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71.发明公开
公开(公告)号：KR1020100047517A
公开(公告)日：2010-05-10
申请号：KR1020080106450
申请日：2008-10-29
CPC classification number: H01M8/1004 , C23C16/0263 , H01M4/8825 , H01M4/92 , H01M4/921 , H01M4/926 , Y02P70/56
Abstract: PURPOSE: A manufacturing method of a membrane electrode assembly for a fuel cell is provided to simplify the manufacturing process of the membrane electrode assembly, and to reduce the amount of a white pole catalyst. CONSTITUTION: A manufacturing method of a membrane electrode assembly for a fuel cell to form a nano surface structure on a polymer electrolyte membrane comprises the following steps: plasma treating the surface of the polymer electrolyte membrane(30) located in a chamber for plasma treating using PACVD method, while maintaining the pressure range of the chamber into 1.0×10^(-7)~2.75×10^(-3) pascals; forming a nanostructure(40) with hair patterns on the surface of the polymer electrolyte membrane by plasma treating for 1 seconds~60 minutes; and evaporating a catalyst on the surface of the polymer electrolyte membrane.
Abstract translation: 目的：提供一种用于燃料电池的膜电极组件的制造方法，以简化膜电极组件的制造工艺，并减少白极催化剂的量。 构成：在聚合物电解质膜上形成纳米表面结构的燃料电池用膜电极接合体的制造方法包括以下步骤：对位于室内的高分子电解质膜（30）的表面进行等离子体处理， PACVD方法，同时保持室的压力范围为1.0×10 ^（ - 7）〜2.75×10 ^（ - 3）帕斯卡; 通过等离子体处理1秒〜60分钟，在聚合物电解质膜的表面上形成具有毛发图案的纳米结构（40）; 并在聚合物电解质膜的表面上蒸发催化剂。
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72.发明授权이온 빔을 이용한 폴리머 표면 형상의 제어 방법 및 이에의해 제조된 표면에 잔물결 패턴이 형성된 폴리머와, 그응용들 失效使用离子束聚合物的表面形态控制方法及其表面纹理上的纹理图案的聚合物的方法及其应用
公开(公告)号：KR100851892B1
公开(公告)日：2008-08-13
申请号：KR1020070056900
申请日：2007-06-11
Applicant: 한국과학기술연구원
IPC: H01J37/30 , H01J37/317 , H01L21/265
Abstract: A method for controlling morphology of a surface of a polymer using an ion beam and a polymer with a ripple pattern on a surface fabricated thereby, and applications thereof are provided to form a nano-size pattern of a particular shape in a desired region by changing an irradiation time and an incident angle. A focused ion beam(4) is irradiated obliquely in an incident angle(2) of a constant angle on an irradiation region(5) of an upper surface of a polymer substrate(3) in order to form a ripple pattern. A hierarchical structure having two or more different periods is formed in the ripple pattern by adjusting a beam irradiation time. The ripple pattern is oriented in a particular direction. The width and height of the ripple pattern are controlled by adjusting at least one of the incident angle and an irradiation time of the ion beam and intensity of an acceleration voltage.
Abstract translation: 使用离子束和由其制造的表面上的波纹图案的聚合物控制聚合物的形态的方法及其应用被提供以通过改变在所需区域中形成特定形状的纳米尺寸图案 照射时间和入射角度。 在聚合物基板（3）的上表面的照射区域（5）上以一定角度的入射角（2）倾斜地照射聚焦离子束（4），以形成波纹图案。 通过调整光束照射时间，在波纹图案中形成具有两个或更多个不同周期的分层结构。 波纹图案朝向特定的方向。 通过调节入射角和离子束的照射时间和加速电压的强度中的至少一个来控制波纹图案的宽度和高度。
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公开(公告)号：KR1020080070806A
公开(公告)日：2008-07-31
申请号：KR1020080070334
申请日：2008-07-18
Applicant: 한국과학기술연구원
IPC: H01L27/105
Abstract: A multilayered structure having high spin injection efficiency using a conductive nitride as a spacer layer is provided to obtain spin injection efficiency of a high level only by correcting conventional equipment without fabricating additional equipment. A spacer layer(2) is formed on a semiconductor layer(3), made of a conductive nitride. A spin injection electrode layer(1) is formed on the conductive nitride spacer layer, made of a ferroelectric material and injecting spin to the semiconductor layer through the conductive nitride spacer layer. Transition metal can be doped into the conductive nitride spacer layer. The interface of the semiconductor layer and the conductive nitride spacer layer can be made of an ohmic contact.
