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公开(公告)号：DE69122598D1
公开(公告)日：1996-11-14
申请号：DE69122598
申请日：1991-12-18
Applicant: SGS THOMSON MICROELECTRONICS , CONS RIC MICROELETTRONICA
Inventor： PUZZOLO SANTO , ZAMBRANO RAFFAELE , PAPARO MARIO
IPC: H01L21/8249 , H01L21/331 , H01L21/8222 , H01L27/06 , H01L27/082 , H01L29/73 , H01L29/732 , H01L21/82
Abstract: In the version with unisolated components the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer; the low voltage bipolar transistor is indeed situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In the version with isolated components, in an n- epitaxial layer there are two p+ regions, i.e. the first, constituting the power transistor base, encloses the n+ emitter region of said transistor while the second encloses two n+ regions and one p+ region constituting the collector, emitter and base regions respectively of the low voltage transistor. A metallization on the front of the chip provides connection between the collector contact of the low voltage transistor and the emitter contact of the power transistor.
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公开(公告)号：DE69213675D1
公开(公告)日：1996-10-17
申请号：DE69213675
申请日：1992-11-27
Applicant: SGS THOMSON MICROELECTRONICS , CONS RIC MICROELETTRONICA
Inventor： PAPARO MARIO , ZAMBRANO RAFFAELE
Abstract: In the device there are present a first, second and third switch designed to connect a node of the insulation region with a ground node, the collector or drain of the power transistor and a region of a control circuit transistor respectively. The dynamic insulation circuit of the control circuit comprises a pilot circuit which controls: closing of the first switch when the potential of the ground node (or insulation region) is less than the potential of the collector or drain region of the power transistor and the potential of the control circuit region, closing of the second switch and opening of the first when the potential of the collector or drain region of the power transistor is less than the potential of the ground node (or the insulation region), closing of the third switch and opening of the first when the potential of said control circuit region is less than the potential of the ground node (or the insulation region).
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公开(公告)号：DE69113987T2
公开(公告)日：1996-04-25
申请号：DE69113987
申请日：1991-04-17
Applicant: CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE
IPC: H01L21/76 , H01L21/331 , H01L21/74 , H01L21/761 , H01L21/8222 , H01L21/8228 , H01L27/06 , H01L27/082 , H01L29/73
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公开(公告)号：DE69207410D1
公开(公告)日：1996-02-15
申请号：DE69207410
申请日：1992-09-18
Applicant: CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE , PALARA SERGIO
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公开(公告)号：IT1244239B
公开(公告)日：1994-07-08
申请号：IT661090
申请日：1990-05-31
Applicant: SGS THOMSON MICROELECTRONICS , CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE , GRIMALDI ANTONIO
IPC: H01L21/8249 , H01L21/76 , H01L27/06 , H01L27/088 , H01L29/78 , H01L
Abstract: By using a diffused insulation region placed around the body region and with deeper junction and hence longer curvature radius than the typical body/drain junction values, in combination with an appropriate layout of the buried drain region underneath the power stage, breakdown voltage is maximized without compromising the Ron series resistance of the power stage and the reliability of the device.
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Patent Agency Ranking
公开(公告)号：IT1241050B
公开(公告)日：1993-12-29
申请号：IT660990
申请日：1990-04-20
Applicant: CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE
IPC: H01L21/336 , H01L21/74 , H01L21/8222 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/78 , H01L
Abstract: The invention relates to a process for forming a buried drain or collector region in monolithic semiconductor devices comprising an integrated control circuit and one or more power transistors with vertical current flow integrated in the same chip. The process allows optimization of the current-carrying capacity and the series drain resistance of the power stage and operating voltage in comparison with known structures by provision of one or more regions of high dopant concentration defined after growth of a first epitaxial layer.
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公开(公告)号：IT9006609A1
公开(公告)日：1991-10-21
申请号：IT660990
申请日：1990-04-20
Applicant: CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE
IPC: H01L20060101 , H01L21/336 , H01L21/74 , H01L21/8222 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/78
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公开(公告)号：DE69330603T2
公开(公告)日：2002-07-04
申请号：DE69330603
申请日：1993-09-30
Applicant: CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE
IPC: H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/485 , H01L29/417 , H01L29/78 , H01L23/482
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公开(公告)号：DE69427913T2
公开(公告)日：2002-04-04
申请号：DE69427913
申请日：1994-10-28
Applicant: CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE , FALLICO GIUSEPPE
IPC: H01L29/73 , H01L21/331 , H01L29/10 , H01L29/423 , H01L29/732
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公开(公告)号：DE69330556D1
公开(公告)日：2001-09-13
申请号：DE69330556
申请日：1993-05-13
Applicant: CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE
IPC: H01L21/822 , H01L27/04 , H01L27/02
Abstract: An integrated structure protection circuit suitable for protecting a power device (M) against overvoltages comprises a plurality of serially connected junction diodes (D1-D5), each having a first electrode, represented by a highly doped region (1) of a first conductivity type, and a second electrode represented by a medium doped or low doped region (2) of a second conductivity type. A first diode (D1) of said plurality has its first electrode (1) connected to a gate layer (5) of said power device (M) and its second electrode (2) connected to the second electrode (2) of at least one second diode (D2-D5) of said plurality, and said at least one second diode has its first electrode (1) connected to a drain region of the power device (M). The doping level of the second electrode (2) of the diodes (D1-D5) of said plurality is suitable to achieve sufficiently high breakdown voltage values.
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