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公开(公告)号：KR100679235B1
公开(公告)日：2007-02-06
申请号：KR1020060014894
申请日：2006-02-16
Applicant: 한국전자통신연구원
IPC: H01L33/14
Abstract: A semiconductor light emitting device and its manufacturing method are provided to improve a light emitting efficiency and to enhance temperature characteristics by forming an upper clad layer using two-step epitaxial growing processes under different temperature conditions. A first DBR(Distributed Brag Reflector)(220) doped with N type ions is formed on a substrate(210). A lower clad layer(230) is formed on the first DBR. A light emissive active layer(240) is formed on the lower clad layer. A first upper clad layer is formed on the light emissive active layer in a first growth temperature range. A second upper clad layer is formed on the first upper clad layer in a second growth temperature range. A delta doping layer is formed on the second upper clad layer.
Abstract translation: 提供半导体发光器件及其制造方法以通过在不同温度条件下使用两步外延生长工艺形成上包覆层来提高发光效率并提高温度特性。 在衬底（210）上形成掺杂有N型离子的第一DBR（分布式布拉格反射器）（220）。 下包层（230）形成在第一DBR上。 在下部覆层上形成发光有源层（240）。 第一上包覆层在第一生长温度范围内形成在发光有源层上。 第二上部包覆层在第二生长温度范围内形成在第一上部包覆层上。 在第二上包层上形成三角掺杂层。
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公开(公告)号：KR100667214B1
公开(公告)日：2007-01-12
申请号：KR1019990039867
申请日：1999-09-16
Applicant: 한국전자통신연구원
IPC: G02B6/02
Abstract: 1. 청구범위에 기재된 발명이 속하는 기술분야
본 발명은 광 모드 크기 변환장치에 관한 것임.
2. 발명이 해결하고자 하는 기술적 과제
본 발명은 광도파로의 폭 또는 두께를 작게 하는 고정밀 테이퍼 공정을 필요로 하지 않아 제작 시간과 제작 비용을 절감할 수 있는 상호 테이퍼측면 접합 광도파로를 갖는 광 모드 크기 변환장치를 제공하고자 함.
3. 발명의 해결 방법의 요지
본 발명은 광모드 크기 변환장치에 있어서, 광도파로 입사부로서의 제1 광도파로층과 광도파로 출사부로서의 제2 광도파로층이 동일 평면상에서 각 일단부가 상호 측면 접합되어 형성되되, 상기 상호 접합된 부분의 제1 및 제2 광도파로층 각 단부가 각기 대향하여 그 폭이 좁아지는 테이퍼된(tapered) 형태를 갖는 것을 특징으로 함.
4. 발명의 중요한 용도
본 발명은 광통신 시스템 등에 이용됨.
광섬유, 광도파로, 상호 테이퍼측면 접합, 광 모드-
公开(公告)号：KR1020040054442A
公开(公告)日：2004-06-25
申请号：KR1020020081481
申请日：2002-12-18
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: PURPOSE: A method for forming a quantum dot using a selective area growth and an optical device manufactured by using the same are provided to be capable of increasing the allowable error extent of optimizing variables, easily applying optical mode conversion characteristics to a photon IC(Integrated Circuit), and variously controlling the size and density of quantum dots at a time. CONSTITUTION: A substrate(22) is prepared for forming quantum dots. A dielectric mask is formed on the predetermined portion of the substrate. A plurality of quantum dots are formed on the resultant structure except the dielectric mask region. The size of the quantum dot is capable of being changed by controlling the volume of material atoms moved to the opened portion of the substrate. Preferably, the dielectric mask having a thickness of 200-300 nm is made of silicon nitride.
