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公开(公告)号：KR1020150054383A
公开(公告)日：2015-05-20
申请号：KR1020130136763
申请日：2013-11-12
Applicant: 삼성전자주식회사
Abstract: 본발명의실시예에따른반도체발광소자는, 제1 도전형반도체베이스층, 제1 도전형반도체베이스층상에서로이격되어형성되며, 각각제1 도전형반도체코어, 활성층및 제2 도전형반도체층을포함하는복수의나노발광구조물들, 및복수의나노발광구조물들의사이에위치하는굴절부및 복수의나노발광구조물들사이에충진되며굴절부를둘러싸는커버부를포함하는충진층을포함한다.
Abstract translation: 根据本发明实施例的半导体发光器件包括第一导电半导体基底层，多个纳米发光结构，其分开形成在第一导电半导体基底层上并且包括第一导电半导体芯，有源层和第二导电半导体基底层 导电半导体层，以及填充层，其包括位于纳米发光结构之间的折射部分和填充在纳米发光结构之间并且包围折射部分的覆盖部分。
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公开(公告)号：KR1020150043152A
公开(公告)日：2015-04-22
申请号：KR1020130122225
申请日：2013-10-14
Applicant: 삼성전자주식회사
CPC classification number: H01L33/24 , H01L33/08 , H01L33/18 , H01L33/385
Abstract: 본발명의일 측면은, 제1 도전형반도체로이루어진베이스층과, 상기베이스층상에형성되며, 상기베이스층의일부영역이노출된복수의개구를갖는절연막과, 상기베이스층의노출된영역각각에형성되며, 제1 도전형반도체로이루어진나노코어와상기나노코어의측면에순차적으로형성된활성층과제2 도전형반도체층을갖는복수의나노발광구조물을포함하며, 상기나노발광구조물의상면은비평탄한면을가지며, 구동시에발광이일어나지않도록적어도제2 도전형반도체층이형성되지않은부분을갖는나노구조반도체발광소자를제공한다.
Abstract translation: 本发明的一个方面提供了一种纳米结构半导体发光器件，其包括：基底层，由第一导电半导体构成，绝缘层形成在基底层上并具有多个开口部分以暴露部分 基底层的区域和形成在基底层的每个曝光区域上的多个纳米发光结构，并且包括由第一导电半导体构成的纳米芯，以及连续地形成的有源层和第二导电半导体层 形成在纳米芯的一侧。 纳米发光结构的上侧具有非平坦表面和至少没有第二导电半导体层的区域，以防止驱动过程中的发光。
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公开(公告)号：KR1020140096980A
公开(公告)日：2014-08-06
申请号：KR1020130164523
申请日：2013-12-26
Applicant: 삼성전자주식회사
CPC classification number: H01L33/20 , H01L33/005 , H01L33/08 , H01L33/18 , H01L33/24
Abstract: One aspect of the present invention provides a method of manufacturing nanostructure semiconductor light emitting device which includes a step of providing a base layer made of a first conductivity type semiconductor, a step of forming a mask including an etch stop layer on the base layer, a step of forming multiple openings exposed to the base layer by the mask, a step of forming multiple nanocores by growing the first conductivity type semiconductor in the exposed region of the base layer to fill the openings, a step of partly removing the mask by using the etch stop layer to expose the side of the nanocores, and a step of successively growing the active layer and a second conductivity type semiconductor layer on the surface of the nanocores.
Abstract translation: 本发明的一个方面提供一种制造纳米结构半导体发光器件的方法，其包括提供由第一导电类型半导体制成的基底层的步骤，在基底层上形成包括蚀刻停止层的掩模的步骤， 通过掩模形成暴露于基底层的多个开口的步骤，通过在基底层的暴露区域中生长第一导电类型半导体以填充开口来形成多个纳米孔的步骤，通过使用 蚀刻停止层以暴露纳米孔的一侧，以及在纳米孔的表面上连续生长有源层和第二导电类型半导体层的步骤。
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公开(公告)号：KR1020140096979A
公开(公告)日：2014-08-06
申请号：KR1020130164522
申请日：2013-12-26
Applicant: 삼성전자주식회사
Abstract: One aspect of the present invention provides a nanostructure semiconductor light emitting device which includes a base layer made of a first conductivity type semiconductor, a first insulating layer which is formed on the base layer and has multiple first openings exposed to a part of the base layer, multiple nanocores which are formed in the exposed region of the base layer, respectively, and are made of the first conductivity type semiconductor, an active layer which is formed on the surface of the nanocores which is located higher than the first insulating layer, a second insulating layer which is formed on the first insulating layer and has multiple second openings which surround the active layer formed on its surface and the nanocores, and a second conductivity type semiconductor layer formed on the surface of the active layer which is located higher than the second insulating layer.
