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    FIELD EMITTER AND METHOD FOR PRODUCING THE SAME
    65.
    发明申请
    FIELD EMITTER AND METHOD FOR PRODUCING THE SAME 审中-公开
    现场发射器及其制造方法

    公开(公告)号：WO99044215A1

    公开(公告)日：1999-09-02

    申请号：PCT/RU1998/000056

    申请日：1998-02-27

    IPC: H01J1/304 ,  H01J1/30 ,  H01J9/12 ,  H01J19/24

    CPC classification number: H01J1/304 ,  H01J2201/30403 ,  H01J2201/30457

    Abstract: The present invention pertains to the field of vacuum electronics and more precisely relates to a field emitter intended for use as an electron source (cathode) in vacuum electronic devices for various purposes such as cathodic luminescent light sources, light-emitting indicators and flat displays for the optical representation of information. The field emitter of the present invention consists in a carbon film whose main portion is made of graphite clusters having their basic crystallographic planes preferably oriented so as to be perpendicular to the plane of the substrate on which said film is located. This emitter exhibits improved emission parameters that enable its use for the above-mentioned purposes. The method for producing this emitter comprises previously applying diamond crystallites on an electro-conductive substrate and depositing graphite clusters on said crystallites in order to obtain a monolithic film. The parameters of the deposition process are selected so that the crystallographic basic planes in the graphite clusters are preferably oriented in a direction perpendicular to the surface of the substrate. These parameters are also selected in order to provide for a modification in the electronic configuration of the carbon atoms in the thin boundary layer so as to reduce the work function of the electrons.

    Abstract translation: 本发明涉及真空电子领域，更确切地说，涉及一种用于各种用途的真空电子设备中的电子源（阴极）的场致发射体，例如阴极发光光源，发光指示器和平板显示器 信息的光学表示。 本发明的场致发射体由碳膜构成，其主要部分由具有基本结晶面的石墨簇制成，其优选取向为垂直于所述薄膜所在基板的平面。 该发射器表现出改善的发射参数，使其能够用于上述目的。 制造该发射体的方法包括事先在金属导电基底上施加金刚石微晶并将石墨簇沉积在所述微晶上以获得单片薄膜。 选择沉积工艺的参数，使得石墨簇中的晶体基本平面优选地在垂直于衬底表面的方向上取向。 还选择这些参数以便提供薄边界层中的碳原子的电子构型的修改，以便降低电子的功函数。

    ION-BOMBARDED GRAPHITE ELECTRON EMITTERS
    66.
    发明申请
    ION-BOMBARDED GRAPHITE ELECTRON EMITTERS 审中-公开
    离子石墨电子发射体

    公开(公告)号：WO99031700A1

    公开(公告)日：1999-06-24

    申请号：PCT/US1998/026016

    申请日：1998-12-08

    IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

    CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30403

    Abstract: Patterned ion-bombarded graphite electron emitters are disclosed as well as processes for producing them. The electron emitters are produced by forming a layer of composite of graphite particles and glass on a substrate then bombarding the composite with an ion beam. The electron emitters are useful in field emitter cathode assemblies which are fabricated into flat panel displays.

    Abstract translation: 公开了图案化的离子轰击的石墨电子发射体以及它们的制造方法。 通过在衬底上形成石墨颗粒和玻璃的复合材料层，然后用离子束轰击复合材料来制造电子发射体。 电子发射器在制造成平板显示器的场发射极阴极组件中是有用的。

    FABRICATION AND STRUCTURE OF ELECTRON-EMITTING DEVICES HAVING HIGH EMITTER PACKING DENSITY
    67.
    发明申请
    FABRICATION AND STRUCTURE OF ELECTRON-EMITTING DEVICES HAVING HIGH EMITTER PACKING DENSITY 审中-公开
    具有高发射体包装密度的电子发射装置的制造和结构

    公开(公告)号：WO1995007543A1

    公开(公告)日：1995-03-16

    申请号：PCT/US1994009762

    申请日：1994-09-08

    Applicant: SILICON VIDEO CORPORATION

    Inventor： SILICON VIDEO CORPORATION ,  MACAULAY, John, M. ,  SPINDT, Christopher, J. ,  SEARSON, Peter, C. ,  DUBOC, Robert, M., Jr.

