公开(公告)号：KR1020080045652A

公开(公告)日：2008-05-23

申请号：KR1020070118450

申请日：2007-11-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 아시가키시게오 ,  야마사키히데아키 ,  사코다도모유키 ,  스즈키미키오 ,  나카무라겐지 ,  레우싱크게리트제이

IPC: H01L21/205

CPC classification number: H01L21/28079 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518

Abstract: A method of integrating metal-containing films into a semiconductor device is provided to deposit and integrate a tungsten-containing film and another metal-containing film of the low pollution level into the semiconductor device. A substrate is provided into a process chamber(210). A tungsten-containing film is deposited on the substrate at a first substrate temperature by exposing the substrate in a deposition gas containing tungsten carbonyl precursor(220). The tungsten-containing film is annealed at a second substrate temperature higher than the first substrate temperature, so as to eliminate CO gas(230). A barrier layer is formed on the annealed tungsten containing film(240).

Abstract translation: 提供了将含金属膜整合到半导体器件中的方法，以将含钨薄膜和低污染等级的含金属膜沉积并整合到半导体器件中。 衬底被提供到处理室（210）中。 通过在含有羰基钨前体（220）的沉积气体中暴露衬底，在第一衬底温度下在衬底上沉积含钨膜。 含钨膜在高于第一基板温度的第二基板温度下退火，以便消除CO气体（230）。 在退火的含钨膜（240）上形成阻挡层。