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    SENSOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
    73.
    发明申请
    SENSOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
    传感器部件及其制造方法

    公开(公告)号：WO02022495A1

    公开(公告)日：2002-03-21

    申请号：PCT/DE2001/003608

    申请日：2001-09-14

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81C1/00626 ,  B81B2201/0292 ,  B81B2203/0338 ,  B81C2201/053 ,  B81C2203/0109

    Abstract: The invention relates to a method for producing a sensor component comprising an electrically conductive longish element, which is held inside a channel in a manner that permits electricity to flow therearound. The inventive method provides that, after depositing an insulation layer onto a supporting layer and after subsequently depositing a coating comprised of at least one electrically conductive layer onto said insulation layer, the coating is etched away until reaching the remaining areas required for forming the longish element and the supply leads thereof while exposing the insulation layer in areas. The invention provides that, after etching, an additional insulation layer (7) is deposited onto the coating (3) and onto the exposed insulation layer (2). A channel (8) is subsequently etched into the insulation layer (2) and into the additional insulation layer (7) while at least partially exposing the longish element (9). The channel is etched in such a manner that the longish element (9) is solely held inside the lateral walls of the channel (8), which are formed by the insulation layers (2) and (7), and passes through the channel in a self-supporting manner.

    Abstract translation: 本发明涉及一种用于围绕它被安装在一个信道的，导电的，细长元件的制造流程的传感器装置的方法，其中，沉积在支撑层上的绝缘层和一组所述绝缘层上由至少一个导电层涂布的后续沉积之后 该涂层被蚀刻掉下降到需要形成根据第方式曝光，绝缘层的细长构件和它的供给线其余区域。 根据本发明，在涂层上蚀刻（3）和暴露的绝缘层（2）具有一个额外的绝缘层（7）沉积，并随后进入绝缘层（2）和与所述细长元件的至少部分曝光的额外的绝缘层（7）后（9 ），信道（8）在（9）安装在所述细长元件仅形成以这样的方式被蚀刻的（通过通道的绝缘层2）和（7）的侧壁（8）并通过悬臂式的通道。

    METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT, AND A COMPONENT PRODUCED ACCORDING TO SAID METHOD
    74.
    发明申请
    METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT, AND A COMPONENT PRODUCED ACCORDING TO SAID METHOD 审中-公开
    用于生产微机械结构和直线到组件MADE

    公开(公告)号：WO0158803A3

    公开(公告)日：2002-03-14

    申请号：PCT/DE0004673

    申请日：2000-12-28

    Applicant: BOSCH GMBH ROBERT ,  FISCHER FRANK ,  HEIN PETER ,  GRAF ECKHARD

    Inventor： FISCHER FRANK ,  HEIN PETER ,  GRAF ECKHARD

    IPC: B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84

    CPC classification number: B81C1/00801 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81C2201/0109 ,  B81C2201/053 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    Abstract: The invention relates to a method for producing a micromechanical component (100) that comprises at least one cavity (110) and one functional element (12) at least partially disposed in said cavity (110) and/or one functional layer (13a, 13b, 13c) at least partially disposed therein. The invention further relates to a micromechanical component (100) produced according to the inventive method. The aim of the invention is to reduce the production costs for such a micromechanical component. To this end, the functional element (12) and/or the functional layer (13a, 13b, 13c) is provided with a first protective layer (41; 71) at least in a zone that adjoins a first sacrificial coating (52) that temporarily occupies the space of the cavity (22) subsequently formed in one or more etching steps. The material of the first protective layer (41) is selected in such a manner that at least one etching method and/or etching agent etching or dissolving the first sacrificial coating (52) does substantially not corrode the first protective layer (41; 71) or corrodes it only at a reduced etching rate in relation to the first sacrificial coating (52).

    Abstract translation: 本发明涉及一种用于制造微机械部件（100）的方法，设置有至少一个腔（110）和一个至少在所述腔内部分（110）的功能元件（12）和/或至少部分地设置在其中功能层（13A， 13B，13C），以及根据根据有关独立权利要求的前序部分的方法（100）制备的微机械部件。 以降低制造成本，功能元件（12）和/或所述功能层（13A，13B，13C）是相邻于第一牺牲层（52）的区域中的至少该暂时形成在下面的一个或多个蚀刻步骤的空间 空腔（22）占据，其中第一保护层（41; 71）提供（图4;图7），其中，所述第一保护层（41）的材料被选择为使得至少一个第一牺牲层（52）或腐蚀性 。解析度蚀刻和/或蚀刻介质，所述第一保护层（41; 71）基本上仅与相对于所述第一牺牲层（52）蚀刻速度降低的接合或没有。

    마이크로 전기 기계 구조 칩의 다이싱 방법
    78.
    发明公开
    마이크로 전기 기계 구조 칩의 다이싱 방법 失效
    微电子机械系统芯片的定位方法

    公开(公告)号：KR1020040004769A

    公开(公告)日：2004-01-16

    申请号：KR1020020038792

    申请日：2002-07-05

    Applicant: 삼성전기주식회사

    Inventor： 이현기 ,  정성천 ,  강준석 ,  윤상기

    IPC: H01L21/78

    CPC classification number: B81C1/00888 ,  B81C1/00896 ,  B81C2201/053

    Abstract: PURPOSE: A dicing method of an MEMS(Micro Electro-Mechanical Systems) chip is provided to be capable of improving yield and productivity by preventing the damage of a micro structure using photoresist or filling material under a dicing process. CONSTITUTION: After discharging liquid photoresist on a wafer(1) having a micro structure(3), a photoresist coating process is carried out on the entire surface of the wafer by using a spin coater. A predetermined heat treatment is carried out at the resultant structure for removing the moisture of the photoresist. Then, a dicing process is carried out at the resultant structure. The photoresist is removed from the resultant structure. At this time, the photoresist is used as the protecting material for the micro structure. Preferably, a multi-step heat treatment is used as the predetermined heat treatment.

