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公开(公告)号：KR1020030092735A
公开(公告)日：2003-12-06
申请号：KR1020020030514
申请日：2002-05-31
Applicant: 한국과학기술연구원
IPC: H01Q11/00
Abstract: PURPOSE: A ceramic chip antenna is provided to reduce the size of structure by connecting a plurality of helical conductors to a single feeding unit. CONSTITUTION: A chip main frame(100) is produced by layering a plurality of green sheets, each of which is made of a ceramic insulating material. A first helical conductor(120) and a second helical conductor(130) are formed within the chip main frame(100). A single power supplying unit is connected to the first helical conductor(120) and the second helical conductor(130) to apply a predetermined voltage to the first helical conductor(120) and the second helical conductor(130). The first helical conductor(120) and the second helical conductor(130) have an identical spiral rotational axis centering on the single power supplying unit.
Abstract translation: 目的：提供陶瓷芯片天线，以通过将多个螺旋导体连接到单个馈送单元来减小结构的尺寸。 构成：通过层叠多个生坯片来制造芯片主框架（100），每个生坯片由陶瓷绝缘材料制成。 第一螺旋导体（120）和第二螺旋导体（130）形成在芯片主框架（100）内。 单个供电单元连接到第一螺旋导体（120）和第二螺旋导体（130），以向第一螺旋导体（120）和第二螺旋导体（130）施加预定电压。 第一螺旋导体（120）和第二螺旋导体（130）具有以单个供电单元为中心的相同螺旋旋转轴。
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公开(公告)号：KR100356641B1
公开(公告)日：2002-10-18
申请号：KR1020000016760
申请日：2000-03-31
Applicant: 한국과학기술연구원
Abstract: 본 발명은 조성식 (1-x)(Al
1/2 Ta
1/2 )O
2 - x(Mg
1/3 Ta
2/3 )O
2 로 표시되고, x의 범위가 0≤x≤1인 고주파용 유전체 조성물을 제공한다. 이 조성물은 유전율이 8.7 내지 27.1이고, Qxf
O (GHz)가 6500 내지 111230이며, 공진 주파수의 온도 계수(τ
f )의 범위가 -55.2 내지 +51.2 ppm/℃로서 조성의 변화에 따라 τ
f 를 0 ppm/℃로 조절이 가능하여 고주파용 유전체 세라믹스 부품의 재료로서 사용될 수 있는 우수한 특성을 갖는 고주파용 유전체 조성물이다.-
公开(公告)号：KR1020020074714A
公开(公告)日：2002-10-04
申请号：KR1020010014667
申请日：2001-03-21
Applicant: 한국과학기술연구원
CPC classification number: C04B35/46 , C04B35/10 , C04B2111/00844 , C04B2111/90 , H01B3/12 , H01P7/10
Abstract: PURPOSE: Provided is a microwave dielectric ceramic composition of the (1-x)(Al1/2Ta1/2)O2-xTiO2 system having high dielectric constant, large Q value, and temperature coefficient of resonant frequency which can be turned to zero. CONSTITUTION: The dielectric ceramic composition is expressed by the formula of (1-x)(Al1/2Ta1/2)O2-xTiO2, wherein x is in the range of 0.1
Abstract translation: 目的：提供具有高介电常数，大Q值和谐振频率温度系数可以变为零的（1-x）（Al1 / 2Ta1 / 2）O2-xTiO2系的微波介电陶瓷组合物。 构成：电介质陶瓷组合物由式（1-x）（Al1 / 2Ta1 / 2）O2-xTiO2表示，其中x在0.1≤x≤0.5的范围内。 该组成范围的材料的介电常数为14.1〜45.5，Qxfo为6700-78690GHz，共振频率（TCF）的温度系数为-31.7〜+ 99.9ppm /℃。 该组合物用于诸如谐振器，双工器，滤波器等移动电信设备。
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公开(公告)号：KR100327153B1
公开(公告)日：2002-03-13
申请号：KR1019990037026
申请日：1999-09-02
Applicant: 한국과학기술연구원
IPC: C04B35/468 , H01G4/12
Abstract: 본발명은하기조성식으로표시되는, 높은유전율과품질계수(Q값)를갖고공진주파수의온도계수가우수한고주파용유전체조성물을제공한다. x(BaCaMg)O-0.125NdO-zTiO+vBiO+wAlO 상기식에서, x, y, z, v, w는각각 0.13≤x≤0.16, 0.01≤y≤0.10, 0.59≤z≤0.62, 10≤v(wt%)≤11.5, 0≤w(wt%)≤1.5이다. 또한, 상기고주파용유전체조성물은 x, y, z, v, w가각각 x=0.15, 0.07≤y≤0.10, z=0.60, 10≤v(wt%)≤11, 0≤w(wt%)≤1.5일때, 공진주파수의온도계수가 ±10 이내로실제이용이가능한조성물을포함한다. 이조성물은고순도(>99.9%)의원료를사용할경우유전율이 82 내지 97이고, Qxf(GHz)가 3400 내지 5480이며, 공진주파수의온도계수(TCF)의범위가 0 내지 +37 ppm/℃로서조성의변화에따라공진주파수의온도계수(TCF)를 0 ppm/℃로조절할수 있다. 양산용저순도(
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公开(公告)号：KR100265675B1
公开(公告)日：2000-09-15
申请号：KR1019980007447
申请日：1998-03-06
Applicant: 한국과학기술연구원
Abstract: PURPOSE: An integral dielectric filter is provided to easily control a band width by controlling a capacitance connection between two resonators which are present in one block. CONSTITUTION: One dielectric block(1) has a hexahedral shape. Two resonating holes(2,2') are longitudinally formed in the dielectric block(1). The two resonating holes(2,2') include an open surface(3) which is electrically opened and a short surface which is electrically shorted. The short surface of the two resonating holes(2,2') acts as an external electrode for a ground of a dielectric filter. Input and output electrode terminals(4,4') are symmetrically formed to each other. The input and output electrode terminals(4,4') and the external electrode(8) are divided into each other and electrically intercepted.