Abstract translation: 目的：提供使用选择性区域生长形成量子点的方法和使用该方法制造的光学装置，以便能够增加优化变量的容许误差范围，容易地将光学模式转换特性应用于光子IC（集成 电路），并且一次不同地控制量子点的尺寸和密度。 构成：制备用于形成量子点的衬底（22）。 在基板的预定部分上形成介电掩模。 除了电介质掩模区域之外，在所得结构上形成多个量子点。 量子点的尺寸能够通过控制移动到衬底的开口部分的材料原子的体积来改变。 优选地，具有200-300nm厚度的电介质掩模由氮化硅制成。
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公开(公告)号：KR1020040052017A
公开(公告)日：2004-06-19
申请号：KR1020020079735
申请日：2002-12-13
Applicant: 한국전자통신연구원
IPC: H01S5/30
CPC classification number: H01S5/3409 , H01S5/1003 , H01S5/34373
Abstract: PURPOSE: A semiconductor laser device and a method of manufacturing the same are provided to obtain high optical coupling efficiency without deterioration of optical characteristics. CONSTITUTION: A semiconductor laser device includes an active waveguide(100a), a passive waveguide(100b) and a plurality of clad layers(130,155,160). The active waveguide(100a) is formed on the predetermined portion of the substrate(110). The passive waveguide(100b) is provided with a core layer(145). Each of the clad layers(130,155,160) is formed on the active waveguide(100a) and the passive waveguide(100b). And, a pair of separated confinement heterostructure(SCH) layers(115,125) are formed on top and below the core layer(120) of the active waveguide(100a).
Abstract translation: 目的：提供一种半导体激光器件及其制造方法，以获得高的光耦合效率，而不会降低光学特性。 构成：半导体激光器件包括有源波导（100a），无源波导（100b）和多个包覆层（130,155,160）。 有源波导（100a）形成在基板（110）的预定部分上。 无源波导（100b）设置有芯层（145）。 每个包覆层（130,155,160）形成在有源波导（100a）和无源波导（100b）上。 并且，在有源波导（100a）的芯层（120）的上方和下方形成一对分离的限制异质结构（SCH）层（115,125）。
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公开(公告)号：KR1020010057711A
公开(公告)日：2001-07-05
申请号：KR1019990061097
申请日：1999-12-23
Applicant: 한국전자통신연구원
IPC: H01L29/00
Abstract: PURPOSE: A method for manufacturing a gain clamped semiconductor optical amplifier(SOA) is provided to constantly fix the intensity of carriers within a resonant with oscillation of a laser using a distributed Bragg reflector(DBR) lattice. CONSTITUTION: A method for manufacturing a gain clamped semiconductor optical amplifier(SOA) forms a passive waveguide layer(12) and an InP spacer(13) on a N-InP substrate(11). The first oxide layer(14) is formed on the InP spacer. The first oxide layer is selectively removed by patterning using electronic beam lithography to form a selective active layer growth mask pattern(16). A lattice pattern(17) and an active layer waveguide(18) are simultaneously formed by selective active layer growth using organic metal chemical vapor deposition. A mesa structure for growing a current shield layer(19) is formed on the resulting surface using light lithography. The current shield layer is grown by organic metal chemical vapor deposition. A n-InP buffer layer(19a) is formed on the entire surface including the current shield layer. The second oxide layer is formed on the n-InP buffer layer. The second oxide layer is patterned to form a metal electrode connected to the active layer waveguide.
Abstract translation: 目的：提供一种用于制造增益钳位的半导体光放大器（SOA）的方法，以使用分布式布拉格反射器（DBR）晶格在激光振荡的谐振中恒定地固定载流子的强度。 构成：制造增益钳位半导体光放大器（SOA）的方法在N-InP衬底（11）上形成无源波导层（12）和InP间隔物（13）。 第一氧化物层（14）形成在InP间隔物上。 通过使用电子束光刻的图案化选择性地去除第一氧化物层以形成选择性有源层生长掩模图案（16）。 通过使用有机金属化学气相沉积的选择性有源层生长，同时形成晶格图案（17）和有源层波导（18）。 使用光刻法在所得表面上形成用于生长电流屏蔽层（19）的台面结构。 电流屏蔽层通过有机金属化学气相沉积生长。 在包括电流屏蔽层的整个表面上形成n-InP缓冲层（19a）。 第二氧化物层形成在n-InP缓冲层上。 图案化第二氧化物层以形成连接到有源层波导的金属电极。
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Patent Agency Ranking
公开(公告)号：KR1020010011142A
公开(公告)日：2001-02-15
申请号：KR1019990030379
申请日：1999-07-26
Applicant: 한국전자통신연구원
IPC: H01S5/30
Abstract: PURPOSE: A gain-coupled type of single mode semiconductor laser is provided to minimize an optic loss and simplify the manufacturing process. CONSTITUTION: In a method of making a semiconductor laser having a diffracting grating, a silicon nitride film or a silicon oxide film is formed as the diffracting grating on the first epitaxial layer. The second epitaxial layer is developed on the whole surface on which the silicon nitride film or the silicon oxide film was formed. In a gain-coupled type of single mode semiconductor laser, an active layer(22) and the first clad layer(23) are applied sequently on the substrate(21). a diffracting grating (24) of a silicon nitride or a silicon oxide is formed on the first clad layer. The second clad layer(25) and a resistive electrode contact layer(26) are applied sequently over the diffracting grating layer.
