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    FIELD EMISSION CATHODE AND A DEVICE BASED THEREON
    51.
    发明申请
    FIELD EMISSION CATHODE AND A DEVICE BASED THEREON 审中-公开
    场发射阴极及其基于设备

    公开(公告)号：WO1996003762A1

    公开(公告)日：1996-02-08

    申请号：PCT/RU1995000154

    申请日：1995-07-18

    Applicant: GIVARGIZOV, Evgeny Invievich ,  ZHIRNOV, Viktor Vladimirovich ,  STEPANOVA, Alla Nikolaevna ,  OBOLENSKAYA, Lidia Nikolaevna

    IPC: H01J01/30

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as a ballast resistor connected in series. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of (h) to the diameter (D) at the emitter base is not less than 1. The angle alpha at the emitter tip does not exceed 30 DEG . The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

    Abstract translation: 矩阵场致发射阴极（5）包括单晶硅衬底（7），其上布置有外延生长的尖晶硅发射体（1），其也用作串联连接的镇流电阻器。 在所提出的阴极的有利实施例中，对于发射极尖端处的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 （h）与发射极基底的直径（D）之比不小于1.发射极尖端的角度α不超过30°。 选择发射极材料的电阻率，以确保每个发射极的电阻与阴极和相对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料条带（11）形式的阳极（3）和在阴极（5）上投影的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。

    EMITTER TIP STRUCTURE AND FIELD EMISSION DEVICE COMPRISING SAME, AND METHOD OF MAKING SAME
    52.
    发明申请
    EMITTER TIP STRUCTURE AND FIELD EMISSION DEVICE COMPRISING SAME, AND METHOD OF MAKING SAME 审中-公开
    包括其的发射体尾部结构和场发射装置及其制造方法

    公开(公告)号：WO1994020975A1

    公开(公告)日：1994-09-15

    申请号：PCT/US1994002669

    申请日：1994-03-11

    Applicant: FED CORPORATION

    Inventor： FED CORPORATION ,  JONES, Gary, W.

    IPC: H01J19/24

    CPC classification number: H01J31/127 ,  G02B27/2235 ,  G09G3/001 ,  H01J3/022 ,  H01J9/025 ,  H01J29/028 ,  H01J29/82 ,  H01J29/94 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H04N5/70 ,  H04N5/7491

    Abstract: A vertical field emitter structure (116) and field emission device such as a flat panel display (123) utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures (321), comprising an emitter or gated emitter (328) with conductive columns connecting the emitter to an underlying resistor or conductor structure (325) formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-on voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

    Abstract translation: 垂直场致发射结构（116）和利用这种结构的场致发射器件如平板显示器（123）。 描述了自对准栅极和发射极制造，以及虚拟列场发射器结构（321），其包括发射极或门控发射极（328），其中导电柱将发射极连接到由化学或电子发射器形成的下伏电阻或导体结构（325） 下层的部分的其他修改。 本发明的显示器利用具有低导通电压和高加速电压的场致发射结构，从而可以实现高亮度，小像素尺寸，低制造成本，均匀亮度和高能量效率。

    LOW WORK-FUNCTION ELECTRODE
    53.
    发明申请
    LOW WORK-FUNCTION ELECTRODE 审中-公开
    低功能电极

    公开(公告)号：WO1999020810A1

    公开(公告)日：1999-04-29

    申请号：PCT/US1998022428

    申请日：1998-10-22

    Applicant: BOREALIS TECHNICAL LIMITED

    Inventor： BOREALIS TECHNICAL LIMITED ,  EDELSON, Jonathan, Sidney ,  COX, Isaiah, Watas

    IPC: C23C16/00

    CPC classification number: F25B21/00 ,  C23C14/12 ,  F25B2321/003 ,  F25B2400/15 ,  H01J1/02 ,  H01J1/13 ,  H01J1/14 ,  H01J1/30 ,  H01J21/04 ,  H01J21/105 ,  H01J45/00 ,  H01J2201/30426 ,  Y02B30/66

    Abstract: Methods for making low work-functions electrodes either made from or coated with an electride material (2) in which the electride material has lattice defect sites are described. Lattice defect sites are regions of the crystal structure where irregularities and deformations occur. Also provided are methods for making electrodes which consist of a substrate (1) coated with a layer of a compound comprised of a cation complexed by an electride former (2), in which said complex has lattice defect sites. In addition, methods for making electrodes which consist of a bulk metal coated with a layer of an electride former having lattice defect sites are described. The electride former stabilizes the loss of electrons by surface sites on the metal, lowering the work-function of the coated surface.

    Abstract translation: 描述了由电化学材料具有晶格缺陷位点的电化学材料（2）制成或涂覆低功函电极的方法。 晶格缺陷位点是发生不规则和变形的晶体结构区域。 还提供了制造电极的方法，该电极由涂覆有由电化学成形剂（2）络合的阳离子组成的化合物层的基底（1）组成，其中所述络合物具有晶格缺陷位点。 此外，描述了制造电极的方法，其由涂覆有具有晶格缺陷位点的电化学成形剂层的体金属组成。 电子前体通过金属上的表面位点稳定电子的损失，降低涂覆表面的功能。

    ELECTRON EMITTER
    54.
    发明申请
    ELECTRON EMITTER 审中-公开
    电子发射器

    公开(公告)号：WO99005692A1

    公开(公告)日：1999-02-04

    申请号：PCT/US1998/013377

    申请日：1998-06-26

    IPC: H01J1/304 ,  H01J1/30

    CPC classification number: H01J1/3042 ,  H01J29/04 ,  H01J2201/30426

    Abstract: An electron emitter (121, 221, 321, 421) includes an electron emitter structure (118) having a passivation layer (120, 220, 320, 420) formed thereon. The passivation layer (120, 220, 320, 420) is made from an oxide selected from a group consisting of the oxides of Ba, Ca, Sr, In, Sc, Ti, Ir, Co, Sr, Y, Zr, Ru, Pd, Sn, Lu, Hf, Re, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th, and combinations thereof. In the preferred embodiment, the electron emitter structure (118) is made from molybdenum, and the passivation layer (120, 220, 320, 420) is made from an emission-enhancing oxide having a work function that is less than the work function of the molybdenum.

