公开(公告)号：CN107827077A

公开(公告)日：2018-03-23

申请号：CN201710888312.4

申请日：2017-09-27

Applicant: 广东电网有限责任公司惠州供电局 ,  清华大学

Inventor： 余占清 ,  王铁柱 ,  蔡素雄 ,  王晓蕊 ,  高士森 ,  黄泽荣 ,  施理成

IPC: B81B3/00 ,  B81C1/00 ,  B81B7/02

CPC classification number: B81B3/0032 ,  B81B7/02 ,  B81B2201/0278 ,  B81B2203/0118 ,  B81C1/0015 ,  B81C1/00158 ,  B81C2201/0166

Abstract: 本发明公开了一种涉及微机电系统领域的压阻式MEMS温度传感器。该传感器主要采用双层膜结构和惠斯通电桥技术。采用压阻式悬臂梁结构，将惠斯通电桥的四个电阻布置在四个悬臂梁的相同位置，通过引线将四个电阻连接成惠斯通电桥。能够放在狭窄的空间内直接进行点位置的温度测量。

公开(公告)号：US11952267B2

公开(公告)日：2024-04-09

申请号：US17584698

申请日：2022-01-26

Applicant: INVENSENSE, INC.

Inventor： Alan Cuthbertson ,  Daesung Lee

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00166 ,  B81B3/001 ,  B81B3/0056 ,  B81B3/0089 ,  B81B2203/04 ,  B81C1/00031 ,  B81C2201/0166 ,  B81C2201/115

Abstract: A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

公开(公告)号：US20180222748A1

公开(公告)日：2018-08-09

申请号：US15875943

申请日：2018-01-19

Applicant: Georgia Tech Research Corporation

Inventor： Benoit Hamelin ,  Farrokh Ayazi

IPC: B81C1/00 ,  B23K26/20

CPC classification number: B81C1/0065 ,  B23K26/0006 ,  B23K26/20 ,  B23K26/34 ,  B23K26/351 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/52 ,  B81B3/007 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0166 ,  B81C2201/0167 ,  B81C2201/0169 ,  H01L41/253 ,  H03H3/013 ,  H03H3/04

Abstract: Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.

公开(公告)号：US5576250A

公开(公告)日：1996-11-19

申请号：US172827

申请日：1993-12-27

Applicant: Bernard Diem ,  Marie-Therese Delaye

Inventor： Bernard Diem ,  Marie-Therese Delaye

IPC: G01P15/125 ,  B81B3/00 ,  G01P15/08 ,  G01P15/13 ,  H01L21/306 ,  H01L29/84 ,  H01L21/465

CPC classification number: B81C1/0015 ,  B81B3/0051 ,  G01P15/0802 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/053 ,  B81C2201/0166 ,  B81C2201/0177 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01 ,  Y10S73/04

Abstract: A process for the production of accelerometers using the silicon on insulator method. The process comprises the following stages: a) producing a conductive monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer; b) etching the silicon film and the insulating layer up to the substrate in order to fix the shape of the mobile elements and the measuring devices; c) producing electric contacts for the measuring devices; d) partial elimination of the insulating layer in order to free the mobile elements, the remainder of the insulating layer rendering integral the substrate and the moving elements.

Abstract translation: 使用绝缘体上的方法生产加速度计的方法。 该方法包括以下步骤：a）在硅衬底上制造导电单晶硅膜，并通过绝缘层与其分离; b）将硅膜和绝缘层蚀刻直到基板，以固定移动元件和测量装置的形状; c）产生用于测量装置的电触头; d）绝缘层的部分消除以便移动移动元件，绝缘层的其余部分使基板和移动元件成为一体。

公开(公告)号：US06929721B2

公开(公告)日：2005-08-16

申请号：US10175977

申请日：2002-06-20

Applicant: Thomas G. Bifano

Inventor： Thomas G. Bifano

IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  G03F1/20 ,  H01J37/305 ,  H01L21/302 ,  C23C14/32

CPC classification number: H01J37/3056 ,  B81C1/00666 ,  B81C2201/0166 ,  G02B26/0841 ,  G03F1/20 ,  H01L21/302

Abstract: Method and apparatus for reducing the curvature of a micromachined structure having lamella (12). Surface treatment by an ion beam (30) of the lamella (12) such as by sputtering removes regions of stress allowing the lamella (12) to return to a planar condition. The resulting outer surface is made suitable for use as a reflector and other purposes needing a substantially planar surface.

Abstract translation: 用于减小具有薄片（12）的微加工结构的曲率的方法和装置。 通过薄片（12）的离子束（30）进行表面处理，例如通过溅射去除使得薄片（12）返回到平面状态的应力区域。 所得的外表面适于用作反射器和需要基本平坦的表面的其它目的。

公开(公告)号：US20020155635A1

公开(公告)日：2002-10-24

申请号：US10175977

申请日：2002-06-20

Applicant: THE TRUSTEES OF BOSTON UNIVERSITY

Inventor： Thomas G. Bifano

IPC: H01L021/00

CPC classification number: H01J37/3056 ,  B81C1/00666 ,  B81C2201/0166 ,  G02B26/0841 ,  G03F1/20 ,  H01L21/302

Abstract: Method and apparatus for reducing the curvature of a micromachined structure having lamella (12). Surface treatment by an ion beam (30) of the lamella (12) such as by sputtering removes regions of stress allowing the lamella (12) to return to a planar condition. The resulting outer surface is made suitable for use as a reflector and other purposes needing a substantially planar surface.

