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公开(公告)号：KR1020150085277A
公开(公告)日：2015-07-23
申请号：KR1020140004971
申请日：2014-01-15
Applicant: 한국표준과학연구원
IPC: G01N21/552 , G01N21/3504
Abstract: 본실시예에따른가스상태의흡착종분석장치는내부가진공으로유지되며, 적외선광이진출입되는입사창과출사창이측벽에동축배치되는반응기; 상기반응기의상부면에결합되며, 내부공간부가진공으로유지되는플라즈마장치; 상기반응기와플라즈마장치사이에개재되며, 상기플라즈마장치와마주보는면을분석대상물질이통과하는크리스털; 상기크리스털이중앙부근에결합되며, 일단은상기반응기의상부면에고정되어주변온도를조절하는크리스털히팅홀더; 상기크리스털히팅홀더와결합되며, 상기크리스털과대응되는위치에요홈이형성되는홀더부재; 상기출사창에서출력되는적외선빔을검출하는검출기; 및검출된빔의세기를이용하여시료의정성및 정량분석을수행하는분석기;를포함하며, 상기크리스털은상기플라즈마장치와마주보는면의표면에분산배치되는나노파티클을포함하는것을특징으로한다.
Abstract translation: 根据本发明实施方案的气相中吸附物质的分析装置包括其内部可以保持在真空状态的反应器，并且用于使红外光通过的入口窗和出口窗同轴地布置在 侧墙; 连接到反应器的上表面的等离子体装置，其中内部空间单元可以保持在真空状态; 设置在反应器和等离子体装置之间的晶体，其中分析物通过面向等离子体装置的表面; 固定在反应器的上表面并控制环境温度的晶体加热器，其中晶体连接到其中心; 连接到晶体加热保持器的保持器元件，其中在对应于晶体的位置形成有槽; 检测器，检测从出口窗口输出的红外线束; 以及通过使用所检测的光束强度对样品进行定性和定量分析的分析仪，其特征在于包括纳米颗粒，其中所述晶体被分配设置在面向所述等离子体装置的表面上。
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公开(公告)号：KR1020130077434A
公开(公告)日：2013-07-09
申请号：KR1020110146142
申请日：2011-12-29
Applicant: 한국표준과학연구원
Abstract: PURPOSE: A multi-wavelength infrared image sensor and manufacturing method thereof are provided to precisely measure an absolute temperature of an object, soil distribution, and atmospheric gas distribution which are hard to observe with a single-color infrared sensor. CONSTITUTION: A multi-wavelength infrared image sensor includes a detection element (10), a readout circuit (20), and an indium bump (30). One or more super-pixels (11) are formed on the top surface of the detection element. A detector active layer corresponding to the super-pixels is formed on the underside of the detection element. The readout circuit is connected to the underside of the detection element and reads signals of the detector actively layer. The indium bump connects the detector active layer and the readout circuit.
Abstract translation: 目的：提供一种多波长红外图像传感器及其制造方法，以精确测量用单色红外传感器难以观察到的物体的绝对温度，土壤分布和气氛分布。 构成：多波长红外图像传感器包括检测元件（10），读出电路（20）和铟凸块（30）。 一个或多个超像素（11）形成在检测元件的顶表面上。 对应于超像素的检测器有源层形成在检测元件的下侧。 读出电路连接到检测元件的下侧，并读取检测器主动层的信号。 铟凸块连接检测器有源层和读出电路。
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公开(公告)号：KR1020120101865A
公开(公告)日：2012-09-17
申请号：KR1020110019943
申请日：2011-03-07
Applicant: 한국표준과학연구원
Abstract: PURPOSE: A method for forming a silicon compound thin film is provided to obtain a high deposition rate, uniformity, and less impurities even at low temperatures by using an atomic layer deposition method. CONSTITUTION: A method for forming a silicon compound thin film comprises the steps of: supplying HSi(isopropyl)3 to a substrate as source gas and supplying an oxidizing agent or nitriding agent to the HSi(isopropyl)3, wherein the HSi(isopropyl)3 and the oxidizing or nitriding agent is supplied as being plasma. [Reference numerals] (AA) TIPSH injection; (BB, DD) Purge; (CC) O2 injection; (EE, FF, GG, HH) 3 seconds; (II, JJ) Plasma on(50W)
Abstract translation: 目的：提供一种形成硅化合物薄膜的方法，通过使用原子层沉积方法即使在低温下也能获得高的沉积速率，均匀性和较少的杂质。 构成：形成硅化合物薄膜的方法包括以下步骤：将HSi（异丙基）3作为源气体供给到基底，向HSi（异丙基）3供给氧化剂或氮化剂，其中HSi（异丙基） 3，氧化或氮化剂作为等离子体供给。 （附图标记）（AA）TIPSH注射; （BB，DD）清洗; （CC）O2注射; （EE，FF，GG，HH）3秒; （II，JJ）等离子体（50W）
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公开(公告)号：KR1020110120064A
公开(公告)日：2011-11-03
申请号：KR1020100039570
申请日：2010-04-28
Applicant: 한국표준과학연구원
IPC: H01L21/66
Abstract: PURPOSE: A semiconductor surface inspecting apparatus and a pinhole inspection method using the same in which the pinhole is arranged on the insulating layer of the semiconductor are provided to prevent defective product production generated in a super-integrated semiconductor device production line in beforehand, thereby significantly improving productivity and price competitiveness. CONSTITUTION: A semiconductor test sample(100) is mounted in a fixing plate(200). A transparent substrate(300) is separately arranged from the fixing plate. A light source(500) projects light from the upper part of the transparent substrate. A voltage source(600) generates a voltage difference between the semiconductor test sample and an electrode. A current measurement device(700) measures a current flowing between the semiconductor test sample and electrode.