Abstract translation: 本发明的一个方面提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体制成的基极层，第一绝缘层，其形成在基底层上并具有暴露于基底层的一部分的多个第一开口 分别形成在基底层的露出区域并由第一导电型半导体形成的多个纳米孔，形成在位于高于第一绝缘层的纳米孔的表面上的有源层， 第二绝缘层，其形成在第一绝缘层上并且具有围绕形成在其表面上的有源层和纳米孔的多个第二开口，以及形成在有源层表面上的第二导电类型半导体层，该第二导电类型半导体层位于高于 第二绝缘层。
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公开(公告)号：KR1020140077614A
公开(公告)日：2014-06-24
申请号：KR1020120146618
申请日：2012-12-14
Applicant: 삼성전자주식회사
CPC classification number: H01L33/16 , H01L27/153 , H01L33/0054 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A three-dimensional light emitting device comprises a semiconductor core which is vertically grown on one surface and doped with a first conductivity type; an active layer formed to surround the surface of the semiconductor core; and multiple three-dimensional light emitting structures formed to surround the surface of the active layer, including a first semiconductor layer doped with a second conductivity type, and formed apart from each other. The three-dimensional light emitting device may comprise a porous insulating layer formed between a lower corner portion of the light emitting structures and formed to expose the upper end part of the light emitting structures; a first electrode electrically connected to the first semiconductor layer ; and a second electrode electrically connected to the semiconductor core.
Abstract translation: 三维发光器件包括在一个表面上垂直生长并掺杂有第一导电类型的半导体芯; 形成为包围半导体芯的表面的有源层; 以及形成为围绕有源层的表面的多个三维发光结构，包括掺杂有第二导电类型的第一半导体层，并且彼此分开形成。 三维发光器件可以包括形成在发光结构的下角部分之间并且被形成为暴露发光结构的上端部分的多孔绝缘层; 电连接到第一半导体层的第一电极; 和与半导体芯电连接的第二电极。
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Patent Agency Ranking
公开(公告)号：KR101285164B1
公开(公告)日：2013-07-11
申请号：KR1020110105342
申请日：2011-10-14
Applicant: 삼성전자주식회사
IPC: H01L33/22
Abstract: 본 발명의 일 실시예에 따른 반도체 발광소자는, 제1 도전형 반도체층 상에 형성된 유전체 패턴이 제거된 영역에서 재성장 반도체층의 일부가 재성장됨으로써 절연체 마스크 계면과 반도체층 사이의 계면에서 전류가 누설되는 것을 차단할 수 있다. 또한, 재성장 반도체층의 피라미드 사면과 바닥면 상에 형성되는 활성층의 두께 및 인듐(In)의 조성비를 달리하여 다양한 파장대의 빛을 발생시킬 수 있으며, 발광소자 전체의 발광 파장을 조절할 수 있다.
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公开(公告)号：KR101258583B1
公开(公告)日：2013-05-02
申请号：KR1020110108114
申请日：2011-10-21
Applicant: 삼성전자주식회사
CPC classification number: H01L33/18 , H01L33/007 , H01L33/08 , H01L33/24 , H01L33/385 , H01L33/44
Abstract: PURPOSE: A nanorod light emitting device and a method for manufacturing the same are provided to form an upper current injection structure by using a multilayered structure of an electrode and an insulating layer, and to improve current injection efficiency. CONSTITUTION: A mask layer(17) including a through hole(16) is formed on a nitride semiconductor layer(15). A light emitting nanorod(26) including a nanocore(20), a light emitting layer(23), and a semiconductor layer(25) is formed on the mask layer. A first filling layer(30) is formed on the mask layer between the light emitting nanorods. A first conductive layer(33) is formed on the semiconductor layer and the first filling layer. A second filling layer(35) is formed on the first conductive layer between the light emitting nanorods. A first electrode(37) is formed on the second filling layer and the first conductive layer.
