公开(公告)号：KR1019970030352A

公开(公告)日：1997-06-26

申请号：KR1019950042596

申请日：1995-11-21

Applicant: 한국전자통신연구원

Inventor： 양전욱 ,  오응기 ,  박병선 ,  박철순 ,  편광의

IPC: H01L21/28

Abstract: 본 발명은 T형 게이트 전극의 형성방법에 관한 것으로서, 반도체 기판 상의 소정 부분에 미세 게이트 금속을 형성하고, 반도체 기판 및 미세 게이트 금속상에 절연막과 평탄화막을 형성한 후 절연막이 노출되도록 평탄화막을 에치백하고, 절연막의 노출된 부분을 등방성으로 식각하여 평탄화막의 역경사를 이루는 측면을 노출시키고 저저항금속을 방향성을 갖도록 증착한다. 따라서, 광학적 기소그라피 공정으로 쉽게 T-형상의 게이트를 형성할 수 있으므로 생산성을 향상시킬 수 있으며, 미세 게이트 패턴 상에 중첩되는 저저항금속을 자기 정렬되게 형성할 수 있다.

公开(公告)号：KR100066827B1

公开(公告)日：1993-10-23

申请号：KR1019900010772

申请日：1990-07-16

Applicant: 한국전자통신연구원

Inventor： 편광의 ,  박형무

IPC: H01L21/335

公开(公告)号：KR100057478B1

公开(公告)日：1992-12-21

申请号：KR1019880016680

申请日：1988-12-14

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 박형무 ,  편광의

IPC: H01L21/265

公开(公告)号：KR1019900010908A

公开(公告)日：1990-07-11

申请号：KR1019880016771

申请日：1988-12-14

Applicant: 주식회사 케이티 ,  한국전자통신연구원

Inventor： 박형무 ,  편광의

IPC: H01L21/00

公开(公告)号：KR100367095B1

公开(公告)日：2003-01-06

申请号：KR1019990052113

申请日：1999-11-23

Applicant: 한국전자통신연구원

Inventor： 이명현 ,  이형종 ,  한선규 ,  민유홍 ,  편광의

IPC: H04B10/29

Abstract: PURPOSE: An electric optical polymer for a wavelength division multiplexing optical communication network, a high speed tunable selecting filter using multi-grating and their operating method are provided to enable implementation of a dense wavelength division multiplexing based optical communication and be used for an optical information storing device technique utilizing an optical refraction. CONSTITUTION: An optical waveguide(103) collects a plurality of lights made incident to a single mode. A Bragg grating unit passes only a light of a desired wavelength among the plurality of lights made incident along the optical waveguide(103) and reflects the remaining lights along the optical waveguide(103) to emit them externally. A proceeding waveform electrode(105) changes a region of a Bragg grating reflection wave by an electro-optical effect and transmits or reflects a specific wavelength selectively. A TEC(106) tunes the wavelength of the whole bragg reflection wave by using a heat optical effect of a polymer.

Abstract translation: 目的：提供用于波分复用光通信网络的电光聚合物，使用多光栅的高速可调选择滤波器及其操作方法，以实现基于密集波分复用的光通信并用于光信息 利用光折射的存储装置技术。 构成：光波导（103）收集多个入射到单模的光。 布拉格光栅单元仅通过沿着光波导（103）入射的多个光中的期望波长的光，并沿着光波导（103）反射剩余的光以在外部发射它们。 前进波形电极（105）通过电光效应改变布拉格光栅反射波的区域，并选择性地透射或反射特定波长。 TEC（106）通过使用聚合物的热光学效应来调谐整个布拉格反射波的波长。

公开(公告)号：KR1020010057801A

公开(公告)日：2001-07-05

申请号：KR1019990061211

申请日：1999-12-23

Applicant: 한국전자통신연구원

Inventor： 민유홍 ,  이명현 ,  편광의

IPC: G02F1/1343

Abstract: PURPOSE: A method for fabricating a progressive wave coplanar electrode of a high speed polymer mach-gender optical modulator is to simplify a design of an electrode and reduce a DC-drift and an operating voltage. CONSTITUTION: A high speed polymer optical modulator having a progressive wave coplanar electrode comprises a channel light guide(1), a progressive coplanar electrode(3), an incline plane(2) and an input/output unit. The progressive wave coplanar electrode is formed by etching the channel light guide in order to increase an overlap constant of an electric field and a guide mode. The coplanar electrodes(6,9) are crossed over the incline plane. The input/output unit inputs/outputs a microwave through a coupler having a coplanar structure. The light guide is implemented with a mach-gender interferometer. A mode of the light guide is identical to that of an optical fiber.