Abstract translation: 目的：提供一种半导体表面检查装置和使用该针孔检查方法的针孔检查方法，其中针孔布置在半导体的绝缘层上以防止预先在超级一体化半导体器件生产线中产生的产品产生不良，从而显着地 提高生产力和价格竞争力。 构成：半导体测试样品（100）安装在固定板（200）中。 透明基板（300）与固定板分开设置。 光源（500）投射来自透明基板的上部的光。 电压源（600）产生半导体测试样品和电极之间的电压差。 电流测量装置（700）测量在半导体测试样品和电极之间流动的电流。
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公开(公告)号：KR101062663B1
公开(公告)日：2011-09-06
申请号：KR1020090092123
申请日：2009-09-29
Applicant: 한국표준과학연구원
IPC: H01L21/00
Abstract: 본 발명은 유전체 창문 오염 방지 장치, 자체 플라즈마 광 방출 스펙트럼 장치, 및 입자 측정 장치를 제공한다. 이 유전체 창문 오염 방지 장치는 진공 용기에 부착된 플랜지와 결합하는 유전체 창문, 및 유전체 창문의 주위 또는 플랜지에 배치되어 오염 방지 가스를 상기 유전체 창문에 제공하는 노즐부를 포함한다.
나선형 노즐, 오염 방지 가스, 광 방출 스펙트럼, 플라즈마, 미세 입자.-
Patent Agency Ranking
公开(公告)号：KR1020110042573A
公开(公告)日：2011-04-27
申请号：KR1020090099302
申请日：2009-10-19
Applicant: 한국표준과학연구원
Abstract: PURPOSE: An evaluation method of anti-corrosion property for chemical gas is provided to obtain same measurement value even when the size or the shape of the chamber is different, by standardizing the environment of the chamber. CONSTITUTION: A specimen of the coated parts is manufactured(P1). The withstand voltage and the erosion degree of the manufactured specimen are measured(P2). The driving condition of the chemical gas generation chamber is set as the experiment environment(P3). The specimen is placed in the chamber which is set as the experiment environment, and exposed to the chemical gas for corrosion reaction(P4).
Abstract translation: 目的：通过标准化室内环境，提供化学气体的防腐蚀性评价方法，即使在室的尺寸或形状不同的情况下也能获得相同的测定值。 构成：制造涂层部件的试样（P1）。 测量制造的试样的耐受电压和侵蚀程度（P2）。 将化学气体发生室的驱动条件设定为实验环境（P3）。 将样品置于作为实验环境的室内，暴露于化学气体进行腐蚀反应（P4）。
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公开(公告)号：KR1020110034727A
公开(公告)日：2011-04-06
申请号：KR1020090092123
申请日：2009-09-29
Applicant: 한국표준과학연구원
IPC: H01L21/00
CPC classification number: H01L21/67028 , H01J37/32009 , H05H1/46
Abstract: PURPOSE: A dielectric window pollution preventing apparatus, a self plasma light emission spectrum device, and a particle measuring device are provided to prevent a dielectric window from being polluted due to process gas and process byproducts by spraying pollution preventing gas to the dielectric window through a nozzle unit. CONSTITUTION: A dielectric window is combined with a flange attached to a vacuum container. A nozzle unit(520a,520b) is arranged around the dielectric window or flange. The nozzle unit provides the pollution preventing gas to the dielectric window. The flange includes a first flange(515a) and a second flange(515b). The dielectric window includes a first dielectric window(528a) combined with the first flange and a second dielectric window(528b) combined with the second flange.
