公开(公告)号：KR1020070088356A

公开(公告)日：2007-08-29

申请号：KR1020070017161

申请日：2007-02-20

Applicant: 한국전자통신연구원 ,  숭실대학교산학협력단

Inventor： 박경현 ,  임영안 ,  고현성 ,  김동철 ,  심은덕 ,  김성복 ,  김부균 ,  김태영

IPC: H01S5/00

CPC classification number: H01S3/0675 ,  H01S5/0602 ,  H01S5/0656

Abstract: A multiple section DFB(Distributed FeedBack) laser device, a manufacturing method thereof, and a method for generating tera hertz waves are provided to vary a frequency difference of two modes discharged from a multiple section DFB laser device, from a low frequency to a tera hertz frequency by varying a periodic difference of a complex-coupled diffraction grating. A multiple section DFB laser device includes an active layer(110), a first DFB section, a second DFB section, and a phase modulation section. The active layer(110) is formed on an upper part of a substrate(101). The first DFB section is formed on one region of an upper part and a lower part of the active layer(110), and has a plurality of first diffraction gratings. The second DFB section is formed to be spaced apart from the first DFB section, and has a plurality of second diffraction gratings which are formed on one region of the lower part and the upper part of the active layer(110). The phase modulation section is formed between the first DFB section and the second DFB section. The first and second DFB sections have a waveguide(102) which is formed on the substrate(101), a first SCH(Separate Confinement Hetero) layer(109a) which is formed on the waveguide(102) of the lower part of the active layer(110), and a second SCH layer(109b) which is formed on the active layer(110).

Abstract translation: 提供多段DFB（分布式反馈）激光装置及其制造方法和用于产生多赫兹波的方法，以改变从多段DFB激光装置放出的两种模式的频率差，从低频到Tera 通过改变复耦合衍射光栅的周期性差异来产生赫兹频率。 多段DFB激光装置包括有源层（110），第一DFB部分，第二DFB部分和相位调制部分。 有源层（110）形成在基板（101）的上部。 第一DFB部分形成在有源层（110）的上部和下部的一个区域上，并且具有多个第一衍射光栅。 第二DFB部分形成为与第一DFB部分间隔开，并且具有形成在有源层（110）的下部和上部的一个区域上的多个第二衍射光栅。 相位调制部分形成在第一DFB部分和第二DFB部分之间。 第一DFB部分和第二DFB部分具有形成在基板（101）上的波导（102），形成在活动的下部的波导（102）上的第一SCH（分离限制异质）层（109a） 层（110）和形成在有源层（110）上的第二SCH层（109b）。

公开(公告)号：KR100734833B1

公开(公告)日：2007-07-03

申请号：KR1020050078384

申请日：2005-08-25

Applicant: 한국전자통신연구원

Inventor： 이대수 ,  임영안 ,  김동철 ,  박경현 ,  김성복

IPC: H01S3/067

CPC classification number: H04B10/299 ,  G02B6/12004

Abstract: 3R(Retiming, Reshaping, Reamplifying) 재생기에 관한 것이다. 본 발명에 따른 재생기의 일 태양은, 자기-펄스 발진 레이저 다이오드(self-pulsating LD)와 전기 흡수성 변조기(ElectroAbsorption Modulator : EAM)가 반도체 기판에 단일집적된 것이다.

公开(公告)号：KR1020070059854A

公开(公告)日：2007-06-12

申请号：KR1020060049246

申请日：2006-06-01

Applicant: 한국전자통신연구원

Inventor： 김기수 ,  심은덕 ,  한원석 ,  김성복

IPC: H01S5/183

CPC classification number: H01S5/18327 ,  H01S5/0286 ,  H01S5/18366 ,  H01S5/3054

Abstract: A DBR(Distributed Bragg Reflector) in a vertical cavity surface emitting laser diode and a manufacturing method thereof and a vertical cavity surface emitting laser diode are provided to improve a surface state of the DBR by reducing a laminating thickness of an InAlAs layer, thereby improving a reflection factor. A DBR in a vertical cavity surface emitting laser diode(300) includes an InP substrate(310). A plurality of InAlGaAs/InAlAs DBR layers are laminated on the InP substrate(310) and composed of an InAlGaAs layer(321,341) and an InAlAs layer(322,342) having a lower reflection factor than the InAlGaAs layer(321,341). An InAlGaAs/InP DBR layer composed of the InAlGaAs layer(321,341) and an InP layer(343) is inserted whenever a predetermined number of InAlGaAs/InAlAs DBR layers are laminated.

