公开(公告)号：EP0806699A3

公开(公告)日：1998-06-10

申请号：EP97302675

申请日：1997-04-18

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  LACEY JAMES ANDREW ,  LIEN SHUI-CHIN ALAN ,  FARRELL CURTIS E

IPC: C08G73/10 ,  G02F1/1337

CPC classification number: G02F1/13378 ,  G02F1/133723 ,  G02F2001/133738 ,  G02F2001/133742

Abstract: Liquid crystals on a polymer (eg polyimide) surface are aligned by exposure to a low energy and neutral Argon ion beam. The energy of the incident ions were varied between 75 and 500 eV, the integrated current density from 100 mu A/cm to 500mA/cm , and the angle of incidence over which alignment was measured was between 10 and 80 degrees. The pretilt angle of the liquid crystals could be varied between 0 and 8 degrees, by controlling the processing conditions. Degradation of the polyimide, which leads to charge migration, can be avoided by operating at low accelerating voltages.

公开(公告)号：HK1015400A1

公开(公告)日：1999-10-15

申请号：HK99100351

申请日：1999-01-27

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  LACEY JAMES ANDREW ,  LIEN SHUI-CHIN ALAN ,  FARRELL CURTIS E

IPC: C08G73/10 ,  G02F1/1337 ,  C09K

Abstract: Liquid crystals on a polymer (eg polyimide) surface are aligned by exposure to a low energy and neutral Argon ion beam. The energy of the incident ions were varied between 75 and 500 eV, the integrated current density from 100 mu A/cm to 500mA/cm , and the angle of incidence over which alignment was measured was between 10 and 80 degrees. The pretilt angle of the liquid crystals could be varied between 0 and 8 degrees, by controlling the processing conditions. Degradation of the polyimide, which leads to charge migration, can be avoided by operating at low accelerating voltages.

公开(公告)号：CA2089791C

公开(公告)日：1998-11-24

申请号：CA2089791

申请日：1993-02-18

Applicant: IBM

Inventor： BRADY MICHAEL J ,  MARINO JEFFREY R ,  FARRELL CURTIS E ,  KANG SUNG K ,  PURUSHOTHAMAN SAMPATH ,  MIKALSEN DONALD J ,  MOSKOWITZ PAUL A ,  O'SULLIVAN EUGENE J ,  O'TOOLE TERRENCE R ,  RIELEY SHELDON C ,  WALKER GEORGE F

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532

Abstract: Silicon and germanium containing materials are used as a surface of conductors i n electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these s urfaces. These materials are used as a surface coating for lead frames for packaging inte grated circuit chips. These materials can be decal transferred onto conductor surfaces or elect rolessly or electrolytically disposed thereon.

公开(公告)号：CA2089791A1

公开(公告)日：1993-10-25

申请号：CA2089791

申请日：1993-02-18

Applicant: IBM

Inventor： BRADY MICHAEL J ,  FARRELL CURTIS E ,  KANG SUNG K ,  MARINO JEFFREY R ,  MIKALSEN DONALD J ,  MOSKOWITZ PAUL A ,  O'SULLIVAN EUGENE J ,  O'TOOLE TERRENCE R ,  PURUSHOTHAMAN SAMPATH ,  RIELEY SHELDON C ,  WALKER GEORGE F

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532

Abstract: Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.