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公开(公告)号：KR101131008B1
公开(公告)日：2012-03-28
申请号：KR1020100127450
申请日：2010-12-14
Applicant: 한국과학기술연구원
IPC: H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , H01L31/0445 , H01L31/18
Abstract: PURPOSE: A Se or S system thin film solar cell and a manufacturing method thereof are provided to improve photoelectric transformation efficiency of a solar battery by controlling preferred orientation of a light absorption layer through the bulk porosity adjustment of a preferred orientation control layer. CONSTITUTION: A back contact electrode(120) is formed on a substrate(110). The back contact electrode is composed of a double layer of a first back contact electrode(121) and a second back contact electrode(122). A preferred orientation control layer(130) is formed on the back contact electrode. A light absorption layer(140) is formed on the preferred orientation control layer. A window layer(150) is formed on the light absorption layer. A transparent electrode layer(160) is formed on the window layer.
Abstract translation: 目的：提供一种Se或S系薄膜太阳能电池及其制造方法，以通过通过优选的取向控制层的体积孔隙率调节来控制光吸收层的优选取向来提高太阳能电池的光电转换效率。 构成：背面接触电极（120）形成在基板（110）上。 背接触电极由第一背接触电极（121）和第二后接触电极（122）的双层构成。 在背面接触电极上形成优选的取向控制层（130）。 在优选的取向控制层上形成光吸收层（140）。 在光吸收层上形成窗口层（150）。 在窗口层上形成透明电极层（160）。
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公开(公告)号：KR101035979B1
公开(公告)日：2011-05-23
申请号：KR1020110005403
申请日：2011-01-19
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for growing a ZnO thin film, a thin film solar cell using the same, and a method for manufacturing the thin film solar cell are provided to prevent a void and a crack in a silicon thin film deposition process by making the surface of the ZnO thin film with a U-shape. CONSTITUTION: Textures in a (0002) direction and a (1120) direction are simultaneously grown by controlling a deposition temperature, a deposition pressure, or the injection ratio of precursors. The deposition temperature is controlled between 90 and 150 degrees centigrade. The deposition pressure is controlled between 0.1 and 10 torr. The precursor is made of oxygen materials and zinc materials.
Abstract translation: 目的：提供一种生长ZnO薄膜的方法，使用该薄膜太阳能电池的薄膜太阳能电池以及薄膜太阳能电池的制造方法，以防止硅薄膜沉积工艺中的空隙和裂纹， 的ZnO薄膜具有U形。 构成：通过控制沉积温度，沉积压力或前体的注射比同时生长（0002）方向和（1120）方向上的纹理。 沉积温度控制在90至150摄氏度之间。 沉积压力控制在0.1和10托之间。 前体由氧材料和锌材料制成。
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公开(公告)号：KR100998645B1
公开(公告)日：2010-12-06
申请号：KR1020080019699
申请日：2008-03-03
Applicant: 한국과학기술연구원
CPC classification number: G01N27/4145 , H01L2924/0002 , H01L2924/00
Abstract: 본 발명은 바이오 센서 소자 및 제조 방법에 관한 것이다. 즉, 본 발명은 FET 바이오센서 소자의 게이트를 생체 적합성이 탁월한 다이아몬드 박막을 사용하여 제조함으로써 센서의 수명, 반복성 및 안정성을 크게 개선시킴과 동시에, 채널 영역에 다이아몬드를 도입했던 기존의 다이아몬드 기반의 바이오 센서(Bio-sensor)와 달리 다이아몬드를 채널 영역에서 배제한 FET(Field Effect Transistor)구조를 구현하여 센서의 민감도 개선과 더불어, 실리콘(Si) 전자회로와 동시 집적이 가능하도록 한다.
