公开(公告)号：WO2012121672A1

公开(公告)日：2012-09-13

申请号：PCT/SG2012/000073

申请日：2012-03-07

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES ,  WONG, David ,  PENG, Xiaoming ,  CHIN, Po Shin Francois ,  PNG, Khiam Boon ,  ZHANG, Haiying

Inventor： WONG, David ,  PENG, Xiaoming ,  CHIN, Po Shin Francois ,  PNG, Khiam Boon ,  ZHANG, Haiying

IPC: H04W16/10 ,  H04W48/10 ,  H04W72/04 ,  H04L5/00

CPC classification number: H04W28/20 ,  H04L5/001 ,  H04L5/0064 ,  H04L5/0087 ,  H04L5/0096

Abstract: The present invention is directed to a network component of a communication network, the network component comprising a determiner configured to determine a required number of logical channels and to determine whether a bandwidth of a communication channel used by the communication network should be changed based on the required number of logical channels; a controller configured to change the bandwidth of the communication channel if it has been determined that the bandwidth of the communication channel used by the communication network should be changed based on the required number of logical channels; and a transceiver configured to send to a communication device a signal indicating to the communication device to operate in the communication channel with the changed bandwidth if the bandwidth of the communication channel has been changed. A method of performing an operation of a communication network in a communication channel is also disclosed.

Abstract translation: 本发明涉及一种通信网络的网络部件，该网络部件包括确定器，该确定器被配置为确定所需数量的逻辑信道，并且确定通信网络使用的通信信道的带宽是否应当基于 所需数量的逻辑通道; 如果已经确定通信网络使用的通信信道的带宽应当根据所需数量的逻辑信道而改变，则控制器被配置为改变通信信道的带宽; 以及收发器，被配置为如果通信信道的带宽已经改变，则向通信设备发送指示通信设备在具有改变的带宽的通信信道中操作的信号。 还公开了在通信信道中执行通信网络的操作的方法。

公开(公告)号：WO2009139724A1

公开(公告)日：2009-11-19

申请号：PCT/SG2009/000101

申请日：2009-03-20

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES ,  PENG, Xiaoming ,  SUBRAMANIAN, Ananth ,  CHIN, Po Shin Francois ,  ZHANG, Hai Ying

Inventor： PENG, Xiaoming ,  SUBRAMANIAN, Ananth ,  CHIN, Po Shin Francois ,  ZHANG, Hai Ying

IPC: H04W72/02 ,  H04B1/713 ,  H04J11/00 ,  H04L27/26

CPC classification number: H04L5/0037 ,  H04B1/713 ,  H04L5/0007 ,  H04L5/0062

Abstract: A method for transmitting OFDM symbols by a plurality of ad-hoc radio communication devices in an ad-hoc radio communication devices' group is provided, the method comprising: a first ad-hoc radio communication device of the ad-hoc radio communication devices' group transmitting a first plurality of two OFDM symbols in a first plurality of two frequency sub-ranges of a frequency range selected for transmission in accordance with a frequency hopping pattern, the frequency range comprising a plurality of frequency sub-ranges; in the same transmission time period, a second ad-hoc radio communication device of the ad-hoc radio communication devices' group transmitting a second plurality of two OFDM symbols in a second plurality of two frequency sub-ranges of the frequency range, wherein the second plurality of frequency sub-ranges has no overlap with the first plurality of frequency sub-ranges.

Abstract translation: 提供了一种在自组织无线电通信设备组中由多个自组织无线电通信设备发送OFDM符号的方法，所述方法包括：所述自组织无线电通信设备的第一自组织无线电通信设备， 所述频率范围包括多个频率子范围;所述频率范围包括多个频率子范围，所述频率范围包括多个频率子范围，所述频率范围包括多个频率子范围; 在相同的传输时间段内，所述自组织无线电通信设备组的第二个自组织无线电通信设备在所述频率范围的第二多个两个频率子范围内发送第二多个两个OFDM符号，其中， 第二多个频率子范围与第一多个频率子范围没有重叠。

公开(公告)号：US11264461B2

公开(公告)日：2022-03-01

申请号：US16648242

申请日：2019-02-28

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Weier Lu ,  Yang Xia ,  Lili Zhao ,  Nan Li

IPC: H01L29/16 ,  C01B32/194 ,  B32B37/00

Abstract: Disclosed is a graphene electrochemical transfer method assisted by multiple supporting films, comprising: (1) growing graphene on a substrate, and then spin-coating a thin layer of photoresist on a surface of the graphene as a first film; (2) spin-coating n layers of thick, tough, and selectively dissolvable polymer films on the surface of the first film as an top film; (3) dissociating the multi-layer composite film and the graphene from the surface of the substrate by an electrochemical process, and dissolving the thick polymer films which is the top film with a first solvent; (4) after cleaning, transferring the thin first film and the graphene to a target substrate, and finally dissolving the thin first film away with a second solvent to complete the transfer process. This transfer process is fast, stable, and capable of transferring a large-size graphene, which may promote the large-scale application of graphene.