Abstract translation: 目的：制造高速聚合物机械性别光学调制器的行波共面电极的方法是简化电极的设计并降低直流漂移和工作电压。 构成：具有行波共面电极的高速聚合物光调制器包括通道光导（1），渐进式共面电极（3），倾斜平面（2）和输入/输出单元。 通过蚀刻通道光导形成渐进波共面电极，以增加电场和引导模式的重叠常数。 共面电极（6,9）在倾斜平面上交叉。 输入/输出单元通过具有共面结构的耦合器输入/输出微波。 光导通过马赫 - 性别干涉仪实现。 光导的模式与光纤相同。

公开(公告)号：KR1020010047754A

公开(公告)日：2001-06-15

申请号：KR1019990052113

申请日：1999-11-23

Applicant: 한국전자통신연구원

Inventor： 이명현 ,  이형종 ,  한선규 ,  민유홍 ,  편광의

IPC: H04B10/29

CPC classification number: H01S5/141 ,  H04J14/02

Abstract: PURPOSE: An electric optical polymer for a wavelength division multiplexing optical communication network, a high speed tunable selecting filter using multi-grating and their operating method are provided to enable implementation of a dense wavelength division multiplexing based optical communication and be used for an optical information storing device technique utilizing an optical refraction. CONSTITUTION: An optical waveguide(103) collects a plurality of lights made incident to a single mode. A Bragg grating unit passes only a light of a desired wavelength among the plurality of lights made incident along the optical waveguide(103) and reflects the remaining lights along the optical waveguide(103) to emit them externally. A proceeding waveform electrode(105) changes a region of a Bragg grating reflection wave by an electro-optical effect and transmits or reflects a specific wavelength selectively. A TEC(106) tunes the wavelength of the whole bragg reflection wave by using a heat optical effect of a polymer.

Abstract translation: 目的：提供一种用于波分复用光通信网络的电光聚合物，使用多光栅的高速可调选择滤波器及其操作方法，以实现基于密集波分复用的光通信并用于光信息 利用光学折射的存储装置技术。 构成：光波导（103）收集入射到单一模式的多个灯。 布拉格光栅单元仅沿着光波导（103）入射的多个光中仅通过期望波长的光，并且沿着光波导（103）反射剩余的光以在外部发射它们。 前进波形电极（105）通过电光效应改变布拉格光栅反射波的区域，并选择性地传输或反射特定波长。 TEC（106）通过使用聚合物的热光学效应调谐整个布拉格反射波的波长。

公开(公告)号：KR1020010004403A

公开(公告)日：2001-01-15

申请号：KR1019990025034

申请日：1999-06-28

Applicant: 한국전자통신연구원

Inventor： 박경현 ,  조호성 ,  김상배 ,  편광의

IPC: G02B6/12

Abstract: PURPOSE: A device for detecting optical waveguide of concentrative optical type is provided to optical waveguide detect array LD(laser diode) as a next generation WDM(wavelength division multiplexing). CONSTITUTION: The device for detecting waveguide(504) is formed by a laser diode(501), a plate optical waveguide(505), and a space division multi-channel optical detector(507). The device is assembled on a thermoelement. Optical output of the laser diode is concentrated in an optical fiber(503) by a lens(502). Herein, error in transmitting center wave length of a grating optical filter(506) is attenuated by properly selecting the optical waveguide. By change in temperature to adjust optical wavelength of the laser diode, rear output of the laser diode is concentrated on the plate optical waveguide.

Abstract translation: 目的：提供一种用于检测集中光学类型的光波导的装置，作为下一代WDM（波分复用）​​的光波导检测阵列LD（激光二极管）。 构成：用于检测波导（504）的装置由激光二极管（501），平板光波导（505）和空分多通道光检测器（507）形成。 该装置组装在热电偶上。 激光二极管的光输出通过透镜（502）集中在光纤（503）中。 这里，通过适当选择光波导来衰减光栅滤光器（506）的透射中心波长的误差。 通过温度变化来调整激光二极管的光波长，激光二极管的后端输出集中在平板光波导上。