Abstract translation: 提供使用导电氮化物作为间隔层的具有高自旋注入效率的多层结构，以仅通过校正常规设备而不制造附加设备才能获得高水平的自旋注入效率。 在由导电氮化物制成的半导体层（3）上形成间隔层（2）。 在由铁电体材料制成的导电氮化物间隔层上形成自旋注入电极层（1），并通过导电氮化物间隔层向半导体层注入自旋。 可以将过渡金属掺杂到导电氮化物间隔层中。 半导体层和导电氮化物间隔层的界面可以由欧姆接触形成。
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公开(公告)号：KR100845744B1
公开(公告)日：2008-07-11
申请号：KR1020070070284
申请日：2007-07-12
Applicant: 한국과학기술연구원
CPC classification number: H01L21/033 , H01L21/02631 , H01L21/3065 , H01L21/324
Abstract: A fabricating method of a super-hydrophobic surface and a super-hydrophobic surface body fabricated therefrom are provided to enhance super-hydrophobic characteristics of a final surface by forming a double protrusion structure. A mask pattern(20) is formed on a wafer(10). A plurality of first protrusions(11) and a plurality of second protrusions(12) formed between the first protrusions are simultaneously formed by etching the wafer exposed by the mask pattern. A hydrophobic thin film is formed on the first protrusions and the second protrusions. The process for forming the first and second protrusions is performed by a plasma etch process using CF4 gas. The process for forming the first and second protrusions is performed under conditions of etch pressure of 2Pa-5pa and RF power of 100W-300W.
Abstract translation: 提供由其制造的超疏水表面和超疏水表面体的制造方法，以通过形成双突起结构来增强最终表面的超疏水特性。 在晶片（10）上形成掩模图案（20）。 通过蚀刻由掩模图案曝光的晶片，同时形成在第一突起之间形成的多个第一突起（11）和多个第二突起（12）。 在第一突起和第二突起上形成疏水性薄膜。 通过使用CF 4气体的等离子体蚀刻工艺来进行用于形成第一和第二突起的工艺。 用于形成第一和第二突起的工艺在蚀刻压力为2Pa-5pa和RF功率为100W-300W的条件下进行。
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公开(公告)号：KR1020060083348A
公开(公告)日：2006-07-20
申请号：KR1020050003859
申请日：2005-01-14
Applicant: 한국과학기술연구원
IPC: C01B31/02
Abstract: 본 발명은 수소를 거의 함유하지 않고 sp
3 분율이 높으며, 잔류응력이 감소되고 전기 저항이 증가된 것을 특징으로 하는 경질 탄소 박막을 제공한다. 이 박막은 아크 방전에 의하여 고체 탄소원의 아크젯 플라즈마를 발생시키고, 상기 반응 챔버에 아르곤을 일정한 유량으로 공급하여 상기 기판 상에 형성된다.
경질 탄소 박막, 진공여과아크법, 아르곤 가스, 잔류응력-
Patent Agency Ranking
公开(公告)号：KR1020050096721A
公开(公告)日：2005-10-06
申请号：KR1020040022386
申请日：2004-03-31
Applicant: 한국과학기술연구원
IPC: A61F2/30
CPC classification number: A61F2/30 , A61F2002/3006 , A61L27/303 , C23C16/22
Abstract: 본 발명은 인공관절의 모재와, 상기 모재 표면에 코팅된 보호층을 포함하여 구성되며, 상기 보호층은 실리콘이 함유된 다이아몬드상 탄소박막인 것을 특징으로 하는 의료용 복합재료 및 그 제조방법을 제공한다. 본 발명에 따른 의료용 복합재료는 생체액 내에서의 내부식성 및 내마모성이 우수하며, 모재와의 접착성을 크게 향상된다.
