公开(公告)号：KR1020040059573A

公开(公告)日：2004-07-06

申请号：KR1020020085247

申请日：2002-12-27

Applicant: 제일모직주식회사

Inventor： 이재석 ,  김원래 ,  강동헌 ,  이길성

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: PURPOSE: A slurry composition for polishing an aluminium wire is provided to increase polishing velocity without generation of corrosion or seam and to improve the dispersion stability of polishing particles, thereby enhancing polishing reproducibility. CONSTITUTION: The slurry composition comprises 0.5-10 wt% of at least one kind of metal oxide fine powder selected from the group consisting of alumina, ceria and zirconia; 1-5 wt% of an oxidizing agent; 0.001-1 wt% of a chelate complex; 0.001-2 wt% of glycol; a pH controller; and ultrapure water. Preferably the final pH of the composition is 4-10. Preferably the oxidizing agent is at least one selected from the group consisting of hydrogen peroxide, benzoyl peroxide, calcium peroxide, barium peroxide and sodium peroxide; the chelate complex is one selected from the group consisting of PDTA-Fe, EDTA-Fe and PDTA-Mg; and the glycol is at least one selected from the group consisting of monoethylene glycol and diethylene glycol.

Abstract translation: 目的：提供用于抛光铝线的浆料组合物以增加抛光速度而不产生腐蚀或接缝，并提高抛光颗粒的分散稳定性，从而提高抛光重现性。 构成：浆料组合物包含0.5-10重量％的选自氧化铝，二氧化铈和氧化锆的至少一种金属氧化物细粉末; 1-5重量％的氧化剂; 0.001-1重量％的螯合络合物; 0.001-2重量％的乙二醇; pH控制器 和超纯水。 优选地，组合物的最终pH为4-10。 优选地，氧化剂是选自过氧化氢，过氧化苯甲酰，过氧化钙，过氧化钡和过氧化钠中的至少一种; 螯合络合物选自PDTA-Fe，EDTA-Fe和PDTA-Mg; 并且所述二醇是选自由单乙二醇和二甘醇组成的组中的至少一种。

公开(公告)号：KR1020030057075A

公开(公告)日：2003-07-04

申请号：KR1020010087447

申请日：2001-12-28

Applicant: 제일모직주식회사

Inventor： 이재석 ,  김원래 ,  도원중 ,  노현수 ,  이길성

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

Abstract: PURPOSE: Provided is a slurry composition suitable for CMP(Chemical Mechanical Polishing/Planarization) process of metal line, which has a uniform polishing ability, and shows an excellent dispersion stability when stored for a long time, and does not damage a grinding machine. CONSTITUTION: The slurry composition comprises 1-30 wt% of metal oxide particles, 0.01-0.5 wt% of magnesium-based compound, 0.25-2 wt% of hydrogen peroxide, 0.01-0.05 wt% of phosphorus-based compound, 0.3-0.5 wt% of nitric acid, and the rest of deionized water. The metal oxide is at least one compound selected from the group consisting of silica(SiO2), alumina(Al2O3), zirconia, and ceria, the magnesium-based compound is at least one compound selected from the group consisting of magnesium nitrate, magnesium perchlorate, and magnesium peroxide, and the phosphorus-based compound is trimethyl phosphite or triethyl phosphite.

Abstract translation: 目的：提供适用于金属线的CMP（化学机械抛光/平面化）工艺的浆料组合物，其具有均匀的抛光能力，并且长期储存时显示出优异的分散稳定性，并且不会损坏研磨机。 构成：浆料组合物包含1-30重量％的金属氧化物颗粒，0.01-0.5重量％的镁基化合物，0.25-2重量％的过氧化氢，0.01-0.05重量％的磷基化合物，0.3-0.5 重量百分比的硝酸，其余的去离子水。 金属氧化物是选自二氧化硅（SiO 2），氧化铝（Al 2 O 3），氧化锆和二氧化铈中的至少一种化合物，镁基化合物是至少一种选自硝酸镁，高氯酸镁 和过氧化镁，磷系化合物为亚磷酸三甲酯，亚磷酸三乙酯。

公开(公告)号：KR1020030057073A

公开(公告)日：2003-07-04

申请号：KR1020010087445

申请日：2001-12-28

Applicant: 제일모직주식회사

Inventor： 이재석 ,  김원래 ,  도원중 ,  노현수 ,  이길성

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F1/16 ,  H01L21/3212 ,  H01L21/7684

Abstract: PURPOSE: A slurry composition for polishing metal lines in CMP(Chemical Mechanical Polishing) process is provided to minimize the amount of metal impurities left on the wafer surface and to prevent the diffusion of metal impurities into the semiconductors. CONSTITUTION: The slurry composition for polishing metal lines is characterized by comprising a metal oxide, an inorganic oxidant, a thiol compound, nitric acid, aqueous ammonia and deionized water. In particular, the slurry composition comprises 0.5 to 25 wt% of the metal oxide, 0.0001 to 0.01 wt% of the inorganic oxidant, 0.05 to 3.0 wt% of the thiol compound, 0.0001 to 0.01 wt% of aqueous ammonia, 0.3 to 0.5 wt% of nitric acid and the balance of deionized water.

