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公开(公告)号：KR1020070027939A
公开(公告)日：2007-03-12
申请号：KR1020050079915
申请日：2005-08-30
IPC: C07C245/10
Abstract: Provided are pentacene precursors, which are synthesized by a Diels-Alder reaction, have high solubility in organic solvent, and produce pentacene via a retro Diels-Alder reaction by pyrolysis without using vacuum devices. The pentacene precursor is a Diels-Alder reaction product of an aromatic azine compound and a benzyne equivalent and comprises at least one -N=N- bridge on a 2 to 4-positioned benzene ring of the following formula(I). The aromatic azine compound is selected from phthalazine, pyridazine, or tetrazine. The benzyne equivalent is selected from tetrabromobenzene, 2,3-dibromonaphthalene, or phthalic anhydride.
Abstract translation: 通过Diels-Alder反应合成的并五苯前体在有机溶剂中具有很高的溶解度，并且通过热解而不使用真空装置通过复古Diels-Alder反应产生并五苯。 并五苯前体是芳族吖嗪化合物和苯并对等物的Diels-Alder反应产物，并且在下述式（I）的2至4位苯环上包含至少一个-N = N-桥。 芳族吖嗪化合物选自酞嗪，哒嗪或四嗪。 苯并对当量选自四溴苯，2,3-二溴萘或邻苯二甲酸酐。
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公开(公告)号：KR100593300B1
公开(公告)日：2006-06-26
申请号：KR1020040091257
申请日：2004-11-10
Applicant: 한국전자통신연구원
IPC: C08J5/22 , H01L29/786
CPC classification number: H01L51/052 , H01L51/0052
Abstract: 본 발명은 열경화성 유기고분자 게이트 절연막 조성물 및 이를 이용한 유기박막 트랜지스터를 개시한다. 본 발명에 따른 열경화성 유기고분자 게이트 절연막 조성물은 유기고분자 게이트 절연막 소재로써 폴리비닐 페놀에 열경화성 물질을 포함시켜 내화학성과 절연특성을 향상시킨 것이고, 유기박막 트랜지스터는 상기 조성물로부터 형성된 유기고분자 게이트 절연막을 구비한다.
본 발명에 따른 유기고분자 게이트 절연막 조성물은 유기 고분자에 열경화성을 부여하여 내화학성과 절연특성을 향상시키면서, 소자 특성이 향상된 막을 형성시킬 수 있다.
폴리비닐 페놀, 게이트 절연막, 열경화성, 유기박막 트랜지스터-
53.发明公开유기물 전도체막의 미세 패터닝 방법, 이로부터 형성된미세 패턴화된 유기물 전도체막 및 이를 적용한 유기 박막트랜지스터 有权有机导电膜的精细图案方法，使用该方法的有机薄膜晶体管形成的精细图案导电膜
公开(公告)号：KR1020060064995A
公开(公告)日：2006-06-14
申请号：KR1020040103698
申请日：2004-12-09
Applicant: 한국전자통신연구원
IPC: H01L51/40 , H01L21/027
CPC classification number: H01L51/0016 , H01L21/0272
Abstract: 본 발명은 유기물 전도체막의 미세 패터닝 방법, 이로부터 형성된 미세 패턴화된 유기물 전도체막 및 미세 패턴화된 유기물 전도체막을 적용시킨 유기 박막 트랜지스터에 관한 것이다. 본 발명에 따른 유기물 전도체의 미세 패터닝 방법은 노광조건을 제어하고, 리프트 오프 방법을 적용하여 유기물의 특성에 영향을 주지 않으면서 미세 패터닝이 가능한 방법을 제공하는 것이다.
유기물, 미세 패터닝, 감광막, 리프트 오프-
公开(公告)号：KR1020040070623A
公开(公告)日：2004-08-11
申请号：KR1020030006797
申请日：2003-02-04
Applicant: 한국전자통신연구원
IPC: H01L21/205
Abstract: PURPOSE: A cold wall type low-vacuum organic vapor deposition system for an organic thin film and an organic device and a depositing method thereof are provided to form a high-pressure organic thin film by using a carrier gas for transporting organic source vapor of a low molecular organic source to the surface of a substrate. CONSTITUTION: A substrate part(139) is installed within a process chamber(110) of a cold wall type in order to support a substrate and maintain the temperature of the substrate. An organic source part(115) is used for generating an organic source gas deposited on the surface of the substrate. A vacuum pump part(200) is used for maintaining total pressure of the process chamber under the low-vacuum state during a deposition process. A carrier gas part(300) is installed within the chamber in order to distribute uniformly the organic source vapor to the surface of the substrate.
