公开(公告)号：AU8615601A

公开(公告)日：2002-05-15

申请号：AU8615601

申请日：2001-09-17

Applicant: IBM

Inventor： BINNIG GERD K ,  DESPONT MICHEL ,  VETTIGER PETER

IPC: G01B7/34 ,  G01Q20/04 ,  G01Q60/38 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/14 ,  G11B11/03

Abstract: Read/write components for AFM-based data storage devices are provided. In particular embodiments, a read/write component (30, 45, 50, 65, 80) comprises lever means (31, 51, 66, 82) and a support structure (32, 52, 67, 81), the lever means being connected to the support structure for substantially pivotal movement. The lever means (31, 51, 66, 82) provides first and second current paths between a pair of electrical supply lines (R, C) on the support structure via which the lever means can be connected in use to power supply means operable in a write mode and a read mode. A write-mode heater (36, 47, 56, 73) is provided on the lever means in the first current path, and a read/write tip (37, 57, 74, 84) is provided on the write-mode heater. A read-mode heater (39, 46, 58, 75, 83) is provided on the lever means in the second current path. Decoupling means (38a, 38b, 40a, 40b, 60, 61, 77a, 77b, 78a, 78b) is arranged to inhibit current flow to the write-mode heater via the first current path in use when the power supply means is operated in the read mode. The component, with separate write and read-mode heaters, can thus be addressed in both the write and read modes via a single pair of supply lines. Other embodiments provide read/write components (100) employing a thermal decoupling mechanism, and read/write components (80) where read-sensing is performed by a proximity sensing arrangement between the lever means and the support structure. Sensing apparatus (115) for atomic force microscopes is also provided where tip movement can be detected via similar proximity sensing arrangements.

公开(公告)号：DE69524112D1

公开(公告)日：2002-01-03

申请号：DE69524112

申请日：1995-07-28

Applicant: IBM

Inventor： BINNIG KARL ,  ROHRER HEINRICH ,  VETTIGER PETER

IPC: G01N37/00 ,  G01N13/10 ,  G11B9/00 ,  G11B9/14 ,  G11B19/02 ,  G11B19/04 ,  G11B27/32

Abstract: The present invention concerns a storage device comprising a local probe array (72) and a storage medium (70) with an array of storage fields (71). The local probe array (72) is situated opposite to said storage medium (70) such that each local probe (73) of the local probe array can be scanned over the corresponding storage field (31, 40, 71). The storage device further comprises means (RF, 44; CF, 45) for distinguishing between information (41) to be erased from a first section of the storage medium and information in this section which is not to be erased, means for selectively copying said information which is not to be erased into a memory, preferably another section (32) of said medium, and means for erasing the whole first section.

公开(公告)号：DE69522721D1

公开(公告)日：2001-10-18

申请号：DE69522721

申请日：1995-09-29

Applicant: IBM

Inventor： BINNIG KARL ,  GUERET LEOPOLD ,  ROHRER HEINRICH ,  VETTIGER PETER

IPC: A61F11/00 ,  G01H11/00 ,  G10L11/02 ,  G10L15/28 ,  H04R25/00

Abstract: PCT No. PCT/IB95/00817 Sec. 371 Date Mar. 10, 1998 Sec. 102(e) Date Mar. 10, 1998 PCT Filed Sep. 29, 1995 PCT Pub. No. WO97/13127 PCT Pub. Date Apr. 10, 1997The present invention concerns mechanical signal processing comprising a mechanical adder as a basic building block. Such a mechanical adder (40), which is a basic element of the present invention, comprises a first micromechanical member (40.1) being sensitive to a first frequency (f1) and a second micromechanical member (40.2) being sensitive to a second frequency (f2). The two micromechanical members (40.1, 40.2) are coupled via a linear coupling (41) to provide a superposition (sum) of the two frequencies (f1 and f2). Based on the adder, AND-gates and OR-gates can be realized by adding further micromechanical members and appropriate linear and non-linear coupling elements.

公开(公告)号：CA2017303C

公开(公告)日：1995-12-12

申请号：CA2017303

申请日：1990-05-22

Applicant: IBM

Inventor： BUCHMANN PETER LEO ,  VETTIGER PETER ,  VOEGELI OTTO ,  WEBB DAVID JOHN

IPC: H01L21/302 ,  G02B6/122 ,  H01L21/3065 ,  H01L27/15 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/16 ,  H01S5/22 ,  G02B6/12 ,  G02B5/08

Abstract: A method, and devices produced therewith, for improving the flatness of etched mirror facets of integrated optic structures with non-planar stripe waveguides such as ridge or groove diode lasers or passive devices like modulators and switches. The curvature in the mirror facet surface, occurring at the edges of the waveguide due to topographical, lithographical and etch process effects, that causes detrimental phase distortions, is avoided by widening the waveguide end near the mirror surface thereby shifting the curved facet regions away from the light mode region to surface regions where curvature is not critical.