Abstract translation: 目的：提供用于在CMP（化学机械抛光）工艺中抛光金属线的浆料组合物，以使残留在晶片表面上的金属杂质的量最小化并防止金属杂质扩散到半导体中。 构成：用于抛光金属线的浆料组合物的特征在于包含金属氧化物，无机氧化剂，硫醇化合物，硝酸，氨水和去离子水。 特别是，浆料组合物含有0.5〜25重量％的金属氧化物，0.0001〜0.01重量％的无机氧化剂，0.05〜3.0重量％的硫醇化合物，0.0001〜0.01重量％的氨水，0.3〜0.5重量％ 硝酸的百分比和去离子水的余量。

公开(公告)号：KR101526005B1

公开(公告)日：2015-06-04

申请号：KR1020120158158

申请日：2012-12-31

Applicant: 제일모직주식회사

Inventor： 노종일 ,  김원래 ,  김동진 ,  홍창기

IPC: C09K3/14 ,  H01L21/304

Abstract: 본발명의구리연마용 CMP 슬러리조성물은연마입자; 산화제; 아미노산; 부식억제제; 및탈이온수를포함하는구리연마용 CMP 슬러리조성물이며, 상기부식억제제는트리아졸, 벤조트리아졸또는이들의유도체를포함하며,상기아미노산은전체조성물중 10 내지 20 중량% 인것을특징으로한다.

公开(公告)号：KR1020140087639A

公开(公告)日：2014-07-09

申请号：KR1020120158158

申请日：2012-12-31

Applicant: 제일모직주식회사

Inventor： 노종일 ,  김원래 ,  김동진 ,  홍창기

IPC: C09K3/14 ,  H01L21/304

Abstract: A CMP slurry composition for polishing copper of the present invention is characterized by comprising polishing particles, an oxidant, an amino acid, a corrosion inhibitor, and deionized water, wherein the corrosion inhibitor comprises triazole, benzotriazole, or derivatives of the same, and the amino acid is comprised by 10-20 wt% of the total composition.

Abstract translation: 本发明的用于抛光铜的CMP浆料组合物的特征在于包括抛光颗粒，氧化剂，氨基酸，腐蚀抑制剂和去离子水，其中缓蚀剂包括三唑，苯并三唑或其衍生物， 氨基酸由总组合物的10-20重量％组成。

公开(公告)号：KR101266539B1

公开(公告)日：2013-05-23

申请号：KR1020080135723

申请日：2008-12-29

Applicant: 제일모직주식회사

Inventor： 노종일 ,  츄호머 ,  김원래 ,  이인경

IPC: C09K3/14

Abstract: 본발명의 CMP 슬러리조성물은구리배선에대하여높은연마속도를나타낼뿐만아니라, 연마균일도가우수하고, 연마시 마찰과소음이적으므로, 구리배선연마공정에유용하다.

Abstract translation: 本发明的CMP浆料组合物不仅对铜布线具有高抛光速率，而且具有优异的抛光均匀性并且在抛光过程中没有摩擦和噪音，因此可用于铜布线抛光工艺。

公开(公告)号：KR1020100077802A

公开(公告)日：2010-07-08

申请号：KR1020080135849

申请日：2008-12-29

Applicant: 제일모직주식회사

Inventor： 노종일 ,  츄호머 ,  김원래 ,  이인경 ,  박용순

IPC: C09K3/14

Abstract: PURPOSE: A chemical mechanical polishing slurry composition is provided to obtain high polishing rate of the copper wiring according to a polishing pressure and to be used for a polishing process of the copper wiring due to a high polishing speed of a barrier film. CONSTITUTION: A chemical mechanical polishing slurry composition for polishing a copper wiring comprises ultrapure water, an abrasive, an oxidizing agent, a corrosion inhibitor, an organic acid, and an additive. An acrylic aicd-acrylamide copolymer is used as the additive with an amount of 0.001-0.04 weight% based on the total slurry composition. The acrylic acid-acrylamide copolymer has a copolymerization ratio of 1:30 - 10:1, respectively and an average molecular weight of 100,000 - 400,000.