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公开(公告)号：KR1020050040248A
公开(公告)日：2005-05-03
申请号：KR1020030075402
申请日：2003-10-28
Applicant: 한국과학기술연구원
IPC: G11B5/31
Abstract: 본 발명은 자성금속 박막 사이에 미소 두께의 균일한 비자성금속 박막을 형성할 수 있는 다층박막 제조방법에 관한 것이다. 본 발명은 자성금속 박막을 형성하는 단계; 자성금속 박막위에 알루미늄을 증착하는 단계; 증착된 알루미늄위에 자성금속을 증착하여 알루미나이드 박막을 형성하는 단계; 그리고 알루미나이드 박막위에 자성금속 박막을 증착하는 단계로 이루어진다. 증착되는 알루미늄의 원자 에너지는 원자당 5eV이하이고, 두께는 5Å 내지 15Å이다. 자성금속은 Co, Fe, Ni, 및 이들의 화합물 중 어느 하나로 이루어진다. 알루미나이드 박막의 결정학적 정합성을 향상시키기 위해 진공로에서 200℃ 내지 400℃의 온도범위에서 30분 내지 60분동안 열처리하는 단계를 더 포함한다.
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公开(公告)号：KR100465738B1
公开(公告)日：2005-01-13
申请号：KR1020020038706
申请日：2002-07-04
Applicant: 한국과학기술연구원
IPC: C23C14/06
Abstract: PURPOSE: A hard carbon film is provided which does not deteriorate mechanical properties even though residual stress is being reduced, and a manufacturing method of the hard carbon film is provided which is capable of freely controlling structure of the thin film as adding a third element to the carbon film. CONSTITUTION: The multi layer hard carbon film comprises first hard carbon film layer which contains 0.025 to 10 at.% of silicon and is formed of diamond-like carbon; and second hard carbon film layer formed of pure diamond-like carbon only, wherein the multi layer hard carbon film is a multi layer formed by alternately laying up the first hard carbon film layer and second hard carbon film layer. The method comprises the processes of generating carbon plasma by impressing a power supply to an anode and a cathode on which a solid phase carbon source is mounted; mounting a silicon target on a sputter gun, and impressing a power supply to the sputter gun as varying the power supply periodically so that silicon is sputtered; and alternately depositing silicon contained first hard carbon film layer and second hard carbon film layer formed of carbon only on a substrate installed in reaction chamber.
Abstract translation: 目的：提供一种硬质碳膜，其即使在残余应力降低的情况下也不降低机械性能，并且提供了一种硬质碳膜的制造方法，该硬质碳膜能够自由地控制薄膜的结构， 碳膜。 构成：多层硬碳膜包含第一硬碳膜层，其含有0.025-10原子％的硅并由类金刚石碳形成; 以及仅由纯金刚石状碳形成的第二硬碳膜层，其中，所述多层硬碳膜为交替铺设第一硬碳膜层和第二硬碳膜层而形成的多层膜。 该方法包括通过向阳极施加电源来产生碳等离子体的过程和其上安装有固相碳源的阴极; 将硅靶安装在溅射枪上，并且周期性地改变电源以使硅溅射;以及向电子枪施加电源， 仅在安装在反应室中的基板上交替地沉积含硅的第一硬碳膜层和由碳形成的第二硬碳膜层。
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公开(公告)号：KR100436565B1
公开(公告)日：2004-06-19
申请号：KR1020010067540
申请日：2001-10-31
Applicant: 한국과학기술연구원
IPC: C23C14/34
Abstract: PURPOSE: A preparation method for reducing residual stress as maintaining superior mechanical properties by adding silicon as a third element to silicon incorporated tetrahedral amorphous carbon thin film is provided. CONSTITUTION: The preparation method of silicon incorporated tetrahedral amorphous carbon thin film is characterized in that the silicon incorporated tetrahedral amorphous carbon thin film contains silicon by sputtering silicon using magnetron sputtering method at the same time when depositing the silicon incorporated tetrahedral amorphous carbon thin film using filtered vacuum arc deposition method, wherein the preparation method comprises the step of generating carbon plasma using the filtered vacuum arc deposition method by mounting a solid carbon source on the filter vacuum arc equipment and impressing a filtered vacuum arc power source to the filter vacuum arc equipment using a filtered vacuum arc equipment comprising arc ion source part (11), magnetic filtering part (12) and raster unit (12), a magnetron sputtering part comprising magnetron sputter gun (15) and sputter power supply system, and a synthesizing equipment comprising reaction chamber, and simultaneously depositing carbon and silicon on a substrate (14) mounted in the reaction chamber by mounting silicon on the sputter gun of the magnetron sputtering part and impressing a magnetron sputtering power source to the sputter gun, thereby sputtering the silicon at the same time.
