公开(公告)号：DE102005027447B4

公开(公告)日：2009-04-16

申请号：DE102005027447

申请日：2005-06-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78

公开(公告)号：DE102007041124A1

公开(公告)日：2009-03-12

申请号：DE102007041124

申请日：2007-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/74 ,  H01L21/332

Abstract: A thyristor having a semiconductor body in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction starting from a rear face toward a front face. For buffering of the transient heating, a metallization is applied to the front face and/or to the rear face and includes at least one first section which has an area-specific heat capacity of more than 50 J.K-1.m-2 at each point.

公开(公告)号：DE10349582B4

公开(公告)日：2008-09-25

申请号：DE10349582

申请日：2003-10-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON DR-ING ,  HILLE FRANK ,  VYTLA RAJEEV KRISHNA ,  FALCK ELMAR ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  STRACK HELMUT

IPC: H01L29/861 ,  H01L21/26 ,  H01L21/329 ,  H01L29/32

公开(公告)号：DE10240107B4

公开(公告)日：2008-03-06

申请号：DE10240107

申请日：2002-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  FALCK ELMAR

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/739 ,  H01L29/745 ,  H01L29/861 ,  H01L29/87

公开(公告)号：DE102005041335B4

公开(公告)日：2007-05-24

申请号：DE102005041335

申请日：2005-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER ,  NIEDERNOSTHEIDE FRANZ-JOSEF

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78

公开(公告)号：DE102005026408B3

公开(公告)日：2007-02-01

申请号：DE102005026408

申请日：2005-06-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  MAUDER ANTON ,  BARTHELMESS REINER

IPC: H01L21/328 ,  H01L21/265 ,  H01L21/324 ,  H01L29/739 ,  H01L29/74 ,  H01L29/861

Abstract: A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

公开(公告)号：DE102005023882B3

公开(公告)日：2007-02-01

申请号：DE102005023882

申请日：2005-05-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

IPC: H01L29/861 ,  H01L21/329

Abstract: Starting from semiconductor body (1) rear side (12) there is sequence of strongly (8) and weakly (7) doped N-zones and weakly doped P-zone (6) with PN-load junction (4) between weakly doped N- and P-zones.Orthogonally to vertical direction are spaced, strongly P-doped islands (54-57) extending into weakly P-doped zone. In weakly P-doped zone is fitted spaced further zone (91-97) whose charge carrier service life is reduced. Independent claims are included fo rmethod of forming high speed diode.

公开(公告)号：DE102005063332A1

公开(公告)日：2007-01-25

申请号：DE102005063332

申请日：2005-05-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

IPC: H01L29/861

Abstract: Starting from semiconductor body (1) rear side (12) there is sequence of strongly (8) and weakly (7) doped N-zones and weakly doped P-zone (6) with PN-load junction (4) between weakly doped N- and P-zones.Orthogonally to vertical direction are spaced, strongly P-doped islands (54-57) extending into weakly P-doped zone. In weakly P-doped zone is fitted spaced further zone (91-97) whose charge carrier service life is reduced. Independent claims are included fo rmethod of forming high speed diode.

公开(公告)号：DE102005027447A1

公开(公告)日：2006-12-28

申请号：DE102005027447

申请日：2005-06-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78

Abstract: The method involves providing with a semiconductor body (1), which exhibits a volume range (2) and an adjacent boundary region (3) thereon in the lateral direction (r). A pn-charge transition (25) is formed between an n-doped zone (20) and a p-doped zone (10). The acceptor type states of the generated particles (30) are irradiated in the first irradiation zone (5).

公开(公告)号：DE102005011873A1

公开(公告)日：2006-09-21

申请号：DE102005011873

申请日：2005-03-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SIEMIENIEC RALF ,  STRACK HELMUT

IPC: H01L21/336 ,  H01L21/265 ,  H01L29/06 ,  H01L29/36

Abstract: The method involves producing space agglomerates within a semiconductor body (2) e.g. silicon wafer, of a power transistor, while the wafer is irradiated with silicon ions or helium ions. Diffusion processes are accomplished in order to store heavy metal e.g. gold, in the agglomerate. The zone of increased ion recombination is produced in a body zone of the power transistor.