Abstract translation: 目的：提供化学机械抛光浆料组合物，以根据研磨压力获得铜布线的高抛光速率，并且由于阻挡膜的高抛光速度而用于铜布线的抛光工艺。 构成：用于抛光铜布的化学机械抛光浆料组合物包括超纯水，研磨剂，氧化剂，腐蚀抑制剂，有机酸和添加剂。 基于总浆料组合物，使用丙烯酸Aicd-丙烯酰胺共聚物作为添加剂，其量为0.001-0.04重量％。 丙烯酸 - 丙烯酰胺共聚物的共聚比分别为1:30-10:1，平均分子量为100,000-400,000。

公开(公告)号：KR100949248B1

公开(公告)日：2010-03-26

申请号：KR1020070102314

申请日：2007-10-10

Applicant: 제일모직주식회사

Inventor： 츄호머 ,  김원래 ,  노종일 ,  정영철 ,  이인경

IPC: C09K3/14 ,  H01L21/304

Abstract: 본 발명은 금속 연마용 CMP 슬러리 조성물에 관한 것으로, 더 상세하게는 부식 방지제를 첨가하지 않은 연마 조성물의 연마 표면의 E
O (개방 회로 전위)에 비교하여 연마 표면의 E
O 를 5% 이상 30% 이하로 증가시키는 부식 방지제를 포함하는 슬러리 조성물에 관한 것이다.

본 발명에 의하면 연마되는 웨이퍼의 표면 부식이 없으면서도 유기 찌꺼기 발생이 없는 연마 조성물을 제공할 수 있다.
금속, 연마, CMP 슬러리, 부식 방지제, Eo, 부식, 찌꺼기

公开(公告)号：KR1020090036982A

公开(公告)日：2009-04-15

申请号：KR1020070102311

申请日：2007-10-10

Applicant: 제일모직주식회사

Inventor： 김원래 ,  노종일 ,  츄호머 ,  정영철 ,  이인경

IPC: C09K3/14

Abstract: A slurry composition for polishing a copper line is provided to minimize erosion and dishing by controlling the polishing speed of copper line, barrier film and insulating film and to improve the storage stability of a slurry composition. A slurry composition for polishing a copper line comprises ultrapure, abrasive, organic acid, oxidizer and corrosion inhibitor. A slurry composition for polishing bulk copper comprises abrasive of which the mean value of a first particle diameter is 1~30 nm, and the particle association degree is 3 or less. A slurry composition for polishing a barrier comprises abrasive of which the mean value of a first particle diameter is 30~100nm, and the particle association degree is 3 or less.

Abstract translation: 提供了用于抛光铜线的浆料组合物，以通过控制铜线，阻挡膜和绝缘膜的抛光速度来最小化侵蚀和凹陷，并提高浆料组合物的储存稳定性。 用于抛光铜线的浆料组合物包括超纯，磨料，有机酸，氧化剂和腐蚀抑制剂。 用于抛光体铜的浆料组合物包括第一粒径的平均值为1〜30nm，粒子缔合度为3以下的研磨剂。 用于研磨阻挡层的浆料组合物包括第一粒径的平均值为30〜100nm，粒子缔合度为3以下的研磨剂。

公开(公告)号：KR100819769B1

公开(公告)日：2008-04-08

申请号：KR1020060138193

申请日：2006-12-29

Applicant: 제일모직주식회사

Inventor： 임건자 ,  이인경 ,  강동헌 ,  김원래 ,  최원영

IPC: C09K3/14

Abstract: A chemical mechanical polishing slurry composition is provided to realize a high polishing rate and improved polishing selectivity even at a low concentration, and to reduce erosion and dicing. A chemical mechanical polishing slurry composition comprises a solid solution containing at least one rare earth metal or rare earth metal oxide selected from Y2O3, Y, Gd and Gd2O3 incorporated into the matrix of polishing particles with a uniform distribution. The matrix comprises at least one selected from the group consisting of Si, SiO2, Al, Al2O3, Ce, CeO2, Ti, TiO2, Zr and ZrO2. The solid solution is used in an amount of 0.01-30 wt% based on the total weight of the slurry composition.

Abstract translation: 提供化学机械抛光浆料组合物，以便即使在低浓度下实现高抛光速率和改善的抛光选择性，并且减少侵蚀和切割。 化学机械抛光浆料组合物包含含有至少一种选自Y 2 O 3，Y，Gd和Gd 2 O 3的稀土金属或稀土金属氧化物的固溶体，所述稀土金属或稀土金属氧化物以均匀分布结合到抛光颗粒的基质中。 该基质包括选自Si，SiO 2，Al，Al 2 O 3，Ce，CeO 2，Ti，TiO 2，Zr和ZrO 2中的至少一种。 固体溶液的使用量基于浆料组合物的总重量为0.01-30重量％。