公开(公告)号：JP5923617B2

公开(公告)日：2016-05-24

申请号：JP2014540951

申请日：2012-11-09

Applicant: ユー エレクトロニクス シーオー. エルティディ.

Inventor： ハン ヨン フィ ,  キム ヒョン ウォン ,  アン ミ ソク

IPC: B81C3/00 ,  H01L21/60 ,  H01L23/02 ,  G01J1/02 ,  G01J1/04 ,  B81B7/02

CPC classification number: B81B7/0038 ,  B81B7/007 ,  B81C1/00269 ,  B81C1/00285 ,  G01P15/0802 ,  H01L31/02016 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/096 ,  B81C2203/0118 ,  H01L2224/291

公开(公告)号：JP2015517919A

公开(公告)日：2015-06-25

申请号：JP2014559988

申请日：2013-02-27

Applicant: 日本テキサス・インスツルメンツ株式会社 ,  テキサス インスツルメンツ インコーポレイテッド ,  テキサス インスツルメンツ インコーポレイテッド

Inventor： ディー マナック クリストファー ,  ディー マナック クリストファー ,  ステップニアク フランク ,  ステップニアク フランク ,  ケイ コドゥリ スリーニーバサン ,  ケイ コドゥリ スリーニーバサン

IPC: B81B7/02 ,  B81C3/00 ,  G01J1/02 ,  G01J5/02 ,  H01L35/32

CPC classification number: B81C1/00246 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C1/00269 ,  G01J5/045 ,  G01J5/12 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24245 ,  H01L2224/32245 ,  H01L2224/82039 ,  H01L2224/92144 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82

Abstract: 埋め込みマイクロエレクトロメカニカルシステム(MEMS)(100)が、絶縁性ボード(120)に埋め込まれる半導体チップ(101)を含み、このチップは、放射センサMEMS(105)を含むキャビティ(102)を有し、チップ表面におけるキャビティの開口(104)が、MEMSにより感知される放射(150)に透過性があるプレート(110)により覆われる。キャビティから離れたプレート表面が、キャビティにおいてMEMSより感知される放射に晒されるべき露出した中央エリア、及びプレート表面に接する金属フィルム(111)と金属フィルム上にスタックされた接着剤の層(112)とにより覆われた周辺エリアを有する。

Abstract translation: 嵌入式微机电系统（MEMS）（100）包括嵌入在所述绝缘性基板（120）的半导体芯片（101），该芯片具有一个空腔（102），其包括辐射传感器MEMS（105）， 在芯片表面（104）腔开口由板（110），其是可渗透的由MEMS（0.99）感测到的辐射覆盖。 从在所述腔与所述板表面（111）上的金属膜接触的空腔，该空腔被堆叠暴露应暴露于辐射以从MEMS感测的中心区域的粘合剂层，和金属膜板表面远程（112） 由覆盖的外围区域。

公开(公告)号：US20170355596A1

公开(公告)日：2017-12-14

申请号：US15669916

申请日：2017-08-05

Applicant: Versana Micro Inc

Inventor： BISHNU PRASANNA GOGOI

IPC: B81B7/02 ,  H01L27/14 ,  H01L41/113 ,  H01L27/22 ,  H05K7/02 ,  H01L27/16

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor,and a biological sensor.

公开(公告)号：US20170129775A1

公开(公告)日：2017-05-11

申请号：US15416206

申请日：2017-01-26

Applicant: Raytheon Company

Inventor： Buu Q. Diep ,  Adam M. Kennedy ,  Thomas Allan Kocian ,  Mark Lamb

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0058 ,  B81B7/0041 ,  B81B2201/0207 ,  B81B2201/04 ,  B81C1/00269 ,  B81C1/00317 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145 ,  B81C2203/019

Abstract: A microelectromechanical systems (MEMS) package includes a substrate extending between a first pair of outer edges to define a length and a second pair of outer edges to define a width. A seal ring assembly is disposed on the substrate and includes at least one seal ring creating a first boundary point adjacent to at least one MEMS device and a second boundary point adjacent at least one of the outer edges. The package further includes a window lid on the seal ring assembly to define a seal gap containing the at least one MEMS device. The seal ring assembly anchors the window lid to the substrate at the second boundary point such that deflection of the window lid into the seal gap is reduced.

公开(公告)号：US09346669B2

公开(公告)日：2016-05-24

申请号：US14719187

申请日：2015-05-21

Applicant: Newport Fab

Inventor： David J. Howard ,  Michael J. DeBar ,  Jeff Rose ,  Arjun Kar-Roy

IPC: H01L23/482 ,  B81C1/00 ,  B81B7/00 ,  H01L21/768 ,  B81B3/00 ,  H01L29/417 ,  H01L21/4763

CPC classification number: B81C1/00095 ,  B81B3/007 ,  B81B7/0006 ,  B81B2201/0207 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C1/00166 ,  B81C1/00658 ,  H01L21/47635 ,  H01L21/76883 ,  H01L29/0676 ,  H01L29/417

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

Abstract translation: 公开了自支撑MEMS结构及其形成方法。 一种示例性方法包括在衬底上方的MEMS板上形成聚合物层，在聚合物层上形成沿沟槽第一部分的侧壁的通孔环，以及在聚合物层内形成沟槽的第二部分。 该方法还包括在通孔环的沟槽衬里和沟槽的第二部分的侧壁的沟槽衬里中形成氧化物衬垫，在沟槽中沉积金属填料以形成通孔，并在通孔环上形成金属盖层， 金属填料。 该方法还包括去除金属盖层的一部分以形成通孔盖，以及去除聚合物层，使得通孔仅由基底在其底部支撑。 还公开了通过公开的方法形成的示例性结构。

