公开(公告)号：EP0890998A1

公开(公告)日：1999-01-13

申请号：EP97830339.4

申请日：1997-07-07

Applicant: STMicroelectronics S.r.l.

Inventor： Ferrari, Paolo ,  Vigna, Benedetto ,  Villa, Flavio

IPC: H01L41/00 ,  G01L9/00

CPC classification number: G01L9/0042 ,  G01L9/0054

Abstract: The pressure sensor comprises a semiconductor material single crystal substrate (21); a semiconductor material layer (28) on the substrate (21); an air gap (55) arranged between the substrate (21) and the semiconductor material layer (28); and at least an opening (53) extending between the lower outer surface (52) of the substrate (21) and the air gap (55). The semiconductor material layer (28) is formed by a polycrystalline region (29) forming a diaphragm over the air gap (55) and by a monocrystalline region (30) elsewhere. Piezoresistive elements (46) extend over the semiconductor material layer (28), insulated therefrom by a dielectric layer (45), at a lateral delimitation edge of the diaphragm (29) and are connected one another so as to form a Wheatstone bridge the unbalancing whereof allows the pressure exerted onto the sensor to be measured.

Abstract translation: 该压力传感器包括半导体材料的单晶基板（21）; 半导体材料层（28）在基板（21）; 在基板（21）和所述半导体材料层（28）之间设置空气间隙（55）; 并且在开口（53）的（21）的下部外表面（52）之间延伸与所述气隙（55）至少基材。 半导体材料层（28）由上方形成空气间隙（55）的隔膜的多晶区域（29）和由一个单晶区域（30）的其他地方形成。 压阻元件（46）上延伸的半导体材料层（28），在隔膜（29）的横向定界边缘由介电层（45）由绝缘那里和相互连接，从而形成惠斯登电桥的不平衡 允许WHEREOF施加到传感器上的压力进行测量。

公开(公告)号：EP0890978A1

公开(公告)日：1999-01-13

申请号：EP97830345.1

申请日：1997-07-10

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Ferrera, Marco ,  Montanini, Pietro

IPC: H01L21/00 ,  G01P15/00 ,  G01C19/00

CPC classification number: H01L21/764 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0735 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/76202

Abstract: To increase the sensitivity of the sensor the suspended structure (40) forming the seismic mass has a tungsten core (26) which has high density. To manufacture it, a sacrificial layer (21) of silicon oxide, a polycrystal silicon layer (24), a tungsten layer (26) and a silicon carbide layer (28) are deposited in succession over a single crystal silicon body (1); the suspended structure (40) is defined by selectively removing the silicon carbide (28), tungsten (26) and polycrystal silicon (24) layers; spacers (30') of silicon carbide are formed which cover the uncovered ends of the tungsten layer (26); and the sacrificial layer (21) is then removed.

Abstract translation: 为了提高形成的地震质量的悬挂结构（40）具有钨芯（26），所述传感器具有高密度的敏感性。 为了制造它，氧化硅的牺牲层（21），一多晶硅层（24），钨层（26）和碳化硅层（28）被连续超过单晶硅体沉积（1）; 悬浮结构（40）通过选择性地去除碳化硅（28），钨（26）和多晶硅（24）的层所定义; 覆盖钨层（26）的未覆盖端碳化硅的间隔件（30“）被形成; 和牺牲层（21）随后被移除。

公开(公告)号：EP0887186A1

公开(公告)日：1998-12-30

申请号：EP97830321.2

申请日：1997-06-27

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Maggi, Riccardo

IPC: B41J2/125 ,  B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1603 ,  B41J2/125 ,  B41J2/14129 ,  B41J2/14153 ,  B41J2/164 ,  B41J2002/14354 ,  B41J2202/13

Abstract: The inkjet print head comprises an ink drop emission mini-gun (30) and a drop emission sensor (4) integrated in a chip of semiconductor material. The mini-gun is formed by an ink chamber (21) and a nozzle (23) in communication with the ink chamber and the drop emission sensor includes a resistive element (4) arranged in a position adjacent to the ink chamber (21). The resistance of the resistive element (4) depends on the pressure exerted thereon, so that when the mini-gun emits an ink drop, it is subjected to a recoil movement which causes a change of pressure and hence of resistance in the resistive element; this change in resistance may be detected through a suitable circuitry (29) to identify whether and when a drop of ink has been emitted.

Abstract translation: 喷墨打印头包括集成在半导体材料芯片中的墨滴发射微型枪（30）和液滴发射传感器（4）。 微型枪由与墨水室连通的墨水室（21）和喷嘴（23）形成，并且液滴发射传感器包括布置在与墨水室（21）相邻的位置的电阻元件（4）。 电阻元件（4）的电阻取决于施加在其上的压力，使得当微型枪发射墨滴时，其受到反冲运动，其导致电阻元件中的压力变化，从而导致电阻的变化; 可以通过合适的电路（29）来检测电阻的这种变化，以识别是否以及何时已经发射一滴墨水。