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公开(公告)号：KR1020110043267A
公开(公告)日：2011-04-27
申请号：KR1020090100307
申请日：2009-10-21
Applicant: 삼성전자주식회사
CPC classification number: H01L29/1606 , B82Y10/00 , H01L27/1266 , H01L29/0665 , H01L29/4908 , H01L29/66742 , H01L29/7781 , H01L29/78603 , H01L29/78684
Abstract: PURPOSE: An electric device using a two-dimensional sheet material, and a manufacturing method thereof are provided to produce a gate electrode, an insulation layer, and an active channel with the two-dimensional sheet material. CONSTITUTION: An electric device using a two-dimensional sheet material comprises successively laminated first, second, and third elements formed with the two-dimensional sheet material. The second element has the insulating property, and includes either a graphene oxide or a hexagonal boron nitride. The first and third elements include the metallic property and the semiconductor property, respectively.
Abstract translation: 目的：提供使用二维片状材料的电子装置及其制造方法，以制造具有二维片材的栅电极，绝缘层和有源沟道。 构成：使用二维片材的电子装置包括由二维片材形成的依次层叠的第一，第二和第三元件。 第二元素具有绝缘性，并且包括石墨烯氧化物或六方氮化硼。 第一和第三元素分别包括金属性质和半导体性质。
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62.发明公开
公开(公告)号：KR1020090124330A
公开(公告)日：2009-12-03
申请号：KR1020080050467
申请日：2008-05-29
Applicant: 삼성전자주식회사
IPC: H01L21/20 , H01L21/336 , H01L29/78
CPC classification number: H01L21/02491 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/02505 , H01L21/02516 , H01L21/02527 , H01L21/0262 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/16 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/7781 , H01L29/78684 , Y10T428/12674
Abstract: PURPOSE: A stack structure comprising epitaxial graphene, method of forming the stack structure and electronic device comprising the stack structure are provided to obtain the dual gate structure having the top gate and bottom gate. CONSTITUTION: The underlying layer is formed on the Si substrate(SUB1). At least one epitaxial graphene(GP1) is included on the underlying layer. The underlying layer is an h- BN(hexagonal boron nitride)(0001) layer. The Ni(111) layer is formed between the Si substrate and underlying layer. The Cu(111) layer is formed between the Si substrate and Ni(111) layer. The Si substrate is the Si(111) substrate or the Si(110) substrate.
Abstract translation: 目的：提供包括外延石墨烯的堆叠结构，形成堆叠结构的方法和包括堆叠结构的电子器件，以获得具有顶部栅极和底部栅极的双栅极结构。 构成：底层形成在Si衬底（SUB1）上。 至少一个外延石墨烯（GP1）包含在下层。 底层是h-BN（六方氮化硼）（0001）层。 Ni（111）层形成在Si衬底和下层之间。 在Si衬底和Ni（111）层之间形成Cu（111）层。 Si衬底是Si（111）衬底或Si（110）衬底。
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公开(公告)号：KR1020090014007A
公开(公告)日：2009-02-06
申请号：KR1020070078209
申请日：2007-08-03
Applicant: 삼성전자주식회사
IPC: H01L29/872
CPC classification number: H01L29/872 , H01L27/10 , H01L27/1021 , H01L27/24 , H01L29/24 , H01L29/47
Abstract: A schottky diode and memory device comprising the same is provided to realize a schottky diode with a PN diode or MOSFET by using contact of Nb oxide layer and metal layer. A schottky diode includes a first metal layer(10) and a Nb oxide layer(20). A Nb oxide layer is formed on the first metal layer, and the second metal layer(30) is formed on the Nb oxide layer. A memory device comprises a storage node and the switching element connected to the storage node. The storage node includes a data storage layer which is composed of resistance change layer, phase change layer, ferroelectric layer or magnetic layer.
Abstract translation: 提供肖特基二极管和包含该肖特基二极管的存储器件以通过使用Nb氧化物层和金属层的接触来实现具有PN二极管或MOSFET的肖特基二极管。 肖特基二极管包括第一金属层（10）和Nb氧化物层（20）。 在第一金属层上形成Nb氧化物层，在Nb氧化物层上形成第二金属层（30）。 存储设备包括存储节点和连接到存储节点的交换元件。 存储节点包括由电阻变化层，相变层，铁电层或磁性层构成的数据存储层。
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公开(公告)号：KR1020090003526A
公开(公告)日：2009-01-12
申请号：KR1020070058575
申请日：2007-06-14
Applicant: 삼성전자주식회사
IPC: H01L33/02
Abstract: The infrared emitting diode of the nano size using graphene of two-dimensional layer material are provided to improve the luminous efficiency by making same the transition speed of hole and electrons. The infrared emitting diode comprises the light-emitting layer, and the gate electrode and the isolation layer. The light-emitting layer(120) comprises the light emission region(123), the source region(121) and drain region(122). The gate electrode(114) is formed in the light emission region. The insulating layer(112) isolates the gate electrode from the light-emitting layer. The light-emitting layer is formed with at least one among the group consisting of the graphene, boron nitride, cadmiumtellurium, molybdenum disulfide, niobium die selenide into selected a one.
