Abstract:
A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.
Abstract:
PURPOSE: A developing apparatus, a developing method, and memory media are provided to increase the reactivity of developing liquid and resist in a specific region of a substrate. CONSTITUTION: A developing apparatus includes a substrate loading and supporting part(11), a developing liquid supplying part, a radiation light irradiating part, and a washing liquid supplying part(71). Resist is applied on the surface of the substrate loading and supporting part. The substrate loading and supporting part horizontally loads and supports a substrate after exposure. The developing liquid supplying part supplies developing liquid to the surface of the substrate. The developing liquid supplying part develops the resist. The developing liquid on the specific region of the substrate is heated to improve the reactivity of the developing liquid to the resist by irradiating radiation light with a substrate material wavelength absorbing region. The washing liquid supplying part supplies washing liquid to the surface of the substrate to eliminate the developing liquid.
Abstract:
PURPOSE: A developing device, developing method, and storage medium are provided to uniformly develop the entire substrate, thereby reducing defects during developing. CONSTITUTION: A substrate supporting unit(11) horizontally supports a substrate(W). A rotation device(13) rotates the substrate supporting unit around a vertical axis. A diffusion assisting solution nozzle supplies a diffusion assisting solution to the substrate to assist the diffusion of a developing solution. A developing solution nozzle(30) supplies the developing solution to the substrate. The developing solution nozzle is connected to a developing solution supply source(31) or a developing solution supply system(32) through a developing solution supply pipe(30a).
Abstract:
PURPOSE: A substrate cleaning apparatus and method, and a storage media for substrate cleaning are provided to efficiently clean a substrate by transferring a supply place of washing solution and a discharge place of gas to a peripheral part of the substrate and promoting the drying of a dry region. CONSTITUTION: A carrier station(1) comprises a load unit(11) loading a carrier(10), an opening and closing unit(12), and a transmitting means(A1). The transmitting means takes out a wafer(W) from the carrier through the opening and closing unit. A processing unit(2) comprises a shelf units(U1, U2, U3) and liquid processing units(U4, U5). An interface unit(3) is composed of a first transfer room(3A) and a second transfer room(3B) installed between the processing unit and a light exposed unit(4). A temperature-humidity control unit(22) controls temperature and humidity of processing liquid.
Abstract:
PURPOSE: A developing processing method and developing a processing apparatus are provided to allow a substrate to be cleaned and dried without scattering of a cleansing solution by moving a nozzle and diffuser from the center of the substrate the outer circumference of the substrate. CONSTITUTION: A substrate holding unit(40) horizontally keeps a substrate(W). A revolving mechanism(42) rotates the substrate holding unit around a vertical axis. A supply nozzle is installed upper part of the substrate and supplies the cleansing solution on the surface of the substrate. A diffuser(53) induces the flow of current dud to substrate rotation to the liquid film. A transfer apparatus maintains the nozzle and diffuser parallel with each other at the same time and move them from the center of the substrate to the outer circumference of the substrate.
Abstract:
본 발명은, 세정·건조 시간의 단축을 도모할 수 있는 동시에, 줄무늬와 같은 건조 결함 제거를 도모할 수 있도록 한 현상 처리 방법 및 현상 처리 장치를 제공한다. 이를 해결하기 위해, 노광된 반도체 웨이퍼(W)의 표면으로 현상액을 공급하여 현상을 행한 후에, 웨이퍼의 표면에 순수를 공급하여 세정을 행하는 현상 처리 방법에 있어서, 웨이퍼를 수평으로 유지한 스핀 척을 연직축 주위로 회전시키면서 웨이퍼의 중심부 상방에서 린스 노즐(58)로부터 순수를 공급하는 동시에, 린스 노즐에 인접하는 디퓨저(53)에 의해 웨이퍼의 회전에 의해 발생하는 기류(A)를 순수의 액막(F)으로 유도 확산시키고, 린스 노즐과 디퓨저를 평행 상태로 하여 웨이퍼의 중심부로부터 웨이퍼의 외주연을 향하여 직경 방향으로 동시에 이동시켜 웨이퍼의 세정 및 건조를 행한다. 반도체 웨이퍼, 현상액, 기류, 노즐, 건조
Abstract:
PURPOSE: A substrate processing apparatus, a substrate processing method, a coating and developing apparatus, a coating and developing method, and a storage media are provided to prevent the generation development defects by uniformly supplying a developing solution on a substrate. CONSTITUTION: A substrate(W) is undergone through an exposure process. A heating plate(31) heats the exposed substrate. A surface processing solution atomization unit(60) atomizes a surface processing solution in order to improve the wettability of the substrate. A cooling unit(15) cools the heat substrate. The surface processing solution supplying unit supplies the atomized surface processing solution to the substrate.