公开(公告)号：KR100270581B1

公开(公告)日：2000-11-01

申请号：KR1019970066546

申请日：1997-12-06

Applicant: 한국전자통신연구원

Inventor： 김민건 ,  편광의 ,  이창석 ,  이재진

IPC: H01L29/70

CPC classification number: G05F3/247 ,  G05F3/245

Abstract: PURPOSE: A bias stabilizing circuit is provided to be capable of minimizing the current variations of amplification transistors caused by variations of device parameters which occur during the manufacturing of high-frequency integrated circuits, and caused by variations of supply voltage and temperature. CONSTITUTION: The bias stabilization circuit according to the present invention has an enhancement type reference voltage generation transistor(441) for generating a reference voltage having an amplification transistor(401), a constant current source to flow a constant current via the transistor(441) and a level shift and feedback circuit to shift voltage level of the constant current source and supply to gates of the transistors(441,401). That is, the constant current source is connected between the supply voltage Vcc and a first connection node K1, in which the constant current source has a depletion type transistor(443) and a resistor(442) connected in series thereto and the gate of the depletion type transistor(443) is connected to a node. The drain and source of the transistor(441) are connected between the first connection node and a ground. A level shift and feedback circuit is connected between a power supply and the ground and has a common drain transistor(444), resistors(445,446) which are connected to each other in series. A resistor(411) is connected between a second connection node, which is a connection node of the resistors(445,446), and the gate of the amplification transistor(401), wherein the second connection node is connected to a gate of the transistor(441). Also, the gate of the common drain transistor(444) is connected to the first connection node while a gate of the transistor(441) is connected to the second connection node.

Abstract translation: 目的：提供一种偏置稳定电路，以便能够最小化由高频集成电路制造过程中发生的器件参数的变化引起的放大晶体管的电流变化，并由电源电压和温度的变化引起。 构成：根据本发明的偏置稳定电路具有用于产生具有放大晶体管（401）的参考电压的增强型参考电压产生晶体管（441），经由晶体管（441）流过恒定电流的恒流源， 以及电平移位和反馈电路，以将恒定电流源的电压电平转换并提供给晶体管的栅极（441,401）。 也就是说，恒流源连接在电源电压Vcc和第一连接节点K1之间，其中恒流源具有耗尽型晶体管（443）和与串联连接的电阻（442）和第 耗尽型晶体管（443）连接到节点。 晶体管（441）的漏极和源极连接在第一连接节点和地之间。 电平移位和反馈电路连接在电源和地之间，并具有共同的漏极晶体管（444），彼此串联连接的电阻（445,446）。 电阻器（411）连接在作为电阻器（445,446）的连接节点的第二连接节点和放大晶体管（401）的栅极之间，其中第二连接节点连接到晶体管的栅极（ 441）。 此外，公共漏极晶体管（444）的栅极连接到第一连接节点，而晶体管（441）的栅极连接到第二连接节点。

公开(公告)号：KR100261268B1

公开(公告)日：2000-08-01

申请号：KR1019970070308

申请日：1997-12-19

Applicant: 한국전자통신연구원

Inventor： 이진희 ,  박병선 ,  윤형섭 ,  박철순 ,  편광의

IPC: H01L21/288

Abstract: PURPOSE: A method for fabricating a modified gate by a lithography and an electroplating method is provided to improve the characteristics of a device, by reducing a gate resistance by increasing a section area, and by reducing a parasitic component generated between a gate head and an ohmic layer with lengthening a leg of the gate. CONSTITUTION: An ohmic metal layer(AuGe/Ni/Au)(3) is formed after growing an active layer(2) on a compound semiconductor substrate(1). The first resist(4) for gate leg is deposited, and a gate electrode pattern is formed. The resist for gate leg is PMMA and is annealed at about 180 deg.C. And, electron beam lithography process is performed to form a narrow gate when forming a pattern. The width of the pattern is below 0.25 micrometer. Then, a base metal layer(Ti/Ni)(5) for electroplating is formed on the micro pattern. And, the second resist film(6) is deposited, and is patterned with a mask pattern of the gate head. That is, the gate head pattern is formed using a light exposure method to control a gate resistance. Then, a gold(7a,7) is electroplated on the gate metal, and then, the gate metal with a long leg and large head is formed by lifting off the resist layer.

Abstract translation: 目的：提供通过光刻和电镀方法制造修改的栅极的方法，以通过增加截面积来减小栅极电阻，并且通过减小在栅极头和栅极之间产生的寄生分量来改善器件的特性 欧姆层延长了门的一条腿。 构成：在化合物半导体衬底（1）上生长活性层（2）之后形成欧姆金属层（AuGe / Ni / Au）（3）。 淀积用于栅极支脚的第一抗蚀剂（4），形成栅电极图案。 门脚的抗蚀剂为PMMA，并在约180℃退火。 并且，当形成图案时，执行电子束光刻工艺以形成窄栅极。 图案的宽度低于0.25微米。 然后，在微图案上形成用于电镀的贱金属层（Ti / Ni）（5）。 并且，沉积第二抗蚀剂膜（6），并用栅极头的掩模图案构图。 也就是说，使用曝光方法形成栅极头图案以控制栅极电阻。 然后，在栅极金属上电镀金（7a，7），然后通过剥离抗蚀剂层形成具有长腿和大头部的栅极金属。