Abstract translation: 用于减小具有薄片（12）的微加工结构的曲率的方法和装置。 通过薄片（12）的离子束（30）进行表面处理，例如通过溅射去除使得薄片（12）返回到平面状态的应力区域。 所得的外表面适于用作反射器和需要基本平坦的表面的其它目的。

公开(公告)号：US20230382714A1

公开(公告)日：2023-11-30

申请号：US18201710

申请日：2023-05-24

Applicant: DB HITEK CO., LTD.

Inventor： Min Hyun JUNG ,  Joo Hyeon LEE

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/0154 ,  B81C2201/014 ,  B81C2201/0133 ,  B81C2201/0166 ,  B81C2201/0164

Abstract: A MEMS microphone includes a substrate having a cavity, a diaphragm disposed above the cavity and having a ventilation path, and a back plate disposed above the diaphragm and having a plurality of air holes. The ventilation path includes a plurality of slits extending in a circumferential direction.

公开(公告)号：US5780885A

公开(公告)日：1998-07-14

申请号：US698066

申请日：1996-08-15

Applicant: Bernard Diem ,  Marie-Therese Delaye

Inventor： Bernard Diem ,  Marie-Therese Delaye

IPC: G01P15/125 ,  B81B3/00 ,  G01P15/08 ,  G01P15/13 ,  H01L21/306 ,  H01L29/84 ,  H01L29/82

CPC classification number: B81C1/0015 ,  B81B3/0051 ,  G01P15/0802 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/053 ,  B81C2201/0166 ,  B81C2201/0177 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01 ,  Y10S73/04

Abstract: Process for the production of accelerometers using the silicon on insulator method. The process comprises the following stages: a) producing a conductive monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer; b) etching the silicon film and the insulating layer up to the substrate in order to fix the shape of the mobile elements and the measuring device; c) producing electric contacts for the measuring devices; d) partial elimination of the insulating layer in order to free the mobile elements, the remainder of the insulating layer rendering integral the substrate and the moving elements.

Abstract translation: 使用绝缘体上硅法生产加速度计的方法。 该方法包括以下步骤：a）在硅衬底上制造导电单晶硅膜，并通过绝缘层与其分离; b）将硅膜和绝缘层刻蚀直到基板，以固定移动元件和测量装置的形状; c）产生用于测量装置的电触头; d）绝缘层的部分消除以便移动移动元件，绝缘层的其余部分使基板和移动元件成为一体。

公开(公告)号：EP0605300B1

公开(公告)日：1998-06-03

申请号：EP93403154.3

申请日：1993-12-23

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Diem, Bernard ,  Delaye, Marie-Thérèse

IPC: G01P15/08

CPC classification number: B81C1/0015 ,  B81B3/0051 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/053 ,  B81C2201/0166 ,  B81C2201/0177 ,  G01P15/0802 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01 ,  Y10S73/04

公开(公告)号：EP0605300A1

公开(公告)日：1994-07-06

申请号：EP93403154.3

申请日：1993-12-23

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Diem, Bernard ,  Delaye, Marie-Thérèse

IPC: G01P15/08

CPC classification number: B81C1/0015 ,  B81B3/0051 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/053 ,  B81C2201/0166 ,  B81C2201/0177 ,  G01P15/0802 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01 ,  Y10S73/04

Abstract: Ce procédé comprend les étapes suivantes : a) réalisation d'un film (32) de silicium monocristallin conducteur sur un substrat (8) en silicium et séparé de ce dernier par une couche isolante (28) ; b) gravure du film de silicium (32) et de la couche isolante (28) jusqu'au substrat (8) pour fixer la forme des éléments mobiles (2, 6) et des moyens de mesure (12, 20, 16) ; c) réalisation de contacts électriques (24, 26) pour les moyens de mesure ; d) élimination partielle de la couche isolante (32) pour dégager les éléments mobiles (2, 6), le restant de la couche isolante (28) rendant les éléments mobiles et le substrat solidaires.

Abstract translation: 此方法包括以下步骤：a）制作在硅衬底（8）和通过从后者中分离（在绝缘层28）进行单晶硅的膜（32）; b）中，以固定的移动部件的形式（2蚀刻所述硅膜（32）和绝缘层（28）下降到所述基板（8），6）和所述测量装置（12，20，16） ; c）在进行用于所述测量装置的电触头（24，26）; D）部分，以便去除绝缘层（32）以露出的移动部件（2，6），被用于连接移动部件和基板上的绝缘层（28）的其余部分。