81.
    发明专利
    未知

    公开(公告)号:NO911434D0

    公开(公告)日:1991-04-11

    申请号:NO911434

    申请日:1991-04-11

    Applicant: HOECHST AG

    Abstract: The occurrence of twist states in FLC displays can be suppressed by adding ionophores to FLC mixtures. Applicable ionophores are amides of the general formula I (I) wherein R1, R2, R3 and R4 e.g. are alkyl, cyclohexyl, phenyl or benzyl and X is alkylene with -CH2-groups being replaced by -O-, 1,2-phenylene or 1,2-cyclohexylene.

    82.
    发明专利
    未知

    公开(公告)号:FI911719A0

    公开(公告)日:1991-04-10

    申请号:FI911719

    申请日:1991-04-10

    Applicant: HOECHST AG

    Abstract: The occurrence of twist states in FLC displays can be suppressed by adding ionophores to FLC mixtures. Applicable ionophores are amides of the general formula I (I) wherein R1, R2, R3 and R4 e.g. are alkyl, cyclohexyl, phenyl or benzyl and X is alkylene with -CH2-groups being replaced by -O-, 1,2-phenylene or 1,2-cyclohexylene.

    83.
    发明专利
    未知

    公开(公告)号:DE3925970A1

    公开(公告)日:1991-02-07

    申请号:DE3925970

    申请日:1989-08-05

    Applicant: HOECHST AG

    Abstract: Switching and display elements based on ferroelectric liquid-crystals often exhibit a pronounced optical hysteresis which results in the appearance of so-called ghost images. This phenomenon can be markedly reduced or even suppressed if at least one of the two orienting layers are in direct contact with the electrodes and is composed of an electrically conductive polymer of the formula (I): (I) in which R1, R2=independently of each other, H, or straight-chain or branched alkyl or alkoxy containing 1-16 carbon atoms, or halogen, X=S, NH, Y-=BF4-, PF6-, PO43-, AsF6-, SbCl6-, SO42-, HSO4-, alkyl-SO3-, perfluoroalkyl-SO3-, aryl-SO3, F- or Cl-, and n is an integer from 4 to 100 and m is an integer from 1 to 30.

    84.
    发明专利
    未知

    公开(公告)号:DE3920625A1

    公开(公告)日:1991-01-03

    申请号:DE3920625

    申请日:1989-06-23

    Applicant: HOECHST AG

    Abstract: Liquid-crystalline materials are becoming increasingly important in electrooptical switching and display devices. Recently, ferroelectric liquid-crystalline mixtures have also been investigated widely and employed in displays. A particularly important physical parameter for describing FLC mixtures is the spontaneous polarisation (Ps). On the one hand, a high spontaneous polarisation results in short response times, but on the other hand, high Ps values result in optical hysteresis, which causes, inter alia, so-called "ghost images". The use of FLC mixtures of high spontaneous polarisation (Ps 20 nC/cm ) and a natural helical pitch of less than half the layer thickness in an SSFLC display having a layer thickness of from 1 to 10 mu m allows the problem of optical hysteresis to be circumvented, in spite of the high spontaneous polarisation. FLC mixtures in which Ps is > 40 nC/cm can also be switched under these conditions.

    88.
    发明专利
    未知

    公开(公告)号:DE69123965T2

    公开(公告)日:1997-07-17

    申请号:DE69123965

    申请日:1991-06-14

    Applicant: HOECHST AG

    Abstract: A process for producing a liquid-crystal cell by using a ferroelectric liquid crystal (FLC) composition containing at least one oleophilic substance that exhibits liquid crystallinity and at least one additive having lower boiling point than said substance, characterized in that said FLC composition is charged into the cell under high-temperature and high-vacuum conditions, provided that the two conditions will not overlap, or will overlap for a sufficiently short time to effectively prevent the evaporation of said additive.

    89.
    发明专利
    未知

    公开(公告)号:DE69123965D1

    公开(公告)日:1997-02-13

    申请号:DE69123965

    申请日:1991-06-14

    Applicant: HOECHST AG

    Abstract: A process for producing a liquid-crystal cell by using a ferroelectric liquid crystal (FLC) composition containing at least one oleophilic substance that exhibits liquid crystallinity and at least one additive having lower boiling point than said substance, characterized in that said FLC composition is charged into the cell under high-temperature and high-vacuum conditions, provided that the two conditions will not overlap, or will overlap for a sufficiently short time to effectively prevent the evaporation of said additive.

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