    IPC: H01J09/02

    CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: Electron-emissive elements in area electron emitters suitable for flat-panel displays are fabricated at high packing density. The electron-emissive elements have various shapes such as filaments (30A, 30B, or 30/88D1), cones (1181 or 142D), and cone-topped pedestals (92/1021). A typical emitter contains a substrate (20) that provides structural support. A patterned lower non-insulating region (22) formed with parallel lines is provided over insulating material of the substrate. Electron-emissive filaments (30A, 30B, or 30/88D1) are formed in pores (281) extending through an insulating layer (24) furnished over the lower non-insulating region. A patterned non-insulating gate layer (34B, 40B, or 46B) is typically provided over the insulating layer to form a gated device. Charged-particle tracks (261 or 50A1/50B1) are preferably employed to define locations for electron-emissive features. Usage of charged-particle tracks enables the electron-emissive features to be quite small and spaced closely together.

    Abstract translation: 适用于平板显示器的面积电子发射体中的电子发射元件以高填充密度制造。 电子发射元件具有各种形状，例如细丝（30A，30B或30 / 88D1），锥体（1181或142D）和圆锥顶座（92/1021）。 典型的发射器包含提供结构支撑的衬底（20）。 在基板的绝缘材料上设置形成有平行线的图案化的下部非绝缘区域（22）。 电子发射丝（30A，30B或30 / 88D1）形成在延伸穿过下部非绝缘区域上的绝缘层（24）的孔（281）中。 通常在绝缘层上设置图案化非绝缘栅极层（34B，40B或46B）以形成门控器件。 电荷粒子轨迹（261或50A1 / 50B1）优选用于限定电子发射特征的位置。 带电粒子轨迹的使用使得电子发射特征相当小并且间隔得很紧密。

    Method of fabricating composite field emission source
    68.
    发明授权
    Method of fabricating composite field emission source 有权
    复合场致发射源的制作方法

    公开(公告)号：US09005407B2

    公开(公告)日：2015-04-14

    申请号：US13317955

    申请日：2011-10-31

    Applicant: Jian-Min Jeng ,  Jyi-Tsong Lo ,  Wen-Ching Shih ,  Wei-Lung Tasi

    Inventor： Jian-Min Jeng ,  Jyi-Tsong Lo ,  Wen-Ching Shih ,  Wei-Lung Tasi

    IPC: C23C16/26 ,  H01J9/02 ,  C23C16/455 ,  H01J1/304

    CPC classification number: H01J9/025 ,  C23C16/26 ,  C23C16/45523 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30461

    Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-shaped structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-shaped structures on the petal-shaped structure. Therefore, the composite field emission source with high strength and nano coral-shaped structures can be obtained, whereby improving the effect and life of electric field emission.

    Abstract translation: 提供了一种制造复合场致发射源的方法。 通过使用RF磁控溅射进行成膜处理的第一阶段，以在纳米结构膜为由多个纳米石墨壁构成的花瓣状结构的基板上形成纳米结构膜。 之后，进行第二阶段的成膜过程，以增加纳米结构膜上的碳积累量，从而在花瓣状结构上生长多个纳米珊瑚状结构。 因此，可以获得具有高强度和纳米珊瑚结构的复合场发射源，从而提高电场发射的效果和寿命。

    Method of fabricating composite field emission source
    69.
    发明申请
    Method of fabricating composite field emission source 审中-公开
    复合场致发射源的制作方法

    公开(公告)号：US20120090986A1

    公开(公告)日：2012-04-19

    申请号：US13317955

    申请日：2011-10-31

    Applicant: Jian-Min Jeng ,  Jyi-Tsong Lo ,  Wen-Ching Shih ,  Wei-Lung Tasi

    Inventor： Jian-Min Jeng ,  Jyi-Tsong Lo ,  Wen-Ching Shih ,  Wei-Lung Tasi

    IPC: C23C14/35 ,  B82Y40/00

    CPC classification number: H01J9/025 ,  C23C16/26 ,  C23C16/45523 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30461

    Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-like structures on the petal-like structure. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.

    Abstract translation: 提供了一种制造复合场致发射源的方法。 通过使用RF磁控管溅射进行成膜处理的第一阶段，以在纳米结构膜为由多个纳米石墨壁构成的花瓣状结构的基板上形成纳米结构膜。 之后，进行第二阶段的成膜过程，以增加纳米结构膜上的碳积累量，从而在花瓣状结构上生长多个纳米珊瑚状结构。 因此，可以获得具有高强度和纳米珊瑚状结构的复合场发射源，从而提高电场发射的效果和寿命。

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