公开(公告)号：EP2019080B1

公开(公告)日：2013-09-11

申请号：EP08160899.4

申请日：2008-07-22

Applicant: Teledyne Dalsa Semiconductor Inc.

Inventor： Fortin, Vincent ,  Quellet, Luc

IPC: B81C1/00 ,  C23C16/24 ,  C23C16/56

CPC classification number: B81C1/00666 ,  B81C2201/017 ,  C23C16/24 ,  C23C16/56

公开(公告)号：EP2019080A2

公开(公告)日：2009-01-28

申请号：EP08160899.4

申请日：2008-07-22

Applicant: Dalsa Semiconductor Inc.

Inventor： Fortin, Vincent ,  Quellet, Luc

IPC: B81C1/00

CPC classification number: B81C1/00666 ,  B81C2201/017 ,  C23C16/24 ,  C23C16/56

Abstract: A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.

Abstract translation: 在MEMS或NEMS器件中通常为硅的结构膜通过在除了氮气之外的气体的存在下沉积膜，并且优选地作为载气来制造。

公开(公告)号：EP1184335B1

公开(公告)日：2006-02-01

申请号：EP01117577.5

申请日：2001-07-20

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Bruchhaus, Rainer, Dr. ,  Kolb, Stefan ,  Pitzer, Dana ,  Primig, Robert ,  Schreiter, Matthias ,  Winkler, Bernhard

IPC: B81B3/00

CPC classification number: B81C1/00246 ,  B81B7/0006 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/07 ,  B81B2207/092 ,  B81B2207/097 ,  B81C2201/0109 ,  B81C2201/0163 ,  B81C2201/017 ,  B81C2203/0778

公开(公告)号：EP0939973B1

公开(公告)日：2005-07-20

申请号：EP97949945.6

申请日：1997-11-18

Applicant: Infineon Technologies AG

Inventor： SCHEITER, Thomas ,  HIEROLD, Christopher ,  NÄHER, Ulrich

IPC: H01L21/314 ,  G01L9/00

CPC classification number: B81C1/00666 ,  B81B2203/0127 ,  B81C2201/017 ,  G01L9/0042 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/3185

Abstract: In a process for manufacturing a micromechanical component, a 5 nm to 50 nm thick oxide or nitride layer is deposited as a protective layer (6) on a functional element (4) made of polysilicon by LPCVD (low pressure chemical vapour deposition).

公开(公告)号：EP1263056A2

公开(公告)日：2002-12-04

申请号：EP02077978.1

申请日：1998-03-26

Applicant: Interuniversitair Micro-Elektronica Centrum

Inventor： Fiorini, Paolo ,  Sedky, Sherif ,  Caymax, Matty ,  Baert, Christiaan

IPC: H01L31/18

CPC classification number: B81C1/00666 ,  B81C2201/017 ,  G01J5/20 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate by varying the deposition pressure.

Abstract translation: 控制通过改变沉积压力沉积在基底的多晶SiGe层的应力的方法。

公开(公告)号：EP0389198A2

公开(公告)日：1990-09-26

申请号：EP90302859.5

申请日：1990-03-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hori, Masaru, c/o Intellectual Property Division ,  Itoh, Masamitsu c/o Intellectual Property Division

IPC: G03F1/14

CPC classification number: G03F1/22 ,  B81C1/00666 ,  B81C2201/017

Abstract: An X-ray mask can be manufactured by forming an X-ray transmitting thin film (12) on a mask support (11), forming an X-ray absorber thin film (14) on the X-ray transmitting thin film (12), and patterning the X-ray absorber thin film (14) with a desired pattern to form an X-ray absorber pattern. Prior to the pattern­ing, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film (14).

Abstract translation: X射线掩模可通过X射线的形成在掩模上支承件（11）发射的薄膜（12），形成在X射线吸收体的薄膜（14）上的X射线透射薄膜来制造（12） ，并与所期望的图案以形成X射线吸收器图案构图该X射线吸收体的薄膜（14）。 在此之前的构图，与原子序数比氖的更大的至少一种惰性元素的离子注入在X射线吸收体的薄膜（14）。

公开(公告)号：EP2121510B1

公开(公告)日：2016-04-06

申请号：EP07859371.2

申请日：2007-12-10

Applicant: NXP B.V.

Inventor： STEENEKEN, Peter G.

IPC: B81B3/00 ,  H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/0056 ,  B81B2201/016 ,  B81C2201/017 ,  Y10T29/49105

公开(公告)号：EP2443058A1

公开(公告)日：2012-04-25

申请号：EP10723626.7

申请日：2010-06-17

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： CONSTANCIAS, Christophe ,  DALZOTTO, Bernard ,  FOURNEL, Frank ,  MICHALLON, Philippe ,  MORICEAU, Hubert ,  POUTEAU, Valérie

IPC: B81C1/00 ,  G01L9/00

CPC classification number: B81C1/00158 ,  B81B2201/0264 ,  B81B2201/047 ,  B81C2201/017

Abstract: The invention relates to a method for determining a minimum tension compensation stress for a membrane with a thickness no higher than one micron, secured to a frame having, in the absence of external stress, a desired deflection, in which: a°) the length, width and thickness of the membrane are selected, as well as the material and a residual stress thereof; b°) the weight of the membrane is calculated; c°) β, C and C* are calculated using suitable software; d°) the calculated deflection h is deduced; e°) the deflection is compared with the desired deflection; f°) if said calculated deflection is greater than the desired deflection, the residual stress is adjusted so that the calculated deflection is no higher than the desired deflection; g°) when the calculated deflection is no higher than the desired deflection, the minimum tension compensation stress is calculated.

公开(公告)号：EP2121510A2

公开(公告)日：2009-11-25

申请号：EP07859371.2

申请日：2007-12-10

Applicant: NXP B.V.

Inventor： STEENEKEN, Peter G.

IPC: B81B3/00 ,  H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/0056 ,  B81B2201/016 ,  B81C2201/017 ,  Y10T29/49105

Abstract: The present invention relates to MEMS device that comprises a first electrode, and a second electrode suspended with a distance to the first electrode with the aid of a suspension structure. The MEMS device further comprises at least one deformation electrode. The second electrode or the suspension structure or both are plastically deformable upon application of an electrostatic deformation force via the deformation electrode. This way, variations in the off- state position of the second electrode that occur during fabrication of different devices or during operation of a single device can be eliminated.

公开(公告)号：EP1712515A2

公开(公告)日：2006-10-18

申请号：EP06075741.6

申请日：2006-03-30

Applicant: Delphi Technologies, Inc.

Inventor： Chilcott, Dan W.

IPC: B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0135 ,  B81C2201/014 ,  B81C2201/017

Abstract: A technique (400) for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer (404), with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees (406), with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer (408).

Abstract translation: 用于制造微机电结构的技术（400）包括多个步骤。 最初，空腔形成处理晶片（404）的第一侧，空腔的侧壁在空腔的开口处相对于处理晶片的第一侧形成大于约54.7度的第一角度。 然后，在处理晶片的第一侧上执行体蚀刻，以将腔的侧壁相对于处理晶片的开口处的第一侧相对于第二角度大于约90度（406） 腔。 接下来，将第二晶片的第二面接合到处理晶片（408）的第一侧。