    Abstract translation: 电子发射器（121,221,321,421）包括具有形成在其上的钝化层（120,220,320,420）的电子发射体结构（118）。 钝化层（120,220,320,420）由选自由Ba，Ca，Sr，In，Sc，Ti，Ir，Co，Sr，Y，Zr，Ru， Pd，Sn，Lu，Hf，Re，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Th及其组合。 在优选实施例中，电子发射器结构（118）由钼制成，并且钝化层（120,220,320,420）由具有小于功函数的功函数的发光增强氧化物制成 钼。

    PROCESS FOR MAKING A CESIATED DIAMOND FILM FIELD EMITTER AND PRODUCT THEREOF
    55.
    发明申请
    PROCESS FOR MAKING A CESIATED DIAMOND FILM FIELD EMITTER AND PRODUCT THEREOF 审中-公开
    制造一种镶嵌金刚石薄膜场致发射体及其制品的方法

    公开(公告)号：WO98044530A1

    公开(公告)日：1998-10-08

    申请号：PCT/US1998/000688

    申请日：1998-01-15

    IPC: H01J9/02

    CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2329/00

    Abstract: Process for making a cesiated diamond film emitter (58a) comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum and applying an electron beam having sufficient energy to dissociate said cesium iodide and to incorporate cesium into the interstices of the diamond film. The cesiated diamond emitter prepared according to the process has an operating voltage that is reduced by a factor of at least about 2.5 relative to conventional non-cesiated diamond film emitters.

    Abstract translation: 制造精梳金刚石膜发射器（58a）的方法包括（a）在真空中在金刚石膜上沉积一定数量的碘化铯，并施加具有足够能量的电子束以分离所述碘化铯并将铯掺入到 金刚石膜。 根据该方法制备的切割的金刚石发射体具有相对于常规非切割金刚石膜发射体减小至少约2.5倍的工作电压。

    FABRICATION AND STRUCTURE OF ELECTRON EMITTERS COATED WITH MATERIAL SUCH AS CARBON
    56.
    发明申请
    FABRICATION AND STRUCTURE OF ELECTRON EMITTERS COATED WITH MATERIAL SUCH AS CARBON 审中-公开
    用碳素材料包覆的电子发射体的制造和结构

    公开(公告)号：WO98044526A1

    公开(公告)日：1998-10-08

    申请号：PCT/US1998/003814

    申请日：1998-03-23

    IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30 ,  H01J19/24

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A cathode structure (200, 203, 204) suitable for a flat panel display is provided with coated emitters (229, 239, 230). The emitters are formed with material, typically nickel, capable of growing to a high aspect ration. These emitters are then coated with carbon containing material (240, 241) for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor (301, 305, 313, and 315) to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

    Abstract translation: 适用于平板显示器的阴极结构（200,203,204）设置有涂覆的发射器（229,239,230）。 发射体由能够生长到高长宽比的材料形成，通常为镍。 然后，这些发射体涂覆有含碳材料（240,241），以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器（301,305,313和315）以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

    DIODE STRUCTURE FLAT PANEL DISPLAY
    58.
    发明申请
    DIODE STRUCTURE FLAT PANEL DISPLAY 审中-公开
    二极管结构平板显示器

    公开(公告)号：WO1994015350A1

    公开(公告)日：1994-07-07

    申请号：PCT/US1993011796

    申请日：1993-12-06

    Applicant: MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION

    Inventor： MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION ,  KUMAR, Nalin ,  XIE, Chenggang

    IPC: H01J01/62

    CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J1/3042 ,  H01J9/027 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864

    Abstract: A matrix addressed diode flat panel display (820) including a diode pixel structure. The flat panel display includes a cathode assembly having a plurality of cathodes (210-280), each cathode including a plurality of cathode conductive material (440) and a layer of low effective work-function material (460) deposited over the cathode conductive material and an anode assembly having a plurality of anodes (290-292), each anode including a layer of anode conductive material (410) and a cathodoluminescent material (430) deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive the charged particle emissions from the cathode assembly. The display further includes means (100) for selectively varying field emissions between the plurality of corresponding light-emitting anodes and field-emission cathodes.

    Abstract translation: 一种包括二极管像素结构的矩阵寻址二极管平板显示器（820）。 平板显示器包括具有多个阴极（210-280）的阴极组件，每个阴极包括多个阴极导电材料（440）和沉积在阴极导电材料上的低有效功函数材料层（460） 以及具有多个阳极（290-292）的阳极组件，每个阳极包括沉积在阳极导电材料上的阳极导电材料层（410）和阴极发光材料（430），阳极组件位于阴极组件附近， 从而从阴极组件接收带电粒子的排放。 显示器还包括用于选择性地改变多个对应的发光阳极和场致发射阴极之间的场发射的装置（100）。

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