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公开(公告)号:CA2429905A1
公开(公告)日:2002-07-25
申请号:CA2429905
申请日:2001-11-30
Applicant: IBM
Inventor: YANG KEI-HSIUNG , DOANY FUAD E , GALLIGAN EILEEN A , HOUGHAM GARETH G , CHAUDHARI PRAVEEN , LACEY JAMES A , LU MINHAU , LIEN SHUI-CHIH , GLOWNIA JAMES H , DOYLE JAMES P , ROSENBLUTH ALAN E , CALLEGARI ALESSANDRO C
IPC: B01J19/12 , C01B31/02 , C23C14/48 , C23C14/58 , G02F1/1337
Abstract: A method for preparing a alignment layer surface provides a surface on the alignment layer. A chemically modified surfae [117] is formed as a result of quenching and/or ion beam treatment in accordance with the present invention, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Layer [117] is now substantially free from dangling bonds and free radicals which could degrade properties of a liquid crystal display. Now, a substrate [101] is formed for use in a liquid crystal displax device. Another method for preparing an alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.
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公开(公告)号:HK1015400A1
公开(公告)日:1999-10-15
申请号:HK99100351
申请日:1999-01-27
Applicant: IBM
Inventor: CHAUDHARI PRAVEEN , LACEY JAMES ANDREW , LIEN SHUI-CHIN ALAN , FARRELL CURTIS E
IPC: C08G73/10 , G02F1/1337 , C09K
Abstract: Liquid crystals on a polymer (eg polyimide) surface are aligned by exposure to a low energy and neutral Argon ion beam. The energy of the incident ions were varied between 75 and 500 eV, the integrated current density from 100 mu A/cm to 500mA/cm , and the angle of incidence over which alignment was measured was between 10 and 80 degrees. The pretilt angle of the liquid crystals could be varied between 0 and 8 degrees, by controlling the processing conditions. Degradation of the polyimide, which leads to charge migration, can be avoided by operating at low accelerating voltages.
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公开(公告)号:AT183021T
公开(公告)日:1999-08-15
申请号:AT95104274
申请日:1988-03-04
Applicant: IBM
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公开(公告)号:DE69030074T2
公开(公告)日:1997-09-18
申请号:DE69030074
申请日:1990-12-13
Applicant: IBM
Inventor: CHAUDHARI PRAVEEN , GAMBINO RICHARD JOSEPH , KOCH ROGER HILSEN , LAIBOWITZ ROBERT BENJAMIN , GANIN ETI , SAI-HALASZ GEORGE ANTHONY , KRUSIN-ELBAUM LIA , SUN YUAN-CHEN , WORDEMAN MATTHEW ROBERT
IPC: H01L27/092 , H01L21/8238 , H01L29/43 , H01L29/49 , H01L29/78 , H01L39/02 , H01L39/22 , H01L39/24
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公开(公告)号:DE3851809T2
公开(公告)日:1995-04-27
申请号:DE3851809
申请日:1988-07-05
Applicant: IBM
Inventor: CHAUDHARI PRAVEEN
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公开(公告)号:DE68901980T2
公开(公告)日:1993-02-25
申请号:DE68901980
申请日:1989-01-19
Applicant: IBM
Inventor: CHAUDHARI PRAVEEN , CHI CHENG-CHUNG JOHN , DIMOS DUANE BRIAN , MANNHARDT JOCHEN DIETER , TSUEI CHANG CHYI
Abstract: High-Tc superconducting devices are described in which controlled grain boundaries (GB) in a layer (12) of the superconductors form a weak link or barrier between superconducting grains (A, B) of the layer (12). A method is described for reproducibly fabricating these devices, including first preparing a substrate (10) to include at least one grain boundary (GB) therein. A high-Tc superconductor layer (12) is then epitaxially deposited on the substrate (10) in order to produce a corresponding grain boundary (GB) in the superconducting layer (12). This superconducting layer (12) is then patterned to leave at least two regions on either side of the grain boundary (GB), the two regions functioning as contact areas for a barrier device including the grain boundary (GB) as a current flow barrier. Electrical contacts (16) can be made to the superconducting regions (A, B) so that bias currents can be produced across the grain boundary (GB) which acts as a tunnel barrier or weak link connection.
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公开(公告)号:CA1017450A
公开(公告)日:1977-09-13
申请号:CA178079
申请日:1973-08-03
Applicant: IBM
Inventor: CHAUDHARI PRAVEEN , CUOMO JEROME J , GAMBINO RICHARD J
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公开(公告)号:FR2322429A1
公开(公告)日:1977-03-25
申请号:FR7621541
申请日:1976-07-06
Applicant: IBM
Inventor: CHAUDHARI PRAVEEN , WOOLHOUSE GEOFFREY R
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