公开(公告)号：DE3886751T2

公开(公告)日：1994-06-23

申请号：DE3886751

申请日：1988-09-12

Applicant: IBM

Inventor： BUCHMANN PETER DR ,  DIETRICH HANS-PETER ,  VETTIGER PETER

IPC: H01L21/302 ,  G03F7/00 ,  H01L21/3065 ,  H01L21/308 ,  H01S3/08 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01L21/306 ,  G03F7/004 ,  H01L21/00

公开(公告)号：DE3682395D1

公开(公告)日：1991-12-12

申请号：DE3682395

申请日：1986-03-27

Applicant: IBM

Inventor： BUCHMANN PETER LEO ,  VETTIGER PETER ,  ZEGHBROECK BART JOZEF VAN

IPC: H01L21/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F7/26

Abstract: Prodn. of sidewalls for use in fabrication of structures with sub-micron lateral dimensions comprises: (a) depositing on a substrate a patterned layer of polymeric resist comprising active H (-OH, -NH, -SH) to form a profile with vertical edges where the sidewalls are to be formed; (b) treating the resist with reactive organometallic silylation agent to substitute active H with Si atoms, i.e. to silylate the top and vertical edges of the profile to a predetermined depth and render the surfaces highly oxygen dry etch resistant, and (c) anisotropic oxygen dry etching to remove silylated resist at the top of the profile and then unsilylated resist, leaving silylated vertical edges of the profile, forming the desired sidewalls, unaffected.

公开(公告)号：IT1188794B

公开(公告)日：1988-01-28

申请号：IT2608579

申请日：1979-09-28

Applicant: IBM

Inventor： SCHINDLER HANS RUDOLF ,  VETTIGER PETER

IPC: G10L11/00 ,  H04B1/66 ,  H04B

Abstract: For the multiplex transmission of coded speech signals in periodic frames, single segments (blocks of coded samples) are selectively suppressed for redundancy reduction, and are replaced on the receiver side by optimally correlated subsections of equal length from previously transmitted segments. On the transmitter side, a multiplicity of compare operations are made for each speech signal, between the respective newest coded segment and a step wise shifted subsection window of previous segments, to determine the best correlated subsection, i.e. the one which is most suitable as replacement and the respective relative offset and correlation. From a group of speech signals, the one signal, or several signals, having the best correlation is selected for suppression of a segment before transmission. Instead of each missing segment an indication of the corresponding optimum offset is transmitted in the frame header. In the receiver for each speech signal a few previous segments are kept in storage from which then, with the aid of the received offset indication the optimally suited subsection can be selected and used as replacement.

公开(公告)号：DE3172847D1

公开(公告)日：1985-12-12

申请号：DE3172847

申请日：1981-11-30

Applicant: IBM

Inventor： BRETSCHER ERWIN ,  VETTIGER PETER

IPC: H01L21/027 ,  H01J37/304

Abstract: To improve the uniformness of patterns for LSI circuits or masks generated in an electron beam lithographic system, a backscatter indicator signal (BS indicator) is obtained and used to vary a control signal (SRF) for the beam stepping rate proportional to the variations in the amount of backscattered electrons. This avoids non-uniformity such as line width variations which otherwise occur when the pattern to be generated covers border lines between two different substrate or base layer materials. Special range setting circuitry (47) is provided for adjusting, during an initial prescan of a sample of two materials having an extreme difference in their backscatter characteristic, the offset and the gain for the backscatter detector (41). During subsequent exposure of a wafer, the backscatter indicator signal and thus the stepping rate control signal variations remain within preselected limits.

公开(公告)号：DE3172457D1

公开(公告)日：1985-10-31

申请号：DE3172457

申请日：1981-12-02

Applicant: IBM

Inventor： BEHA HANSJORG DR ,  JACKEL HEINZ ,  VETTIGER PETER

IPC: G11C11/44 ,  G03F7/20 ,  H01L21/027 ,  H01L39/22

公开(公告)号：DE60323574D1

公开(公告)日：2008-10-30

申请号：DE60323574

申请日：2003-05-07

Applicant: IBM

Inventor： ALBRECHT THOMAS ,  BINNIG GERD K ,  ELEFTHERIOU EVANGELOS S ,  POZIDIS HARIS ,  SRI-JAYANTHA SRI ,  VETTIGER PETER

IPC: G11B9/00 ,  G11B9/14 ,  G11B27/10

Abstract: A storage device and a method for scanning a storage medium. A storage medium for storing data in the form of marks is scanned by an array of probes for mark detecting purposes in a scanning mode. The storage medium has fields with each field to be scanned by an associated one of the probes. At least one of the fields has marks representing operational data for operating the scanning mode. Scanning parameters are computed from the operational data and the scanning mode is adjusted according to the computed parameters.