METHOD FOR MULTI-BEAM EXPOSURE ON A TARGET
    51.
    发明申请
    METHOD FOR MULTI-BEAM EXPOSURE ON A TARGET 有权
    目标上多束曝光的方法

    公开(公告)号:US20110226968A1

    公开(公告)日:2011-09-22

    申请号:US13051714

    申请日:2011-03-18

    CPC classification number: B82Y40/00 B82Y10/00 H01J37/3177

    Abstract: For irradiating a target with a beam of energetic electrically charged particles comprising a plurality of beamlets, the target is exposed in a sequence of exposure stripes composed image pixels. These stripes (s1, s2) are, at their boundaries to adjacent stripes, provided with overlap margins (m12, m21) which are mutually overlapped, so nominal positions of image pixels in the overlap margin (m21) overlap, or substantially coincide, with image pixels in the corresponding overlap margin (m12). During the exposure of an overlap margin (m21), a first subset (n1) of image pixels in said overlap margin are exposed while those of a second subset (n2), possibly a complementary subset with respect to a desired pattern, are not exposed; contrariwise, during the exposure of the corresponding overlap margin (m12), image pixels corresponding to image pixels in the first subset are not exposed, but those corresponding to image pixels in the second subset are.

    Abstract translation: 为了用包含多个子束的能量带电粒子束照射目标,目标以组成图像像素的曝光条纹的序列曝光。 这些条纹(s1,s2)在其相邻条纹的边界处设置有相互重叠的重叠边缘(m12,m21),因此重叠边界(m21)中图像像素的标称位置重叠或基本一致,与 相应重叠余量(m12)中的图像像素。 在重叠边缘(m21)的曝光期间,暴露所述重叠边缘中的图像像素的第一子集(n1),而第二子集(n2)可能相对于期望图案可能是互补子集的 ; 相反地​​,在曝光相应重叠余量(m12)期间,与第一子集中的图像像素相对应的图像像素不被曝光,但是对应于第二子集中的图像像素的像素是。

    Particle-beam exposure apparatus with overall-modulation of a patterned beam
    52.
    发明授权
    Particle-beam exposure apparatus with overall-modulation of a patterned beam 有权
    具有图案化波束的整体调制的粒子束曝光装置

    公开(公告)号:US07781748B2

    公开(公告)日:2010-08-24

    申请号:US12294262

    申请日:2007-03-16

    Abstract: In a charged-particle exposure apparatus for exposure of a target with a beam of electrically charged particles, the illumination system includes a deflector device adapted to vary the direction of incidence of the illuminating beam upon the pattern definition device, the pattern definition device forms the shape of the illuminating beam into a desired pattern, and the projection optics system projects an image of the beam shape defined in the pattern definition device onto the target; the projection optics system includes a blocking aperture device having an opening and being adapted to block passage of beams traversing outside the opening, namely when the deflector device is activated to tilt the beamlet by a sufficient angle from its non-deflected path, e.g., for blanking out during the process of loading a pattern into the pattern definition device.

    Abstract translation: 在用于用带电粒子束曝光目标物的带电粒子曝光装置中,照明系统包括偏转装置,该偏转装置适于改变在图案定义装置上的照射光束的入射方向,图案定义装置形成 将照明光束的形状形成为期望的图案,并且投影光学系统将在图案定义装置中限定的光束形状的图像投影到目标上; 投影光学系统包括具有开口并且适于阻挡穿过开口外侧的光束通过的阻挡孔径装置,即当偏转器装置被激活以使其与其非偏转路径足够的角度倾斜时,例如, 在将图案加载到图案定义装置的过程中消隐。

    METHOD FOR PRODUCING A MULTI-BEAM DEFLECTOR ARRAY DEVICE HAVING ELECTRODES
    53.
    发明申请
    METHOD FOR PRODUCING A MULTI-BEAM DEFLECTOR ARRAY DEVICE HAVING ELECTRODES 有权
    用于制造具有电极的多光束偏转器阵列装置的方法

    公开(公告)号:US20100187434A1

    公开(公告)日:2010-07-29

    申请号:US12692679

    申请日:2010-01-25

    CPC classification number: H01J37/045 H01J37/09 H01J37/3026 H01J2237/0437

    Abstract: The disclosure relates to a method for producing a multi-beam deflector array device with a plurality of openings for use in a particle-beam exposure apparatus, in particular a projection lithography system, said method starting from a CMOS wafer and comprising the steps of generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; passivating the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, said opening stretching across abovementioned area so that the columns are arranged opposite of each other on the sidewalls of the opening.

    Abstract translation: 本发明涉及一种用于生产具有多个开口的多光束偏转器阵列器件的方法,所述多光束偏转器阵列器件用于粒子束曝光设备,特别是投影光刻系统,所述方法从CMOS晶片开始,并且包括以下步骤: 至少一对平行的沟槽在晶片坯料的第一侧上,在下面的电路层不起作用的区域的边缘处,沟槽到达散装材料层; 钝化沟槽的侧壁和底部; 将导电填充材料沉积到沟槽中,从而产生用作电极的填充材料列; 将金属接触装置附接到电极的顶部; 构造电极之间的开口,所述开口延伸穿过上述区域,使得列在开口的侧壁上彼此相对布置。

    Multi-beam deflector array device for maskless particle-beam processing
    54.
    发明授权
    Multi-beam deflector array device for maskless particle-beam processing 有权
    用于无掩模粒子束处理的多光束偏转器阵列器件

    公开(公告)号:US07687783B2

    公开(公告)日:2010-03-30

    申请号:US12038326

    申请日:2008-02-27

    Abstract: The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.

