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公开(公告)号：KR100610416B1
公开(公告)日：2006-08-09
申请号：KR1019990046706
申请日：1999-10-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45565 , C23C16/0281 , C23C16/34 , C23C16/4404 , C23C16/4405 , C23C16/4557 , C23C16/45574 , H01L21/28556 , H01L21/28568 , H01L21/32051
Abstract: 텅스텐원자를 포함하는 제1원료가스를 피처리체에 접촉시키고, 또한 질소원자를 포함하는 제2원료가스를 피처리체에 접촉시키지 않은 전공정과, 제1원료가스와 제2원료가스를 사용하여, 피처리체에 질화텅스텐막을 형성하여 반도체장치를 제조하는 성막공정을 구비한 반도체장치의 제조방법이다. 이 방법에 의하면, 성막후의 열처리시에 있어서의 막박리를 방지할 수가 있다.
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公开(公告)号：KR1020000029332A
公开(公告)日：2000-05-25
申请号：KR1019990046706
申请日：1999-10-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45565 , C23C16/0281 , C23C16/34 , C23C16/4404 , C23C16/4405 , C23C16/4557 , C23C16/45574 , H01L21/28556 , H01L21/28568 , H01L21/32051
Abstract: PURPOSE: A producing method of a semiconductor is provided to remove a sub generated object generated from WF6 and NH3 gas by washing on the spot and keeping a filming chamber unit at a proper temperature that the sub generated object is not remained. CONSTITUTION: A method for producing a semiconductor includes a process for contacting a first material gas including a tungsten atom to a processed body and not contacting a second material gas including a nitride atom to the processed body and a filming process for producing the semiconductor device by forming a nitride tungsten film in the processed body using the first and second raw material gas. Herein, the process pressure of the processed body in the process is 0.1 to 20 Torr, and the temperature of the processed body is 300 to 500°C. Thereby, the nitride tungsten film is prevented from being peeled off from a lower layer on a heat process after filming.
Abstract translation: 目的：提供半导体的制造方法，通过现场清洗和将成膜室单元保持在不产生副生成物体的适当温度下，除去由WF6和NH3气体产生的副生成物。 构成：一种制造半导体的方法包括使包含钨原子的第一材料气体与加工体接触并且不与包含氮化物原子的第二材料气体接触到加工体的方法，以及通过以下步骤制造半导体器件的成膜方法： 使用第一和第二原料气体在加工体中形成氮化钨膜。 这里，处理体的处理压力为0.1〜20托，加工体的温度为300〜500℃。 由此，能够防止氮化钨膜在成膜后的热处理中从下层剥离。
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