Abstract:
L'invention concerne un tube électronique sous vide comprenant au moins une cathode (C) émissive d'électrons et au moins une anode (A) disposées dans une enceinte à vide (E), la cathode présentant une structure planaire comprenant un substrat (Sb) comprenant un matériau conducteur, une pluralité d'éléments nanotube ou nanofil (NT) isolés électriquement du substrat, l'axe longitudinal desdits éléments nanotube ou nanofil étant sensiblement parallèle au plan du substrat, et au moins un premier connecteur (CE1) relié électriquement à au moins un éléments nanotube ou nanofil de manière à pouvoir appliquer à l'élément nanofil ou nanotube un premier potentiel électrique (V1).
Abstract:
The present invention relates to a method for manufacturing a field emitter electrode, in which nanowires are aligned horizontally, perpendicularly or at any angle between horizontal and perpendicular according to the direction of a generated electromagnetic field. More particularly, the present invention relates to a method for manufacturing a field emitter electrode having nanowires aligned horizontally, perpendicularly or at any angle between horizontal and perpendicular according to the direction of a generated electromagnetic field, the method comprising the steps of diluting nanowires in a solvent, dispersing the resulting solution on a substrate fixed to the upper part of an electromagnetic field generator, and fixing the nanowires aligned in the direction of an electromagnetic field generated from the electromagnetic field generator. According to the present invention, a high capacity field emitter electrode having high density nanowires aligned according to the direction of a generated electromagnetic field can be fabricated by a simple process and nanowires can be used as positive electrode materials for field emission displays (FEDs), sensors, electrodes, backlights and the like.
Abstract:
The present invention relates to an electron-emitting device and a manufacturing method thereof. According to an embodiment of the present invention, the electron-emitting device includes: a hydrophilic resin substrate; and carbon nanotubes arranged on the resin substrate. The average surface roughness (Ra) of the resin substrate is between 7.3-9.7 μm. Also, if the carbon nanotubes are multi-wall carbon nanotubes, the diameter of the carbon nanotubes is between 10-15 nm.
Abstract:
The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.