Abstract translation: 目的：提供一种用于有机薄膜的冷壁型低真空有机气相沉积系统及其有机装置及其沉积方法，以通过使用载气输送有机源蒸气形成高压有机薄膜 低分子有机源到基底表面。 构成：衬底部分（139）安装在冷壁型处理室（110）内，以便支撑衬底并保持衬底的温度。 有机源部分（115）用于产生沉积在基板表面上的有机源气体。 真空泵部件（200）用于在沉积过程中将处理室的总压力保持在低真空状态。 载体气体部分（300）安装在腔室内，以将有机源蒸气均匀地分布到基底表面。
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公开(公告)号：KR1020030056574A
公开(公告)日：2003-07-04
申请号：KR1020010086836
申请日：2001-12-28
Applicant: 한국전자통신연구원
CPC classification number: H01J9/025 , H01J2201/30403 , H01J1/30 , B82Y40/00 , C01B32/05
Abstract: PURPOSE: A field emission display and a fabricating method thereof are provided to lower a driving voltage and reduce the power consumption by forming a hole of a nano size and an emitter therein to an aspect ratio of the emitter. CONSTITUTION: A field emission display includes a silicon substrate(21), an emitter electrode(24), an insulating layer(25), a nano hole(27), an emitter(29), and a gate electrode(26). The emitter electrode is formed on an upper portion of the silicon substrate. The insulating layer is formed on an upper portion of the emitter electrode. The nano hole of a nano size is formed on the insulating layer in order to expose the emitter electrode. The emitter is formed in the inside of the nano hole. The gate electrode is formed on an upper portion of the insulating layer. The emitter electrode is formed with a doped region of the silicon substrate. A catalytic layer(28) is formed between the emitter and the emitter electrode.
Abstract translation: 目的：提供场致发射显示器及其制造方法以通过在其中形成纳米尺寸的孔和发射体来降低驱动电压并降低功耗，使发射极的纵横比成比例。 构成：场发射显示器包括硅衬底（21），发射极（24），绝缘层（25），纳孔（27），发射极（29）和栅电极（26）。 发射电极形成在硅衬底的上部。 绝缘层形成在发射电极的上部。 在绝缘层上形成纳米尺寸的纳米孔，以露出发射电极。 发射极形成在纳米孔的内部。 栅电极形成在绝缘层的上部。 发射电极形成有硅衬底的掺杂区域。 催化剂层（28）形成在发射极和发射极之间。
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Patent Agency Ranking
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公开(公告)号：KR1020170045097A
公开(公告)日：2017-04-26
申请号：KR1020160070540
申请日：2016-06-07
Applicant: 한국전자통신연구원
Abstract: 본발명은광전자소자의제조방법을제공한다. 본발명에따르면, 광전자소자의제조방법은그 상면상에제1 전극, 하부층, 및상부층이적층된기판을준비하는것, 및상기상부층상에유기가스를공급하여, 서로옆으로이격배치된광굴절패턴들을형성하는것을포함할수 있다. 상기상부층은 0.01J/m내지 3J/m의표면에너지를가질수 있다. 상기유기가스를공급하는것은유기물을가열하여, 상기유기가스를형성하는것을포함할수 있다. 상기광굴절패턴들은곡면인상부면들을가질수 있다.
