中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

292 records (took 0.024 seconds)

    METHOD FOR MANUFACTURING THERMAL BIMORPH DIAPHRAGM AND MEMS SPEAKER WITH THERMAL BIMORPHS
    61.
    发明申请
    METHOD FOR MANUFACTURING THERMAL BIMORPH DIAPHRAGM AND MEMS SPEAKER WITH THERMAL BIMORPHS 审中-公开
    用热二极管制造热二极管膜和MEMS扬声器的方法

    公开(公告)号：WO2016029357A1

    公开(公告)日：2016-03-03

    申请号：PCT/CN2014/085204

    申请日：2014-08-26

    Applicant: GOERTEK INC.

    Inventor： ZOU, Quanbo ,  WANG, Zhe ,  TAO, Jifang ,  QIU, Guanxun

    IPC: H04R31/00 ,  H04R7/00 ,  H04R7/06 ,  H04R9/06

    CPC classification number: H04R19/02 ,  B81B7/008 ,  B81B2201/0257 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/0197 ,  H04R7/06 ,  H04R19/013 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/025 ,  H04R2307/027

    Abstract: Providing a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate (1) to obtain an insulating layer (2) thereon and providing a metal layer (3) on the insulating layer (2); providing a sacrificial layer (4) on the metal layer (3); providing a first thermal bimorph layer (5) on the sacrificial layer (4); providing a second thermal bimorph layer (6) on the first thermal bimorph layer (5); providing a metal connecting layer (7) at the positions on the metal layer (3) where the sacrificial layer (4) is not provided; forming corresponding back holes (16) on the substrate (1) and the insulating layer (2) and releasing the sacrificial layer (4); forming a warped thermal bimorph diaphragm with the first thermal bimorph layer (5) and the second thermal bimorph layer (6) after the sacrificial layer (4) is released. With the MEMS speaker with thermal bimorphs, the problems of high production cost, complicated wafer process and limitations on sound performance improvements are solved.

    Abstract translation: 提供用于制造具有热双压电晶片的热双压电晶片和MEMS扬声器的方法，其中该方法包括以下步骤：对衬底（1）进行热氧化以在其上获得绝缘层（2）并在其上提供金属层（3） 绝缘层（2）; 在所述金属层（3）上提供牺牲层（4）; 在所述牺牲层（4）上提供第一热双压电晶片（5）; 在所述第一热双压电晶片层（5）上提供第二热双压电晶片（6）。 在不设置牺牲层（4）的金属层（3）上的位置设置金属连接层（7） 在基板（1）和绝缘层（2）上形成对应的后孔（16）并释放牺牲层（4）; 在所述牺牲层（4）被释放之后，与所述第一热双压电晶片（5）和所述第二热双压电晶片层（6）形成翘曲的热双压电晶片。 使用具有热双压电晶片的MEMS扬声器，解决了高生产成本，复杂的晶片工艺和声音性能改进的限制的问题。

    PROCESS FOR FORMING GRAPHENE LAYERS ON SILICON CARBIDE
    62.
    发明申请
    PROCESS FOR FORMING GRAPHENE LAYERS ON SILICON CARBIDE 审中-公开
    在碳化硅上形成石墨层的方法

    公开(公告)号：WO2015035465A1

    公开(公告)日：2015-03-19

    申请号：PCT/AU2014/050218

    申请日：2014-09-08

    Applicant: GRIFFITH UNIVERSITY

    Inventor： IACOPI, Francesca ,  AHMED, Mohsin ,  CUNNING, Benjamin, Vaughan

    IPC: C01B31/00 ,  C01B31/04 ,  C30B1/00 ,  C30B1/02 ,  B32B9/00

    CPC classification number: C30B1/026 ,  B81C1/0038 ,  B81C2201/0197 ,  C01B32/184 ,  C01B32/188 ,  C30B1/10 ,  C30B29/02 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02614

    Abstract: A process for forming graphene, including : depositing at least two metals onto a surface of silicon carbide (SiC), the at least two metals including at least one first metal and at least one second metal; and heating the SiC and the first and second metals under conditions that cause the at least one first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide, and the corresponding solubilities of the carbon in the at least one stable silicide and in the at least one second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

    Abstract translation: 一种用于形成石墨烯的方法，包括：将至少两种金属沉积到碳化硅（SiC）的表面上，所述至少两种金属包括至少一种第一金属和至少一种第二金属; 以及在导致所述至少一种第一金属与所述碳化硅的硅反应以形成碳和至少一种稳定的硅化物的条件下加热所述SiC和所述第一和第二金属，以及所述碳在所述至少一种中的相应溶解度 稳定的硅化物和至少一个第二金属足够低，使得由硅化物反应产生的碳在SiC上形成石墨烯层。

    METHODS OF AND APPARATUS FOR MOLDING STRUCTURES USING SACRIFICIAL METAL PATTERNS
    64.
    发明申请
    METHODS OF AND APPARATUS FOR MOLDING STRUCTURES USING SACRIFICIAL METAL PATTERNS 审中-公开
    使用极限金属图案模制结构的方法和装置

    公开(公告)号：WO03095708A2

    公开(公告)日：2003-11-20

    申请号：PCT/US0314662

    申请日：2003-05-07

    Applicant: MEMGEN CORP

    Inventor： BANG CHRISTOPHER A

    IPC: B81B3/00 ,  B81C1/00 ,  C25D1/10 ,  C25D5/02 ,  G01P15/08 ,  G01P15/125 ,  C25D1/00

    CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

    Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFAB formation process), and typically contain features having resolutions within the 1 to 100 µm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and iohardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

    Abstract translation: 提供了模制结构，制造模制结构的方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其它模具部件组合，并将模塑材料注入模具中并进行硬化。 层压结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

    METHODS OF AND APPARATUS FOR MAKING HIGH ASPECT RATIO MICROELECTROMECHANICAL STRUCTURES
    65.
    发明申请
    METHODS OF AND APPARATUS FOR MAKING HIGH ASPECT RATIO MICROELECTROMECHANICAL STRUCTURES 审中-公开
    制备高比例微电子结构的方法与装置

    公开(公告)号：WO2003071008A2

    公开(公告)日：2003-08-28

    申请号：PCT/US2002/033249

    申请日：2002-10-15

    Applicant: UNIVERSITY OF SOUTHERN CALIFORNIA

    Inventor： COHEN, Adam, L.

    IPC: C25D5/02

    CPC classification number: B81C1/0038 ,  B33Y10/00 ,  B81C1/00619 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D7/12 ,  C25D17/02 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/76885 ,  H05K3/241

    Abstract: Various embodiments of the invention present techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion (ELEX TM ) process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the ELEX TM process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of EFAB TM .

    Abstract translation: 本发明的各种实施例提出了通过电化学挤出（ELEXTM）方法形成结构（例如HARMS型结构）的技术。 优选的实施方案通过沉积通过无阳极适应的接触掩模进行挤出过程，其最初被压在基底上，然后随着沉积增厚逐渐拉开或分离。 沉积图案可以通过在掩模和衬底元件之间包括更复杂的相对运动而在沉积过程中变化。 这种复杂运动可以包括旋转分量或具有不与分离轴平行的分量的平移运动。 可以通过将ELEXTM工艺与EFABTM的选择性沉积，覆盖沉积，平坦化，蚀刻和多层操作组合来形成更复杂的结构。

Patent Agency Ranking