Membrane Structure Element and Method for Manufacturing Same
    52.
    发明申请
    Membrane Structure Element and Method for Manufacturing Same 有权
    膜结构元件及其制造方法

    公开(公告)号:US20090176064A1

    公开(公告)日:2009-07-09

    申请号:US12225670

    申请日:2007-03-28

    Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.

    Abstract translation: 本发明提供可以容易地制造,具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。 该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。 该方法包括:通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤,使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。

    Semiconductor device having three-dimensional construction and method for manufacturing the same
    53.
    发明授权
    Semiconductor device having three-dimensional construction and method for manufacturing the same 失效
    具有三维结构的半导体器件及其制造方法

    公开(公告)号:US07541257B2

    公开(公告)日:2009-06-02

    申请号:US11519064

    申请日:2006-09-12

    Abstract: A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.

    Abstract translation: 半导体器件包括:硅衬底; 以及设置在硅衬底上的氧化硅膜。 氧化硅膜包括从硅衬底的表面分离的部分,使得氧化硅膜提供三维结构。 通过使用三维构造,在该装置中容易添加诸如电阻器或电容器的附加功能。 此外,该三维构造的制造方法简单,成本低。

    Semiconductor device having three-dimensional construction and method for manufacturing the same
    55.
    发明申请
    Semiconductor device having three-dimensional construction and method for manufacturing the same 失效
    具有三维结构的半导体器件及其制造方法

    公开(公告)号:US20070066052A1

    公开(公告)日:2007-03-22

    申请号:US11519064

    申请日:2006-09-12

    Abstract: A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.

    Abstract translation: 半导体器件包括:硅衬底; 以及设置在硅衬底上的氧化硅膜。 氧化硅膜包括从硅衬底的表面分离的部分,使得氧化硅膜提供三维结构。 通过使用三维构造,在该装置中容易添加诸如电阻器或电容器的附加功能。 此外,该三维构造的制造方法简单,成本低。

    Method of manufacturing sensor having membrane structure
    57.
    发明申请
    Method of manufacturing sensor having membrane structure 有权
    具有膜结构的传感器的制造方法

    公开(公告)号:US20020070195A1

    公开(公告)日:2002-06-13

    申请号:US09991986

    申请日:2001-11-26

    Abstract: A sensor for measuring a physical amount such as an amount of air includes a membrane structure composed of metal stripes sandwiched between first and second insulating layers. A metal layer made of platinum or the like is formed on the first insulating layer and then heat-treated to improve its properties. Then, the metal layer is etched into a form of the metal stripes. The second insulating layer made of a material such as silicon dioxide is formed on the etched metal stripes. Since the metal layer is heat-treated before it is etched into the form of metal stripes, the metal stripes are not deformed by the heat-treatment. The second insulating layer can be formed on the metal stripes without generating cracks in the second insulating layer.

    Abstract translation: 用于测量诸如空气量的物理量的传感器包括由夹在第一和第二绝缘层之间的金属条构成的膜结构。 在第一绝缘层上形成由铂等制成的金属层,然后进行热处理以改善其性能。 然后,金属层被蚀刻成金属条纹的形式。 在蚀刻的金属条纹上形成由诸如二氧化硅的材料制成的第二绝缘层。 由于金属层在被蚀刻成金属条纹之前被热处理,金属条不会因热处理而变形。 可以在金属条上形成第二绝缘层,而不会在第二绝缘层中产生裂纹。

    Reduced deformation of micromechanical devices through thermal stabilization
    58.
    发明授权
    Reduced deformation of micromechanical devices through thermal stabilization 有权
    通过热稳定减少微机械装置的变形

    公开(公告)号:US06204085B1

    公开(公告)日:2001-03-20

    申请号:US09392136

    申请日:1999-09-08

    Abstract: A method and system of reducing the permanent accumulated deformation of a deflectable member of a micromechanical device through thermal stabilization. The accumulated deformation is due to the repeated bending or twisting of a flexible component of the micromechanical deice typically the repetitive deformation of a flexible hinge connecting a rigid member to substrate. After the device is fabricated, passivated (316), and packaged (322), the packaged device is baked (326) at a temperature of at least 120° C. A 150° C. bake for 12 to 16 hours is preferred. Lower temperatures required longer baking periods.

    Abstract translation: 一种通过热稳定来减少微机械装置的偏转构件的永久累积变形的方法和系统。 累积的变形是由于微机械装置的柔性部件的反复弯曲或扭曲通常是将刚性构件连接到基板的柔性铰链的重复变形。 在器件制造之后,钝化(316)和封装(322),封装的器件在至少120℃的温度下烘烤(326)。优选150℃烘烤12至16小时。 较低的温度需要更长的烘烤时间。

Patent Agency Ranking