Abstract translation: 目的：提供一个整体介质滤波器，通过控制一个块中存在的两个谐振器之间的电容连接来容易地控制带宽。 构成：一个介质块（1）具有六面体形状。 两个谐振孔（2,2'）在介质块（1）中纵向形成。 两个谐振孔（2,2'）包括电气打开的开放表面（3）和电短路的短表面。 两个谐振孔（2,2'）的短表面用作介质滤波器的接地的外部电极。 输入和输出电极端子（4,4'）彼此对称地形成。 输入和输出电极端子（4,4'）和外部电极（8）彼此分开并电截取。
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Patent Agency Ranking
公开(公告)号：KR20210020386A
公开(公告)日：2021-02-24
申请号：KR20190099604
申请日：2019-08-14
Applicant: 한국과학기술연구원
Abstract: 본명세서에서는, 투명전도성산화물박막으로서, 투명전도성산화물층; 및은(Ag)계열금속합금을포함하는금속층;을포함하며, 상기금속층은투명전도성산화물층상에적층되고, 상기은(Ag) 계열금속합금은하기 [화학식 1]의조성을갖는은(Ag) 및타이타늄(Ti)의합금인, 투명전도성산화물박막이제공된다. [화학식 1] AgTix (여기서, x는 0
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公开(公告)号：KR101848012B1
公开(公告)日：2018-04-11
申请号：KR1020160151113
申请日：2016-11-14
Applicant: 한국과학기술연구원
CPC classification number: G01N25/18 , G01K7/01 , G01N25/4826
Abstract: 본발명은열전반도체의열전도도및 열전성능지수측정에대한것으로, 보다상세하게는기존하만법에서발생하는도선에서의열 손실, 재료자체발열에의한오차를보정하는방법을제공하는데에목적이있다. 해당의오차보정방법은열전반도체의성능과물성을다양한온도에서보다정확하게평가하는데 용이하게응용될수 있고, 정확한열전반도체의물성평가는열전소자설계에유용하게쓰일수 있다는효과가있다.
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公开(公告)号：KR101793225B1
公开(公告)日：2017-11-03
申请号：KR1020150081799
申请日：2015-06-10
Applicant: 한국과학기술연구원
IPC: H01L41/08 , H01L41/113 , H01L41/18
CPC classification number: H01L41/113
Abstract: 본발명은곡면기판의일면또는양면상에압전물질이구비되는구조를제시함과함께곡면기판과압전물질의두께및 탄성계수를제어하여중립면(neutral plane)의위치가곡면기판내부에위치되도록함으로써외부의기계적응력에대응한압전물질의전기적포텐셜(electrical potential)을최대화할수 있는곡면형압전장치에관한것으로서, 본발명에따른곡면형압전장치는곡면기판; 및상기곡면기판의일면또는양면상에구비된압전물질을포함하여이루어지며, 응력인가시압축응력과인장응력이균형을이루는중립면은곡면기판내부에위치하며, 상기중립면의위치는아래식 1의 y와 y에의해결정되며, 상기중립면의위치는, 곡면기판과압전물질각각의두께(d), 탄성계수(E)의조절에의해제어가능한것을특징으로한다. (식 1),(여기서,)(y은곡면기판의중심선과중립면사이의거리, y는압전물질의중심선과중립면사이의거리, d은곡면기판의두께, d는압전물질의두께, E은곡면기판의탄성계수, E는압전물질의탄성계수)
Abstract translation: 本发明控制表面的衬底，并用一个框呈现，其中设置在弯曲基板的一侧或两侧上的压电材料通过，以便被定位在所述中性面的内部位置gagokmyeon基板（中性平面）结构的压电材料的弹性的厚度和弹性模量 本发明涉及一种弯曲型压电器件，其能够使对应于外部机械自适应力的压电材料的电势最大化。 并且，在弯曲基板的一个或两个表面上设置压电材料，其中当施加应力时形成压缩应力和拉伸应力不平衡的中性面位于弯曲基板的内部， 并且通过调整弯曲基板和压电材料的每一个的厚度d和弹性模量E来控制中性面的位置。 Y是压电材料的中心线与中性面之间的距离，d是基板的厚度，d是压电材料的厚度， E是具有曲面的基板的弹性模量，E是压电材料的弹性模量）
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