公开(公告)号：JPH11243253A

公开(公告)日：1999-09-07

申请号：JP4345698

申请日：1998-02-25

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  MIYAJIMA TAKAO ,  TOMIOKA SATOSHI ,  AKIMOTO KATSUHIRO

IPC: C30B29/40 ,  H01L21/203 ,  H01L21/205 ,  H01L21/338 ,  H01L29/812 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To grow a good quality single-crystalline, nitride-based III-V semiconductor. SOLUTION: A layer of laminated substance is grown on a substrate by a molecular beam epitaxy process or the like, and then a nitride III-V compound semiconductor is grown on the laminated substance layer. As the substrate GaAs substrate 1 or an Si substrate is sued. Dangling bonds on the substrate are terminated beforehand preferably prior to the growth of the laminated substance layer. As the laminated substance a transition metal dichalcogenide such as MoS2 , graphite, mica, or the like is used. The nitride-based III-V compound semiconductor is used in the manufacture of semiconductor lasers, light- emitting diodes, field effect transistors(FET), etc.

公开(公告)号：JPH11126947A

公开(公告)日：1999-05-11

申请号：JP29303597

申请日：1997-10-24

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  MIYAJIMA TAKAO ,  OZAWA MASABUMI

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element in which the adhesion of electrodes can be improved. SOLUTION: An n-side contact layer 13, an n-type clad layer 14, an active layer 15, a p-type clad layer 16, and a p-side contact layer 17 which are respectively made of III nitride compound semiconductors are successively laminated upon a sapphire substrate 10. In addition, a P-side electrode 19 is formed on the p-side contact layer 17 through the opening 18a of an insulating film 18 and an electrode 20 for contact is formed on the p-side electrode 19 and insulating layer 18 so as to cover the entire surface of the electrode 19. The electrode 19 is composed of a metal containing Ni and the electrode 20 is composed of another metal containing Ti. An ohmic contact is secured by means of the electrode 19 and the adhesibility of the electrode 19 is reinforced by means of the electrode 20.

公开(公告)号：JPH1041254A

公开(公告)日：1998-02-13

申请号：JP21311796

申请日：1996-07-24

Applicant: SONY CORP

Inventor： MIYAJIMA TAKAO

IPC: H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40

Abstract: PROBLEM TO BE SOLVED: To stabilize a device for a long time by reducing the specific contact resistruaty and enhance the thermal stability. SOLUTION: An electrode layer 3 is formed on a p-type compd. semiconductor layer 1 made of a p-type GaN, etc., through a contact layer 2 formed by the MBE method so that the hole concn. is higher than that of the semiconductor layer 1. The electrode layer 3 is formed by laminating an Au- or other transition metallic (except Pt) layer 3a, Pt 3b and metal layer 3c and then annealing them. The Pt layer blocks Au from diffusing into the compd. semiconductor layer, and the transition metal layer adheres the Pt layer to the compd. semiconductor layer.

公开(公告)号：JPH1012624A

公开(公告)日：1998-01-16

申请号：JP18141796

申请日：1996-06-21

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  ASAZUMA YASUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/324 ,  H01L21/203 ,  H01L21/26 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a thermal processing method of a nitride compound semiconductor that ensures a p type nitride compound semiconductor having a higher carrier concentration compared with the prior art. SOLUTION: After a nitride compound semiconductor such as GaN where an acceptor impurity such as Mg is doped is grown by an organic metal chemical vapor growing method, in an atmosphere comprising inert gas such as nitrogen containing hydrocarbon that does not release nitrogen in a nitrogen release process the nitride compound semiconductor is thermally processed. For the nitrogen containing hydrocarbon, a material which contains a hydro group, an alkyl group and/or a phenyl group combined with nitrogen, having the number of the hydro groups being less than the sum of the number of the alkyl group and the number of the phenyl group for example, trimethylamine, is used.

公开(公告)号：JPH06310811A

公开(公告)日：1994-11-04

申请号：JP9783793

申请日：1993-04-23

Applicant: SONY CORP

Inventor： OZAWA MASABUMI ,  NAKAYAMA NORIKAZU ,  KOBAYASHI TOSHIMASA ,  MIYAJIMA TAKAO ,  NARUI FUMIYO

IPC: H01L33/04 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE:To make it possible to manufacture a target II-VI compound semiconductor element reliably and stably by a method wherein a treatment temperature accompanied by a heating in a process of manufacturing the II-VI compound semiconductor element is selected at a specified or lower temperature. CONSTITUTION:A first clad layer 2 consisting of a ZnMgSSe layer of the same conductivity type as that of a first conductivity type substrate 1, an active layer 3 consisting of an undoped or low-impurity concentration Zn(Cd)Se layer, a second clad layer 4 consisting of a second conductivity type ZnMgSSe layer and a cap layer 5 consisting of a superlattice structure, which consists of a thin ZnSe layer and a thin ZnTe layer, are epitaxially grown in order on the first conductivity type substrate 1, such as a GaAs substrate, by an MBE method. In this case, a heating treatment temperature accompanied by the manufacture of a laser is restricted to 400 deg.C or lower. The blue light laser obtained in such a way can be formed in prescribed characteristics stably and reliably.