바이오, 센서, 다이아몬드, 분자, DNA, 바이러스-
公开(公告)号：KR100998349B1
公开(公告)日：2010-12-03
申请号：KR1020080102175
申请日：2008-10-17
Applicant: 한국과학기술연구원
IPC: H01L21/31
Abstract: 본 발명은 다이아몬드와 금속의 밀착력 향상에 관한 것으로 보다 구체적으로는 고온, 산화 분위기에서 버퍼층의 소재 및 구조를 디자인하여 다이아몬드와 금속의 접합력을 유지하는 방법에 관한 것이다. 구체적으로 본 발명은 다이아몬드층, 금속 전극층, 및 다이아몬드층과 금속 전극층 사이에 위치하는 버퍼층을 포함하는 소자에 있어서, 상기 버퍼층이 (i) 금속 질화물층(Me-N) 및 (ii) 실리콘 질화물층(Si-N), 금속-실리콘-질화물층(Me-Si-N), 보론 질화물층(BN) 및 금속-보론 질화물층(Me-BN)으로 이루어진 군으로부터 선택되는 층을 나노두께로 반복적층한 층을 포함하는 것을 특징으로 하는 소자를 제공한다.
나노 다층막, 확산 방지 막, 다이아몬드, 금속 전극, 밀착력, metallization-
Patent Agency Ranking
公开(公告)号：KR1020100097715A
公开(公告)日：2010-09-03
申请号：KR1020107014004
申请日：2007-12-28
Applicant: 한국과학기술연구원
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C16/3431 , G11C16/349 , G11C2013/0073
Abstract: PURPOSE: A phase change memory device and a programming method thereof are provided to increase durability by applying a reverse recovery pulse. CONSTITUTION: A phase change memory array(24) comprises a plurality of phase change memory devices. A pulse generator(22) comprises a write current pulse, an erase current pulse, and a reverse recovery current pulse for the phase change memory device of a phase change memory array. The direction of the reverse recovery pulse is opposite to the direction of the write current pulse and the erase current pulse of the phase memory device. The pulse generator includes a bidirectional pulse generator which flows a current in both directions of the phase change memory device.
Abstract translation: 目的：提供相变存储器件及其编程方法，以通过施加反向恢复脉冲来提高耐久性。 构成：相变存储器阵列（24）包括多个相变存储器件。 脉冲发生器（22）包括用于相变存储器阵列的相变存储器件的写入电流脉冲，擦除电流脉冲和反向恢复电流脉冲。 反向恢复脉冲的方向与相位存储器件的写入电流脉冲和擦除电流脉冲的方向相反。 脉冲发生器包括在相变存储器件的两个方向上流过电流的双向脉冲发生器。
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公开(公告)号：KR100930079B1
公开(公告)日：2009-12-08
申请号：KR1020080027741
申请日：2008-03-26
Applicant: 한국과학기술연구원
IPC: G11B7/24073 , G11B7/243
CPC classification number: G11B7/252 , G11B7/24065 , G11B7/2531 , G11B7/2533 , G11B7/259 , G11B7/266 , G11B2007/24304 , G11B2007/24306 , G11B2007/2432
Abstract: A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.
Abstract translation: 超分辨率光学记录介质包括形成在衬底上的反射层，用于在其上记录信息的记录层，由硫属化物半导体材料制成的超分辨率层以及层叠在上表面和下表面上的第一和第二介电层 的超分辨率层。 记录层由分解温度高于信息再现温度的材料制成，并且在记录期间不形成气泡记录标记，并且超分辨率层包含选自氮，氧，硫和氮的一种或多种元素。 碳和硼。
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58.发明公开양광주가 존재하지 않는 직류 전원 플라스마 증착 장치와,양광주를 배제한 상태에서의 물질 증착 방법 및 이에 의해제조된 다이아몬드 박막 有权DC等离子体辅助化学气相沉积装置，没有一个积极的柱，在一个正极柱和一个金刚石薄层的存在下沉积材料的方法
公开(公告)号：KR1020080099743A
公开(公告)日：2008-11-13
申请号：KR1020070045695
申请日：2007-05-10
Applicant: 한국과학기술연구원
CPC classification number: C23C16/503 , C23C16/272 , Y10T428/268
Abstract: A method for depositing for coating on the surface and the apparatus is provided to deposit on the surface of the substrate introducing the reaction gas and is mounted on anode and serves both the bipolar role for being thus used are provided. A discharge in the space supplying the direct current voltage between the cathode(1) and the anode(2) which is installed in order to be faced with each other within the reaction chamber(5) and goes with electrode are disclosed, material is deposited on the surface of the substrate introducing the reaction gas and is mounted on anode and serves both the bipolar role. A method for depositing material at the state excluding a positive column(4) conducted as follows: a cathode glow(8) and anode glow(9) exist as the coating layer form coating the respective cathode and substrate surface; and the material is deposited in the small state as much as the positive column does not exist or it can ignore.