Abstract translation: 目的：提供一种通过向硅结合的四面体非晶碳薄膜添加硅作为第三元素来保持优异的机械性能以减少残余应力的制备方法。 一种硅掺入四面体无定形碳薄膜的制备方法，其特征在于，在掺入硅的四面体无定形碳薄膜的同时，采用磁控溅射方法溅射硅， 其中所述制备方法包括使用经过滤的真空电弧沉积方法通过在所述过滤器真空电弧设备上安装固体碳源并且将过滤后的真空电弧电源施加到所述过滤器真空电弧设备来产生碳等离子体的步骤， 包括电弧离子源部件（11），磁性过滤部件（12）和光栅单元（12）的过滤真空电弧设备，包括磁控溅射枪（15）和溅射电源系统的磁控溅射部件以及包括反应 室，并同时存放汽车 通过将硅安装在磁控溅射部件的溅射枪上，并将磁控溅射电源施加到溅射枪上，从而同时溅射硅，从而在安装在反应室中的衬底（14）
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公开(公告)号：KR1020040003879A
公开(公告)日：2004-01-13
申请号：KR1020020038706
申请日：2002-07-04
Applicant: 한국과학기술연구원
IPC: C23C14/06
CPC classification number: C23C28/42 , C22C29/02 , C23C14/0611 , C23C14/35
Abstract: PURPOSE: A hard carbon film is provided which does not deteriorate mechanical properties even though residual stress is being reduced, and a manufacturing method of the hard carbon film is provided which is capable of freely controlling structure of the thin film as adding a third element to the carbon film. CONSTITUTION: The multi layer hard carbon film comprises first hard carbon film layer which contains 0.025 to 10 at.% of silicon and is formed of diamond-like carbon; and second hard carbon film layer formed of pure diamond-like carbon only, wherein the multi layer hard carbon film is a multi layer formed by alternately laying up the first hard carbon film layer and second hard carbon film layer. The method comprises the processes of generating carbon plasma by impressing a power supply to an anode and a cathode on which a solid phase carbon source is mounted; mounting a silicon target on a sputter gun, and impressing a power supply to the sputter gun as varying the power supply periodically so that silicon is sputtered; and alternately depositing silicon contained first hard carbon film layer and second hard carbon film layer formed of carbon only on a substrate installed in reaction chamber.
Abstract translation: 目的：提供即使残留应力降低也不会降低机械性能的硬质碳膜，并且提供了能够自由地控制薄膜结构的硬碳膜的制造方法，因为添加第三元素 碳膜。 构成：多层硬质碳膜由含有0.025〜10原子％的硅，由金刚石状碳构成的第一硬质碳膜层构成， 和仅由纯金刚石碳形成的第二硬质碳膜层，其中多层硬质碳膜是通过交替铺设第一硬质碳膜层和第二硬质碳膜层而形成的多层。 该方法包括通过向其上安装固相碳源的阳极和阴极施加电力来产生碳等离子体的方法; 将硅靶安装在溅射枪上，并且在周期性地改变电源时将电源施加到溅射枪，使得硅被溅射; 并且交替地将含有第一硬碳膜层的硅和由碳形成的第二硬碳膜层沉积在安装在反应室中的基板上。
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