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公开(公告)号：KR100345304B1
公开(公告)日：2002-07-25
申请号：KR1020000060004
申请日：2000-10-12
Applicant: 한국전자통신연구원
IPC: H01L21/205
Abstract: 본 발명은 고품질의 반도체박막인 Si, SiGe, SiGe:C와 같은 에피결정을 성장하는 수직형 초고진공 화학증착장치에 관한 것으로, 이를 위한 본 발명은 고진공하에서 에피택셜층 성장의 균일성을 유지하고 웨이퍼에서 전달되는 열전달을 최소화하는 이중구조의 석영관을 구비한 성장챔버; 상기 성장챔버의 하측에 연결되어, 에피택셜층 성장이 이루어지는 웨이퍼를 수직전송하는 수직이송장치를 포함하는 웨이퍼전송챔버; 상기 웨이퍼전송챔버의 하측에 구비되어 상기 웨이퍼를 수직전송시키는데 있어 웨이퍼전송챔버와의 압력 차이에 의해 전송기어에 응력이 가해지는 것을 방지하는 완충챔버; 및 상기 웨이퍼전송챔버의 일측에 연결되어 에피택셜층 성장시 외부로부터의 오염을 감소시키고 에피택셜층 성장이 완료된 웨이퍼를 수평이송시켜 외부로 배출하기 위한 로드락챔버를 포함하여 이루어진다.
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公开(公告)号：KR1020020012077A
公开(公告)日：2002-02-15
申请号：KR1020000045522
申请日：2000-08-05
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: PURPOSE: A method for manufacturing a hetero-junction bipolar transistor(HBT) is provided to reduce a modulation degree of a base, by uniformly controlling the flow of current injected to an emitter while precisely controlling the density in a very thin region. CONSTITUTION: A lower collector(2) and a collector Si epitaxial layer(3) are formed on a silicon substrate(1). An isolation layer is formed on the silicon substrate. A collector plug(6) and a selective implanted collector(SIC) region are formed in the active region of the silicon substrate. A mask insulation layer pattern wherein the SIC region is opened is formed on the resultant structure. A Si epitaxial layer is selectively grown by using the mask insulation layer pattern such that the Si epitaxial layer is partially and laterally over-grown on the mask insulation layer pattern. A SiGe base epitaxial layer(10) is grown on the resultant structure, and a plurality of second-dimensional doping layers are formed in the SiGe base epitaxial layer. The SiGe base epitaxial layer is patterned to define a base region. The emitter in contact with the SiGe base epitaxial layer is formed.
Abstract translation: 目的：提供一种用于制造异质结双极晶体管（HBT）的方法，通过均匀地控制注入发射极的电流流动，同时精确地控制非常薄的区域的密度，来降低基极的调制度。 构成：在硅衬底（1）上形成下集电体（2）和集电极Si外延层（3）。 在硅衬底上形成隔离层。 在硅衬底的有源区域中形成集电极插塞（6）和选择性注入集电极（SIC）区域。 在所得结构上形成其中SIC区域被打开的掩模绝缘层图案。 通过使用掩模绝缘层图案选择性地生长Si外延层，使得Si外延层在掩模绝缘层图案上部分和横向过度生长。 在所得结构上生长SiGe基极外延层（10），并且在SiGe基极外延层中形成多个第二维掺杂层。 将SiGe基底外延层图案化以限定基极区域。 形成与SiGe基极外延层接触的发射极。
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公开(公告)号：KR100270334B1
公开(公告)日：2000-12-01
申请号：KR1019970064080
申请日：1997-11-28
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: PURPOSE: An adaptor for an epitaxial apparatus is provided to prevent air pollution of a vacuum chamber, by repairing broken parts or exchanging raw materials induced to the vacuum chamber while maintaining the vacuum state of the vacuum chamber and eliminating the vacuum state in a local portion. CONSTITUTION: A switching unit induces and maintains vacuum, mounted in a flange of an inlet of a vacuum chamber. A bellows-type adaptor(13) extends and contracts to eliminate only local vacuum between the switching unit and a flange of a crucible. A flange is mounted in upper and lower portion of the bellow-type adaptor. One side of a guide bar(17) is fixed in an upper flange of the adaptor, and the other side of the guide bar penetrates a lower flange of the adaptor. A length control unit(16) is mounted in the guide bar penetrating the lower flange of the adaptor.
