Abstract:
One embodiment of the disclosure relates to a method of making an optical fiber comprising the steps of: (i) exposing a silica based preform with at least one porous glass region having soot density of ρ to a gas mixture comprising SiCl4 having SiCl4 mole fraction ySiCl4 at a doping temperature Tdop such that parameter X is larger than 0.03 to form the chlorine treated preform, wherein X = 1 1 + [ ( ρ ρ s - ρ ) 0.209748 T dop Exp [ - 5435.33 / T dop ] y SiCl 4 3 / 4 ] and ρs is the density of the fully densified soot layer; and (ii) exposing the chlorine treated preform to temperatures above 1400° C. to completely sinter the preform to produce sintered optical fiber preform with a chlorine doped region; and (iii) drawing an optical fiber from the sintered optical preform.
Abstract translation:本公开的一个实施方案涉及一种制造光纤的方法,包括以下步骤:(i)将二氧化硅基预型体暴露于具有烟炱密度的至少一个多孔玻璃区域; 在掺杂温度Tdop下将SiCl 4的SiCl 4摩尔分数为ySiCl4的气体混合物混合,使得参数X大于0.03以形成经氯处理的预制件,其中X = 11 + [(&rgr; s - &rgr;))0.209748 [... 5435.33 / T dop] y SiCl 4 3/4]和&rgr; s是完全致密的烟灰层的密度; 和(ii)将氯处理的预制件暴露于高于1400℃的温度下,以完全烧结预成型件,以制备具有氯掺杂区域的烧结光纤预制件; 和(iii)从烧结的光学预型件拉制光纤。
Abstract:
There is provided a method for producing an optical fiber having low attenuation, the optical fiber including a core that contains an alkali metal element. An optical fiber preform that includes a core part and a cladding part is drawn with a drawing apparatus to form an optical fiber, the core part having an average concentration of an alkali metal element of 5 atomic ppm or more. During the drawing, the time the temperature of glass is maintained at 1500° C. or higher is 110 minutes or less. The drawing speed is preferably 1200 m/min or more and more preferably 1500 m/min to 2300 m/min. The optical fiber preform preferably has a diameter of 70 mm to 170 mm and more preferably 90 mm to 150 mm.
Abstract:
A titania-doped quartz glass containing 3-12 wt % of titania at a titania concentration gradient less than or equal to 0.01 wt %/μm and having an apparent transmittance to 440 nm wavelength light of at least 30% at a thickness of 6.35 mm is of such homogeneity that it provides a high surface accuracy as required for EUV lithographic members, typically EUV lithographic photomask substrates.
Abstract:
First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.05 cm−1 or more, and the silica porous body was subjected to a reduction treatment, followed by baking, thereby forming a dense glass body.
Abstract:
What is disclosed includes OD-doped synthetic silica glass capable of being used in optical elements for use in lithography below about 300 nm. OD-doped synthetic silica glass was found to have significantly lower polarization-induced birefringence value than non-OD-doped silica glass with comparable concentration of OH. Also disclosed are processes for making OD-doped synthetic silica glasses, optical member comprising such glasses, and lithographic systems comprising such optical member. The glass is particularly suitable for immersion lithographic systems due to the exceptionally low polarization-induced birefringence values at about 193 nm.
Abstract:
In the nanoimprint lithography, titania-doped quartz glass having an internal transmittance distribution of up to 10% at wavelength 365 nm is suited for use as nanoimprint molds.
Abstract:
An F-doped silica glass, a process for making the glass, an optical member comprising the glass, and an optical system comprising such optical member. The glass material comprises 0.1-5000 ppm by weight of fluorine. The glass material according to certain embodiments of the present invention has low polarization-induced birefringence, low LIWFD and low induced absorption at 193 nm.
Abstract:
An electrodeless lamp and process for emitting ultraviolet and/or vacuum ultraviolet radiation comprises an envelope formed of an ultra-pure and/or low-defect quartz material and an ultraviolet and/or vacuum ultraviolet emissive material disposed in the interior region of the envelope. The electrodeless lamp formed of the ultra-pure and/or low-defect quartz material minimizes degradation during use.
Abstract:
An optical member made of silica glass manufactured by the direct method where a material gas comprising an organosilicon compound is allowed to react in an oxidizing flame, said optical member having a 2×1014 molecules/cm3 or less concentration of formyl radical generated by X-ray irradiation whose dose is 0.01 Mrad or more and 1 Mrad or less.
Abstract translation:通过直接法制造的由石英玻璃制成的光学构件,其中包含有机硅化合物的材料气体在氧化火焰中反应,所述光学构件具有2×10 14分子/ cm 3 通过X射线照射产生的或更少浓度的甲酰基,其剂量为0.01Mrad以上且1Mrad以下。
Abstract:
A silica glass member of the present invention is one wherein when a composition thereof is expressed by SiOx, x is not less than 1.85 nor more than 1.95, wherein a concentration of hydrogen molecules included therein is not less than 1null1016 molecules/cm3 nor more than 5null1018 molecules/cm3, and wherein a difference AnullB between an absorption coefficient A immediately before an end of irradiation with 1null104 pulses of ArF excimer laser light in an average one-pulse energy density of 2 mJ/cm2 and a second absorption coefficient B at 600 seconds after a stop of the irradiation with the ArF excimer laser light is not more than 0.002 cmnull1. When this silica glass member is applied to an illumination optical system and/or a projection optical system in projection exposure apparatus, it becomes feasible to implement uniform exposure while reducing variation in illuminance on a reticle surface and in an exposure area on a wafer.
Abstract translation:本发明的石英玻璃构件是当其组成由SiO x表示时,x不小于1.85或不大于1.95,其中包含的氢分子的浓度不小于1×10 16分子/ cm <3>不超过5×10 18分子/ cm 3,并且其中在照射结束之前的吸收系数A与平均单脉冲中的1×10 4个ArF准分子激光脉冲之间的差AB 用ArF准分子激光照射停止600秒后的能量密度为2mJ / cm 2,第二吸收系数B为0.002cm -1以下。 当将该石英玻璃构件应用于投影曝光装置中的照明光学系统和/或投影光学系统时,可以实现均匀曝光,同时减小掩模版面和晶片上的曝光区域中的照度变化。