curing monomers, oligomers, a polymerization initiator, and dichroic dye. A mask is mounted on the second substrate and a first curing step is carried out by radiating light via the mask. After removing the mask, black matrix is formed on the second substrate. A second curing step is carried out by radiating light via the black matrix serving as a mask.

    Abstract translation: 目的:提供一种用于制造具有聚合物/ LC复合膜的LCD面板的方法,以通过执行用于防止产生未固化部件的固化步骤来改善诸如对比度的屏幕质量。 构成:用于制造具有聚合物/ LC复合膜的LCD面板的方法包括制备具有正电路部分(2)和像素电极(3)的第一衬底(1)和具有公共电极的第二衬底(4)的步骤 (6)。 通过在基板之间插入间隔物来制备具有空白单元(7)的面板。 在空白单元中,注入用于形成聚合物/ LC复合膜(8)的组合物,其中组合物含有LC单体,UV固化单体,低聚物,聚合引发剂和二色性染料。 掩模安装在第二基板上,第一固化步骤通过经由掩模发光来进行。 在除去掩模之后,在第二基板上形成黑矩阵。 通过经由用作掩模的黑色矩阵来照射光来进行第二固化步骤。

    유기 박막 트랜지스터, 이의 제조방법 및 이를 포함하는 전자소자
    60.
    发明授权
    유기 박막 트랜지스터, 이의 제조방법 및 이를 포함하는 전자소자 有权
    有机薄膜晶体管及其制造方法,以及包括其的电子设备

    公开(公告)号:KR101831857B1

    公开(公告)日:2018-02-26

    申请号:KR1020110004137

    申请日:2011-01-14

    Abstract: 기판, 게이트전극, 게이트절연막, 유기반도체층및 소스/드레인전극을포함하고상기소스/드레인전극과유기반도체층의계면에하기화학식 1의화합물을포함하는자기조립단분자막(self-assembled monolayer)을포함하는유기박막트랜지스터가제공된다. [화학식 1]상기화학식 1의각 치환기의정의는명세서에기재된바와같다.

    Abstract translation: 包括自组装单层(自组装单层),以在基板上,一个栅电极,栅绝缘膜,包括有机半导体层和源/漏电极与源电极/漏电极和所述有机半导体层的表面包括下式的化合物 提供有机薄膜晶体管。 式(1)的取代基的定义如说明书中所述。

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