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公开(公告)号：KR1020070073947A
公开(公告)日：2007-07-10
申请号：KR1020077012057
申请日：2005-11-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/285 , H01L21/203 , H01L21/205
CPC classification number: C23C14/165 , C23C10/02 , C23C10/06 , C23C14/0057 , C23C14/14 , C23C14/345 , C23C26/00 , H01J37/34 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76856 , H01L21/76873
Abstract: Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed. There is provided a method of forming a film, comprising the step of carrying a substrate in a reaction chamber and mounting the same, the step of feeding a raw gas containing a compound of first metal into the reaction chamber to thereby cause the surface of the substrate to adsorb the compound of first metal, the step of bringing the compound of first metal into contact with a reducing plasma resulting from activation of a reducing gas to thereby obtain a first metal layer and the step of bringing a target electrode whose at least surface portion consists of a second metal different from the first metal into contact with a sputtering plasma and incorporating the thus ejected second metal into the first metal layer to thereby obtain an alloy layer, wherein this sequence of adsorption, reduction and alloy formation steps is carried out one or more times. By virtue of this method, even when the cohesive force of the first metal is large, any migration thereof on the substrate is suppressed to thereby realize formation of a continuous thin film of small thickness.
Abstract translation: 即使在将高粘结性金属施加到具有高纵横比的凹槽的处理对象的表面上，也可以形成连续的薄膜。 提供一种形成膜的方法，包括在反应室中载置基板并安装其的步骤，将含有第一金属化合物的原料气体进料到反应室中从而使得 用于吸附第一金属化合物的底物，使第一金属的化合物与还原气体的活化还原的等离子体接触从而获得第一金属层的步骤，以及使至少具有表面 部分由不同于第一金属的第二金属组成，与溅射等离子体接触并将如此喷射的第二金属合并到第一金属层中，从而获得合金层，其中执行吸附，还原和合金形成步骤的这一顺序 一次或多次 通过该方法，即使在第一金属的内聚力大的情况下，也能够抑制基板上的迁移，从而形成厚度薄的连续薄膜。
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公开(公告)号：KR1020060114378A
公开(公告)日：2006-11-06
申请号：KR1020067017675
申请日：2005-02-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/28562 , C23C16/18 , C23C16/452 , C23C16/45529 , C23C16/45553
Abstract: Disclosed is a method for forming a copper film wherein a gas obtained by gasifying a copper carboxylate complex having high vapor pressure and good wetting property to a base or a derivative thereof is used as a raw material gas, and H2 is used as a reducing gas. In this method, a Cu film is formed on a substrate through an ALD (Atomic Layer Deposition) process wherein a step for having the substrate adsorb the raw material gas and another step for forming a Cu film by reducing the adsorbed raw material gas with the reducing gas are repeated. With this method, there can be formed a conformal Cu thin film having good film properties.
Abstract translation: 公开了一种形成铜膜的方法，其中使用通过气化具有高蒸气压和对基体或其衍生物具有良好润湿性的羧酸铜络合物获得的气体作为原料气体，并且使用H 2作为还原气体 。 在这种方法中，通过ALD（原子层沉积）方法在基板上形成Cu膜，其中使基板吸附原料气体的步骤和通过减少吸附的原料气体形成Cu膜的步骤 重复减少气体。 通过这种方法，可以形成具有良好膜特性的共形Cu薄膜。
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公开(公告)号：KR1020060016814A
公开(公告)日：2006-02-22
申请号：KR1020057024111
申请日：2004-04-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
CPC classification number: C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
Abstract: A process for depositing a film on a substrate being processed placed in a processing container, comprising a first film deposition step repeating a first step for supplying a first material gas of organic metal compound containing no halogen element into the processing container and then removing the first material gas from the inside of the processing container and a second step for supplying a second material gas containing hydrogen or a hydrogen compound into the processing container and then removing the second material gas from the inside of the processing container, and a second film deposition step repeating a third step for supplying a third material gas of metal halide into the processing container and then removing the third material gas from the substrate being processed and a fourth step for supplying a fourth material gas containing hydrogen or a hydrogen compound into the processing container and then removing the fourth material gas from the inside of the processing container.
Abstract translation: 一种用于在被处理的基板上沉积薄膜的方法，放置在处理容器中，包括第一薄膜沉积步骤，重复第一步骤，用于将不含卤素元素的有机金属化合物的第一原料气体供应到处理容器中， 从处理容器的内部的原料气体和向处理容器供给含有氢或氢化合物的第二原料气体，然后从处理容器的内部除去第二原料气体的第二工序，以及第二成膜工序 重复第三步骤，将金属卤化物的第三原料气体供应到处理容器中，然后从被处理的基板中除去第三原料气体;第四步骤，将含有氢或氢化合物的第四材料气体供应到处理容器中， 然后从处理配件的内部去除第四原料气体 TAINER。
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公开(公告)号：KR100922905B1
公开(公告)日：2009-10-22
申请号：KR1020087027067
申请日：2005-10-03
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/28 , H01L21/205
CPC classification number: H01L21/76877 , C23C16/0272 , H01L21/28556 , H01L21/28562 , H01L21/76846
Abstract: 본 발명은 반도체 장치의 Cu 확산방지막과 Cu 배선과의 밀착력을 양호하게 하고, 반도체 장치의 신뢰성을 양호하게 하는 것을 목적으로 하고 있다.