Abstract translation: 目的：提供一种电介质窗污染防止装置，自等离子体发光光谱装置和粒子测量装置，以防止由于处理气体和加工副产物而导致介质窗被污染，通过将污染防止气体喷射到电介质窗口 喷嘴单元。 构成：电介质窗与连接到真空容器的法兰结合。 喷嘴单元（520a，520b）布置在电介质窗或凸缘周围。 喷嘴单元向电介质窗提供防污染气体。 凸缘包括第一凸缘（515a）和第二凸缘（515b）。 电介质窗包括与第一凸缘组合的第一电介质窗口（528a）和与第二凸缘组合的第二电介质窗口（528b）。
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公开(公告)号：KR1020100106716A
公开(公告)日：2010-10-04
申请号：KR1020090024812
申请日：2009-03-24
Applicant: 한국표준과학연구원
IPC: H01L21/66
Abstract: PURPOSE: A precursor vapor purity measuring device for semiconductor manufacturing process and a method thereof, are provided to appropriately select various raw material according to the characteristic of semiconductor manufacturing process by using vapor phase purity of vapor pressure and chemical material. CONSTITUTION: A first valve is opened and a main pump is operated to generate the base pressure(S100). The vapor of the sample is induced into a pressure measuring unit by closing the first valve and opening the second valve(S200). The saturated vapor pressure of precursor is measured by the pressure measuring unit(S300).
Abstract translation: 目的：提供一种用于半导体制造工艺的前体蒸汽纯度测量装置及其方法，其通过使用蒸汽压的气相纯度和化学材料，根据半导体制造工艺的特性适当地选择各种原料。 构成：打开第一个阀，并操作主泵以产生基础压力（S100）。 通过关闭第一阀并打开第二阀，将样品的蒸气引入压力测量单元（S200）。 通过压力测量单元测量前体的饱和蒸气压（S300）。
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公开(公告)号：KR1020090062886A
公开(公告)日：2009-06-17
申请号：KR1020070130359
申请日：2007-12-13
Applicant: 한국표준과학연구원
IPC: H01L21/205 , H01L21/02
CPC classification number: H01J37/32917 , H01L22/34
Abstract: An anti-plasma evaluation method is provided to maintain a constant plasma density in a chamber by controlling the power of the plasma generator based on the plasma density. A process of manufacturing a specimen is performed(P1). A withstand voltage of the manufactured specimen is measured by performing an initial withstand voltage measurement process(P2). An operation condition of the plasma generating chamber is set to an experiment environment(P3). The specimen is positioned on the set chamber. The anti-plasma experiment process is performed by exposing the specimen to the plasma(P4). The withstand voltage of the specimen is measured(P5). The measured second withstand voltage value is compared with the initial withstand measurement value(P6).
Abstract translation: 提供了一种抗等离子体评估方法，通过基于等离子体密度控制等离子体发生器的功率来维持腔室中恒定的等离子体密度。 进行试样的制造工序（P1）。 通过进行初始耐受电压测量处理（P2）来测量制造的试样的耐压。 将等离子体产生室的操作条件设定为实验环境（P3）。 试样位于固定室上。 通过将样品暴露于等离子体（P4）来进行抗等离子体实验过程。 测量样品的耐受电压（P5）。 将测得的第二耐受电压值与初始耐受测量值（P6）进行比较。
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公开(公告)号：KR1020090062885A
公开(公告)日：2009-06-17
申请号：KR1020070130358
申请日：2007-12-13
Applicant: 한국표준과학연구원
Abstract: A coating performance evaluation apparatus is provided to place a plurality of specimens in a tray so as to perform measurement under the same condition. A coating performance evaluation apparatus comprises a chamber(20) with a hollow cavity, a chemical vessel(30) which is installed on the bottom of the chamber to contain etchant solution having acidity, a tray(40) installed in the middle of the chamber, a plasma generating device(50) installed on the top of the chamber, and a heating unit creating high temperature in the chamber. The tray has a through hole so that the coated surface of a specimen(90) is exposed to the etchant gas.
Abstract translation: 提供涂层性能评价装置，将多个试样放置在托盘中，以在相同的条件下进行测量。 涂料性能评价装置包括具有中空腔的腔室（20），安装在腔室底部以容纳具有酸度的蚀刻剂溶液的化学容器（30），安置在腔室中部的托盘（40） ，安装在所述室顶部的等离子体产生装置（50）以及在所述室中产生高温的加热单元。 托盘具有通孔，使得样品（90）的涂覆表面暴露于蚀刻剂气体。
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