公开(公告)号：JPH065920A

公开(公告)日：1994-01-14

申请号：JP18582192

申请日：1992-06-19

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  ITO SATORU ,  IRAKU YOSHINO ,  MIYAJIMA TAKAO ,  OZAWA MASABUMI ,  AKIMOTO KATSUHIRO

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01S5/347 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE:To improve the element characteristics by realizing ohmic contact of a p-side electrode for a light emitting element using a p-type ZnSe layer and thereby reducing the applied voltage required for operation. CONSTITUTION:In a ZnSe-based light emitting element having a p-n junction comprising an n-type ZnSe layer 2 and a p-type ZnSe layer 3, a p-type ZnTe layer 4 is provided on the p-type ZnSe layer 3, and an Au electrode 5 is provided as p-side electrode on the p-type ZnTe layer 4.

公开(公告)号：JPH04103122A

公开(公告)日：1992-04-06

申请号：JP22195890

申请日：1990-08-23

Applicant: SONY CORP

Inventor： AKIMOTO KATSUHIRO ,  IKEDA AKIO ,  MIYAJIMA TAKAO ,  OKUYAMA HIROYUKI

IPC: H01L21/28 ,  H01L33/28 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327

Abstract: PURPOSE:To accurately obtain ohmic contact with a P-type ZnSSe semiconductor in an excellent reproducible manner and highly reliable manner, and also in a high yield manner by a method wherein, before ohmic-contacting metal to a semiconductor, at least the ohmic-contacting part of the semiconductor with the metal is oxidation- treated beforehand. CONSTITUTION:When the Au or Au alloy metal, against the P-type impurity such as O, Li, N-doped ZnSxSe1-x, for example (provided that it is semiconductor 1 consisting of 0

公开(公告)号：JPH01248610A

公开(公告)日：1989-10-04

申请号：JP7783988

申请日：1988-03-30

Applicant: SONY CORP

Inventor： AKIMOTO KATSUHIRO ,  MIYAJIMA TAKAO ,  MORI YOSHIFUMI

IPC: H01L21/203 ,  H01L21/20 ,  H01L21/363 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34

Abstract: PURPOSE:To obtain a p-type zinc selenide by incorporating therein oxygen (O) as a dopant. CONSTITUTION:An n-type gallium arsenide (GaAs) substrate 2 is, for example, disposed in a molecular beam epitaxie (MBE) device 1. The substrate 2 is irradiated with Zn, Se and ZnO molecular beams generated from Knudsen cells C1-C3 for forming deposition sources of the Zn, Se and ZnO thereby to form an O- doped ZnSe epitaxial film 3 on the substrate 2. Thus, the film 3 which has been difficult to be obtained heretofore can be provided.

公开(公告)号：JPH01196838A

公开(公告)日：1989-08-08

申请号：JP2253488

申请日：1988-02-02

Applicant: SONY CORP

Inventor： AKIMOTO KATSUHIRO ,  MIYAJIMA TAKAO

IPC: H01L21/265 ,  H01L21/326 ,  H01L21/36 ,  H01L21/479 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01L33/40

Abstract: PURPOSE:To reduce point defect density in a semiconductor epitaxial layer by ion-implanting an impurity to the layer, and then heat-treating the layer in a state that a potential gradient is formed in the thicknesswise direction of the layer. CONSTITUTION:Two ZnSe epitaxial layers 2 implanted with an impurity are superposed in close contact with the surfaces of the layers 2 on a GaAs substrate 1. A voltage E is applied between electrodes 3 formed on the substrate 1. A potential gradient, i.e., an electric field is presented in the thicknesswise direction of the layer 2. After it is heat-treated in a state that a voltage E is applied between the electrodes 3 of the substrate 1 for a predetermined period of time, the substrate 1 is cooled to room temperature in a state that the voltage E is being applied. The implanted impurity is activated at the time of heat treating, carrier is moved from the layer 2, and the carrier density in the layer 2 is reduced at the time of heat treating. Thus, the point defect density in the layer 2 is reduced.