Abstract translation: 目的：提供纳米棒发光器件及其制造方法，以通过使用电极和绝缘层的多层结构形成上电流注入结构，并提高电流注入效率。 构成：在氮化物半导体层（15）上形成包括通孔（16）的掩模层（17）。 在掩模层上形成包括纳米孔（20），发光层（23）和半导体层（25）的发光纳米棒（26）。 在发光纳米棒之间的掩模层上形成第一填充层（30）。 第一导电层（33）形成在半导体层和第一填充层上。 在发光纳米棒之间的第一导电层上形成第二填充层（35）。 第一电极（37）形成在第二填充层和第一导电层上。
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公开(公告)号：KR1020120067157A
公开(公告)日：2012-06-25
申请号：KR1020100128611
申请日：2010-12-15
Applicant: 삼성전자주식회사
CPC classification number: H01L33/16 , B82Y20/00 , H01L21/02601 , H01L33/04 , H01L2933/0058
Abstract: PURPOSE: A light emitting device and a manufacturing method thereof are provided to easily increase a light emitting amount per unit area by forming a number of vertical light emitting structures in a narrow region. CONSTITUTION: A semiconductor layer(200) is formed on a substrate(100). An insulating layer(250) is formed on the semiconductor layer. One or more vertical light emitting structures(LE1) are located on the insulating layer. The vertical light emitting structure comprises a first conductive semiconductor(300), an active layer(310), and a second conductive semiconductor(320). A nano particle is formed in at least one of the first conductive type semiconductor, the active layer, and the second conductive semiconductor.
Abstract translation: 目的：提供一种发光器件及其制造方法，通过在狭窄的区域中形成多个垂直发光结构，容易地增加每单位面积的发光量。 构成：半导体层（200）形成在基板（100）上。 绝缘层（250）形成在半导体层上。 一个或多个垂直发光结构（LE1）位于绝缘层上。 垂直发光结构包括第一导电半导体（300），有源层（310）和第二导电半导体（320）。 在第一导电类型半导体，有源层和第二导电半导体中的至少一个中形成纳米颗粒。
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公开(公告)号：KR1020120055388A
公开(公告)日：2012-05-31
申请号：KR1020100117107
申请日：2010-11-23
Applicant: 삼성전자주식회사
IPC: H01L33/16 , B82Y20/00 , H01L21/02 , H01L33/08 , H01L33/04 , H01L33/14 , H01L33/40 , H01L33/42 , H01L33/32
CPC classification number: H01L33/16 , B82Y20/00 , H01L21/02603 , H01L33/04 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/42
Abstract: PURPOSE: A nano rod light emitting device is provided to reduce leakage current by employing a nano insertion layer on a lower core part in a core-cell type light emitting structure. CONSTITUTION: A nano insertion layer(142) is formed within a penetration hole. A semiconductor nano core(144) is grown from the nano insertion layer to the outside of the penetration hole. An active layer(146) is formed by covering the surface of the semiconductor nano core. A second semiconductor layer(148) is formed by covering the surface of the active layer. A first electrode and a second electrode are respectively and electrically connected to the semiconductor nano core and the second semiconductor layer.
Abstract translation: 目的：提供一种纳米棒状发光装置，通过在芯电池型发光结构的下芯部上采用纳米插入层来减少泄漏电流。 构成：在穿透孔内形成纳米插入层（142）。 半导体纳米芯（144）从纳米插入层生长到穿透孔的外部。 通过覆盖半导体纳米芯的表面形成有源层（146）。 通过覆盖有源层的表面形成第二半导体层（148）。 第一电极和第二电极分别电连接到半导体纳米芯和第二半导体层。
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公开(公告)号：KR1020120052651A
公开(公告)日：2012-05-24
申请号：KR1020100113908
申请日：2010-11-16
Applicant: 삼성전자주식회사
CPC classification number: H01L33/16 , B82Y20/00 , H01L21/02603 , H01L33/04 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/42
Abstract: PURPOSE: A nano rod light emitting device is provide to control the shape of a tip part of a light emitting nano rod which has a core-shell structure, thereby emitting multi frequency light. CONSTITUTION: A mask layer comprises a penetration hole. A nano core(141) is vertically grown above the mask layer through the penetration hole. The nano core includes a rod part(R) which includes a rod surface(141a) and a tip part(T) which includes one or more surfaces(141b,141c). An active layer(143) emits light from electron-hole recombination. A second semiconductor layer(145) is formed by covering the surface of the active layer.
Abstract translation: 目的：提供纳米棒状发光装置，以控制具有核 - 壳结构的发光纳米棒的尖端部分的形状，从而发射多频光。 构成：掩模层包括穿透孔。 通过穿透孔将纳米芯（141）垂直地生长在掩模层上方。 纳米芯包括棒部分（R），其包括杆表面（141a）和包括一个或多个表面（141b，141c）的尖端部分（T）。 有源层（143）从电子 - 空穴复合发射光。 通过覆盖有源层的表面形成第二半导体层（145）。
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