公开(公告)号：US20210135049A1

公开(公告)日：2021-05-06

申请号：US16673008

申请日：2019-11-04

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung Lin ,  Chien-Chih Liao ,  Chi-Shiang Hsu ,  De-Shan Kuo ,  Chao-Hsing Chen

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/10

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

公开(公告)号：US10680138B2

公开(公告)日：2020-06-09

申请号：US16384890

申请日：2019-04-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/40

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US10651344B2

公开(公告)日：2020-05-12

申请号：US16246791

申请日：2019-01-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Wen-Hung Chuang ,  Cheng-Lin Lu

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.

公开(公告)号：US20200020829A1

公开(公告)日：2020-01-16

申请号：US16566585

申请日：2019-09-10

Applicant: EPISTAR CORPORATION

Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Jen-Chieh Yu ,  Guan-Wu Chen

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

公开(公告)号：US10529893B2

公开(公告)日：2020-01-07

申请号：US15820002

申请日：2017-11-21

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Chien-Chih Liao ,  Tzu-Yao Tseng ,  Tsun-Kai Ko ,  Chien-Fu Shen

IPC: H01L33/38 ,  H01L33/40

Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.

公开(公告)号：US10374130B2

公开(公告)日：2019-08-06

申请号：US15279149

申请日：2016-09-28

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

IPC: H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62

Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.

公开(公告)号：US10340423B2

公开(公告)日：2019-07-02

申请号：US15874398

申请日：2018-01-18

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/42 ,  H01L33/62 ,  H01L33/46 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

Abstract: A light-emitting device includes a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; and a reflective layer located on the semiconductor structure and comprising an outer edge and a second area; wherein a distance between the first edge and the outer edge is between 0 μm and 10 μm, and the second area of the reflective layer is not less than 80% of the first area of the second semiconductor layer.

公开(公告)号：US10062730B2

公开(公告)日：2018-08-28

申请号：US15196717

申请日：2016-06-29

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L33/08 ,  H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/44 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, comprising a first part formed on the first light-emitting unit or the second light-emitting unit, and a second part conformably formed on the trench covering the bottom portion and sidewalls of the first light-emitting unit and the second light-emitting unit; and an electrical connection, electrically connecting the first light-emitting unit and the second light-emitting unit, comprising a bridging portion formed on the second part of the insulating layer, and only covering a portion of the trench; and a joining portion, extending from the bridging portion and formed on the first part of the insulating layer; wherein the bridging portion is wider than the joining portion in a top view.

公开(公告)号：US20180212126A1

公开(公告)日：2018-07-26

申请号：US15880908

申请日：2018-01-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Jen-Chieh Yu ,  Guan-Wu Chen

IPC: H01L33/62 ,  H01L33/46

CPC classification number: H01L33/405 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y2115/10 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

公开(公告)号：US09997687B2

公开(公告)日：2018-06-12

申请号：US15401710

申请日：2017-01-09

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Han-Min Wu ,  Ye-Ming Hsu ,  Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L27/15 ,  H01L33/42 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/44 ,  H01L33/48 ,  H01L25/075 ,  H01L33/32 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.