Abstract translation: 提供垂直腔表面发射激光二极管中的DBR（分布式布拉格反射器）及其制造方法和垂直腔表面发射激光二极管，以通过降低InAlAs层的层压厚度来改善DBR的表面状态，从而改善 反思因素。 垂直腔表面发射激光二极管（300）中的DBR包括InP衬底（310）。 多个InAlGaAs / InAlAs DBR层叠在InP衬底（310）上并由InAlGaAs层（321,341）和具有比InAlGaAs层（321,341）低的反射系数的InAlAs层（322,342）组成。 每当层叠有预定数量的InAlGaAs / InAlAs DBR层时，插入由InAlGaAs层（321,341）和InP层（343）组成的InAlGaAs / InP DBR层。

公开(公告)号：KR1020070059816A

公开(公告)日：2007-06-12

申请号：KR1020060014685

申请日：2006-02-15

Applicant: 한국전자통신연구원

Inventor： 강영식 ,  김제하 ,  김성복 ,  정용덕 ,  최광성

IPC: H01S5/026

CPC classification number: H01S5/026 ,  H01S5/0262 ,  H01S5/0265 ,  H01S5/1014 ,  H01S5/22 ,  H01S5/50

Abstract: An optically boosted electro-absorption duplexer is provided to realize a base station at low cost by performing monolithic integration through general photolithography, dry etching, and selective wet etching without using a selective area growth or butt-joint coupling method. An optically boosted electro-absorption duplexer includes a substrate(120E). A separation area(100) is formed with a first epitaxial layer composed of at least one material layer on the substrate(120E). The separation area(100) includes a first optical waveguide(100W). A photo-detecting modulating unit(200) is formed with a second epitaxial layer composed of at least one material layer on the first epitaxial layer. The photo-detecting modulating unit(200) detects and modulates an optical signal and includes a second optical waveguide(300W). An optical amplifying unit(300) is formed with a third epitaxial layer composed of at least one material layer on the second epitaxial layer. The optical amplifying unit(300) amplifies the optical signal and includes the second optical waveguide(300W) and a third optical waveguide(500W). The optical amplifying unit(300) and the photo-detecting modulating unit(200) are electrically separated from each other at the separation area(100). The optical amplifying unit(300) is formed on at least one side of the photo-detecting modulating unit(200).

Abstract translation: 提供一种光学增强的电吸收双工器，以通过通常的光刻，干法蚀刻和选择性湿法蚀刻而不使用选择性区域生长或对接耦合方法来实现低成本的基站。 光学增强的电吸收双工器包括基板（120E）。 分离区（100）形成有由衬底（120E）上的至少一个材料层构成的第一外延层。 分离区域（100）包括第一光波导（100W）。 光检测调制单元（200）形成有由第一外延层上的至少一个材料层构成的第二外延层。 光检测调制单元（200）检测并调制光信号，并包括第二光波导（300W）。 光放大单元（300）形成有由第二外延层上的至少一个材料层构成的第三外延层。 光放大单元（300）放大光信号，并包括第二光波导（300W）和第三光波导（500W）。 光学放大单元（300）和光电检测调制单元（200）在分离区域（100）处彼此电分离。 光放大单元（300）形成在光检测调制单元（200）的至少一侧。

公开(公告)号：KR100670831B1

公开(公告)日：2007-01-19

申请号：KR1020050121983

申请日：2005-12-12

Applicant: 한국전자통신연구원

Inventor： 박문호 ,  김성복 ,  백용순 ,  오광룡

IPC: H01S5/10 ,  H01S5/30

CPC classification number: H01S5/2205 ,  H01L21/761 ,  H01L29/0646 ,  H01S5/3205

Abstract: A laser diode and a method of manufacturing the same are provided to increase an optical output by forming three current implantation electrodes on the same active layer. A light waveguide having a BRS(Buried Ridge Stripe) structure includes an active layer of a resonant stripe pattern on a predetermined region of an InP substrate(10). An insulating layer pattern(50) is formed on the light waveguide in order to define a plurality of regions which are divided according to a longitudinal direction of the active layer. A plurality of electrodes is formed in each of the plurality of regions on the active layer. The electrodes are insulated from each other. A current shielding region is formed between the electrodes in order to insulate the electrodes from each other.

