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公开(公告)号:US10062730B2
公开(公告)日:2018-08-28
申请号:US15196717
申请日:2016-06-29
Applicant: EPISTAR CORPORATION
Inventor: Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
CPC classification number: H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, comprising a first part formed on the first light-emitting unit or the second light-emitting unit, and a second part conformably formed on the trench covering the bottom portion and sidewalls of the first light-emitting unit and the second light-emitting unit; and an electrical connection, electrically connecting the first light-emitting unit and the second light-emitting unit, comprising a bridging portion formed on the second part of the insulating layer, and only covering a portion of the trench; and a joining portion, extending from the bridging portion and formed on the first part of the insulating layer; wherein the bridging portion is wider than the joining portion in a top view.
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公开(公告)号:US10056525B2
公开(公告)日:2018-08-21
申请号:US15692759
申请日:2017-08-31
Applicant: EPISTAR CORPORATION
Inventor: Chien-Kai Chung , Po-Shun Chiu , Hsin-Ying Wang , De-Shan Kuo , Tsun-Kai Ko , Yu-Ting Huang
CPC classification number: H01L33/22 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382
Abstract: A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3rd side and bended toward the 2nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3rd side is smaller than a distance between the second electrode pad and the 3rd side; wherein an end portion of the first branch includes a first arc bending to the 3rd side and a minimum distance between the first branch and the 1st side is smaller than a minimum distance between the second branch and the 1st side.
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公开(公告)号:US09997687B2
公开(公告)日:2018-06-12
申请号:US15401710
申请日:2017-01-09
Applicant: EPISTAR CORPORATION
Inventor: Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC: H01L33/38 , H01L33/46 , H01L33/60 , H01L33/62 , H01L27/15 , H01L33/42 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/44 , H01L33/48 , H01L25/075 , H01L33/32 , H01L33/40
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.
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公开(公告)号:US09577170B2
公开(公告)日:2017-02-21
申请号:US14663544
申请日:2015-03-20
Applicant: Epistar Corporation
Inventor: Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC: H01L33/62 , H01L27/15 , H01L33/42 , H01L33/46 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/44 , H01L33/48 , H01L33/32 , H01L33/38 , H01L33/40
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.
Abstract translation: 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件,其中所述第一发光元件包括在所述支撑基板上的透明层,所述透明层上的第一发光层叠层,以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线,并且电连接所述电极和所述接触部分之一。
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公开(公告)号:USD770397S1
公开(公告)日:2016-11-01
申请号:US29497225
申请日:2014-07-22
Applicant: EPISTAR CORPORATION
Designer: Hsin-Ying Wang , Chien-Kai Chung , Yu-Ting Huang , Tsun-Kai Ko
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公开(公告)号:US09406719B2
公开(公告)日:2016-08-02
申请号:US14924264
申请日:2015-10-27
Applicant: EPISTAR CORPORATION
Inventor: Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
IPC: H01L33/62 , H01L27/15 , H01L25/075 , H01L33/20 , H01L33/38
CPC classification number: H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit, comprising a bottom portion exposing the substrate; an insulating layer arranged on the trench, conformably covering the bottom portion and sidewalls of the first unit and the second unit; and an electrical connection, conformably covering the insulating layer, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion covers the trench, and the joining portion covers the first unit and the second unit.
Abstract translation: 1.一种发光结构,包括基板; 分别形成在所述基板上的第一单元和第二单元; 第一单元和第二单元之间的沟槽,包括露出衬底的底部; 布置在所述沟槽上的绝缘层,其适配地覆盖所述第一单元和所述第二单元的底部和侧壁; 以及电连接,其顺应地覆盖绝缘层,电连接第一单元和第二单元,并且包括桥接部分和从桥接部分延伸的接合部分,其中桥接部分比接合部分宽,桥接部分覆盖 沟槽和接合部分覆盖第一单元和第二单元。
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公开(公告)号:US20140124819A1
公开(公告)日:2014-05-08
申请号:US13861449
申请日:2013-04-12
Applicant: EPISTAR CORPORATION
Inventor: Ting-Chia Ko , De-Shan Kuo , Chun-Hsiang Tu , Po-Shun Chiu , Chien-Kai Chung , Hui-Chun Yeh , Min-Yen Tsai , Tsun-Kai Ko
IPC: H01L33/42
CPC classification number: H01L33/42 , H01L33/0095 , H01L33/22 , H01L33/40 , H01L33/405
Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.
Abstract translation: 发光器件包括第一半导体层; 以及透明导电氧化物层,其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域,其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层。
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公开(公告)号:US10950652B2
公开(公告)日:2021-03-16
申请号:US16037862
申请日:2018-07-17
Applicant: EPISTAR CORPORATION
Inventor: Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.
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公开(公告)号:US10038029B2
公开(公告)日:2018-07-31
申请号:US14829262
申请日:2015-08-18
Applicant: EPISTAR CORPORATION
Inventor: Chao-Hsing Chen , Schang-Jing Hon , Alexander Chan Wang , Li-Tian Liang , Chin-Yung Fan , Chien-Kai Chung , Min-Hsun Hsieh
IPC: H01L27/15 , H01L25/065 , H01L25/075 , H01L27/32 , H01L33/50 , H01L33/62
Abstract: A light-emitting device includes a growth substrate, a plurality of light-emitting diode units formed on the growth substrate and arranged in a closed loop, an electrode directly formed on the growth substrate, an electrical connection structure formed on the growth substrate and connecting the plurality of light-emitting diode units with the electrode, and a plurality of rectifying diodes connecting to respective nodes of the closed loop.
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公开(公告)号:US09876146B2
公开(公告)日:2018-01-23
申请号:US15256263
申请日:2016-09-02
Applicant: EPISTAR CORPORATION
Inventor: Tsun-Kai Ko , Schang-Jing Hon , Chien-Kai Chung , Hui-Chun Yeh , An-Ju Lin , Chien-Fu Shen , Chen Ou
CPC classification number: H01L33/387 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/382 , H01L33/42 , H01L33/44 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.
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