Abstract translation: 目的：提供增益耦合型单模半导体激光器，以最大限度地减少光损耗并简化制造过程。 构成：在制造具有衍射光栅的半导体激光器的方法中，在第一外延层上形成氮化硅膜或氧化硅膜作为衍射光栅。 第二外延层在其上形成有氮化硅膜或氧化硅膜的整个表面上显影。 在增益耦合型单模半导体激光器中，有源层（22）和第一覆层（23）依次施加在衬底（21）上。 在第一包层上形成氮化硅或氧化硅的衍射光栅（24）。 第二覆盖层（25）和电阻电极接触层（26）依次施加在衍射光栅层上。
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公开(公告)号：KR1020010004465A
公开(公告)日：2001-01-15
申请号：KR1019990025142
申请日：1999-06-29
Applicant: 한국전자통신연구원
IPC: H01S5/30
Abstract: PURPOSE: A method for manufacturing a gain-combined single mode semiconductor laser is provided to manufacture a single mode laser light source by epi-layer growth once. CONSTITUTION: A method for manufacturing a gain-combined with single mode semiconductor laser has following steps. An active layer(12) is formed on a substrate(13). The active layer(12) has a quantum wire(8) structure. A clad layer(11) is formed is formed on the active layer(12). A resistive electrode contact layer(10) is formed on the clad layer. A stripe electrode is formed in order to generate laser-resonator in a perpendicular direction to the quantum wire(8) on the resistive electrode contact layer(10), thereby manufacture a single mode laser light source by one crystal growth.
Abstract translation: 目的：提供一种制造增益组合单模半导体激光器的方法，通过外延生长一次制造单模激光光源。 构成：用于制造增益组合单模半导体激光器的方法具有以下步骤。 在衬底（13）上形成有源层（12）。 活性层（12）具有量子线（8）结构。 在活性层（12）上形成包覆层（11）。 在包层上形成电阻电极接触层（10）。 形成带状电极以便在与电阻电极接触层（10）上的量子线（8）垂直的方向上产生激光谐振器，从而通过一个晶体生长制造单模激光光源。
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公开(公告)号：KR100174879B1
公开(公告)日：1999-02-01
申请号：KR1019950040297
申请日：1995-11-08
Applicant: 한국전자통신연구원
IPC: H01L29/40
CPC classification number: H01L29/66462 , H01L21/28587 , H01L21/7605
Abstract: 반절연막의 재성장 방법을 이용하여 반도체 소자를 격리(isolation) 시킴으로써 소자의 격리 특성을 향상시킬 수 있는 격리방법이 개시되어 있다.
본 발명은 화합물 반도체 기판상에 버퍼층, 채널층, 스페이서층, 쇼트키층 및 오믹층을 순차적으로 성장시키는 공정과, 상기 결과물상에 활성영역을 정의하기 위한 마스크 패턴을 이용하여 상기 기판의 소정부위까지 각 층들을 차례로 식각하여 수직한 식각단면을 얻는 공정과, 상기 정의된 격리영역과 활성영역과의 단차를 평탄화시킴과 아울러 식각된 활성영역 측면부위의 누설전류 경로를 차단시킬 수 있도록 상기 식각된 격리영역에 반절연막을 선택적으로 재성장시키는 공정과, 상기 마스크 패턴을 제거한 후 소스 및 드레인 영역에 오믹 금속층을 형성하는 공정과, 상기 활성영역의 쇼트키층의 일부를 노출시킨 후 노출된 쇼트키층과의 접속을 위한 게이트 전극과 상기 오믹 금속층과의 접속을 위한 소스 및 드레인 전극을 형성하는 공정으로 구� �된다. -
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