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    MEMS-BAUELEMENT
    51.
    发明申请
    MEMS-BAUELEMENT 审中-公开
    MEMS组件

    公开(公告)号：WO2016030040A1

    公开(公告)日：2016-03-03

    申请号：PCT/EP2015/064042

    申请日：2015-06-23

    Applicant: ROBERT BOSCH GMBH

    Inventor： STUMBER, Michael ,  STEIN, Benedikt ,  SCHELLING, Christoph

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81B3/0086 ,  B81B2201/01 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81C1/00801

    Abstract: Es wird ein Schichtmaterial vorgeschlagen, das für die Realisierung von freitragenden Strukturelementen (31) mit Elektrode (7) im Schichtaufbau eines MEMS-Bauelements (102) besonders gut geeignet ist. Erfindungsgemäß soll das freitragende Strukturelement (31) zumindest teilweise aus einer Siliziumcarbonitrid (Si 1-x-y C x N y )-basierten Schicht bestehen.

    Abstract translation: 提出了一种片材，其是特别适合于悬臂的结构元件（31）与在MEMS器件（102）的层结构的电极（7）的实施。 根据本发明，自支撑的结构元件（31）以至少部分地由来自硅碳氮化物（1的Si-X-yCxNy）层为基础的。

    THIN CAPPING FOR MEMS DEVICES
    52.
    发明申请
    THIN CAPPING FOR MEMS DEVICES 审中-公开
    薄膜封装用于MEMS器件

    公开(公告)号：WO2015030657A1

    公开(公告)日：2015-03-05

    申请号：PCT/SE2014/050973

    申请日：2014-08-26

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： KÄLVESTEN, Edvard ,  EBEFORS, Thorbjörn ,  SVEDIN, Niklas

    IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/48

    CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

    Abstract: The invention relates to a device comprising a base substrate(700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from said component (702). It also comprises spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via said spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) comprises vias (710) comprising metal for providing electrical connection through said capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

    Abstract translation: 本发明涉及一种包括具有附着到其上的微型部件（702）的基底（700）的装置。 适当地，它设置有用于向所述部件（702）传导信号和从所述部件（702）传导信号的路由元件（704）。 它还包括间隔件（706），其也可以用作垂直路线信号的导电结构。 优选通过共晶接合，通过所述间隔件（706），在基底基板（700）上方设有玻璃材料的封盖结构（708），其中封盖结构（708）包括通孔（710），其包括金属 用于通过所述封盖结构提供电连接。 通孔可以通过冲压/压制方法制成，在加热下需要加压针，使玻璃软化并施加压力至玻璃中预定的深度。 然而，其他方法是可行的，例如钻孔，蚀刻，爆破。

    MICRO-ELECTROMECHANICAL VARACTOR WITH ENHANCED TUNING RANGE
    55.
    发明申请
    MICRO-ELECTROMECHANICAL VARACTOR WITH ENHANCED TUNING RANGE 审中-公开
    具有增强调谐范围的微机电变换器

    公开(公告)号：WO2004038916A2

    公开(公告)日：2004-05-06

    申请号：PCT/EP2003/012399

    申请日：2003-09-18

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  COMPAGNIE IBM FRANCE

    Inventor： CHINTHAKINDI, Anil, K. ,  GROVES, Robert, A. ,  STEIN, Kenneth, J. ,  SUBBANNA, Seshadri ,  VOLANT, Richard, P.

    IPC: H03J3/18

    CPC classification number: H01G5/18 ,  B81B2201/01 ,  H01G5/011 ,  Y10S257/924

    Abstract: A three-dimensional micro-electromechanical (MEM) varactor is described wherein a movable beam (50) and fixed electrodes (51) are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the "chip side" while the fixed bottom electrode is fabricated on a separated substrate "carrier side". Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and "flipped over", aligned and joined to the "carrier" substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.

    Abstract translation: 描述了三维微机电（MEM）变容二极管，其中可移动梁（50）和固定电极（51）分别制造在彼此耦合的分离基板上。 具有梳状驱动电极的可移动梁被制造在“芯片侧” 而固定底部电极制造在分离的基底“载体侧”上。 在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并连接到“载体”上。 衬底以形成最终器件。 梳齿驱动（鳍）电极用于致动，而电极的运动提供电容的变化。 由于所涉及的恒定驱动力，可以获得大的电容调谐范围。 该装置的三维外观具有较大的表面积。 当提供大纵横比特征时，可以使用较低的致动电压。 在制造时，MEMS器件被完全封装，不需要额外封装器件。 此外，由于可以在晶片级（晶片级MEMS封装）上进行对准和键合，因此可以以较低成本获得改进的器件产量。

    LED CHIP WITH INTEGRATED ELECTROMECHANICAL SWITCH
    56.
    发明申请
    LED CHIP WITH INTEGRATED ELECTROMECHANICAL SWITCH 审中-公开
    LED芯片与集成电动开关

    公开(公告)号：WO2016128276A1

    公开(公告)日：2016-08-18

    申请号：PCT/EP2016/052282

    申请日：2016-02-03

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： VAN DELFT, Peter ,  VAN DEN BIGGELAAR, Theodorus, Johannes, Petrus ,  RADERMACHER, Harald, Josef, Guenther ,  THEUNISSEN, Bob, Bernardus, Anthonius

    IPC: H01L27/15 ,  H01L33/36 ,  H01H1/00

    CPC classification number: H01L33/36 ,  B81B2201/01 ,  H01H1/0036 ,  H01L27/15 ,  H01L33/005

    Abstract: The invention provides an LED chip (22) having an integrated electrostatic switch (12) for electromechanical control of the LED. A suspended beam switch (12) floats above a conductive control electrode (10), and by a charging of the electrode (10) the beam (12) is attracted downward to make connection between an LED structure and an external electrode (20). Components are mounted on a common substrate (6) so that a fully integrated LED with MEMS switch is formed. Methods for producing the LED chip are further provided, wherein production of the switching mechanism is fully integrated with the production of the LED structure.

