Abstract:
A semiconductor device having a Schottky barrier junction formed in the bottom of a polygonal recess on a surface of a semiconductor substrate comprises an undercut in the recess beneath an insulating mask formed on the substrate, and a metal passing through the mask and extending to the bottom of the recess for forming said junction. The undercut provides an enclosed spacing encircling the junction portion of said metal and said semiconductor, thereby improving the backward breakdown voltage characteristic therein.
Abstract:
An AGC amplifier having a Darlington pair as a noise gate circuit for preventing the development of unwanted AGC outputs due to noise pulses. The Darlington pair develops a larger overdrive with the same base current than if a single transistor is employed, so a longer storage time of the transistors results, lengthening the gate period. This makes available an AGC amplifier circuit with a noise gate circuit whose gate period is longer without using a capacitor, thereby providing a convenient means for application to monolithic integrated circuits.
Abstract:
Apparatus for generating microwaves comprising a cavity resonator, a microwave generating element and a solid-state variable reactance element such as a variable capacitance diode, both of these elements being disposed within the cavity resonator. It is possible to obtain a controlled and/or a modulated microwave output from the apparatus by varying the reactance of and/or by supplying a modulating signal to the variable reactance element.
Abstract:
A MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE HAVING A SOURCE AND DRAIN DOPED OPPOSITE CONDUCTION TYPE TO THE SUBSTRATE AND A GATE ON AN INSULATOR FILM COATED ON A SURFACE PORTION OF THE SEMICONDUCTOR SUBSTRATE BETWEEN BOTH DOPED REGIONS; FORMING A DOPED LAYER PRELIMINARILY ON THE WHOLE SURFACE OF SUBSTRATE, ETCHING THESE LAYERS SO AS TO FORM THE SOURCE AND DRAIN REGIONS, AND FORMING A GATE INSULATOR FILM ON THE PORTIONS WHERE THE DOPED LAYERS ARE REMOVED BY ETCHING, THEREBY FORMING THE GATE ELECTRODE ON THESE PORTIONS. BY THESE STEPS A SEMICONDUCTOR DEVICE HAVING A HIGH MUTUAL CONDUCTANCE AND A LOW INPUT ELECTRIC CAPACITANCE CAN BE OBTAINED. THIS METHOD IS APPLICABLE TO THE MANUFACTURE OF ACTIVE ELEMENTS SUCH AS TRANISTORS AND FURTHER INTEGRATED CIRCUIT ELEMENT.
Abstract:
In a semiconductor device a metal electrode film formed by an evaporated gold-chromium alloy containing 3 percent to 13 percent by weight of chromium can not only make low ohmic contact with the semiconductor substrate but can be connected to it mechanically firmly. The lead-tin eutectic alloy can be soldered satisfactorily to the metal electrode film without causing erosion even if the electrode film is dipped in a fused solder solution. The semiconductor device with such a gold-chromium alloy film has great industrial merit since the manufacturing steps, particularly the connection of external electrode lead wires, are greatly simplified.
Abstract:
A defrosting controller for electric refrigerators which is operated under control of a first transistor adapted for triggering a silicon-controlled rectifier depending upon the result detected by a temperature detector in the freezer of the refrigerator and under control of a second transistor for keeping the first transistor in one state during the defrosting operation so that the defrosting operation is automatically stopped as soon as the temperature within the freezer reaches a predetermined temperature after starting the defrosting operation. Thus, frost accumulated within the freezing compartment can completely be removed and an unnecessary temperature rise within the freezing and provisions compartments can be prevented.
Abstract:
This specification discloses a color television receiver wherein the white balance controlling reference color illumination occurring in a portion of the fluorescent screen is passed through three primary-color filters so as to be separated into ''''red,'''' ''''green'''' and ''''blue'''' light rays which are irradiated onto photosensitive elements so that variations in the filtered light rays are converted to electrical quantities to be fed back to the video circuit, thereby directly or indirectly controlling the color reproduction signal voltage to be applied to the color picture tube.