公开(公告)号：KR1020140046101A

公开(公告)日：2014-04-18

申请号：KR1020120111803

申请日：2012-10-09

Applicant: 한국화학연구원

Inventor： 정선호 ,  서영희 ,  조예진 ,  김한결 ,  최영민 ,  류병환

IPC: C09D11/00 ,  H01L31/042

CPC classification number: Y02E10/50 ,  H01L31/042 ,  C09D11/00

Abstract: The present invention provides a device having superior solar cell properties by fabricating a thin film of a photoactive layer of a dense solar cell, in which the generation of cracks of the thin film may be prevented by using an ink composition for a photoactive layer of a solar cell including chalcogen compound particles, poly(vinyl pyrrolidone), and a solvent.

Abstract translation: 本发明提供了一种通过制造致密太阳能电池的光敏层的薄膜而具有优异的太阳能电池性能的装置，其中可以通过使用用于光敏层的油墨组合物来防止薄膜的裂纹的产生 太阳能电池包括硫族化合物颗粒，聚（乙烯基吡咯烷酮）和溶剂。

公开(公告)号：KR101344846B1

公开(公告)日：2014-01-16

申请号：KR1020120139384

申请日：2012-12-04

Applicant: 한국화학연구원

Inventor： 정선호 ,  최영민 ,  서영희 ,  류병환 ,  이수현 ,  박장웅 ,  안병완 ,  김겸욱

IPC: H01B13/00 ,  H01B1/02 ,  H01B5/14

Abstract: The present invention relates to a method for fabricating electronic devices using electrohydrodynamic (EHD) printing, which comprises the steps of: heating and stirring a first solution consisting of a metal precursor, an acid, an ammine, and a reducing agent to synthesize metal nanoparticles of which surface-oxide formation is controlled; making the metal nanoparticles formed in the previous step be dispersed in a non-aqueous solvent to prepare a conductive electrohydrodynamic-jet printable metal nano-ink composite; printing the conductive electrohydrodynamic-jet printable metal nano-ink composite on an insulating substrate; and heat-treating the insulating substrate on which the conductive electrohydrodynamic-jet printable metal nano-ink composite is printed.

Abstract translation: 本发明涉及使用电动力学（EHD）印刷制造电子器件的方法，该方法包括以下步骤：加热和搅拌由金属前体，酸，氨和还原剂组成的第一溶液以合成金属纳米粒子 其中表面氧化物形成被控制; 使上述步骤中形成的金属纳米颗粒分散在非水溶剂中以制备导电电动水射流可印刷金属纳米油墨复合材料; 在绝缘基板上印刷导电电动力学喷墨可印刷金属纳米油墨复合材料; 对其上印刷有导电电动水射流可印刷金属纳米油墨复合物的绝缘基板进行热处理。

公开(公告)号：KR101346240B1

公开(公告)日：2014-01-02

申请号：KR1020130027712

申请日：2013-03-15

Applicant: 한국화학연구원

Inventor： 류병환 ,  최영민 ,  정선호 ,  서영희 ,  김창균 ,  정택모 ,  프리예시빌라스모레

IPC: C01B33/021 ,  B82B1/00 ,  B82B3/00

Abstract: 본 발명은 캡핑된 나노 결정 실리콘의 제조방법에 관한 것으로, 자세하게는 환원제 및 캡핑제를 유기 용매에 투입하고, 실리콘 원료로서 테트라에톡시실란(TEOS) 또는 테트라메톡시실란(TMOS)을 사용함으로써 불순물이 없고, 재분산성이 우수하며, 합성방법이 단순하고, 환경 부담이 적은 캡핑된 나노 결정 실리콘의 제조방법에 관한 것이다.

公开(公告)号：KR101318939B1

公开(公告)日：2013-11-13

申请号：KR1020120104796

申请日：2012-09-20

Applicant: 한국화학연구원

Inventor： 최영민 ,  정선호 ,  서영희 ,  프리예시빌라스모레 ,  류병환

IPC: B82B3/00 ,  C01B33/021

Abstract: The present invention relates to a method for preparing silicon nanoparticles. The preparation method according to the present invention is more simple than a known preparation method and economically prepares silicon nanoparticles. Silicon nanoparticles prepared by the method of the present invention have small and uniform sizes, and provide excellent electrical characteristics during the formation of a silicon thin film.