Abstract translation: 提供激光二极管及其制造方法以通过在同一有源层上形成三个电流注入电极来增加光输出。 具有BRS（埋藏脊条）结构的光波导包括在InP衬底（10）的预定区域上的共振条纹图案的有源层。 在光波导上形成绝缘层图案（50），以便限定根据有源层的纵向划分的多个区域。 在活性层上的多个区域的每一个上形成多个电极。 电极彼此绝缘。 在电极之间形成电流屏蔽区域，以使电极彼此绝缘。

公开(公告)号：KR100519921B1

公开(公告)日：2005-10-10

申请号：KR1020020080706

申请日：2002-12-17

Applicant: 한국전자통신연구원

Inventor： 김동철 ,  임영안 ,  이대수 ,  박경현 ,  김성복 ,  백용순 ,  심은덕

IPC: H01S5/12

CPC classification number: H01S5/06258 ,  H01S5/0657

Abstract: 본 발명은 광 전송시스템에서 넓은 전류영역에 걸쳐 균일한 광펄스가 발생되게 하여 안정화 및 신뢰성의 향상을 도모할 수 있는 초고주파 펄스 광원소자로서, 2가지의 분포궤환형 레이저 다이오드 사이로 위상조절영역을 배치시켜 다중영역 분포궤환형 레이저 다이오드를 원 칩상 상으로 구현한 것으로서, 제1 DFB영역과 제2 DFB영역으로 전류를 인가하면서 위상조절영역의 전극으로 인가되는 전류를 조절하는 것에 의해, 발생되는 다중복합 공진 모드중에서 비슷한 임계전류를 갖는 복합 공진 모드 간에 자기 모드 잠김 현상이 발생되게 하여 안정된 수십 GHz 대의 안정된 광 펄스를 얻음에 따라 폭 넓은 전류영역에서 균일한 광펄스가 발생되도록 한 것이다.

公开(公告)号：KR1020040054073A

公开(公告)日：2004-06-25

申请号：KR1020020080707

申请日：2002-12-17

Applicant: 한국전자통신연구원

Inventor： 박경현 ,  이대수 ,  김동철 ,  임영안 ,  김성복

IPC: H01S5/065

CPC classification number: B82Y20/00 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/0657 ,  H01S5/1228 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/34306

Abstract: PURPOSE: A self-mode locking semiconductor laser diode at multi region is provided to control the intensity of beams and the variation of phases by using a complex-coupling DFB laser having a particular signal oscillation mode. CONSTITUTION: A multi-region self-mode locking semiconductor laser diode includes a DFB laser region and an external resonator. The DFB laser region(DFB) includes a complex-coupling diffraction grid and an active structure for controlling the intensity of oscillated laser beam in order to oscillate the laser beam of a single mode. The external resonator(EC) includes a phase control region and an amplification region. The phase control region includes a waveguide layer for controlling a phase difference of the feedback laser beam. The amplification region includes an active structure for controlling the intensity of the laser beams. The DFB laser region and the external resonator are formed on a single substrate.

Abstract translation: 目的：提供多区域的自锁式半导体激光二极管，通过使用具有特定信号振荡模式的复耦合DFB激光器来控制光束的强度和相位的变化。 构成：多区域自锁式半导体激光二极管包括DFB激光区域和外部谐振器。 DFB激光区域（DFB）包括复耦合衍射栅格和用于控制振荡的激光束的强度以便振荡单模激光束的有源结构。 外部谐振器（EC）包括相位控制区域和放大区域。 相位控制区域包括用于控制反馈激光束的相位差的波导层。 放大区域包括用于控制激光束强度的有源结构。 DFB激光区域和外部谐振器形成在单个基板上。

公开(公告)号：KR1020030067142A

公开(公告)日：2003-08-14

申请号：KR1020020007011

申请日：2002-02-07

Applicant: 한국전자통신연구원

Inventor： 박경현 ,  송정호 ,  김성복 ,  오광룡

IPC: H01S5/10

CPC classification number: G02B6/124 ,  H01S5/1203 ,  H01S5/1215 ,  H01S5/1231

Abstract: PURPOSE: A semiconductor optical device with differential-grating is provided to fabricate an optical device including grating without using expensive equipment and form a self-pulsating distributed feedback(DFB) laser diode of high yield by using a holography method capable of increasing fabricating yield of the optical device. CONSTITUTION: An n-type InP substrate(10) is prepared. A stacked structure including a waveguide layer(22) and an active layer(26) is formed on the InP substrate. The first grating(12a) is formed under the stacked structure on the InP substrate. The second grating(32a) is formed on the stacked structure. An n-type InP clad layer(20) is further included between the first grating and the stacked structure. A p-type InP clad layer(30) is further included between the stacked structure and the second grating.