그 때문에, 본 발명에서는 피처리기판 상에 Cu 막을 성막하는 성막 방법으로서, 상기 피처리기판 상에 형성된 Cu 확산방지막 상에 밀착막을 형성하는 제 1 공정과, 상기 밀착막 상에 Cu 막을 성막하는 제 2 공정을 갖고, 상기 밀착막은 Pd를 포함하는 것을 특징으로 하는 성막 방법을 이용한다.-
公开(公告)号：KR100889401B1
公开(公告)日：2009-03-20
申请号：KR1020077009588
申请日：2005-10-03
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/28 , H01L21/205
CPC classification number: H01L21/76877 , C23C16/0272 , H01L21/28556 , H01L21/28562 , H01L21/76846
Abstract: 본 발명은 반도체 장치의 Cu 확산방지막과 Cu 배선과의 밀착력을 양호하게 하고, 반도체 장치의 신뢰성을 양호하게 하는 것을 목적으로 하고 있다.
그 때문에, 본 발명에서는 피처리기판 상에 Cu 막을 성막하는 성막 방법으로서, 상기 피처리기판 상에 형성된 Cu 확산방지막 상에 밀착막을 형성하는 제 1 공정과, 상기 밀착막 상에 Cu 막을 성막하는 제 2 공정을 갖고, 상기 밀착막은 Pd를 포함하는 것을 특징으로 하는 성막 방법을 이용한다.Abstract translation: 本发明的一个目的是提高半导体器件的Cu扩散阻止膜和Cu布线之间的附着力并提高半导体器件的可靠性。
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Patent Agency Ranking
公开(公告)号：KR100771725B1
公开(公告)日：2007-10-30
申请号：KR1020067017675
申请日：2005-02-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/28562 , C23C16/18 , C23C16/452 , C23C16/45529 , C23C16/45553
Abstract: 증기압이 높고 하지에 대한 젖음성이 양호한 Cu 카복실산 착체 또는 그의 유도체를 가스화한 것을 원료 가스로서 이용하고, 또한 원료 가스로서 H
2 를 이용하여, 기판에 원료 가스를 흡착시키는 공정과, 흡착된 원료 가스를 환원 가스에 의해 환원시켜 Cu막을 형성하는 공정을 반복하는 ALD(원자층 성장: Atomic Layer Deposition) 프로세스에 의해 기판 상에 Cu막의 성막을 행한다. 이에 의해, 컨포멀하며 양호한 막질의 Cu 박막을 형성할 수 있다.-
公开(公告)号：KR1020100017521A
公开(公告)日：2010-02-16
申请号：KR1020097025010
申请日：2006-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/28
CPC classification number: H01L21/76846 , C23C16/0209 , C23C16/0281 , C23C16/18 , H01L21/28556 , H01L21/76838 , H01L21/76864
Abstract: There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of undercoat material of the substrate. The substrate treatment method includes: a preparation step for preparing a substrate on which a Cu film is to be formed; and a treatment step for performing a predetermined treatment on the substrate so that the crystal on the surface of the undercoat of the substrate exhibits such an orientation that the grating mismatch between the crystal and the Cu film is small.
Abstract translation: 提供在基板的底涂层材料的表面上形成Cu膜之前在基板上进行的基板处理方法。 基板处理方法包括：准备要在其上形成Cu膜的基板的制备步骤; 以及对衬底进行预定处理以使得衬底的底涂层表面上的晶体呈现出晶体与Cu膜之间的光栅失配小的取向的处理步骤。
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公开(公告)号：KR1020070058667A
公开(公告)日：2007-06-08
申请号：KR1020077009588
申请日：2005-10-03
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/28 , H01L21/205
CPC classification number: H01L21/76877 , C23C16/0272 , H01L21/28556 , H01L21/28562 , H01L21/76846
Abstract: Bonding between a Cu diffusion preventing film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming a bonding film on the Cu diffusion preventing film formed on the substrate to be processed, and a second process of forming a Cu film on the bonding film. The bonding film includes Pd.
Abstract translation: 半导体装置中的Cu扩散防止膜与Cu配线之间的接合得到改善，提高了半导体器件的可靠性。 在被处理基板上形成Cu膜的成膜方法具有在形成在被处理基板上的Cu扩散防止膜上形成接合膜的第一工序，以及将Cu膜形成在第二工序上 接合膜。 接合膜包括Pd。
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公开(公告)号：KR1020060123607A
公开(公告)日：2006-12-01
申请号：KR1020067017740
申请日：2005-02-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/455 , H01L21/02 , H01L21/28 , H01L21/285
CPC classification number: H01L21/76841 , C23C16/45542 , C23C16/515 , H01L21/28562
Abstract: A film forming method is provided for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas. At least a part of the film forming material is dissociated or decomposed in vapor phase by plasma and supplied onto the substrate.
Abstract translation: 提供了一种成膜方法，用于通过交替地向衬底提供包括金属和还原气体的成膜材料来在衬底上形成包括金属的薄膜。 至少一部分成膜材料通过等离子体在气相中解离或分解并供给到基底上。
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公开(公告)号：KR1020050108395A
公开(公告)日：2005-11-16
申请号：KR1020057017183
申请日：2004-03-15
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/02
CPC classification number: C23C16/45542 , C23C16/34 , C23C16/452 , C23C16/45561 , Y10T137/86558 , Y10T137/86566 , Y10T137/86638 , Y10T137/86726 , Y10T137/86743 , Y10T137/86751 , Y10T137/86871
Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).
Abstract translation: 公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。 励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。 在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。 切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。
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