    Abstract translation: 目的：提供一种MEMS（微机电系统）芯片的切割方法，其能够通过防止在切割工艺下使用光致抗蚀剂或填充材料的微结构的损坏来提高产量和生产率。 构成：在具有微结构（3）的晶片（1）上排出液体光致抗蚀剂之后，通过使用旋转涂布机在晶片的整个表面上进行光致抗蚀剂涂覆处理。 在所得到的结构中进行预定的热处理以除去光致抗蚀剂的水分。 然后，在所得结构下进行切割处理。 从所得结构中除去光致抗蚀剂。 此时，光致抗蚀剂用作微结构的保护材料。 优选地，使用多步热处理作为预定的热处理。

    단결정 실리콘 웨이퍼 한 장를 이용한 정전형 수직구동기의 제조 방법
    79.
    发明公开
    단결정 실리콘 웨이퍼 한 장를 이용한 정전형 수직구동기의 제조 방법 有权
    通过使用一个单晶硅陶瓷制造静电垂直致动器的方法

    公开(公告)号：KR1020020085211A

    公开(公告)日：2002-11-16

    申请号：KR1020010024607

    申请日：2001-05-07

    Applicant: 조동일

    Inventor： 조동일 ,  김종팔

    IPC: H01L21/027

    CPC classification number: B81C1/00396 ,  B81B2203/0136 ,  B81C1/00595 ,  B81C2201/053

    Abstract: PURPOSE: A method for fabricating an electrostatic vertical actuator by using one single crystalline silicon wafer is provided to for the electrostatic vertical actuator by using one single crystalline silicon wafer with a MEMS(Micro Electro Mechanical System) method. CONSTITUTION: The first silicon etch mask is deposited on a silicon wafer. A photoresist layer pattern is formed on the silicon etch mask by performing photo-lithography process. The second silicon etch mask is deposited and patterned thereon. The first silicon etch process is etched. The second etch mask is removed. The second silicon etch process is performed. A protective layer is formed thereon. The third silicon etch process is performed. A sacrificial layer is etched by using an alkali aqueous solution. The fourth silicon etch process is performed. A stepped structure is completed by removing the first silicon etch mask and the protective layer. An upper electrode and a lower electrode of a vertical actuator are formed thereon. A thermal oxide layer is deposited on the silicon wafer and a polysilicon is deposited thereon. The polysilicon of a bottom portion is etched by using an upper portion metal as an etch mask.

    Abstract translation: 目的：通过使用具有MEMS（微机电系统）的一个单晶硅晶片，为静电垂直致动器提供使用一个单晶硅晶片制造静电垂直致动器的方法。 构成：第一硅蚀刻掩模沉积在硅晶片上。 通过进行光刻工艺在硅蚀刻掩模上形成光致抗蚀剂图案。 在其上沉积和图案化第二硅蚀刻掩模。 蚀刻第一硅蚀刻工艺。 第二蚀刻掩模被去除。 执行第二硅蚀刻工艺。 在其上形成保护层。 执行第三硅蚀刻工艺。 通过使用碱性水溶液蚀刻牺牲层。 执行第四硅蚀刻工艺。 通过去除第一硅蚀刻掩模和保护层来完成阶梯式结构。 在其上形成垂直致动器的上电极和下电极。 在硅晶片上沉积热氧化物层，并且在其上沉积多晶硅。 通过使用上部金属作为蚀刻掩模来蚀刻底部的多晶硅。

    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL
    80.
    发明申请
    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL 审中-公开
    在电介质和有机材料之间实现良好粘合的方法

    公开(公告)号：WO2015050688A1

    公开(公告)日：2015-04-09

    申请号：PCT/US2014/055581

    申请日：2014-09-15

    Applicant: CAVENDISH KINETICS, INC

    Inventor： RENAULT, Mickael

    IPC: B81C1/00

    CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

    Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

    Abstract translation: 本发明一般涉及用于形成MEMS器件的方法和通过该方法形成的MEMS器件。 当形成MEMS器件时，牺牲材料沉积在腔体内的开关元件周围。 牺牲材料最终被去除以释放空腔中的开关元件。 开关元件在其上具有薄的电介质层，以防止蚀刻剂与开关元件的导电材料的相互作用。 在制造期间，介电层沉积在牺牲材料上。 为了确保电介质层和牺牲材料之间的良好粘合性，在沉积其上的电介质层之前，将富硅氧化硅层沉积到牺牲材料上。

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