    Abstract translation: 本发明提供了一种具有用于LED的电机控制的集成静电开关（12）的LED芯片（22）。 悬挂光束开关（12）浮在导电控制电极（10）上方，并且通过电极（10）的充电，光束（12）被向下吸引以在LED结构和外部电极（20）之间形成连接。 组件安装在共同的基板（6）上，从而形成具有MEMS开关的完全集成的LED。 还提供了用于生产LED芯片的方法，其中切换机构的生产与LED结构的生产完全集成。

    INTEGRATED CAPACITIVELY-COUPLED BIAS CIRCUIT FOR RF MEMS SWITCHES
    57.
    发明申请
    INTEGRATED CAPACITIVELY-COUPLED BIAS CIRCUIT FOR RF MEMS SWITCHES 审中-公开
    用于RF MEMS开关的集成电容耦合偏置电路

    公开(公告)号：WO2015183841A1

    公开(公告)日：2015-12-03

    申请号：PCT/US2015/032498

    申请日：2015-05-26

    Applicant: RAYTHEON COMPANY

    Inventor： MORRIS, Frances, J.

    IPC: H01G5/18 ,  H01H59/00

    CPC classification number: H01G5/16 ,  B81B2201/01 ,  B81B2201/0221 ,  H01G5/18 ,  H01H59/0009 ,  H01L28/40 ,  H01L29/66181 ,  H01L29/92

    Abstract: A switchable capacitor (100) including a first electrode (104), a dielectric layer (110) on the first electrode (104), a second electrode (106) configured to be suspended in an undeflected position over the dielectric layer (110) in a de-activated state, and to deflect toward the first electrode (104) in an activated state in response to a voltage difference between the two electrodes (104,106), a gap between the second electrode (106) and the dielectric layer (110) in the activated state being less than a corresponding gap in the de-activated state, and a capacitor (120) having a first and second end, coupled to one of the electrodes at the first end, and configured to reduce the voltage difference between the electrodes (104,106) as the second electrode (106) deflects toward the first electrode (104) in the activated state, wherein the voltage difference between the electrodes corresponds to a bias voltage applied across the second end of the capacitor (120) and an other one of the first (104) and second (106) electrodes.

    Abstract translation: 一种可切换电容器（100），包括第一电极（104），第一电极（104）上的电介质层（110），第二电极（106），被配置为悬置在电介质层（110）上的未偏转位置 响应于两个电极（104,106）之间的电压差，第二电极（106）和电介质层（110）之间的间隙，在激活状态下朝着第一电极（104）偏转， 在所述激活状态小于所述去激活状态下的对应间隙，以及具有第一端和第二端的电容器（120），所述电容器（120）在所述第一端处耦合到所述电极中的一个，并且被配置为降低 作为第二电极（106）的电极（104,106）在激活状态下朝向第一电极（104）偏转，其中电极之间的电压差对应于施加在电容器（120）的第二端上的偏置电压，另一个 一个f 第一（104）和第二（106）电极。

    MICRO-ELECTROMECHANICAL VARACTOR WITH ENHANCED TUNING RANGE
    60.
    发明申请
    MICRO-ELECTROMECHANICAL VARACTOR WITH ENHANCED TUNING RANGE 审中-公开
    具有增强调谐范围的微电子变压器

    公开(公告)号：WO2004038916A3

    公开(公告)日：2004-08-12

    申请号：PCT/EP0312399

    申请日：2003-09-18

    Applicant: IBM ,  IBM FRANCE

    Inventor： CHINTHAKINDI ANIL K ,  GROVES ROBERT A ,  STEIN KENNETH J ,  SUBBANNA SESHADRI ,  VOLANT RICHARD P

    IPC: B81B7/00 ,  B81C1/00 ,  H01G5/011 ,  H01G5/18 ,  H03J3/18 ,  B81B3/00 ,  H01G5/16

    CPC classification number: H01G5/18 ,  B81B2201/01 ,  H01G5/011 ,  Y10S257/924

    Abstract: A three-dimensional micro-electromechanical (MEM) varactor is described wherein a movable beam (50) and fixed electrodes (51) are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the "chip side" while the fixed bottom electrode is fabricated on a separated substrate "carrier side". Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and "flipped over", aligned and joined to the "carrier" substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.

    Abstract translation: 描述了三维微机电（MEM）变容二极管，其中可移动光束（50）和固定电极（51）分别制造在彼此耦合的分离的基板上。 具有梳状驱动电极的可移动光束在“芯片侧”上制造，而固定底部电极制造在分离的基板“载体侧”上。 在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并接合到“载体”衬底以形成最终器件。 梳状驱动（鳍）电极用于致动，同时电极的运动提供电容的变化。 由于所涉及的驱动力恒定，可以获得大的电容调谐范围。 该装置的三维方面具有较大的表面积。 当提供大的纵横比特征时，可以使用较低的致动电压。 在制造时，MEMS器件被完全封装，不需要额外的器件封装。 此外，由于可以在晶片规模（晶片级MEMS封装）上进行取向和接合，所以可以以更低的成本获得改进的器件产量。

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