Abstract translation: 目的：提供具有差分光栅的半导体光学器件，以制造包括光栅的光学器件，而不使用昂贵的设备，并且通过使用能够提高制造成品率的全息方法形成高产量的自脉动分布反馈（DFB）激光二极管 光学装置。 构成：制备n型InP衬底（10）。 在InP衬底上形成包括波导层（22）和有源层（26）的叠层结构。 第一光栅（12a）形成在InP衬底上的层叠结构下。 第二光栅（32a）形成在堆叠结构上。 在第一光栅和堆叠结构之间还包括n型InP包覆层（20）。 在堆叠结构和第二光栅之间还包括p型InP包覆层（30）。

公开(公告)号：KR100369329B1

公开(公告)日：2003-01-24

申请号：KR1020010011091

申请日：2001-03-05

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 김성복 ,  오대곤

IPC: G02B6/42

CPC classification number: H01S5/10 ,  G02B6/1228 ,  G02B6/136

Abstract: The present invention relates to a method for fabricating an optical device integrated with a spot size converter to reduce defect and low reflectivity in a butt-joint portion, the method including the steps of: a) depositing a first clad layer, an active layer and a second clad layer sequentially on the (100) plane of a semiconductor substrate; b) forming on the second clad layer a double dielectric mask of which the lower layer has a relatively wider width than that of the upper layer, exposing one side of the second clad layer; c) wet-etching the first clad layer, the active layer and the second clad layer in a buried ridge structure by using the double dielectric mask, and exposing the (111)A plane of the active layer tilted towards the (100) plane by a predetermined angle; d) growing a spot size conversion region on the (111)A plane of the active layer; and e) removing the double dielectric mask.

Abstract translation: 本发明涉及一种用于制造与点尺寸转换器集成的光学器件以减少对接部分中的缺陷和低反射率的方法，该方法包括以下步骤：a）沉积第一包层，有源层和 在半导体衬底的（100）平面上顺序地形成第二包层; b）在第二覆盖层上形成双电介质掩模，该双电介质掩模的下层的宽度比上层的宽度宽，暴露出第二覆层的一侧; c）通过使用双电介质掩模，对第一覆盖层，有源层和第二覆盖层进行湿式蚀刻，并通过使用双电介质掩模，使活性层的（111）A面向（100）面倾斜 预定角度; d）在有源层的（111）A平面上生长光点尺寸转换区域; 和e）去除双电介质掩模。

公开(公告)号：KR100358133B1

公开(公告)日：2002-10-25

申请号：KR1020000086719

申请日：2000-12-30

Applicant: 한국전자통신연구원

Inventor： 박경현 ,  김종회 ,  백용순 ,  박문호 ,  김성복 ,  오광룡

IPC: G02B6/02

Abstract: 접촉식 노광장비를 사용하되, 측면-테이퍼 패턴 형성시 야기되는 스트레인을 흡수할 수 있는 패드를 테이퍼 끝단에 연결시킨 마스크를 사용하여 리소그라피 공정을 수행하므로써 그 끝단을 0.6um 정도로 형성한 다음, 습식식각에 의해 0.1um의 매우 균일한 측면-테이퍼 도파로(또는 활성층)을 갖는 모드변환기를 제조하는 방법이 개시되어 있다. 이에 따라, 고분해능 전자선 리소그래피법 및 스테퍼를 사용하지 않도도 되어 제작 비용을 절감할 수 있고, 접촉식 노광 장비를 사용하더라도 종래와 같이 과도한 깊은 습식식각을 수행하지 않아도 되어 측면-테이퍼 패턴 제작의 재현성을 높일 수 있다. 또한 이러한 방법에 의해 제작된 측면-테이퍼 구도의 모드변환기를 광소자와 함께 집적시켜 제작하므로써, 모드변환기의 위치 조절 및 재현성을 높여 수율 증대를 가져올 수 있다.