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公开(公告)号:KR1020170018817A
公开(公告)日:2017-02-20
申请号:KR1020167031938
申请日:2015-06-03
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H05H1/46 , H01L21/28 , H01L21/3213 , H01L21/02
CPC classification number: H01L21/3065 , H01J37/32082 , H01J2237/334 , H01L21/308 , H01L21/3081 , H01L21/3083 , H01L21/31116 , H01L21/31144 , H01L21/02115 , H01L21/02274 , H01L21/02315 , H01L21/28 , H01L21/32136 , H05H1/46
Abstract: 불화탄소를포함하는가스를공급하고, 상기가스로부터플라즈마를생성하고, 기판상의실리콘함유막을, 상기실리콘함유막상의마스크를거쳐서플라즈마에의해에칭하는에칭장치와, 상기에칭장치와는상이한장치로서, 탄소를포함하는가스를공급하고, 상기에칭된실리콘함유막에카본함유막을성막하는성막장치를갖고, 상기에칭장치는, 상기실리콘함유막을도중까지플라즈마에의해에칭하는제 1 에칭공정과, 상기카본함유막이형성된상기실리콘함유막을플라즈마에의해더 에칭하는제 2 에칭공정을포함하는공정을실행하고, 상기성막장치는, 상기제 1 에칭공정후의실리콘함유막상에플라즈마를생성하지않고카본함유막을성막하는성막공정을실행하는기판처리시스템이제공된다.
Abstract translation: 提供了一种基板处理系统,其包括:蚀刻装置,其供给含有氟化碳的气体,从气体产生等离子体,并且通过使用掩模在等离子体上在含硅的物质上蚀刻基板上的含硅膜 电影; 以及与蚀刻装置不同的成膜装置,并且在蚀刻的含硅膜上提供含有碳的气体并形成含碳膜。 蚀刻装置执行包括用于通过等离子体中途蚀刻含硅膜的第一蚀刻步骤和通过等离子体进一步蚀刻其上形成含碳膜的含硅膜的第二蚀刻步骤的步骤 。 成膜装置进行成膜步骤,其中在第一蚀刻步骤之后,在含硅膜上形成含碳膜而不产生等离子体。
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公开(公告)号:KR101614408B1
公开(公告)日:2016-04-21
申请号:KR1020120109844
申请日:2012-10-04
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/31 , H01L21/205
CPC classification number: C23C16/4404 , C23C16/4405 , H01L21/02115 , H01L21/02271
Abstract: (과제) 처리용기내의처리공간에접하는부재의표면에대한카본막의밀착성을향상시켜파티클의발생을억제할수 있는성막장치의운용방법을제공한다. (해결수단) 처리용기(2) 내에서보유지지(保持) 수단(22)에보유지지된피(被)처리체(W)의표면에카본막을성막하는성막공정을행함과함께불필요한카본막을제거하기위해클리닝가스로클리닝공정을행하도록한 성막장치의운용방법에있어서, 성막공정에앞서, 처리용기내의처리공간에접하는부재의표면에카본막(74)의밀착성을향상시키고그리고클리닝가스에대하여내성을갖는내성프리코팅막(70)을형성한다. 이에따라, 카본막의밀착성을향상시키고, 게다가불필요한카본막을제거하는클리닝처리를행해도내성프리코팅막을잔존시킨다.
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公开(公告)号:KR101626799B1
公开(公告)日:2016-06-02
申请号:KR1020120109842
申请日:2012-10-04
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/31 , H01L21/205
CPC classification number: C23C16/4405 , C23C16/4404
Abstract: (과제) 처리용기내의처리공간에접하는석영제의부재의표면에대한카본막의밀착성을향상시켜파티클의발생을억제할수 있는성막장치의운용방법을제공한다. (해결수단) 석영제의처리용기(8) 내에서보유지지(保持) 수단(22)에보유지지된복수의피처리체(W)의표면에카본막을성막하는성막공정을행하도록한 성막장치의운용방법에있어서, 처리용기내의처리공간에접하는석영제의부재의표면에카본막의밀착성을향상시키는밀착막(70)을형성하는밀착막형성공정을행하도록한다. 이에따라, 처리용기내의처리공간에접하는석영제의부재의표면에대한카본막의밀착성을향상시켜파티클의발생을억제한다.
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公开(公告)号:KR1020130046352A
公开(公告)日:2013-05-07
申请号:KR1020120109844
申请日:2012-10-04
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/31 , H01L21/205
CPC classification number: C23C16/4404 , C23C16/4405 , H01L21/02115 , H01L21/02271
Abstract: PURPOSE: A film forming apparatus and a method for operating the same are provided to perform a carbon film forming process on a plurality of object surfaces and to maintain a tolerance pre-coating film. CONSTITUTION: A carbon film(74) is formed on a plurality of object surfaces. An unnecessary carbon film in a process chamber is removed. A cleaning process is performed using cleaning gas. A supporting device holds and supports the object. A tolerance pre-coating film(70) having tolerance against the cleaning gas is formed. [Reference numerals] (70) Tolerance pre-coating film(Silicon film); (72) Pre-coating film; (74) Carbon film; (AA) Atmosphere side; (BB) Processing container inside
Abstract translation: 目的:提供一种成膜装置及其操作方法,用于对多个物体表面进行碳膜形成处理,并维持公差预涂膜。 构成:在多个物体表面上形成碳膜(74)。 去除处理室中不必要的碳膜。 使用清洁气体进行清洁处理。 支撑装置保持和支撑物体。 形成对清洁气体具有耐受性的公差预涂膜(70)。 (附图标记)(70)耐磨预涂膜(硅膜); (72)预涂膜; (74)碳膜; (AA)气氛侧; (BB)处理容器内
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公开(公告)号:KR1020130046351A
公开(公告)日:2013-05-07
申请号:KR1020120109842
申请日:2012-10-04
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/31 , H01L21/205
CPC classification number: C23C16/4405 , C23C16/4404
Abstract: PURPOSE: A film forming apparatus and a method for operating the same are provided to improve the adhesion of a carbon film and to prevent the generation of particles. CONSTITUTION: A carbon film(74) is formed on a plurality of object surfaces. A supporting device holds and supports the object. A film forming process is performed in a process chamber(8) of quartz. An adhesion film(70) is formed on the surface of the quartz. The adhesion film improves the adhesion of the carbon film. [Reference numerals] (70) Adhesion film(silicon film); (72) Pre-coating film; (74) Carbon film; (AA) Atmosphere side; (BB) Processing container inside
Abstract translation: 目的:提供一种成膜装置及其操作方法,以改善碳膜的粘附性并防止产生颗粒。 构成:在多个物体表面上形成碳膜(74)。 支撑装置保持和支撑物体。 在石英的处理室(8)中进行成膜工艺。 在石英的表面上形成粘合膜(70)。 粘附膜改善了碳膜的粘合性。 (附图标记)(70)粘合膜(硅膜) (72)预涂膜; (74)碳膜; (AA)气氛侧; (BB)处理容器内
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