Abstract:
PURPOSE: A platinum electrode structure and method for enhancing adhesion between semiconductor substrate and platinum electrode are provided to enhance the adhesion of a Pt thin film by depositing Ti on a semiconductor substrate and modifying the surface of Ti with ion beam of low energy (a few keV), thereby to restrict the influence of an interface resulting from temperature increases. CONSTITUTION: A platinum electrode structure for a semiconductor comprises a semiconductor substrate, a TiN/Ti gradient layer formed at an upper portion of the substrate, and a Pt thin film formed at an upper portion of the gradient layer. A method of enhancing adhesion between a semiconductor substrate and a platinum electrode comprises depositing a Ti seed layer on the semiconductor substrate, forming a TiN/Ti gradient layer by irradiating nitrogen ion beam and injecting reaction gas to the surface of the Ti seed layer, and depositing a Pt thin film on the TiN/Ti gradient layer.
Abstract:
PURPOSE: A surface reforming of polyolefin or thermoplastic resin using ion assist reaction, method for toughened nylon resin is provided to give compatibility and improve interface adhesive property in manufacturing polyolefin resin, thermoplastic resin and blend of nylon by inducing functional group in polyolefin resin or thermoplastic resin. CONSTITUTION: The surface reforming of polyolefin or thermoplastic resin using ion assist reaction, method for toughened nylon resin is characterized by functionating surface of polyolefin resin powder or thermoplastic resin powder by adding reactivity gas in irradiating ion beam to polyolefin resin or thermoplastic resin powder; blending polyolefin resin powder or thermoplastic resin powder functioned of surface with nylon resin. In this method, quantity of irradiative ion beam ranges from 1*10¬15 to 1* 10¬17ions/cm2, irradiative current density is 2microA/cm¬2, acceleration energy of irradiative ion beam is 1KeV, irradiative ion is oxygen or hydrogen, additive reactivity gas is oxygen and injection quantity of reactivity gas is 0.2-6m/min.
Abstract:
PURPOSE: A method for surface-processing by plasma polymerization of a surface of a metal by using a DC discharge plasma is provided, to form a polymer with hydrophilicity or hydrophobicity on the surface of the metal. CONSTITUTION: The method comprises the steps of: positioning an anode electrode which is substantially of metal to be surface-processed and a cathode electrode in a chamber; maintaining a pressure in the chamber at a predetermined vacuum level; blowing an unsaturated aliphatic hydrocarbon monomer gas or a fluorine-containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber; and applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas or the fluorine containing monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition.
Abstract:
본 발명은 불소계수지 함유 지지체를 이용한 인쇄회로 기판의 제조방법에 관한 것으로서, 더욱 상세하게는 불소계 수지로서 특히 폴리테트라플루오로에틸렌을 이용하여 만든 기판지지체의 표면을 개질시킨 후 그 위에 회로패턴마스크를 씌우고 스퍼터링 또는 열증착으로 구리를 접착시켜 회로를 구성하므로써, 종래에 비해 간단한 공정으로 정밀하게 회로를 형성시키면서 에칭용액에 의한 환경오염을 방지할 수 있는 개선된 인쇄회로기판을 제조하는 방법에 관한 것이다.
Abstract:
본 발명은 진공 상태하에, 반응성 가스를 고분자, 세라믹, ITO 또는 유리 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 고분자, 세라믹, ITO 또는 유리 표면에 조사하여 그 표면의 접촉각을 감소시켜 고분자, 세라믹, ITO 또는 유리 표면을 개질하는 방법에 관한 것이다. 본 발명에 따른 표면 개질 방법은 재료 표면의 접촉각을 크게 감소시킴으로서 수성 물감의 번집 증가, 다른 물질과의 접착력 증가 및 빛의 산란 방지 등을 가져올 수 있어 고분자, 세라믹, ITO 또는 유리의 응용 분야에서 널리 이용될 수 있다.