Abstract translation: 目的：提供一种用于外延设备的适配器，以通过在保持真空室的真空状态并且消除局部部分中的真空状态的同时修复破碎的部件或更换感应到真空室的原料来防止真空室的空气污染 。 构成：开关单元引导和维持真空，安装在真空室入口的法兰中。 波纹管式适配器（13）延伸和收缩，以消除开关单元和坩埚的凸缘之间的仅局部真空。 波纹管式适配器的上部和下部安装有法兰。 引导杆（17）的一侧固定在适配器的上凸缘中，导杆的另一侧穿过适配器的下凸缘。 长度控制单元（16）安装在引导杆中，穿过适配器的下凸缘。
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公开(公告)号：KR1020000020020A
公开(公告)日：2000-04-15
申请号：KR1019980038422
申请日：1998-09-17
Applicant: 한국전자통신연구원
IPC: H01L33/00 , H01L21/205
CPC classification number: H01L33/26 , B82Y20/00 , H01L33/005 , H01L33/06 , Y10S438/931 , Y10S438/954
Abstract: PURPOSE: An apparatus is provided to fabricate short wavelength photoelectric conversion devices, including an epitaxial layer of a mixed crystal compound of (SiC)x(AlN)1-x that has a uniform atomic structure and permits low-temperature deposition, is provided. CONSTITUTION: A PA-MOMBE(plasma-assisted metal organic molecular beam epitaxy) system is provided, which includes a chamber, a first plasma source cell, an ammonia source, and a second plasma source cell. The inner space of the chamber remains in a high vacuum state. The chamber is supplied with 1,3 disilanebutane, as a SiC source gas, from the first plasma source cell, and with nitrogen gas, as an AlN source gas, from the second plasma source cell. The chamber is also supplied with ammonia from the ammonia source cell. An organic aluminum is provided to the chamber, and reacts with the nitrogen gas or the ammonia to produce AlN.
Abstract translation: 目的：提供一种制造短波长光电转换装置的装置，其包括具有均匀原子结构并允许低温沉积的（SiC）x（AlN）1-x的混晶化合物的外延层。 构成：提供了一种PA-MOMBE（等离子体辅助金属有机分子束外延）系统，其包括室，第一等离子体源电池，氨源和第二等离子体源电池。 室的内部空间保持在高真空状态。 从第一等离子体源电池向室提供1,3-二硅烷丁烷作为SiC源气体，并从第二等离子体源电池供给作为AlN源气体的氮气。 该室还从氨源电池中提供氨。 向室内提供有机铝，并与氮气或氨反应产生AlN。
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Patent Agency Ranking
公开(公告)号：KR1019940011738B1
公开(公告)日：1994-12-23
申请号：KR1019910024262
申请日：1991-12-24
Applicant: 한국전자통신연구원
IPC: H01L21/28
Abstract: The method includes the steps of depositing and etching lower and upper insulating layers (2)(3) on a semi-insulating cpd. semiconductor substrate (1) to form an ohmic and left-off type opening part, forming a sulfur layer (4) to deposit lower and upper layers (5)(6) thereon, implanting Si ions to mix the semiconducting layer with the ohmic metal layer, and heat-treating to generate the activation of the impurities by the reaction between the metal and semiconductor, after depositing a surface passivation film (8).
Abstract translation: 该方法包括在半绝缘cpd上沉积和蚀刻下绝缘层（2）（3）的步骤。 半导体衬底（1）以形成欧姆和离开型开口部分，形成硫层（4）以沉积其上和下层（5）（6），注入Si离子以将半导体层与欧姆金属 层，并且在沉积表面钝化膜（8）之后通过金属和半导体之间的反应来热处理以产生杂质的活化。
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公开(公告)号：KR1019920004961B1
公开(公告)日：1992-06-22
申请号：KR1019880017987
申请日：1988-12-30
IPC: H01L21/00
CPC classification number: H05G2/003 , G03F7/70033
Abstract: The X-ray generation system for an ultra fine lithography includes a center electrode having an adjusting member, a peripheral electrode having gas flow holes and a metal disc having gas flow holes for generating the X-ray from a plasma. A large capacitor, a transparent cylinder, a discharge member, discharge and observing windows, a cylindrical insulator, exhaust holes, a metal container, large electric power spatial gap switches, a current returning wire are also provided. An exhaust pump, and gas feeding members continuously operate increasing stability, controlling, and discharging the quentity.
Abstract translation: 用于超细光刻的X射线产生系统包括具有调节构件的中心电极，具有气体流通孔的外围电极和具有用于从等离子体产生X射线的气体流通孔的金属盘。 还提供了大电容器，透明圆筒，放电构件，放电观察窗，圆柱形绝缘体，排气孔，金属容器，大电力空间间隙开关，回流电线。 排气泵和气体供给构件连续运行增加的稳定性，控制和排出量。
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公开(公告)号：KR1019920001912B1
公开(公告)日：1992-03-06
申请号：KR1019890011893
申请日：1989-08-21
Applicant: 한국전자통신연구원
Abstract: A method for manufacturing a semiconductor using an oxide film and a polyimide comprises (A) depositing and coating a first oxide film and a first polyimide layer on the first metal layer formed on the semiconductor substrate, (B) forming a metal layer joining hole into hollow space, (C) depositing a metal layer on the first oxid film nd polyimide layer, (D) depositing and coating a second oxide film and a second polyimide layer on the surfaces of metal layers, and (E) etching back up to the metal layer of the metal layer joining hole to form a second metal layer by filling up the joining hole with the etched metal layer.
Abstract translation: 使用氧化膜和聚酰亚胺制造半导体的方法包括：（A）在形成在半导体衬底上的第一金属层上沉积和涂覆第一氧化膜和第一聚酰亚胺层，（B）形成金属层接合孔 （C）在第一氧化膜nd聚酰亚胺层上沉积金属层，（D）在金属层的表面上沉积和涂覆第二氧化物膜和第二聚酰亚胺层，（E）回蚀刻到 金属层接合孔的金属层，以通过用蚀刻的金属层填充接合孔来形成第二金属层。
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