Abstract translation: 提供使用二维层材料的石墨烯的纳米尺寸的红外发射二极管，以通过使空穴和电子的转变速度相同来提高发光效率。 红外发射二极管包括发光层，以及栅电极和隔离层。 发光层（120）包括发光区域（123），源极区域（121）和漏极区域（122）。 栅电极（114）形成在发光区域中。 绝缘层（112）将栅电极与发光层隔离。 发光层由选自石墨烯，氮化硼，碲化镉，二硫化钼，铌硒化物组成的组中的至少一种形成。
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公开(公告)号：KR1020080110169A
公开(公告)日：2008-12-18
申请号：KR1020070058576
申请日：2007-06-14
Applicant: 삼성전자주식회사
IPC: H01L27/14
CPC classification number: H01L27/14603 , H01L22/14 , H01L27/1461
Abstract: A charge detector using graphene is provided to operate in the room temperature by using material stabilized in the room temperature including grapheme. A charge detector(100) using graphene comprises a tip(122), and a charge detecting device(110). The tip detects electric charge. The charge detecting device is formed on the tip. The charge detecting device comprises barriers(112, 113), an area-source(114) and drain region(115). The barrier is formed in both side of the electric charge detection area. Area-source and drain region are formed in the side of the barrier. The charge detecting device is integrately formed.
Abstract translation: 提供使用石墨烯的电荷检测器，通过使用在室温下稳定的材料（包括图形）在室温下操作。 使用石墨烯的电荷检测器（100）包括尖端（122）和电荷检测装置（110）。 尖端检测电荷。 电荷检测装置形成在尖端上。 电荷检测装置包括屏障（112,113），区域 - 源极（114）和漏极区域（115）。 势垒形成在电荷检测区域的两侧。 区域 - 源极和漏极区域形成在屏障的侧面。 电荷检测装置整合形成。
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Patent Agency Ranking
公开(公告)号：KR1020080101280A
公开(公告)日：2008-11-21
申请号：KR1020070047833
申请日：2007-05-16
Applicant: 삼성전자주식회사
IPC: G11C11/00
CPC classification number: H03K3/40 , G11C13/00 , G11C13/0007 , G11C2213/32 , G11C2213/77 , G11C13/0002 , G11C5/02 , G11C2213/31
Abstract: A cross-point latch and method of operating the same is provided to shorten latch time and be manufacture easily while having excellent reliability of the latch. A cross-point latch includes a signal line(1), a control line(2, 3) crossing the signal line and unipolar switch(4, 5) at the crossing of the signal line and the control line. A bipolar unipolar switch comprises the resistance changing material. The resistance changing material is one of the niO, feO, coO, nbO2, zrO2, hfO2, znO, tbO, YO and WO3. The bipolar unipolar switch is at the crossing of the first and the second control line. Different voltages are supplied to the first and the second control line with supplying the input voltage to the signal line. One of the unipolar switches is closed and the other is opened.
Abstract translation: 提供了一种交叉点闩锁及其操作方法，以缩短闩锁时间并且容易地制造，同时具有优异的闩锁可靠性。 交叉点锁存器包括信号线（1），在信号线和控制线交叉处与信号线和单极开关（4,5）相交的控制线（2,3）。 双极单极开关包括电阻变化材料。 电阻变化材料是niO，feO，coO，nbO2，zrO2，hfO2，znO，tbO，YO和WO3之一。 双极单极开关处于第一和第二控制线的交叉处。 通过向信号线提供输入电压，向第一和第二控制线提供不同的电压。 单极开关之一是闭合的，另一个是打开的。
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公开(公告)号：KR102046100B1
公开(公告)日：2019-11-18
申请号：KR1020130016595
申请日：2013-02-15
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
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公开(公告)号：KR101919425B1
公开(公告)日：2018-11-19
申请号：KR1020120112087
申请日：2012-10-09
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/16 , B82Y99/00 , H01L29/0895 , H01L29/1606 , H01L29/7391 , H01L29/78 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L29/78696
Abstract: 그래핀채널을포함한터널링전계효과트랜지스터가개시된다. 개시된터널링전계효과트랜지스터는, 기판상의제1전극, 상기제1전극상의반도체층, 상기반도체층상에서상기제1전극과이격된제1영역으로연장된그래핀채널, 상기제1영역상에서상기그래핀채널상의제2전극, 상기그래핀채널을덮는게이트절연층, 상기게이트절연층상의게이트전극을구비한다. 상기제1전극및 상기그래핀채널은제2영역에서상기반도체층을마주보고배치된다.
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公开(公告)号：KR101878737B1
公开(公告)日：2018-07-17
申请号：KR1020110083054
申请日：2011-08-19
Applicant: 삼성전자주식회사
IPC: H01L21/02 , H01L21/336 , H01L29/78 , H01L21/786
CPC classification number: H01L29/1606 , H01L21/2007 , Y10T156/10 , Y10T428/2457 , Y10T428/24612
Abstract: 트렌치를이용한그래핀전사방법및 그래핀전사대상기판이개시된다. 개시된트렌치를이용한그래핀전사방법은, 기판을패터닝하여기판의상면에트렌치를형성하는단계와, 상기기판상으로점착액을적신그래핀층을배치하는단계와, 상기그래핀층을상기기판상으로가압하는단계와, 상기기판을건조하여상기점착액을제거하는단계를구비한다.
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