Abstract translation: 本发明涉及一种制备硅纳米粒子的方法。 根据本发明的制备方法比已知的制备方法更简单，并且经济地制备硅纳米颗粒。 通过本发明的方法制备的硅纳米颗粒具有小而均匀的尺寸，并且在形成硅薄膜期间提供优异的电特性。

公开(公告)号：KR101298026B1

公开(公告)日：2013-08-26

申请号：KR1020120038634

申请日：2012-04-13

Applicant: 한국화학연구원

Inventor： 정선호 ,  서영희 ,  조예진 ,  최영민 ,  류병환

IPC: C09D11/00 ,  H01L31/042 ,  H01B1/22

CPC classification number: Y02E10/50 ,  C09D11/00 ,  H01B1/22 ,  H01L31/042

Abstract: PURPOSE: A manufacturing method of a solar battery is provided to manufacture a photoactive layer based on a single phase semiconductor compound, which has dense and coarse grains, through a low temperature heat treatment of 550 °C or less. CONSTITUTION: An ink comprises a copper nanoparticle and a chalcogen compound particle of one or more elements selected from group 12-14. A manufacturing method of a solar cell photoactive layer comprises a step of forming a coating film by spreading ink which contains the copper nanoparticle and the chalcogen compound particle; and a step of manufacturing a copper and chalcogen compound layer by heat-treating the coating layer. The group 12 includes Zn, the group 13 is one or more selected from indium and gallium, the group 14 includes Sn, and the chalcogen element is one or more selected from sulfur and selenium.

Abstract translation: 目的：提供一种太阳能电池的制造方法，通过550℃以下的低温热处理，制造基于具有致密且粗粒的单相半导体化合物的光活性层。 构成：油墨包含铜纳米颗粒和选自组12-14的一种或多种元素的硫属化合物颗粒。 太阳能电池光活性层的制造方法包括通过涂布含有铜纳米颗粒和硫属化合物颗粒的油墨形成涂膜的步骤; 以及通过对所述涂层进行热处理来制造铜和硫属化合物层的步骤。 组12包括Zn，第13族是选自铟和镓中的一种或多种，​​第14族包括Sn，硫属元素是选自硫和硒中的一种或多种。

公开(公告)号：KR101232671B1

公开(公告)日：2013-02-13

申请号：KR1020110064580

申请日：2011-06-30

Applicant: 한국화학연구원

Inventor： 정선호 ,  류병환 ,  최영민 ,  김창균 ,  정택모 ,  이병석

IPC: H01L31/0445 ,  H01L31/18

CPC classification number: H01L31/0322 ,  C01B19/002 ,  C01P2002/72 ,  H01L21/02568 ,  H01L21/02628 ,  Y02E10/541 ,  Y02P70/521

Abstract: 본 발명은, 태양전지용 흡수층(CIS층)으로 사용하는데 적합한 흡수막 조성물 및 그 제조 방법과 이를 이용한 태양전지 셀 및 태양전지 모듈에 관한 것으로, 이를 위하여 본 발명은, 구리 화합물, 인듐 화합물 및 셀레늄 화합물을 0.8 ∼ 1.3 : 0.8 ∼ 1.3 : 1.7 ∼ 2.3의 화학양론비로 혼합한 흡수층 입자를 포함하는 태양전지용 흡수막 조성물 및 그 제조 방법을 제공함으로써, 상대적으로 치밀도가 우수한 CIS 조성물 및 그 막을 제조할 수 있으며, 별도의 추가 공정 없이 합성 단계에서 Cu : In : Se의 화학양론비를 원하는 조성으로 조절할 수 있는 것이다.

公开(公告)号：KR1020130007231A

公开(公告)日：2013-01-18

申请号：KR1020110064580

申请日：2011-06-30

Applicant: 한국화학연구원

Inventor： 정선호 ,  류병환 ,  최영민 ,  김창균 ,  정택모 ,  이병석

IPC: H01L31/0445 ,  H01L31/18

CPC classification number: H01L31/0322 ,  C01B19/002 ,  C01P2002/72 ,  H01L21/02568 ,  H01L21/02628 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: An absorber film composition for a solar cell, a manufacturing method thereof, a solar cell using the same, and a solar cell using the same are provided to manufacture an absorption layer composition with relatively high density by synthesizing CIS particles including CuSe or CuSe2 of a low melting point to form a film. CONSTITUTION: A rear metal layer(104) is formed on a substrate(102). An absorbing layer(106) is formed on the rear metal layer. A buffer layer(108) is formed on the absorbing layer. A window layer(110) is formed on the buffer layer. A front electrode layer(112) is formed on the window layer.

Abstract translation: 目的：提供一种用于太阳能电池的吸收膜组合物，其制造方法，使用该太阳能电池的太阳能电池和使用该太阳能电池的太阳能电池，并通过合成包含CuSe或CuSe2的CIS颗粒来制造具有较高密度的吸收层组合物 的低熔点形成膜。 构成：在基板（102）上形成后金属层（104）。 在后金属层上形成吸收层（106）。 在吸收层上形成缓冲层（108）。 在缓冲层上形成窗口层（110）。 在窗口层上形成前电极层（112）。

公开(公告)号：KR101192252B1

公开(公告)日：2012-10-17

申请号：KR1020100044710

申请日：2010-05-12

Applicant: 한국화학연구원 ,  한화케미칼 주식회사

Inventor： 류병환 ,  정선호 ,  최영민 ,  이선숙 ,  송해천 ,  이지윤 ,  이병석 ,  오석헌 ,  김의덕 ,  백충훈 ,  손원일 ,  박선진