    Abstract translation: 本发明涉及一种用于使用带电粒子束的粒子束曝光装置中的多光束偏转器阵列装置,该多光束偏转器阵列装置具有带有膜区域的板状形状,该膜区域包括一个 第一面朝向输入的粒子束,一组孔,每个孔允许通过由粒子束形成的对应子束,多个凹陷,每个凹陷与至少一个孔相关联,以及阵列的 电极,每个孔与至少一个电极相关联,并且每个电极位于凹陷中,电极被配置为实现非偏转状态,其中允许通过孔的颗粒沿着期望的路径行进,并且 偏转状态,其中颗粒偏离所需的路径。

    MULTI-BEAM SOURCE
    56.
    发明申请
    MULTI-BEAM SOURCE 有权
    多波束源

    公开(公告)号:US20090026389A1

    公开(公告)日:2009-01-29

    申请号:US12178153

    申请日:2008-07-23

    Abstract: A multi-beam source for generating a plurality of beamlets of energetic electrically charged particles. The multi-beam source includes an illumination system generating an illuminating beam of charged particles and a beam-forming system being arranged after the illumination system as seen in the direction of the beam, adapted to form a plurality of telecentric or homocentric beamlets out of the illuminating beam. The beam forming system includes a beam-splitter and an electrical zone device, the electrical zone having a composite electrode composed of a plurality of substantially planar partial electrodes, adapted to be applied different electrostatic potentials and thus influencing the beamlets.

    Abstract translation: 一种用于产生能量带电粒子的多个子束的多光束源。 多光束源包括产生带电粒子的照明光束的照明系统,以及沿着光束的方向被布置在照明系统之后的束形成系统,适于在多个远心或同心圆的子束之外形成 照明光束。 光束形成系统包括分光器和电区设备,电区具有由多个基本上平面的部分电极组成的复合电极,其适于施加不同的静电电势并因此影响子束。

    PARTICLE-BEAM APPARATUS WITH IMPROVED WIEN-TYPE FILTER
    57.
    发明申请
    PARTICLE-BEAM APPARATUS WITH IMPROVED WIEN-TYPE FILTER 有权
    具有改进的WIEN型过滤器的颗粒光束装置

    公开(公告)号:US20080149846A1

    公开(公告)日:2008-06-26

    申请号:US11951543

    申请日:2007-12-06

    Abstract: In a particle-beam apparatus for irradiating a target, a pattern defined in a pattern definer is projected onto the target through a projection system by a beam of energetic electrically charged particles of, largely, a species of a nominal mass having a nominal kinetic energy. To generate the beam, a particle source, a velocity-dependent deflector and an illumination optics system are provided. The velocity-dependent deflector includes a transversal dipole electrical field and/or a transversal dipole magnetic field, which act upon the particles so as to causing a deviation of the path of the particles with regard to the paths of the nominal species which is dependent on the velocity of the particles. A delimiter is provided as a component of the pattern definer or, preferably, the projection system, serving to remove particles whose paths are deviating from the nominal path.

    Abstract translation: 在用于照射目标物的粒子束装置中,以图案定义器定义的图案通过投影系统通过能量带电的粒子束投射到目标物上,该光束的大部分具有标称质量的物质具有标称动能 。 为了产生光束,提供了粒子源,速度依赖偏转器和照明光学系统。 与速度相关的偏转器包括横向偶极电场和/或横向偶极子磁场,其作用于颗粒,从而导致颗粒相对于标称物质的路径的偏离,这取决于 颗粒的速度。 分隔符被提供为图案定义器的一个部件,或者优选地,该投影系统用于去除其路径偏离标称路径的颗粒。

    Charged-particle multi-beam exposure apparatus

    公开(公告)号:US07041992B2

    公开(公告)日:2006-05-09

    申请号:US10969493

    申请日:2004-10-20

    Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

    Particle multibeam lithography
    60.
    发明授权
    Particle multibeam lithography 有权
    粒子多光刻光刻

    公开(公告)号:US06989546B2

    公开(公告)日:2006-01-24

    申请号:US09375627

    申请日:1999-08-17

    Abstract: In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface. Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at least 20:1.

    Abstract translation: 在粒子多光刻光刻设备中,具有粒子源(203)的照明系统(242)产生带电粒子的照明光束(205)和位于照明系统(242)之后的多光束光学系统(208) 具有多个孔的阵列以形成多个子光束的至少一个孔板将所述子光束聚焦到衬底(220)的表面上,其中对于每个子光束(207),偏转单元(210) 被定位在多光束光学系统内,并且适于相对于期望的目标位置校正各个子光束的各个成像像差和/或在写入过程期间将子光束定位在衬底表面上。 优选地,对于每个子光束,第一孔径板的相应孔径限定了子束横截面的尺寸和形状,并且多光束光学系统产生基板表面上的孔的缩小图像, 至少20:1。

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