Abstract translation: 提供沉积在表面上的涂布方法和装置，以沉积在引入反应气体的基板的表面上，并且安装在阳极上并且用于提供这两者的双极作用。 公开了在反应室（5）内与阴极（1）和阳极（2）之间提供直流电压以便彼此面对并与电极相接的空间中的放电，材料沉积 在基板的表面上引入反应气体，并且安装在阳极上并起到双极作用。 存在除了阳极柱（4）以外的状态下沉积材料的方法，如下所述：阴极辉光（8）和阳极辉光（9）作为涂覆各个阴极和基板表面的涂层层形成; 并且材料以小的状态沉积，正极柱不存在或可以忽略。
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公开(公告)号：KR100767333B1
公开(公告)日：2007-10-17
申请号：KR1020060046409
申请日：2006-05-24
Applicant: 한국과학기술연구원 , 재단법인서울대학교산학협력재단
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/1675 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625 , G11C13/0004
Abstract: A non-volatile electrical phase-change memory device and a manufacturing method thereof are provided to make a uniform temperature and phase distribution within a phase-change material layer by reducing contact resistance between phase change material and electrode material. A first interlayer dielectric(21), a bottom electrode layer(22), a second interlayer dielectric(23), a phase-change material layer(24) and a top electrode layer(25) are sequentially formed on a silicon substrate(20). A contact hole(23') penetrates the second interlayer dielectric to connect the phase-change material layer with the bottom electrode layer, and is filled with phase change material or bottom electrode material. An interfacial control layer(23") is formed at an interface between the phase change material and the bottom electrode material.
Abstract translation: 提供了一种非易失性电相变存储器件及其制造方法，通过降低相变材料和电极材料之间的接触电阻，使相变材料层内的温度和相位分布均匀。 在硅衬底（20）上依次形成第一层间电介质（21），底电极层（22），第二层间电介质（23），相变材料层（24）和顶电极层（25） ）。 接触孔（23'）穿透第二层间电介质以将相变材料层与底部电极层连接，并填充有相变材料或底部电极材料。 在相变材料和底部电极材料之间的界面处形成界面控制层（23“）。
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公开(公告)号：KR100651656B1
公开(公告)日：2006-12-01
申请号：KR1020040098796
申请日：2004-11-29
Applicant: 한국과학기술연구원 , 재단법인서울대학교산학협력재단
IPC: H01L27/115
CPC classification number: H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144
Abstract: 본 발명은 비휘발성 상변화 메모리 셀에 관한 것으로서, 금속 전극층과 상변화 재료층 사이에 열구속 기능을 갖는 전극접촉 재료로서 전기전도성이 비교적 크나 열전도성은 작으며 열안정성이 우수한 투명전도성 산화물 반도체 재료를 사용한다. 본 발명에 따른 메모리 셀은 비휘발성 상변화 메모리의 데이터 기록 및 소거 동작에 필요한 전력소모의 감소에 효과적으로 적용될 수 있다.
상변화 메모리, 전극 접촉층, 투명전도성 산화물Abstract translation: 非易失性相变存储单元技术领域本发明涉及一种非易失性相变存储单元，更具体地涉及具有导电性较高但导热系数小且热稳定性优异的透明导电氧化物半导体材料的非易失性相变存储单元 使用。 根据本发明的存储单元可以有效地应用于降低非易失性相变存储器的数据写入和擦除操作所需的功耗。
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