公开(公告)号：US10720578B2

公开(公告)日：2020-07-21

申请号：US16070485

申请日：2016-04-29

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Hangbing LV ,  Ming Liu ,  Xiaoxin Xu ,  Qing Luo ,  Qi Liu ,  Shibing Long

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided are a self-gating resistive storage device and a method for fabrication thereof; said self-gating resistive storage device comprises: lower electrodes; insulating dielectric layers arranged perpendicular to, and intersecting with, the lower electrodes to form a stacked structure, said stacked structure being provided with a vertical trench; a gating layer grown on the lower electrodes by means of self-alignment technique, the interlayer leakage channel running through the gating layer being isolated via the insulating dielectric layers; a resistance transition layer arranged in the vertical trench and connected to the insulating dielectric layers and the gating layer; and an upper electrode arranged in the resistance transition layer. In the storage device provided by the described technical solution, the gating layer is grown on the lower electrodes by means of self-alignment technique, such that the interlayer leakage channel running through the gating layer is isolated via the insulating dielectric layers; thus leakage between the upper and lower word lines through the gating layer is prevented, solving the technical problem in the prior art of leakage between the upper and lower word lines in a self-gating resistive storage device, and improving the reliability of the device.

公开(公告)号：US10176287B2

公开(公告)日：2019-01-08

申请号：US14403938

申请日：2014-04-25

Applicant: The Institute of Microelectronics of Chinese Academy of Sciences

Inventor： Jianhui Bu ,  Shuzhen Li ,  Jiajun Luo ,  Zhengsheng Han

IPC: G06F17/50

Abstract: The invention discloses an STI stress effect modeling method and device of an MOS device, and belongs to the technical field of parameter extraction modeling of devices. The method comprises the following steps: introducing the influence of temperature parameters on the STI stress effect of the MOS device, so as to form a function showing that the STI stress effect of the MOS device changes along with the temperature parameters; extracting the model parameter Model1 of the MOS device at normal temperature; on the basis of the Model1, extracting the parameter Model2 that the STI stress affects the properties of the MOS device at normal temperature; and on the basis of the Model2, extracting fitting parameters of the MOS device in the function so as to acquire final model parameters. The device comprises a first module, a second module, a third module and a fourth module. By establishing the function showing that the STI stress effect of the MOS device changes along with the temperature parameters, the influence of the temperature on the STI stress effect of the MOS device can be accurately described, so that the extracted model parameters are more accurate and reliable.

公开(公告)号：US10700276B2

公开(公告)日：2020-06-30

申请号：US15744064

申请日：2016-04-22

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Hangbing Lv ,  Ming Liu ,  Qi Liu ,  Shibing Long

IPC: H01L45/00

Abstract: The present invention discloses a preparation method of a Cu-based resistive random access memory, and a memory. The preparation method includes: performing composition and a chemical combination treatment on a lower copper electrode (10) to generate a compound buffer layer (40), wherein the compound buffer layer (40) is capable of preventing the oxidation of the lower copper electrode (10); depositing a solid electrolyte material (50) on the compound buffer layer (40); and depositing an upper electrode (60) on the solid electrolyte material (50) to form the memory. In the above technical solution, the compound buffer layer (40) capable of preventing the oxidation of the lower copper electrode (10) is inserted between the lower copper electrode (10) and the solid electrolyte material (50) to efficiently prevent the oxidation of the lower copper electrode (10) in a growth process of the solid electrolyte material (50), such that an electrode interface does not become rough due to the oxidation, thereby solving the technical problem of relatively low reliability and yield of the device resulting from the rough electrode interface of the Cu-based resistive random access memory in the prior art, and thus the reliability and the yield of the device are improved.

