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公开(公告)号：KR1020070112810A
公开(公告)日：2007-11-27
申请号：KR1020077021629
申请日：2006-02-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/31 , H01L21/02 , C23C16/455
CPC classification number: C23C16/4412 , C23C16/4401 , C23C16/45523 , C23C16/45548
Abstract: A substrate processing method by a substrate processing device comprising a processing container for holding in its inside a substrate to be processed, a first gas supply means including a flow rate regulation means, supplying first processing gas to the processing container, a second gas supply means supplying second processing gas to the processing container. The substrate processing method repeats four steps that are a first step for regulating the first processing gas to a first flow rate by the flow rate regulation means to supply the gas in the first direction, a second step for discharging the first processing gas from the processing container, a third step for supplying second processing gas to the processing container, and a fourth step for discharging the second processing gas from the processing container. Between a first step 1 and a first step 2 that is performed next to the first step 1 is a processing gas flow stabilization step.
Abstract translation: 一种基板处理方法，该基板处理装置包括：处理容器，用于在其内部保持要处理的基板;第一气体供给装置，包括流量调节装置，向处理容器供应第一处理气体;第二气体供给装置 向处理容器供应第二处理气体。 基板处理方法重复四个步骤，该步骤是通过流量调节装置将第一处理气体调节到第一流量以在第一方向上供应气体的第一步骤，用于从处理中排出第一处理气体的第二步骤 容器，向处理容器供给第二处理气体的第三工序，以及从处理容器排出第二处理气体的第四工序。 在第一步骤1和第一步骤1之后执行的第一步骤2之间是处理气体流动稳定步骤。
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公开(公告)号：KR1020070102607A
公开(公告)日：2007-10-18
申请号：KR1020077020452
申请日：2006-02-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/304 , H01L21/316
CPC classification number: H01J37/32935 , C23C16/405 , C23C16/407 , C23C16/45544 , H01J37/3244 , H01J37/32568
Abstract: A method of substrate treatment by means of a substrate treating apparatus holding a treatment object substrate and including a treatment vessel having thereinside a first space wherein a first treating gas or second treating gas is fed on the treatment object substrate and a second space defined around the first space and communicating with the first space; first evacuation means for evacuating the first space; and second evacuation means for evacuating the second space, which method is characterized by including the first step of feeding the first treating gas to the first space; the second step of discharging the first treating gas from the first space; the third step of feeding the second treating gas to the first space; and the fourth step of discharging the second treating gas from the first space, while the pressure of the second space is controlled by a pressure regulation gas fed into the second space.
Abstract translation: 一种基板处理装置的方法，所述基板处理装置保持处理对象基板并且包括处理容器，所述处理容器具有第一空间，其中所述第一处理气体或第二处理气体被供给到所述处理对象基板上， 第一空间与第一空间通信; 用于撤离第一空间的第一撤离装置; 以及用于抽空第二空间的第二抽空装置，该方法的特征在于包括将第一处理气体供给到第一空间的第一步骤; 从第一空间排出第一处理气体的第二步骤; 将第二处理气体供给到第一空间的第三步骤; 以及从第一空间排出第二处理气体的第四步骤，同时第二空间的压力由供给到第二空间的压力调节气体控制。
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公开(公告)号：KR100927912B1
公开(公告)日：2009-11-19
申请号：KR1020077020452
申请日：2006-02-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/304 , H01L21/316
CPC classification number: H01J37/32935 , C23C16/405 , C23C16/407 , C23C16/45544 , H01J37/3244 , H01J37/32568
Abstract: A method of processing a substrate by a substrate processing apparatus is disclosed. The substrate processing apparatus includes a processing container including a first space where a first processing gas or a second processing gas is supplied onto the substrate and a second space formed around the first space; a first exhaust unit configured to evacuate the first space; and a second exhaust unit configured to evacuate the second space. The method includes a first step of supplying the first processing gas into the first space; a second step of discharging the first processing gas from the first space; a third step of supplying the second processing gas into the first space; and a fourth step of discharging the second processing gas from the first space; wherein the pressure in the second space is adjusted by a pressure-adjusting gas supplied into the second space.
Abstract translation: 公开了一种通过基板处理设备处理基板的方法。 该基板处理装置包括：处理容器，其具有向基板供给第一处理气体或第二处理气体的第一空间和形成于第一空间的周围的第二空间; 第一排气单元，所述第一排气单元构造成排空所述第一空间; 以及构造成排空第二空间的第二排气单元。 该方法包括将第一处理气体供应到第一空间中的第一步骤; 从第一空间排出第一处理气体的第二步骤; 将第二处理气体供给到第一空间的第三步骤; 以及从第一空间排出第二处理气体的第四步骤; 其中第二空间中的压力通过供应到第二空间中的压力调节气体来调节。
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公开(公告)号：KR100887443B1
公开(公告)日：2009-03-10
申请号：KR1020077021629
申请日：2006-02-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/31 , H01L21/02 , C23C16/455
CPC classification number: C23C16/4412 , C23C16/4401 , C23C16/45523 , C23C16/45548
Abstract: 피처리 기판을 내부에 유지하는 처리 용기와, 제 1 처리 가스를 상기 처리 용기에 공급하는, 유량 조정 수단을 포함하는 제 1 가스 공급 수단과, 제 2 처리 가스를 상기 처리 용기에 공급하는 제 2 가스 공급 수단을 갖는 기판 처리 장치에 의한 기판 처리 방법으로서, 상기 제 1 처리 가스를, 상기 유량 조정 수단에 의해 제 1 유량으로 제어하여 상기 제 1 방향으로 공급하는 제 1 공정과, 상기 처리 용기로부터 당해 제 1 처리 가스를 배출하는 제 2 공정과, 상기 처리 용기에 상기 제 2 처리 가스를 공급하는 제 3 공정과, 상기 처리 용기로부터 당해 제 2 처리 가스를 배출하는 제 4 공정을 반복하여 이루어지고, 첫번째의 제 1 공정과 당해 첫번째의 제 1 공정의 다음에 실시되는 두번째의 제 1 공정 사이에 처리 가스 유량 안정 공정을 마련한 것을 특징으로 하는 기판 처리 방법이 개시된다.
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