IPC: C09D11/52 ,  C09D11/30 ,  H01B5/14 ,  H05K3/10

Abstract: 본 발명은 친수성으로 표면 개질한 평균입경이 100nm 이하의 구리 나노입자 20 ~ 70 중량%, 물 10 ~ 45 중량%, 다가알콜 15 ~ 40 중량% 및 수계분산제 0.1 ~ 2 중량%를 포함하는 디지털프린팅용 수계 구리잉크 조성물 및 이의 제조방법에 관한 것이다.
본 발명에 따른 고농도 수계 구리잉크 조성물은 우수한 내산화성을 가지며 수계 조성물이므로 환경친화적이다. 또한, 유연기판과의 접착성이 우수하며, 잉크 젯팅성 및 배선의 선폭 제어가 용이하여 디지털인쇄용으로 적합하다.

公开(公告)号：KR1020110025334A

公开(公告)日：2011-03-10

申请号：KR1020090083346

申请日：2009-09-04

Applicant: 한국화학연구원

Inventor： 정선호 ,  최영민 ,  류병환

IPC: H01L21/208 ,  H01L21/324

CPC classification number: H01L21/02565 ,  H01L21/02628

Abstract: PURPOSE: A method for controlling crystallization for an oxide semiconductor for a solution process at a low temperature is provided to promote crystallization by controlling the thickness of a thin film. CONSTITUTION: A metal oxide precursor solution is coated on a substrate with the thickness of a thin film between 1 and 10 nm. The coated thin film is processed at a temperature of 200 to 350 degrees. The diluted solutions of the metal oxide precursor are made to control the thickness of the thin film between 1 and 10 nm by the coating of the metal oxide precursor solution. The diluted solutions of the metal oxide precursor include the metal oxide precursor of 0.01 to 0.09M.

Abstract translation: 目的：提供一种用于控制低温溶液处理的氧化物半导体结晶的方法，以通过控制薄膜的厚度来促进结晶。 构成：将金属氧化物前体溶液涂覆在基板上，薄膜的厚度在1至10nm之间。 涂覆的薄膜在200至350度的温度下进行处理。 金属氧化物前体的稀释溶液通过涂覆金属氧化物前体溶液来控制薄膜的厚度在1和10nm之间。 金属氧化物前体的稀释溶液包括0.01至0.09M的金属氧化物前体。

公开(公告)号：KR1020110024174A

公开(公告)日：2011-03-09

申请号：KR1020090082061

申请日：2009-09-01

Applicant: 한국화학연구원

Inventor： 이두형 ,  김창균 ,  정택모 ,  이선숙 ,  안기석 ,  정선호 ,  최영민 ,  류병환

IPC: B82B3/00 ,  B22F9/24 ,  C01G3/00

CPC classification number: C01G3/006 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/002 ,  C01G15/006 ,  C01P2004/64 ,  H01L31/18

Abstract: PURPOSE: A method for manufacturing low temperature water-based copper-indium-gallium-selenium(CuIn_xGa_1-xSe_2) nano particles is provided to control the particle of the copper-indium-gallium-selenium in a nano scale by controlling the size of an intermediate complex. CONSTITUTION: A complex solution containing copper and indium is prepared by reacting a copper compound, an indium compound, and a polymer electrolyte represented by chemical formula 1. A selenium compound is introduced into the complex solution, and copper-indium-(gallium-)selenium nano particles are prepared at low temperature. In chemical formula 1, R1 represents C6 to C30 aryl group, C1 to C18 alkyl group, C2 to C18 alkenyl group, or C3 to C18 cycloalkyl group. R2 is selected from a group including carboxylic acid, sulfonate, sulfate, ester sulfate, and phosphate. M1 is selected from sodium, ammonium, potassium, and amine. n represents an integer of 1 to 1000, and m represents an integer of 1 to 1000.

Abstract translation: 目的：提供一种制造低温水性铜铟镓硒（CuIn_xGa_1-xSe_2）纳米颗粒的方法，通过控制纳米尺度的铜铟镓硒颗粒的尺寸 中间复合体。 构成：通过铜化合物，铟化合物和由化学式1表示的聚合物电解质的反应制备含有铜和铟的复合溶液。将硒化合物引入复合溶液中，并将铜铟 - （镓） 硒纳米颗粒在低温下制备。 在化学式1中，R 1表示C 6〜C 30芳基，C 1〜C 18烷基，C 2〜C 18烯基或C 3〜C 18环烷基。 R2选自羧酸，磺酸盐，硫酸盐，酯硫酸盐和磷酸盐。 M1选自钠，铵，钾和胺。 n表示1〜1000的整数，m表示1〜1000的整数。