公开(公告)号：US20190081237A1

公开(公告)日：2019-03-14

申请号：US16070485

申请日：2016-04-29

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Hangbing LV ,  Ming LIU ,  Xiaoxin XU ,  Qing LUO ,  Qi LIU ,  Shibing LONG

IPC: H01L45/00

CPC classification number: H01L45/1233 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1675

Abstract: Provided are a self-gating resistive storage device and a method for fabrication thereof; said self-gating resistive storage device comprises: lower electrodes; insulating dielectric layers arranged perpendicular to, and intersecting with, the lower electrodes to form a stacked structure, said stacked structure being provided with a vertical trench; a gating layer grown on the lower electrodes by means of self-alignment technique, the interlayer leakage channel running through the gating layer being isolated via the insulating dielectric layers; a resistance transition layer arranged in the vertical trench and connected to the insulating dielectric layers and the gating layer; and an upper electrode arranged in the resistance transition layer. In the storage device provided by the described technical solution, the gating layer is grown on the lower electrodes by means of self-alignment technique, such that the interlayer leakage channel running through the gating layer is isolated via the insulating dielectric layers; thus leakage between the upper and lower word lines through the gating layer is prevented, solving the technical problem in the prior art of leakage between the upper and lower word lines in a self-gating resistive storage device, and improving the reliability of the device.

公开(公告)号：US11366946B2

公开(公告)日：2022-06-21

申请号：US16646573

申请日：2018-08-09

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Nianduan Lu ,  Ling Li ,  Ming Liu

IPC: G06F30/27 ,  G06F16/23 ,  G06N3/08 ,  G06F111/10

Abstract: The present disclosure provides a method and an apparatus for obtaining surface potential. The method comprises: obtaining parameter information of multiple target devices, wherein the parameter information includes: size, device structure, material parameter, and carrier mobility of each of the target devices at different temperatures, and the multiple target devices include: devices fabricated by using conventional materials and devices fabricated by using first new materials whose surface potentials have been determined, and the conventional materials include bulk materials and the first new materials include thin film materials; extracting surface potentials based on the size, the device structure, the material parameter and the mobility of each of the target devices under corresponding operating conditions; establishing a surface potential database based on the surface potentials and the parameter information; constructing a surface potential analytical model according to neural network based on the surface potential database; and determining the surface potential of a device fabricated by using a second new material by using the surface potential analytical model.

公开(公告)号：US11010530B2

公开(公告)日：2021-05-18

申请号：US16647027

申请日：2018-08-09

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Nianduan Lu ,  Ling Li ,  Ming Liu ,  Qi Liu

IPC: G06F30/398 ,  G06F16/903 ,  G06F113/26 ,  H01L45/00

Abstract: The disclosure provides a method and apparatus for designing a resistive random access memory, and the method comprise: receiving a preset first parameter standard of a resistive switching material, searching for and outputting a first resistive switching material based on the first parameter standard, first parameters including: band gap, charge transfer, vacancy, migration barrier, carrier activation energy. Schottky barrier and number of mesophase: establishing a resistive switching material database according to the first resistive switching materials; receiving a second parameter standard for a resistive random access memory device model, and selecting a second resistive switching material from the resistive switching material database according to the second parameter standard, second parameters including: Forming voltage, SET voltage, RESET voltage, erasing and writing speed, power consumption, storage window, stability, durability, on-off ratio, fluctuation of current parameter and storage density of the device model; and designing a resistive random access memory by using the second resistive switching material, corresponding electrode material, and a predetermined storage structure.

公开(公告)号：US20200265176A1

公开(公告)日：2020-08-20

申请号：US16646573

申请日：2018-08-09

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Nianduan LU ,  Ling LI ,  Ming LIU

IPC: G06F30/27 ,  G06F16/23 ,  G06N3/08

Abstract: The present disclosure provides a method and an apparatus for obtaining surface potential. The method comprises: obtaining parameter information of multiple target devices, wherein the parameter information includes: size, device structure, material parameter, and carrier mobility of each of the target devices at different temperatures, and the multiple target devices include: devices fabricated by using conventional materials and devices fabricated by using first new materials whose surface potentials have been determined, and the conventional materials include bulk materials and the first new materials include thin film materials; extracting surface potentials based on the size, the device structure, the material parameter and the mobility of each of the target devices under corresponding operating conditions; establishing a surface potential database based on the surface potentials and the parameter information; constructing a surface potential analytical model according to neural network based on the surface potential database; and determining the surface potential of a device fabricated by using a second new material by using the surface potential analytical model.