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公开(公告)号：KR1019930001898B1
公开(公告)日：1993-03-19
申请号：KR1019900007227
申请日：1990-05-21
Applicant: 한국전자통신연구원
IPC: H01L21/263
Abstract: The vacuum reactor for heating both sides of the workpiece in the rapid heat treatment apparatus includes an upper tungsten halogen lamp (1) on the wall (7) of the vacuum reactor the sides of which are welded by an oxidized aluminum plate, an infrared heating part (3) provided at the top of an upper window (5), a lower tungsten halogen lamp (2) provided at the lower infrared heating part (4) provided at the bottom of an lower window (6). The reaction room (A) is formed by the upper window, the lower window, and the reactor walls (7).
Abstract translation: 用于在快速热处理设备中加热工件的两侧的真空反应器包括在真空反应器的壁（7）上的上卤钨灯（1），其侧面由氧化铝板焊接，红外线加热 设置在上部窗口（5）的顶部的部分（3），设置在下部窗口（6）的底部处的下部红外加热部分（4）处的下部钨卤素灯（2）。 反应室（A）由上窗，下窗和反应器壁（7）形成。
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公开(公告)号：KR1019920009371B1
公开(公告)日：1992-10-15
申请号：KR1019900007234
申请日：1990-05-21
Applicant: 한국전자통신연구원
IPC: H01L21/263
Abstract: The apparatus is used for forming a thin insulating film of silicone oxides or silicon nitrides or minimizing thermal deficiency generated from long and high-temp. process in manufacturing semiconductor VLSI circuits. The apparatus comprises an interfacing section (1) for inputting operating conditions; main controller (2) for controlling all operations including controlling of wafer support-frame controller (4) according to operating conditions of the section (1); chamber controller (3) for controlling lamp power supply section (5), gas controller (6), vacuum discharge section (7), temperature sensing section (8) according to the controller (2); cooling-water controlling section (10) for supplying water to the inner wall of reactor (11).
Abstract translation: 该装置用于形成硅氧化物或氮化硅的薄绝缘膜或最小化从长期和高温产生的热缺陷。 制造半导体VLSI电路的过程。 该装置包括用于输入操作条件的接口部分（1） 主控制器（2），用于控制所有操作，包括根据部分（1）的操作条件控制晶片支撑框架控制器（4）; 用于控制灯电源部分（5），气体控制器（6），真空放电部分（7），根据控制器（2）的温度检测部分（8））的室控制器（3） 用于向反应器（11）的内壁供水的冷却水控制部（10）。
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Patent Agency Ranking
公开(公告)号：KR1019920004776B1
公开(公告)日：1992-06-15
申请号：KR1019880017979
申请日：1988-12-30
Abstract: The accelarator is used for accelerating ion beam extracted from ion source to proper energy level in manufacturing semiconductor elements. The accelerator promotes to change clearance between electrodes in order to improves focusing effect of ion beam. The clearance is changed by inserting various thickness of rings or changing position of key groove for fixing electrode. Diameter of electrode is changed by providing inserting electrode at accerating electrode or attaching additional electrode to the electrode. Collimation focusing mode or cross focusing mode in ion optical system is optionally decided by changing diameter of accellerating electrode.
Abstract translation: 在制造半导体元件时，加速器用于将从离子源提取的离子束加速至适当的能级。 加速器促进改变电极之间的间隙，以改善离子束的聚焦效果。 通过插入各种厚度的环或改变固定电极的键槽的位置来改变间隙。 电极的直径通过在电极处设置插入电极或者将附加电极附接到电极来改变。 离子光学系统中的准直聚焦模式或交叉聚焦模式可选择通过改变加热电极的直径来决定。
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公开(公告)号：KR1019910005371B1
公开(公告)日：1991-07-29
申请号：KR1019880010463
申请日：1988-08-17
Applicant: 한국전자통신연구원
IPC: H01L29/70
Abstract: High speed semiconductor device for computer and communication is manufactured by: forming a N+-collector (107) after isolating the device using the oxide layer (108) and polycrystalline silicon (109); depositing the polycrystalline silicon (117) after forming the emittery region by mask processing followed by etching the oxide films; forming P+-imactive base region by etching the polycrystalline silicon films; forming a P- active base region by rapid thermal annealing the silicon deposited on the boron silicate glass (119) after ion-dry etching through the mask process for forming a base electrode of P+-polycrystalline Si with low pressure chemical vapor deposition (LPCVD).
Abstract translation: 通过以下方式制造用于计算机和通信的高速半导体器件：在使用氧化物层（108）和多晶硅（109）隔离器件之后形成N + - 收集器（107）; 在通过掩模处理形成发光区之后沉积多晶硅（117），随后蚀刻氧化物膜; 通过蚀刻多晶硅膜形成P +活性基区; 通过用于通过低压化学气相沉积（LPCVD）形成P + - 多晶硅的基极的掩模工艺在离子干蚀刻之后快速热退火沉积在硼硅酸盐玻璃（119）上的硅，从而形成P活性基区， 。
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公开(公告)号：KR101057658B1
公开(公告)日：2011-08-18
申请号：KR1020080122019
申请日：2008-12-03
Applicant: 한국전자통신연구원
IPC: H01L31/00
Abstract: 본 발명은 평판형 구조를 가지면서, 각 마이크로픽셀 간을 효과적으로 격리시켜 동작의 정확성 및 안정성을 높인 실리콘 포토멀티플라이어 및 그 제조방법에 관한 것으로서, 상기 실리콘 포토멀티플라이어는, 기판과, 상기 기판의 상부에 형성되어 입력광에 의한 전류의 생성 및 증폭이 이루어지는 활성층과, 상기 활성층 보다 더 깊게 형성되고, 전기적 절연 및 광반사 기능을 갖는 물질로 내부가 매립되어, 인접한 마이크로픽셀의 활성층 간의 누화(Cross talk)를 방지하는 트렌치와, 상기 활성층의 상부면에 각각 형성된 애노드 전극 및 캐소드 전극과, 상기 활성층의 애노드 전극 및 캐소드 전극이 형성되지 않은 나머지 상부면에 형성된 절연층을 포함하여 이루어진다.
실리콘 포토멀티플라이어(SIPM), 평판형, 트렌치 공법, 애벌런치 효과Abstract translation: 的硅光电倍增器，当它涉及一种用于生产硅光电倍增器中，基板和以提高的精度和操作的可靠性将基板有效地分离，同时具有板状结构中的每个MP肝本发明 串扰在有源层上方形成产生并通过由该输入光，在电流放大，被更深入地比有源层的形成，内部填充有具有电绝缘性和光反射功能的材料，在相邻的微像素有源层之间（跨 以防止谈话沟槽），包括未在所述有源层至所述有源层的顶表面形成的阳极电极和阴极电极的每个形成为形成在阳极电极和剩余的顶表面的阴极电极的绝缘层。
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