公开(公告)号：KR102027675B1

公开(公告)日：2019-10-01

申请号：KR1020180007042

申请日：2018-01-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠이히사시 ,  사이토히데키 ,  가타기리다카요시 ,  구보타마사키 ,  도미야마가즈야

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/027

公开(公告)号：KR102013029B1

公开(公告)日：2019-08-21

申请号：KR1020170101407

申请日：2017-08-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사이토히데키 ,  마츠이히사시 ,  우가진하지메

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/3213 ,  H01L29/786

公开(公告)号：KR101747490B1

公开(公告)日：2017-06-14

申请号：KR1020140039891

申请日：2014-04-03

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도다사토시 ,  사이토히데키

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/60

Abstract: 본발명의목적은처리가스를대유량으로사용하는프로세스에대한대응이가능한진공장치를제공한다. 플라즈마처리장치(100)에서는, 처리용기(1)에접속된배기관(53) 중, 4개의제 1 배기관(53A)에서는 APC 밸브(55A)를개도 300(30%)로설정하고, 나머지 4개의제 2 배기관(53B)에서는 APC 밸브(55B)를개도 1000(100%)로설정한다. 이로써, 곡선 C와같이, APC 밸브(55)의개도를 300로설정했을때의곡선 A와, APC 밸브(55)의개도를 1000으로설정했을때의곡선 B 사이에서, 처리용기(1) 내에서의압력제어와처리가스의유량제어를행할수 있게된다. 곡선 C는곡선 A에비교하면, 같은압력 P1에서도보다대유량의처리가스를배기할수 있다(Q1

公开(公告)号：KR1020140123905A

公开(公告)日：2014-10-23

申请号：KR1020140039891

申请日：2014-04-03

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도다사토시 ,  사이토히데키

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/60

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01L21/02315 ,  H01L21/67069 ,  H01L21/67207 ,  H01L2021/60187

Abstract: The objective of the present invention is to provide a vacuum device capable of coping with a process which uses a processing gas in a large amount. In a plasma processing apparatus (100) in which discharge pipes (53) are connected to a processing container (1), an APC valve (55A) is set to an opening degree of 300 (30%) at four first discharge pipes (53A), and an APC valve (55B) is set to an opening degree of 1000 (100%) at the remaining four second discharge pipes (53B). As in a curve C, a pressure control and a flow rate control of the processing gas in the processing container (1) can be performed between a curve A when the opening degree of the APC valve (55) is set to 300 and a curve B when the opening degree of the APC valve (55) is set to 1,000. The curve C can discharge a larger amount of the processing gas even at the same pressure (P1) as compared to the curve A (Q1

Abstract translation: 本发明的目的是提供一种能够应对大量使用处理气体的方法的真空装置。 在排出管53与处理容器1连接的等离子体处理装置100中，在四个第一排出管53A设定APC阀55A的开度为300（30％） ），并且在其余四个第二排出管（53B）处将APC阀（55B）设定为1000（100％）的开度。 如曲线C所示，当将APC阀（55）的开度设定为300时的曲线A和曲线A之间的曲线A，可以进行处理容器（1）中的处理气体的压力控制和流量控制 B，当APC阀（55）的开度设定为1000时。 与曲线A（Q1