Abstract translation: 本发明提供了一种制造光电子器件的方法。 根据本发明，一种制造光电子器件的方法包括：提供衬底，在该衬底上在顶表面上堆叠第一电极，底层和上层，并且将有机气体供应到顶层上; 形成图案。 顶层可具有0.01J / m至3J / m的表面能。 有机气体的供应可以包括加热有机材料以形成有机气体。 光折射图案可以具有曲面凸起表面。
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公开(公告)号：KR1020140047503A
公开(公告)日：2014-04-22
申请号：KR1020130036894
申请日：2013-04-04
Applicant: 한국전자통신연구원
IPC: G02F1/167
CPC classification number: G02F1/167 , G02F2001/1678
Abstract: A method for manufacturing a display device according to one embodiment of the present invention includes the steps of forming a bottom electrode on a bottom substrate; simultaneously forming a partition structure which includes a first partition of a first direction including an opening on the bottom electrode, a second partition which crosses the first partition on both sides of the adjacent opening and cell regions which are defined by the first and second partitions, and an ink injection tube which is extended from the first partition on one end of the partition structure; covering the partition structure with a top electrode; and filling the partition structure with electronic ink by injecting the electronic ink to the ink injection tube. [Reference numerals] (S10) Form a bottom electrode on a bottom substrate; (S20) Form partial partitions and tubes on the bottom electrode; (S30) Form a top electrode on a top substrate; (S40) Form adhesive on the top electrode; (S50) Form a display structure by attaching the partition structures to the adhesive; (S60) Inject ink between the partition structures through the tubes; (S70) Form a display device by removing the tubes
Abstract translation: 根据本发明的一个实施例的显示装置的制造方法包括在底部基板上形成底部电极的步骤; 同时形成分隔结构，其包括第一方向的第一分隔，所述第一分隔部包括在所述底部电极上的开口;第二分隔件，其穿过由所述第一和第二分隔壁限定的相邻开口和单元区域的两侧上的第一分隔; 以及从分隔结构的一端的第一隔板延伸的墨水注入管; 用顶部电极覆盖分隔结构; 以及通过将电子墨水注入到所述墨水注入管中而用电子墨水填充所述分隔结构。 （附图标记）（S10）在底部基板上形成底部电极; （S20）在底部电极上形成部分隔板和管子; （S30）在顶部基板上形成顶部电极; （S40）在顶部电极上形成粘合剂; （S50）通过将分隔结构附接到粘合剂来形成显示结构; （S60）通过管子在分隔结构之间注入墨水; （S70）通过去除管形成显示装置
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公开(公告)号：KR1020140044598A
公开(公告)日：2014-04-15
申请号：KR1020120110759
申请日：2012-10-05
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/7869 , H01L29/06 , H01L29/78696
Abstract: A thin film transistor and a manufacturing method thereof are provided. The thin film transistor includes a gate electrode on a substrate, an active layer which is adjacent to the gate electrode, a gate insulating layer between the gate electrode and the active layer, and source/drain electrodes which are connected to the active layer. The active layer includes a first active layer on the substrate and a second active layer on the first active layer. The first active layer and the second active layer include the same oxide semiconductor. The oxygen content of the oxide semiconductor in the first and second active layers is different from each other.
Abstract translation: 提供薄膜晶体管及其制造方法。 薄膜晶体管包括在基板上的栅电极，与栅电极相邻的有源层，栅电极和有源层之间的栅极绝缘层，以及连接到有源层的源/漏电极。 有源层包括衬底上的第一有源层和第一有源层上的第二有源层。 第一有源层和第二有源层包括相同的氧化物半导体。 第一和第二有源层中的氧化物半导体的氧含量彼此不同。
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公开(公告)号：KR1020130061958A
公开(公告)日：2013-06-12
申请号：KR1020110128294
申请日：2011-12-02
Applicant: 한국전자통신연구원
CPC classification number: G06F3/03545
Abstract: PURPOSE: An electronic pen pressure measuring device is provided to supply a cheap electronic pen with reliability by including an elastic unit. CONSTITUTION: A moving plate comprises a capacitance sensor with first and second fixing plates(10a,10b) and is moved according to the change of pen pressure between the first and second fixing plates. A tip(40) is attached to the moving plate to generate the pen pressure. When the moving plate is moved in a first direction, an elastic unit(50) moves the moving plate to an original position. Spacers(30a,30b) are placed between the first and second fixing plates to smoothly move the moving plate. The elastic unit is not placed between the first and second fixing plates and is formed on the moving plate.
Abstract translation: 目的：提供一种电子笔压力测量装置，通过包括弹性单元来提供便宜的电子笔的可靠性。 构成：移动板包括具有第一和第二固定板（10a，10b）的电容传感器，并且根据第一和第二固定板之间的笔压的变化而移动。 尖端（40）附接到移动板以产生笔压力。 当移动板沿第一方向移动时，弹性单元（50）将移动板移动到原始位置。 隔板（30a，30b）被放置在第一和第二固定板之间以平滑地移动移动板。 弹性单元不设置在第一和第二固定板之间，并且形成在移动板上。
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