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公开(公告)号：KR1020110025334A
公开(公告)日：2011-03-10
申请号：KR1020090083346
申请日：2009-09-04
Applicant: 한국화학연구원
IPC: H01L21/208 , H01L21/324
CPC classification number: H01L21/02565 , H01L21/02628
Abstract: PURPOSE: A method for controlling crystallization for an oxide semiconductor for a solution process at a low temperature is provided to promote crystallization by controlling the thickness of a thin film. CONSTITUTION: A metal oxide precursor solution is coated on a substrate with the thickness of a thin film between 1 and 10 nm. The coated thin film is processed at a temperature of 200 to 350 degrees. The diluted solutions of the metal oxide precursor are made to control the thickness of the thin film between 1 and 10 nm by the coating of the metal oxide precursor solution. The diluted solutions of the metal oxide precursor include the metal oxide precursor of 0.01 to 0.09M.
Abstract translation: 目的：提供一种用于控制低温溶液处理的氧化物半导体结晶的方法，以通过控制薄膜的厚度来促进结晶。 构成：将金属氧化物前体溶液涂覆在基板上，薄膜的厚度在1至10nm之间。 涂覆的薄膜在200至350度的温度下进行处理。 金属氧化物前体的稀释溶液通过涂覆金属氧化物前体溶液来控制薄膜的厚度在1和10nm之间。 金属氧化物前体的稀释溶液包括0.01至0.09M的金属氧化物前体。
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62.发明公开
公开(公告)号：KR1020110024174A
公开(公告)日：2011-03-09
申请号：KR1020090082061
申请日：2009-09-01
Applicant: 한국화학연구원
CPC classification number: C01G3/006 , B82Y30/00 , B82Y40/00 , C01B19/002 , C01G15/006 , C01P2004/64 , H01L31/18
Abstract: PURPOSE: A method for manufacturing low temperature water-based copper-indium-gallium-selenium(CuIn_xGa_1-xSe_2) nano particles is provided to control the particle of the copper-indium-gallium-selenium in a nano scale by controlling the size of an intermediate complex. CONSTITUTION: A complex solution containing copper and indium is prepared by reacting a copper compound, an indium compound, and a polymer electrolyte represented by chemical formula 1. A selenium compound is introduced into the complex solution, and copper-indium-(gallium-)selenium nano particles are prepared at low temperature. In chemical formula 1, R1 represents C6 to C30 aryl group, C1 to C18 alkyl group, C2 to C18 alkenyl group, or C3 to C18 cycloalkyl group. R2 is selected from a group including carboxylic acid, sulfonate, sulfate, ester sulfate, and phosphate. M1 is selected from sodium, ammonium, potassium, and amine. n represents an integer of 1 to 1000, and m represents an integer of 1 to 1000.
Abstract translation: 目的：提供一种制造低温水性铜铟镓硒（CuIn_xGa_1-xSe_2）纳米颗粒的方法，通过控制纳米尺度的铜铟镓硒颗粒的尺寸 中间复合体。 构成：通过铜化合物，铟化合物和由化学式1表示的聚合物电解质的反应制备含有铜和铟的复合溶液。将硒化合物引入复合溶液中，并将铜铟 - （镓） 硒纳米颗粒在低温下制备。 在化学式1中，R 1表示C 6〜C 30芳基，C 1〜C 18烷基，C 2〜C 18烯基或C 3〜C 18环烷基。 R2选自羧酸，磺酸盐，硫酸盐，酯硫酸盐和磷酸盐。 M1选自钠，铵，钾和胺。 n表示1〜1000的整数，m表示1〜1000的整数。
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63.发明授权도파민 Ｄ3 및 Ｄ4 수용체의 선택적 활성을 지닌 신규4,5-디히드로이소옥사졸릴알킬피페라진 유도체와, 이의제조방법 失效도파민D3및D4체택적택적택적규규,5- ,5- ,5- ,5- ,5- ,5- ,5- ,5- ,5- ,5-규규규규규규규규규규규규규규규규규규규규
公开(公告)号：KR100394083B1
公开(公告)日：2003-08-06
申请号：KR1020000073122
申请日：2000-12-04
IPC: C07D413/14
CPC classification number: C07D413/04 , C07D261/08
Abstract: The present invention relates to 4,5-dihydroisoxazolylalkylpiperazine derivatives having selective biological activity at dopamine D3 and D4 receptors represented by the following Formula (1), and its preparation method through reductive amination reaction in the presence of reducing agent,wherein R1, R2, X and n are the same as defined in the specification.
Abstract translation: 本发明涉及对下式（1）所示的多巴胺D3和D4受体具有选择性生物活性的4,5-二氢异恶唑烷基哌嗪衍生物及其在还原剂存在下通过还原胺化反应的制备方法，其中R1，R2， X和n与说明书中定义的相同。
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公开(公告)号：KR102232199B1
公开(公告)日：2021-03-26
申请号：KR1020170165429
申请日：2017-12-04
Applicant: 한국화학연구원
Abstract: 본발명은화학적작용기를갖는고체기재상에형성된단일층그래핀을포함하는템플릿을이용한금속초박막의제조방법및 이에따라제조된금속초박막의용도에관한것이다.
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