公开(公告)号：US09321631B2

公开(公告)日：2016-04-26

申请号：US14490924

申请日：2014-09-19

Applicant: Texas Instruments Incorporated

Inventor： Christopher Daniel Manack ,  Frank Stepniak ,  Sreenivasan K. Koduri

IPC: B81C1/00 ,  B81B7/00 ,  G01J5/12 ,  G01J5/04 ,  H01L23/00

CPC classification number: B81C1/00246 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C1/00269 ,  G01J5/045 ,  G01J5/12 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24245 ,  H01L2224/32245 ,  H01L2224/82039 ,  H01L2224/92144 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82

Abstract: A method for fabricating a micro-electro-mechanical system (MEMS) provides a semiconductor chip having a cavity with a radiation sensor MEMS. The opening of the cavity at the chip surface is covered by a plate transmissive to the radiation sensed by the MEMS. A patterned metal film is placed across the plate surface remote from the cavity.

Abstract translation: 微机电系统（MEMS）的制造方法提供具有辐射传感器MEMS的空腔的半导体芯片。 在芯片表面处的空腔的开口由对MEMS感测的辐射透射的板覆盖。 图案化的金属膜跨过位于空腔的板表面。

公开(公告)号：US20160052776A1

公开(公告)日：2016-02-25

申请号：US14885255

申请日：2015-10-16

Applicant: Infineon Technologies AG

Inventor： Stefan Kolb ,  Andreas Meiser ,  Till Schloesser ,  Wolfgang Werner

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B3/0086 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C1/0015 ,  G01H1/00 ,  G01H11/06 ,  G01L9/0072 ,  G01L9/12 ,  G01N27/223 ,  G01P15/125

Abstract: A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers.

Abstract translation: MEMS器件包括固定电极和可移动​​电极，与固定电极隔离并间隔一定距离。 可移动电极通过一个或多个包括绝缘材料的间隔件悬置在固定电极上，其中可动电极横向地固定到一个或多个间隔件上。

公开(公告)号：US09227839B2

公开(公告)日：2016-01-05

申请号：US14270945

申请日：2014-05-06

Applicant: Raytheon Company

Inventor： Roland W. Gooch ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy ,  Buu Q. Diep

IPC: H01L23/02 ,  B81B7/00 ,  H01L37/00

CPC classification number: B81B7/0067 ,  B81B7/0035 ,  B81B2201/0207 ,  B81C1/00317 ,  G01J5/045 ,  G01J5/08 ,  G01J5/20 ,  H01L37/00

Abstract: A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer.

Abstract translation: 一种用于检测具有预定波长的电磁辐射的结构。 该结构包括具有传感元件的器件晶片，其响应于电磁辐射而设置在器件晶片的表面的预定区域上。 提供了覆盖晶片，其具有对电磁辐射透明的区域，以将电磁辐射穿过透明区域传递到感测元件的表面上。 提供了一种键间隔结构，用于当覆盖晶片接合到器件晶片时，从盖晶片的透明区域的相对表面支撑感测元件的表面，该距离小于预定波长的一小部分。

公开(公告)号：US20150368094A1

公开(公告)日：2015-12-24

申请号：US14719187

申请日：2015-05-21

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Michael J. DeBar ,  Jeff Rose ,  Arjun Kar-Roy

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00095 ,  B81B3/007 ,  B81B7/0006 ,  B81B2201/0207 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C1/00166 ,  B81C1/00658 ,  H01L21/47635 ,  H01L21/76883 ,  H01L29/0676 ,  H01L29/417

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

Abstract translation: 公开了自支撑MEMS结构及其形成方法。 一种示例性方法包括在衬底上方的MEMS板上形成聚合物层，在聚合物层上形成沿沟槽第一部分的侧壁的通孔环，以及在聚合物层内形成沟槽的第二部分。 该方法还包括在通孔环的沟槽衬里和沟槽的第二部分的侧壁的沟槽衬里中形成氧化物衬垫，在沟槽中沉积金属填料以形成通孔，并在通孔环上形成金属盖层， 金属填料。 该方法还包括去除金属盖层的一部分以形成通孔盖，以及去除聚合物层，使得通孔仅由基底在其底部支撑。 还公开了通过公开的方法形成的示例性结构。

公开(公告)号：US09217755B2

公开(公告)日：2015-12-22

申请号：US13397318

申请日：2012-02-15

Applicant: Brian Lee Wardle ,  Fabio Ferruccio Fachin ,  Stefan Nikles ,  Mathew Varghese

Inventor： Brian Lee Wardle ,  Fabio Ferruccio Fachin ,  Stefan Nikles ,  Mathew Varghese

IPC: H01L21/00 ,  G01P15/00 ,  B81C1/00 ,  G01P15/08

CPC classification number: B81C1/00007 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81C1/00142 ,  B81C1/00158 ,  B81C1/0019 ,  G01P15/00 ,  G01P15/008 ,  G01P15/0802 ,  Y10T29/49117 ,  Y10T29/49155

Abstract: The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1×, 5×, 10×, 100× or 500× the film's thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.

Abstract translation: 本发明一般涉及用于形成三维MEMS的方法和装置。 更具体地说，本公开涉及一种控制微结构装置中的平面外屈曲的方法，以便产生具有1×，5×，10×，100×或500× 膜的厚度或晶片表面之上。 根据所公开的原理形成的示例性装置包括具有在晶片表面上方和下方延伸的微桥的三维加速度计。